CN-122016067-A - Temperature detection method and test structure

CN122016067ACN 122016067 ACN122016067 ACN 122016067ACN-122016067-A

Abstract

The application discloses a temperature detection method and a temperature detection structure, and belongs to the technical field of semiconductors. The method comprises the steps of providing a test structure, placing the test structure in a cavity to be measured in temperature, performing heat treatment to enable Si atoms in the SiC semiconductor layer to be separated out to a first surface of the SiC semiconductor layer, detecting surface parameters of the first surface, and determining the actual temperature of the cavity to be measured according to the surface parameters of the first surface. The application can realize accurate detection of high temperature.

Inventors

YANG YONG
LIU GAOSHENG
YU HAO
XUE YANSONG
SHI JIE
SUN JIEHUA
XU CHANGJIE
LI XIAODONG

Assignees

安徽长飞先进半导体股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260109

Claims (14)

1. A temperature detection method, comprising: providing a test structure comprising a SiC semiconductor layer; Placing the test structure in a cavity to be measured in temperature for heat treatment, so that Si atoms in the SiC semiconductor layer are separated out to the first surface of the SiC semiconductor layer; Detecting a surface parameter of the first surface; And determining the actual temperature of the temperature cavity to be measured according to the surface parameters of the first surface.
2. The temperature detection method of claim 1, wherein the test structure further comprises a substrate; The providing a test structure includes: and forming the SiC semiconductor layer on one side of the substrate, wherein the first surface is the surface of the SiC semiconductor layer, which is away from one side of the substrate.
3. The temperature detection method according to claim 2, wherein the substrate includes at least one of a SiC substrate and a diamond substrate.
4. The temperature detection method according to claim 1, wherein the test structure further comprises a carbon film; The providing a test structure includes: the carbon film is formed on the first surface of the SiC semiconductor layer, and the carbon film is removed during the heat treatment.
5. The method according to claim 4, wherein the thickness of the carbon film has a positive correlation with the temperature of the heat treatment.
6. The method according to claim 1, wherein determining the actual temperature of the temperature chamber to be measured according to the surface parameter of the first surface comprises: and determining the cavity temperature corresponding to the surface parameter of the first surface according to the corresponding relation between the preset surface parameter and the cavity temperature, and taking the cavity temperature as the actual temperature of the to-be-measured temperature cavity.
7. The temperature detection method according to claim 1, wherein the temperature of the heat treatment is set to a target temperature; the method further comprises the steps of: And determining whether the actual temperature of the temperature cavity to be detected deviates from the target temperature.
8. The temperature detection method according to claim 1, wherein the temperature of the heat treatment is 1200 ℃ or more and 2000 ℃ or less.
9. The temperature detection method according to any one of claims 1 to 8, wherein the surface parameter includes at least one of roughness and Si concentration.
10. A test structure, comprising: The SiC semiconductor layer is used for carrying out heat treatment in a temperature cavity to be detected, si atoms in the SiC semiconductor layer are precipitated on the first surface, and the actual temperature of the temperature cavity to be detected is determined by detecting surface parameters of the first surface.
11. The test structure of claim 10, wherein the test structure further comprises: and a substrate positioned on the second surface of the SiC semiconductor layer.
12. The test structure of claim 11, wherein the substrate comprises at least one of a SiC substrate and a diamond substrate.
13. The test structure of any one of claims 10-12, wherein the test structure further comprises: and a carbon film located on the first surface of the SiC semiconductor layer, the carbon film being for being removed during the heat treatment.
14. The test structure of claim 13, wherein a thickness of the carbon film is positively correlated with a temperature of the heat treatment.

Description

Temperature detection method and test structure Technical Field The application belongs to the technical field of semiconductors, and particularly relates to a temperature detection method and a test structure. Background The related art uses the injection activation rate of the silicon chip to test the resistivity to detect the cavity temperature, but is suitable for detecting medium and low temperatures, and cannot detect high temperature (such as more than or equal to 1200 ℃). The related art adopts a mode of periodically measuring temperature and calibrating thermocouple to detect high temperature, but the accuracy of detection of the modes is lower. Disclosure of Invention The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a temperature detection method and a test structure, which can realize accurate detection of high temperature. In a first aspect, the present application provides a temperature detection method, including: providing a test structure comprising a SiC semiconductor layer; Placing the test structure in a cavity to be measured in temperature for heat treatment, so that Si atoms in the SiC semiconductor layer are separated out to the first surface of the SiC semiconductor layer; Detecting a surface parameter of the first surface; And determining the actual temperature of the temperature cavity to be measured according to the surface parameters of the first surface. According to the temperature detection method, the SiC semiconductor layer is subjected to heat treatment in the temperature cavity to be detected, the mobility of Si atoms in SiC crystal lattices is increased at high temperature, the Si atoms are migrated to the surface of the SiC semiconductor layer through a surface diffusion or vacancy mechanism, surface dangling bonds or defects promote precipitation of the Si atoms, surface parameters of the surface are affected after the Si atoms are precipitated, the cavity temperature is different, the surface parameters are different, the actual temperature of the cavity to be detected is determined by detecting the surface parameters of the first surface, and accurate detection of the high temperature is realized. According to one embodiment of the application, the test structure further comprises a substrate; The providing a test structure includes: and forming the SiC semiconductor layer on one side of the substrate, wherein the first surface is the surface of the SiC semiconductor layer, which is away from one side of the substrate. According to one embodiment of the application, the substrate comprises at least one of a SiC substrate and a diamond substrate. According to one embodiment of the application, the test structure further comprises a carbon film; The providing a test structure includes: the carbon film is formed on the first surface of the SiC semiconductor layer, and the carbon film is removed during the heat treatment. According to one embodiment of the application, the thickness of the carbon film has a positive correlation with the temperature of the heat treatment. According to one embodiment of the present application, the determining the actual temperature of the temperature cavity to be measured according to the surface parameter of the first surface includes: and determining the cavity temperature corresponding to the surface parameter of the first surface according to the corresponding relation between the preset surface parameter and the cavity temperature, and taking the cavity temperature as the actual temperature of the to-be-measured temperature cavity. According to one embodiment of the present application, the temperature of the heat treatment is set to a target temperature; the method further comprises the steps of: And determining whether the actual temperature of the temperature cavity to be detected deviates from the target temperature. According to one embodiment of the application, the temperature of the heat treatment is greater than or equal to 1200 ℃ and less than or equal to 2000 ℃. According to one embodiment of the application, the surface parameter comprises at least one of roughness and Si concentration. In a second aspect, the present application provides a test structure comprising: The SiC semiconductor layer is used for carrying out heat treatment in a temperature cavity to be detected, si atoms in the SiC semiconductor layer are precipitated on the first surface, and the actual temperature of the temperature cavity to be detected is determined by detecting surface parameters of the first surface. According to one embodiment of the application, the test structure further comprises: and a substrate positioned on the second surface of the SiC semiconductor layer. According to one embodiment of the application, the substrate comprises at least one of a SiC substrate and a diamond substrate. According to one embodiment of the application, the test stru