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CN-122015975-A - Film multi-parameter measurement chip and measurement method

CN122015975ACN 122015975 ACN122015975 ACN 122015975ACN-122015975-A

Abstract

The invention discloses a film multi-parameter measurement chip and a measurement method, and belongs to the technical field of material physical property measurement. The chip frame is provided with four conductivity measuring ends surrounding the suspended film window and wire terminals connecting the temperature meters and the conductivity measuring ends, the surface of the electrode structure is covered with an insulating layer, and the insulating layer corresponds to the thermoelectric voltage high-temperature measuring end, the conductivity measuring end and the wire terminals and is provided with through holes exposing the conductive layer. By adopting the measuring chip and the measuring method provided by the invention, the single suspended film simplifies the chip manufacturing process, the multi-parameter measurement can be completed by one round of the same sample, the chip configuration adaptability is strong, the measurement is accurate and efficient, and the error caused by sample difference is reduced.

Inventors

  • WANG HANFU

Assignees

  • 国家纳米科学中心

Dates

Publication Date
20260512
Application Date
20260408

Claims (10)

  1. 1. A thin film multi-parameter measurement chip is characterized by comprising a chip frame provided with a suspended film window, wherein the suspended film window is covered with a supporting film, a first thermometer, a second thermometer, a third thermometer and a thermoelectric voltage high-temperature measurement end are arranged on the supporting film, the first thermometer is also used as a heater and is positioned on the central symmetry axis of the suspended film window, the chip frame is provided with four conductive measurement ends surrounding the suspended film window and wire terminals for connecting the thermometers and the conductive measurement ends, the surface of an electrode structure is covered with an insulating layer, and through holes for exposing the conductive layer are formed in the insulating layer corresponding to the thermoelectric voltage high-temperature measurement end, the conductive measurement end and the wire terminals.
  2. 2. A thin film multi-parameter measuring chip according to claim 1, wherein the measuring chip comprises two configurations of A type and B type, the A type measuring chip is mutually insulated with the third thermometer by a thermoelectric voltage high-temperature measuring end, a group of fifth group of wire terminals only comprising a single terminal are additionally arranged on the chip frame and are connected with the thermoelectric voltage high-temperature measuring end, and the B type measuring chip is connected with the third thermometer by a short conductive wire.
  3. 3. The multi-parameter measurement chip of claim 2, wherein the second thermometer is located at one side of the first thermometer, the third thermometer and the thermoelectric voltage high-temperature measurement end are located at the other side of the first thermometer, the third thermometer is used for detecting the temperature of the thermoelectric voltage high-temperature measurement end, and the first thermometer, the second thermometer and the third thermometer are arranged in parallel.
  4. 4. The multi-parameter measurement chip of claim 3, wherein the suspended membrane window has a square or rectangular structure, and the four conductivity measurement ends are distributed at four vertex positions of the same square.
  5. 5. The multi-parameter measurement chip of claim 4, wherein the temperature measuring section of the third thermometer is a meandering coiled structure and is semi-enclosed around the periphery of the thermoelectric voltage high-temperature measuring end, and the thermoelectric voltage high-temperature measuring end is a rectangular or square sheet electrode.
  6. 6. The multi-parameter measurement chip of claim 5, wherein the wire terminals comprise four groups of four terminals, two of the four terminals are used as current terminals, the other two are used as voltage terminals, and the four groups of wire terminals are respectively and electrically connected with the first thermometer, the second thermometer, the third thermometer and the four conductivity measurement terminals in a one-to-one correspondence manner.
  7. 7. The multi-parameter thin film measuring chip of claim 6, wherein the conductive layers of the first thermometer, the second thermometer, the third thermometer, the thermoelectric voltage high-temperature measuring end and the conductivity measuring end are made of simple substance materials or alloy materials.
  8. 8. The method for measuring a thin film multi-parameter measurement chip according to any one of claims 1 to 7, comprising the steps of: depositing a film to be measured on the surface of a measuring chip through a hollowed mask plate, so that the film to be measured covers a suspended film window and is in electrical contact with a thermoelectric voltage high-temperature measuring end and four conductivity measuring ends; Step two, introducing alternating heating current with the angular frequency omega into the first thermometer, detecting the temperature fluctuation amplitude and phase of the first thermometer and the temperature fluctuation phase of the second thermometer, and combining the pre-measured thermophysical parameters and thickness of the blank film Thickness of composite film Calculating in-plane thermal conductivity of the film to be measured Thermal diffusivity in plane And volumetric heat capacity Completing the measurement of the thermophysical parameters; Connecting a constant current source with two current terminals of a first thermometer, connecting resistance measurement equipment with the third thermometer through a third group of wire terminals, and enabling any conductivity measurement end to serve as a thermoelectric voltage low-temperature measurement end; Measuring the in-plane resistivity rho, the in-plane conductivity sigma and the Hall coefficient of the film to be measured by using four conductivity measuring ends through a van der Pauw method The measurement of the electrical parameter is completed, wherein the in-plane resistivity ρ is defined by the following formula: ; Wherein, the Is the thickness of the film, and the thickness of the film, And Resistance parameters measured under the combined condition of two different current and voltage terminals; In-plane conductivity The formula of (2) is: ; Hall coefficient The formula of (2) is: ; Wherein, the Is the average value of the Hall voltage, 、 、 、 For hall voltages at different current and magnetic field directions, For the magnetic induction perpendicular to the surface of the film, Is the magnitude of the current that is passed.
  9. 9. The method for measuring multiple parameters of thin film according to claim 8, wherein the measurement of the thermophysical parameters comprises measuring the blank measurement chip in advance in vacuum to obtain the corresponding thermophysical parameters of the blank film, depositing the thin film to be measured, repeating the measurement to obtain the corresponding thermophysical parameters of the composite film, and calculating the thermophysical parameters of the thin film to be measured according to the measurement results and the respective thicknesses of the blank film and the composite film, wherein the in-plane thermophysical conductivity of the thin film to be measured The formula of (2) is: ; Wherein, the And The thickness of the film to be measured, the blank film and the composite film are respectively, For the in-plane thermal conductivity of the composite film, In-plane thermal conductivity for a blank film; Volumetric heat capacity The formula of (2) is: ; Wherein, the Is the volumetric heat capacity of the composite membrane, The volume heat capacity of the blank film; In-plane thermal diffusivity The formula of (2) is: 。
  10. 10. The method of claim 9, wherein the third step comprises measuring in DC mode and AC mode, wherein the A-type measuring chip performs temperature measurement and thermoelectric voltage detection synchronously, and the B-type measuring chip performs temperature measurement and thermoelectric voltage detection by switching over the switch in time; In the DC measurement mode, DC heating current is introduced into the first thermometer, the A-type chip and the B-type chip both measure the resistance value R of the third thermometer, the resistance value R is converted into the temperature T S3 of the third thermometer, and the temperature T 0 of the chip frame and the thermoelectric voltage are measured An in-plane thermal potential is calculated, which is given by: ; Wherein, the Thermoelectric voltage which is the material of the conductive layer constituting the electrode; In the AC measurement mode, an AC heating current with an angular frequency omega is introduced into the first thermometer, and the A-type chip and the B-type chip are used for measuring the resistance fluctuation DeltaR 2ω with the angular frequency of 2 omega of the third thermometer and converting the resistance fluctuation into the temperature fluctuation amplitude of the third thermometer And phase of Detecting the amplitude of thermoelectric voltage fluctuation with angular frequency of 2 omega And phase of An in-plane thermal potential is calculated, which is given by: ; Wherein if it , The sign of the first term is negative if , The sign of the first term is positive.

