CN-122013318-A - Preparation method and device of monocrystalline silicon rod and silicon wafer

CN122013318ACN 122013318 ACN122013318 ACN 122013318ACN-122013318-A

Abstract

The application relates to a preparation method and device of a monocrystalline silicon rod and a silicon wafer. The method comprises the steps of monitoring the diameter change trend of the crystal bar and the temperature change trend of the melt, identifying a regulating and controlling starting time point, and regulating at least one of the heating power of the melt and the lifting speed of the crystal bar when the diameter change trend and/or the temperature change trend meet preset regulating conditions and meet the regulating and controlling starting time point. By monitoring the diameter and temperature trend in real time and identifying the regulation points, the power or the pulling speed is adjusted at the initial stage of deviation of the process parameters, so that the post-processing of the broken wire is converted into active prevention based on data driving, the process stability is improved, the risk of broken wire is reduced, and the production efficiency and the consistency of crystal quality are improved.

Inventors

OU ZIYANG
WANG MING
MA JIANQIANG
ZHANG XU

Assignees

青海晶科能源有限公司
晶科能源股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260409

Claims (10)

1. A preparation method of a monocrystalline silicon rod is characterized by comprising the following steps of: monitoring the diameter change trend of the crystal bar and the temperature change trend of the melt, and identifying the starting time point of regulation; And when the diameter change trend and/or the temperature change trend meet a preset adjusting condition and meet the adjusting and starting time point, adjusting at least one of the heating power of the melt and the lifting speed of the crystal bar.
2. The method according to claim 1, wherein the step of adjusting at least one of a heating power of the melt and a lifting speed of the ingot when the diameter variation trend and/or the temperature variation trend satisfies a preset adjustment condition and satisfies the adjustment start time point comprises: when the current diameter change rate of the crystal bar exceeds the diameter change rate threshold range, simultaneously adjusting the heating power of the melt and the lifting speed of the crystal bar; and when the current temperature change rate of the melt exceeds the temperature fluctuation threshold range, adjusting the heating power of the melt.
3. The method according to claim 2, wherein the lower limit of the diameter change rate threshold range is a first change rate threshold and the upper limit is a second change rate threshold, and wherein the simultaneous adjustment of the heating power of the melt and the lifting speed of the ingot when the current diameter change rate of the ingot exceeds the diameter change rate threshold range comprises: if the current diameter change rate corresponding to the diameter change trend is smaller than the first change rate threshold, reducing the heating power and increasing the lifting speed of the crystal bar; and if the current diameter change rate corresponding to the diameter change trend is larger than the second change rate threshold, increasing the heating power and reducing the lifting speed of the crystal bar.
4. The method for producing a silicon single crystal rod according to claim 2, wherein the temperature fluctuation threshold range has a lower limit of a first fluctuation threshold and an upper limit of a second fluctuation threshold, and wherein the adjusting the heating power of the melt when the current temperature change rate of the melt exceeds the temperature fluctuation threshold range comprises: If the current temperature change rate corresponding to the temperature change trend is smaller than a first fluctuation threshold value, increasing heating power; And if the current temperature change rate corresponding to the temperature change trend is greater than a second fluctuation threshold value, reducing the heating power.
5. The method for producing a single crystal silicon rod according to claim 1, wherein the monitoring of the diameter variation trend of the ingot and the temperature variation trend of the melt comprises: acquiring diameter time sequence data of the crystal bar and temperature time sequence data of the melt; calculating the change rate of the diameter time sequence data in unit time to obtain the diameter change trend; and calculating the change rate of the temperature time sequence data in unit time to obtain the temperature change trend.
6. The method for producing a single crystal silicon rod according to any one of claims 1 to 5, wherein the identifying a control start time point comprises: And starting the equal-diameter growth stage, and determining the time point of the regulation and control starting time point when the temperature of the melt is first identified to be maintained within a target temperature range for a first preset time period and the diameter of the crystal bar is maintained within a target diameter range for a second preset time period.
7. The method for producing a single crystal silicon rod according to any one of claims 1 to 5, further comprising continuously heating a melt to melt at a first power in a melt stage to obtain the melt; The heating power comprises main heating power and bottom heating power, the main heating power of the first power is 115kW-125kW, and the bottom heating power of the first power is 95kW-105kW.
8. The method of producing a single crystal silicon rod according to claim 6, wherein after the melt phase is ended, the heating power is reduced from the first power to the second power, and the equal diameter growth phase is entered; the main heating power of the second power is 75kW-85kW, and the bottom heating power of the second power is 65kW-75kW.
9. A single crystal silicon rod preparation apparatus, characterized in that the apparatus comprises: the monitoring module is used for monitoring the diameter change trend of the crystal bar and the temperature change trend of the melt in the equal-diameter growth stage, and identifying the starting time point of regulation and control; The adjusting module is used for adjusting at least one of the heating power of the melt and the lifting speed of the crystal bar when the diameter change trend and/or the temperature change trend meet the preset adjusting conditions and the adjusting starting time point is met.
10. A silicon wafer, characterized in that the silicon wafer is produced by the method for producing a single crystal silicon rod according to any one of claims 1 to 8 and is formed after division.

