Search

CN-122013326-A - Silicon carbide seed crystal bonding floating pressure plate and bonding method

CN122013326ACN 122013326 ACN122013326 ACN 122013326ACN-122013326-A

Abstract

The utility model provides a silicon carbide seed crystal bonding floating pressure disk and bonding method, belong to seed crystal production technical field, silicon carbide seed crystal bonding floating pressure disk is including the fixed lower graphite pressure disk that sets up, be equipped with first floating graphite pressure disk directly over the lower graphite pressure disk, the upper surface of first floating graphite pressure disk is connected with the fixed section of thick bamboo of graphite through first coupling assembling, the lower surface of first floating graphite pressure disk is connected with the second floating graphite pressure disk through second coupling assembling, first coupling assembling and second coupling assembling are by the graphite joint bearing of a plurality of style of calligraphy arrangements is constituteed, graphite joint bearing is one-way swing structure, first coupling assembling is the cross with second coupling assembling and arranges. The first floating graphite pressure plate can swing back and forth, the second floating graphite pressure plate can swing left and right, real-time compensation is carried out through self-adaptive swing of the two-stage floating pressure plate, the pressure plate and the surface of the seed crystal are ensured to be closely attached all the time, and the pressure born by each area of the seed crystal in the pressurizing process is kept consistent.

Inventors

  • SONG DEPENG
  • ZHANG HONGZHI

Assignees

  • 山东力冠微电子装备有限公司

Dates

Publication Date
20260512
Application Date
20260127

Claims (10)

  1. 1. The utility model provides a silicon carbide seed crystal bonding floating pressure disk, including fixed lower graphite pressure disk (6) that set up, a serial communication port, be equipped with first floating graphite pressure disk (3) directly over lower graphite pressure disk (6), the upper surface of first floating graphite pressure disk (3) is connected with last graphite fixed cylinder (1) through first coupling assembling (2), the lower surface of first floating graphite pressure disk (3) is connected with second floating graphite pressure disk (5) through second coupling assembling (4), first coupling assembling (2) and second coupling assembling (4) are by the graphite joint bearing of a plurality of style of calligraphy arrangements, graphite joint bearing is one-way swing structure, first coupling assembling (2) are cross arrangement with second coupling assembling (4).
  2. 2. The silicon carbide seed crystal bonding floating platen according to claim 1, wherein the graphite knuckle bearing comprises an outer ring (7) and an inner ring (9), a bushing (8) is fixedly arranged in the outer ring (7), the inner ring (9) is rotatably arranged in the bushing (8), the inner ring (9) is fixedly connected with a connecting shaft (20), and the connecting shaft (20) is connected with the corresponding first floating graphite platen (3) or second floating graphite platen (5).
  3. 3. The silicon carbide seed crystal bonding floating platen according to claim 2, wherein two limiting parts (12) are fixedly arranged on the outer wall of the inner ring (9), the limiting parts (12) are arranged along the circumferential direction, and the two limiting parts (12) are oppositely arranged on two sides of the center of the inner ring (9).
  4. 4. A silicon carbide seed crystal bonding floating platen according to claim 3, wherein two limit grooves (15) are formed in the inner wall of the bushing (8) along the circumferential direction of the bushing, and the limit parts (12) are inserted into the limit grooves (15).
  5. 5. A silicon carbide seed crystal bonding floating platen according to claim 3, wherein a first groove (13) and a second groove (14) are formed in the outer wall of the inner ring (9) along the circumferential direction, the first groove (13) is located at the middle position of the outer wall of the inner ring (9), and two sides of the first groove (13) are respectively provided with a second groove (14).
  6. 6. The silicon carbide seed bonding floating platen according to claim 5, wherein the second groove (14) is adjacent to the spacing portion (12), and the second groove (14) is located on a side of the spacing portion (12) adjacent to the first groove (13).
  7. 7. The silicon carbide seed crystal bonding floating pressure plate according to claim 2 is characterized in that a first mounting seat (10) is fixedly arranged on the outer wall of the outer ring (7), a plurality of first mounting holes (11) are formed in the first mounting seat (10), connecting pieces (16) are fixedly arranged on the upper surfaces of the first floating graphite pressure plate (3) and the second floating graphite pressure plate (5), each connecting piece (16) comprises a second mounting seat (17), lugs (19) are fixedly arranged on each second mounting seat (17), a plurality of second mounting holes (18) are formed in each second mounting seat (17), and each lug (19) is fixedly connected with a connecting shaft (20).
  8. 8. A bonding method using the silicon carbide seed crystal bonding floating platen according to any one of claims 1-7, comprising: gradient cleaning and drying are carried out on the silicon carbide seed crystal (21); adding absolute ethyl alcohol into the mixture, regulating the solid-to-liquid ratio to be 1:0.8, and continuously stirring until a uniform pasty binder is formed; Uniformly coating an adhesive on the upper surface of a lower graphite platen (6), and placing a treated silicon carbide seed crystal (21) on the adhesive coating; the lower surface of the second floating graphite pressing disc (5) is contacted with the upper surface of the silicon carbide seed crystal (21), the axial pressure is slowly lifted, the pressure is maintained, in the pressurizing process, the first floating graphite pressing disc (3) swings and adjusts back and forth through the first connecting component (2), and the second floating graphite pressing disc (5) swings and adjusts left and right through the second connecting component (4); And (5) moving into a curing furnace, and heating and curing in sections.
  9. 9. The bonding method according to claim 2, wherein the silicon carbide seed crystal (21) is subjected to gradient cleaning by sequentially placing the seed crystal in acetone and ethanol solutions for ultrasonic cleaning for 15 minutes, then placing the seed crystal in hydrofluoric acid solution for soaking for 5 minutes, and finally washing the surface of the seed crystal with deionized water to be neutral.
  10. 10. The bonding method according to claim 8, wherein the stage-wise temperature-raising curing process is: the first stage, heating from room temperature to 150 ℃, wherein the heating rate is 5 ℃ per min, and preserving heat for 2 hours to remove low boiling components such as absolute ethyl alcohol and the like in the binder; Continuously heating to 300 ℃, keeping the temperature at a heating rate of 3 ℃ per minute, and keeping the temperature for 3 hours to promote the phenolic resin crosslinking reaction to form a primary bonding structure; and in the third stage, the temperature is raised to 600 ℃, the temperature raising rate is 2 ℃ per minute, and the heat preservation is carried out for 4 hours, so that the phenolic resin is carbonized to form a graphitized bonding layer, and the bonding strength and the high-temperature stability are enhanced.