Description

Film multi-parameter measurement chip and measurement method Technical Field The invention relates to the technical field of material physical property measurement, in particular to a thin film multi-parameter measurement chip and a measurement method. Background In the prior art, different physical parameters are required to be measured on a plurality of samples by using different measuring devices, so that the efficiency is low, errors are easily introduced due to individual differences of the samples or changes of testing environments, the multi-parameter measuring chip is a way for solving the difficulties, the existing chip is designed by adopting a double-suspended film window, the manufacturing process is complex, the cost is high, or the integrated measuring function of a plurality of key parameters is lacked, and in addition, the problems of large signal noise and poor measuring precision exist when the traditional steady-state thermoelectric potential measuring method is used for representing high-resistance or low-thermoelectric potential samples, so that the measuring reliability is reduced. Disclosure of Invention The invention aims to provide a film multi-parameter measurement chip and a measurement method, which solve the technical problems. The invention provides a film multi-parameter measurement chip and a measurement method, wherein the film multi-parameter measurement chip comprises a chip frame provided with a suspended film window, the suspended film window is covered with a support film, a first thermometer, a second thermometer, a third thermometer and a thermoelectric voltage high-temperature measurement end are arranged on the support film, the first thermometer is also used as a heater and is positioned on the central symmetry axis of the suspended film window, the chip frame is provided with four conductivity measurement ends surrounding the suspended film window and wire terminals for connecting the thermometers and the conductivity measurement ends, the surface of an electrode structure is covered with an insulating layer, and through holes for exposing the conductive layer are formed at the positions of the insulating layer corresponding to the thermoelectric voltage high-temperature measurement end, the conductivity measurement end and the wire terminals. A measuring method of a film multi-parameter measuring chip comprises the following steps: depositing a film to be measured on the surface of a measuring chip through a hollowed mask plate, so that the film to be measured covers a suspended film window and is in electrical contact with a thermoelectric voltage high-temperature measuring end and four conductivity measuring ends; Step two, introducing alternating heating current with the angular frequency omega into the first thermometer, detecting the temperature fluctuation amplitude and phase of the first thermometer and the temperature fluctuation phase of the second thermometer, and combining the pre-measured thermophysical parameters and thickness of the blank film Thickness of composite filmCalculating in-plane thermal conductivity of the film to be measuredThermal diffusivity in planeAnd volumetric heat capacityCompleting the measurement of the thermophysical parameters; Connecting a constant current source with two current terminals of a first thermometer, and connecting resistance measurement equipment with the third thermometer through a third group of wire terminals, wherein any one conductivity measurement end is used as a thermoelectric voltage low-temperature measurement end; Measuring the in-plane resistivity rho, the in-plane conductivity sigma and the Hall coefficient of the film to be measured by using four conductivity measuring ends through a van der Pauw method The measurement of the electrical parameter is completed, wherein the in-plane resistivity ρ is defined by the following formula: ; Wherein, the The thickness of the film to be measured; And Resistance parameters measured under the combined condition of two different current and voltage terminals; In-plane conductivity The formula of (2) is: ; Hall coefficient The formula of (2) is: ; Wherein, the Is the average value of the Hall voltage,、、、For hall voltages at different current and magnetic field directions,For the magnetic induction perpendicular to the surface of the film,Is the magnitude of the current that is passed. Therefore, the thin film multi-parameter measurement chip and the thin film multi-parameter measurement method have the beneficial effects that: 1. The chip adopts a single suspended membrane window structure, compared with a double suspended membrane design, the manufacturing process is simplified, the manufacturing difficulty and cost are reduced, meanwhile, various measuring structures are integrated, and a reliable platform is provided for multi-parameter integrated measurement. 2. The chip is matched with the measuring method, and the multiparameter measurement of the therm