Description

Preparation method and device of monocrystalline silicon rod and silicon wafer Technical Field The application relates to the technical field of monocrystalline silicon, in particular to a preparation method and device of a monocrystalline silicon rod and a silicon wafer. Background Monocrystalline silicon is widely used as a semiconductor material in the fields of integrated circuits, solar cells, sensors, photoelectric devices and the like. Currently, the growth method of single crystal silicon is mainly Czochralski method (Czochralski Process, CZ), and the basic procedures of the method comprise raw material melting, seed crystal fusion, single crystal pulling, ending and breaking, and the like. In the prior art, the single crystal furnace needs to stop the drawing process immediately after the single crystal silicon is broken, operators need to interrupt the current production flow to perform wire breaking treatment, and the equipment utilization rate and the production efficiency are reduced before restarting production. Therefore, it is necessary to avoid the wire breakage during the production of single crystal silicon. Disclosure of Invention In view of the above, it is desirable to provide a method and apparatus for producing a single crystal silicon rod, and a silicon wafer, which can reduce the probability of wire breakage. In a first aspect, the application provides a method for preparing a monocrystalline silicon rod, comprising the following steps of: monitoring the diameter change trend of the crystal bar and the temperature change trend of the melt, and identifying the starting time point of regulation; And when the diameter change trend and/or the temperature change trend meet a preset adjusting condition and meet the adjusting and starting time point, adjusting at least one of the heating power of the melt and the lifting speed of the crystal bar. In one embodiment, the monitoring the diameter variation trend of the ingot and the temperature variation trend of the melt comprises: acquiring diameter time sequence data of the crystal bar and temperature time sequence data of the melt; calculating the change rate of the diameter time sequence data in unit time to obtain the diameter change trend; and calculating the change rate of the temperature time sequence data in unit time to obtain the temperature change trend. In one embodiment, the adjusting the at least one of the heating power of the melt and the lifting speed of the ingot when the diameter variation trend and/or the temperature variation trend satisfy a preset adjustment condition and the adjustment start time point satisfies the adjustment start time point includes: when the current diameter change rate of the crystal bar exceeds the diameter change rate threshold range, simultaneously adjusting the heating power of the melt and the lifting speed of the crystal bar; and when the current temperature change rate of the melt exceeds the temperature fluctuation threshold range, adjusting the heating power of the melt. In one embodiment, the lower limit of the diameter change rate threshold range is a first change rate threshold, and the upper limit is a second change rate threshold, and when the current diameter change rate of the ingot exceeds the diameter change rate threshold range, the method simultaneously adjusts the heating power of the melt and the lifting speed of the ingot, and comprises the following steps: if the current diameter change rate corresponding to the diameter change trend is smaller than the first change rate threshold, reducing the heating power and increasing the lifting speed of the crystal bar; and if the current diameter change rate corresponding to the diameter change trend is larger than the second change rate threshold, increasing the heating power and reducing the lifting speed of the crystal bar. In one embodiment, the lower limit of the temperature fluctuation threshold range is a first fluctuation threshold, and the upper limit is a second fluctuation threshold, and when the current temperature change rate of the melt exceeds the temperature fluctuation threshold range, the adjusting the heating power of the melt comprises: If the current temperature change rate corresponding to the temperature change trend is smaller than a first fluctuation threshold value, increasing heating power; And if the current temperature change rate corresponding to the temperature change trend is greater than a second fluctuation threshold value, reducing the heating power. In one embodiment, the identifying a regulatory start time point includes: And starting the equal-diameter growth stage, and determining the time point of the regulation and control starting time point when the temperature of the melt is first identified to be maintained within a target temperature range for a first preset time period and the diameter of the crystal bar is maintained within a target diameter range for a second preset time period. In o