Description

Silicon carbide seed crystal bonding floating pressure plate and bonding method Technical Field The invention relates to the technical field of seed crystal production, in particular to a silicon carbide seed crystal bonding floating pressure plate and a bonding method. Background The silicon carbide crystal is a compound semiconductor material composed of silicon and carbon in a stoichiometric ratio of 1:1, has the characteristics of large forbidden bandwidth, high critical breakdown field intensity and the like, is an ideal material for manufacturing high-frequency, high-power, anti-irradiation and illumination integrated devices, and is widely applied to the fields of new energy automobiles, 5G communication, aerospace and the like. At present, silicon carbide crystals are grown by a liquid phase method, a silicon source and a carbon source are mixed according to a stoichiometric ratio or a non-stoichiometric ratio, a silicon-based molten liquid phase is formed by raw materials under the conditions of high temperature and high pressure, carbon elements are dissolved in the liquid phase and reach a supersaturated state, then SiC seed crystals are used as a growth substrate, si-C atomic clusters dissolved in the liquid phase are orderly deposited on the surface of the seed crystals according to lattice orientation by controlling a temperature gradient and a cooling rate, and finally the growth of the crystals is completed. The preliminary step of the liquid phase method needs seed crystal bonding, in the pressurizing and heating process, pressurizing is realized by placing a pressing plate on the seed crystal, in the gluing and scraping processes, uneven gluing is very easy to occur, uneven surfaces of the seed crystal are caused, and uneven stress on the surface of the seed crystal is caused due to uneven or low flatness of the upper pressing plate and the lower pressing plate caused by assembly or processing, insufficient pressurizing pressure can be generated, and the growth quality of silicon carbide is reduced. Disclosure of Invention In order to solve the technical problems in the background art, the invention provides a silicon carbide seed crystal bonding floating pressure plate and a bonding method, so that the swing of a floating graphite pressure plate can be better adapted to the non-parallel condition of an upper pressure plate and a lower pressure plate caused by uneven processing or gluing, and the growth quality of silicon carbide is improved. The technical scheme of the invention is as follows: The invention provides a silicon carbide seed crystal bonding floating pressure plate, which comprises a lower graphite pressure plate fixedly arranged, wherein a first floating graphite pressure plate is arranged right above the lower graphite pressure plate, the upper surface of the first floating graphite pressure plate is connected with an upper graphite fixing cylinder through a first connecting component, the lower surface of the first floating graphite pressure plate is connected with a second floating graphite pressure plate through a second connecting component, the first connecting component and the second connecting component are composed of a plurality of graphite knuckle bearings which are arranged in a straight line shape, the graphite knuckle bearings are of a unidirectional swing structure, and the first connecting component and the second connecting component are arranged in a cross shape. The cross arrangement of the first connecting component and the second connecting component is matched with the unidirectional swing characteristic of the graphite joint bearing, so that the first floating graphite pressure plate can swing in the front-back direction, the second floating graphite pressure plate can swing in the left-right direction, and when the problems of uneven seed crystal surface, or uneven flatness and the like caused by uneven gluing of the upper pressure plate and the lower pressure plate due to assembly and processing exist, the self-adaptive swing of the two-stage floating pressure plate can compensate in real time, the pressure plate is ensured to be always tightly attached to the surface of the seed crystal, the pressure born by each area of the seed crystal in the pressurizing process is kept consistent, and a uniform and stable stress foundation is provided for the growth of subsequent silicon carbide crystals. Preferably, the graphite knuckle bearing comprises an outer ring and an inner ring, a lining is fixedly arranged in the outer ring, the inner ring is rotatably arranged in the lining, the inner ring is fixedly connected with a connecting shaft, and the inner ring is connected with a corresponding first floating graphite pressing disc or second floating graphite pressing disc through the connecting shaft. The arrangement of the bushing provides stable rotation support for the inner ring, reduces direct friction loss between the inner ring and the outer ring, an