CN-122015794-A - MEMS gyro sensor and testing method thereof

CN122015794ACN 122015794 ACN122015794 ACN 122015794ACN-122015794-A

Abstract

The invention provides an MEMS gyro sensor and a testing method thereof, and relates to the technical field of MEMS mapping. The sensor comprises a shell and an MEMS gyroscope chip arranged in the shell, wherein the MEMS gyroscope chip sequentially comprises a substrate layer, a movable structure layer and a cover layer, a heating layer is arranged below the substrate layer, a temperature measuring layer is arranged above the cover layer and used for heating the MEMS gyroscope chip during marking, the MEMS gyroscope chip during marking is arranged in an incubator, the incubator synchronously heats and constantly at a first target temperature, the temperature measuring layer is used for monitoring the temperature in a core of the MEMS gyroscope chip during marking, and the heating layer is also used for stopping heating after the temperature in the core rises to a second target temperature, wherein the second target temperature is not higher than the first target temperature. The method can improve the mapping efficiency of the full-temperature region of the MEMS gyro sensor.

Inventors

CHEN LIN
ZHANG ZHIYONG
BIAN YUMIN

Assignees

中国电子科技集团公司第十三研究所

Dates

Publication Date: 20260512
Application Date: 20260130

Claims (10)

1. The MEMS gyro sensor is characterized by comprising a shell and an MEMS gyro chip arranged in the shell, wherein the MEMS gyro chip sequentially comprises a substrate layer, a movable structure layer and a cover layer, a heating layer is arranged below the substrate layer, and a temperature measuring layer is arranged above the cover layer; The heating layer is used for heating the MEMS gyro chip during the marking, wherein the MEMS gyro chip is arranged in the incubator during the marking; the temperature measuring layer is used for monitoring the temperature in the core of the MEMS gyro chip during the marking; The heating layer is also used for stopping heating after the temperature in the core is increased to a second target temperature, wherein the second target temperature is not higher than the first target temperature.
2. The MEMS gyroscopic sensor of claim 1 in which a plurality of metallized vias are also provided in the area of the movable structure layer outside the vertical projection of the movable structure; The metallized through holes penetrate through the cover layer, the movable structure layer and the substrate layer and are electrically connected with the heating layer.
3. A method for testing a MEMS gyroscopic sensor according to any one of claims 1 to 2, said MEMS gyroscopic sensor being placed in an incubator, said method comprising: When the first target temperature is marked, controlling the temperature of the incubator to rise and constantly reach the first target temperature, and simultaneously controlling the heating layer to heat the MEMS gyro chip; When the temperature in the core monitored by the temperature measuring layer is increased to a second target temperature, the heating layer is controlled to stop heating the MEMS gyro chip, wherein the second target temperature is not higher than the first target temperature; And after the temperature in the core monitored by the temperature measuring layer is increased to the first target temperature, testing the MEMS gyro sensor to obtain mapping data at the first target temperature.
4. The method of testing a MEMS gyroscopic sensor of claim 3, in which the MEMS gyroscopic sensor further comprises a chip interface, a switch, and a conditioning circuit; The control heating layer heating MEMS gyro chip includes: Controlling a change-over switch to enable a chip interface to be connected with a heating layer and a temperature measuring layer, wherein the heating layer heats the MEMS gyro chip; after the temperature in the core monitored by the temperature measuring layer rises to the first target temperature, testing the MEMS gyro sensor comprises the following steps: when the temperature in the core monitored by the temperature measuring layer is raised to the first target temperature, the change-over switch is controlled, so that the chip interface is switched from being connected with the heating layer and the temperature measuring layer to being connected with the conditioning circuit, and the MEMS gyro sensor is tested.
5. The method of testing a MEMS gyroscopic sensor of claim 3 in which the second target temperature is less than the first target temperature.
6. The method for testing the MEMS gyroscopic sensor of claim 3, in which said testing the MEMS gyroscopic sensor after the temperature in the core monitored by the thermometry layer has risen to the first target temperature comprises: And after the temperature in the core monitored by the temperature measuring layer rises to the first target temperature and is delayed for a preset period of time, testing the MEMS gyro sensor.
7. The method for testing MEMS gyroscopic sensors of claim 3 in which a plurality of MEMS gyroscopic sensors are disposed in the oven, and the testing the MEMS gyroscopic sensors after the temperature in the core monitored by the temperature measurement layer increases to the first target temperature, the obtaining the mapping data at the first target temperature comprises: And after the temperature in the core of any MEMS gyro sensor is increased to the first target temperature, testing the MEMS gyro sensor to obtain the mapping data of the MEMS gyro sensor at the first target temperature.
8. The method for testing MEMS gyroscopic sensors of claim 3 in which a plurality of MEMS gyroscopic sensors are disposed in the oven, and the testing the MEMS gyroscopic sensors after the temperature in the core monitored by the temperature measurement layer increases to the first target temperature, the obtaining the mapping data at the first target temperature comprises: And after the temperature in the core of each MEMS gyro sensor is increased to the first target temperature, testing each MEMS gyro sensor to obtain the mapping data of each MEMS gyro sensor at the first target temperature.
9. The method of testing a MEMS gyroscopic sensor of claim 3, in which the mapping data comprises zero bias or a scale factor.
10. A method of testing a MEMS gyroscopic sensor according to claim 3 in which the incubator is a three axis turntable incubator.

Description

MEMS gyro sensor and testing method thereof Technical Field The invention relates to the technical field of MEMS (micro electro mechanical systems) mapping, in particular to an MEMS gyro sensor and a testing method thereof. Background MEMS (microelectromechanical systems) gyroscopic sensors are miniature angular velocity sensors based on microelectromechanical technology, the core function of which is to detect the rotational movement of an object. The mapping of the MEMS gyro sensor is to compare the standard input with the sensor output and determine the performance parameters so as to correct the error. The sensor can generate inherent errors due to manufacturing process errors, tiny structural deviations and environmental influences, an error compensation model can be built after mapping, and the deviations can be corrected through an algorithm when the sensor is used later. Temperature is an important environmental factor affecting MEMS gyroscope mapping results. One of the main targets of mapping is to eliminate errors due to temperature. The temperature can lead to sensor performance drift, and the mapping, especially the full temperature mapping, through targeted test and compensation, the sensor can keep accurate measurement at different temperatures. The full-temperature range mapping is to place the MEMS gyro sensor in an incubator to simulate high and low temperature scenes in actual application of the sensor and obtain performance data at different temperatures. For example, the oven is warmed to 40 ℃ and after waiting for a period of time, the test is started, after the test, the oven is warmed to the next temperature again, for example 45 ℃, and after waiting for a period of time, the test is again performed. The constant temperature waiting time depends on the efficiency of the heat conduction. After the MEMS gyro sensor is packaged, the chip interior and the incubator environment are required to be in thermal balance for a long time. Longer constant temperature waiting time results in lower efficiency of mapping of the full temperature zone at multiple temperature points. Disclosure of Invention The embodiment of the invention provides a MEMS gyro sensor and a testing method thereof, which are used for solving the problem of low mapping efficiency of a full-temperature region of the existing MEMS gyro sensor. The embodiment of the invention provides an MEMS gyro sensor, which comprises a shell and an MEMS gyro chip arranged in the shell, wherein the MEMS gyro chip sequentially comprises a substrate layer, a movable structure layer and a cover layer, a heating layer is arranged below the substrate layer, a temperature measuring layer is arranged above the cover layer and is used for heating the MEMS gyro chip during the marking, the MEMS gyro chip is arranged in an incubator during the marking, the incubator synchronously heats and constantly at a first target temperature, the temperature measuring layer is used for monitoring the temperature in a core of the MEMS gyro chip during the marking, and the heating layer is also used for stopping heating after the temperature in the core rises to a second target temperature, wherein the second target temperature is not higher than the first target temperature. In one possible implementation, a plurality of metallized through holes are further arranged in the area outside the vertical projection of the movable structure layer, and the metallized through holes penetrate through the cover layer, the movable structure layer and the substrate layer and are electrically connected with the heating layer. In a second aspect, the embodiment of the invention provides a testing method of a MEMS gyro sensor, which is applied to testing the MEMS gyro sensor in any one of possible implementation manners of the first aspect, wherein the MEMS gyro sensor is arranged in a constant temperature box, the method comprises the steps of controlling the constant temperature box to be heated and constant at a first target temperature when the first target temperature is marked, controlling a heating layer to heat a MEMS gyro chip, controlling the heating layer to stop heating the MEMS gyro chip when the temperature in a core monitored by a temperature measuring layer is raised to a second target temperature, wherein the second target temperature is not higher than the first target temperature, and testing the MEMS gyro sensor after the temperature in the core monitored by the temperature measuring layer is raised to the first target temperature, so as to obtain marking data at the first target temperature. In one possible implementation mode, the MEMS gyro sensor further comprises a chip interface, a change-over switch and a conditioning circuit, wherein the control heating layer is used for heating the MEMS gyro chip, the change-over switch is controlled to enable the chip interface to be connected with the heating layer and the temperature measuring layer, the heating l