CN-122016070-A - Wide temperature range thin film platinum resistance sensor probe and manufacturing method thereof

Abstract

The invention provides a wide-temperature-zone thin-film platinum resistance sensor probe and a manufacturing method thereof, relates to the technical field of sensors, and solves the technical problems that a chip in the technology moves and undergoes differential thermal expansion under the impact of external mechanical impact or high-low temperature working conditions, so that the joint of the chip and a temperature sensing end is easy to break and unstable. The device comprises the following operation steps of welding a metal wire on an armored core body and a lead wire on a film platinum resistor chip, smearing a high-temperature adhesive on the metal wire and the lead wire, performing high-temperature curing treatment to enable the chip and a connecting wire of a probe to form a whole, filling a high-temperature protection material into a metal cap, inserting a part of the area of the armored core body and the film platinum resistor chip into the metal cap, performing high-temperature curing treatment, and welding a butt joint area of the metal cap and the armored core body to form a wide-temperature area film platinum resistor sensor probe.

Inventors

• Xing Ruiniyu
• Xing Chaoying

Assignees

• 先锋传感技术有限公司

Dates

Publication Date

20260512

Application Date

20260204

Claims (7)

1. 1. The manufacturing method of the wide-temperature-zone thin-film platinum resistance sensor probe is characterized by comprising the following operation steps: step S1, welding a metal wire (11) on an armored core body (1) and a lead wire (21) on a film platinum resistor chip (2); Step S2, coating high-temperature adhesive on the metal wire (11) and the lead (21), and performing high-temperature curing treatment; Step S3, filling a high-temperature protection material into the metal cap (3), and then inserting a part of the area of the armored core body (1) and the thin film platinum resistor chip (2) into the metal cap (3) for high-temperature curing treatment; And S4, welding the butt joint areas of the metal cap (3) and the armored core body (1) to form the wide-temperature-area thin-film platinum resistance sensor probe.
2. 2. The method for manufacturing a wide temperature range thin film platinum resistance sensor probe according to claim 1, further comprising step S0, before step S1, of bonding and connecting a butt joint region of a base (22) on the thin film platinum resistance chip (2) and a ceramic substrate (4) by a high temperature adhesive, and performing a high temperature curing treatment on the lead (21) located on an extension region of the ceramic substrate (4).
3. 3. The method of manufacturing a wide temperature range thin film platinum resistance sensor probe according to claim 1, wherein in step S1, the wire (11) and the lead wire (21) are welded by a laser welder; in step S4, the butt joint areas of the metal cap (3) and the armored core (1) are welded by a laser welding machine.
4. 4. The method for manufacturing a wide temperature range thin film platinum resistance sensor probe according to claim 1, wherein the number of the wires (11) and the number of the leads (21) are two, and the wires (11) are connected with the leads (21) in a one-to-one correspondence.
5. 5. The method of manufacturing a wide temperature range thin film platinum resistance sensor probe according to claim 1, wherein the armoured core (1) comprises an armoured metal pipe (12) and the wire (11), the wire (11) passing through the armoured metal pipe (12), and magnesia powder is filled in the armoured metal pipe (12).
6. 6. The utility model provides a wide temperature zone film platinum resistance sensor probe, its characterized in that includes armor core (1), film platinum resistance chip (2) and metal cap (3), wire (11) on armor core (1) with lead wire (21) on film platinum resistance chip (2) one-to-one is connected and is solidified through high temperature adhesive, metal cap (3) cover is in the partial region of armor core (1) and on film platinum resistance chip (2), metal cap (3) are filled with high temperature protection material, the partial region of armor core (1) and film platinum resistance chip (2) are inserted and are fixed in metal cap (3), metal cap (3) with the butt joint region welded connection of armor core (1) both.
7. 7. The broad temperature zone thin film platinum resistance sensor probe according to claim 6, further comprising a ceramic substrate (4), said ceramic substrate (4) being adhesively connected to a base (22) on said thin film platinum resistance chip (2) by means of a high temperature adhesive, said leads (21) and said wires (11) being both located on an extended area of said ceramic substrate (4), said ceramic substrate (4) being inserted and fixed within said metal cap (3).

Description

Wide temperature range thin film platinum resistance sensor probe and manufacturing method thereof Technical Field The invention relates to the technical field of sensors, in particular to a wide-temperature-zone thin-film platinum resistance sensor probe and a manufacturing method thereof. Background The wide temperature range film platinum resistance sensor probe is a temperature sensitive element based on platinum resistance, utilizes the characteristic that the resistance value of platinum metal changes along with the temperature at high temperature to measure the temperature, is widely applied to the fields of automobile industry, chemical industry, microelectronics, metallurgy, aerospace, biopharmaceutical, air conditioning, refrigeration, food processing and the like, can be used for measuring the temperature of air, gas and liquid, and is particularly suitable for occasions needing quick response and high-precision measurement. The working principle is based on the resistance-temperature effect of platinum metal. The chip is a core element for realizing temperature sensing by the probe, and the probe is a carrier for carrying and protecting the chip and leading out signals, and the chip and the carrier are combined to complete the temperature measurement function in the environment with wide temperature area. When the temperature changes, the resistance value changes correspondingly, and the changes have good linear relation in a certain temperature range. By measuring the resistance value of the platinum resistor and then according to a specific conversion relation, a corresponding temperature value can be obtained. At present, a chip is arranged in a temperature sensing end of a probe, but the chip has the defect of structural stability in the probe of the wide temperature area film platinum resistance sensor, namely, under the action of external force impact or mechanical vibration, the chip is easy to generate micro displacement or shake, so that the stress at the joint of the chip and the temperature sensing end is concentrated, and then welding spots are cracked, lead is cracked or contact failure is caused, and especially under the condition of high-low temperature working condition impact, the interface stress is aggravated by the difference of the thermal expansion coefficient of the material, and the connection reliability and long-term service stability are further weakened. The problem directly affects the measurement repeatability, service life and safety of the probe under severe environments such as high temperature, strong vibration, thermal cycle and the like. Disclosure of Invention The invention aims to provide a wide-temperature-zone thin-film platinum resistance sensor probe and a manufacturing method thereof, which are used for solving the technical problems that a chip in the prior art can move and differential thermal expansion under the impact of external mechanical impact or high-low temperature working conditions, so that the joint of the chip and a temperature sensing end can be easily broken and unstable. The preferred technical solutions of the technical solutions provided by the present invention can produce a plurality of technical effects described below. In order to achieve the above purpose, the present invention provides the following technical solutions: The invention provides a method for manufacturing a wide-temperature-zone thin-film platinum resistance sensor probe, which comprises the following operation steps: step S1, welding a metal wire on an armored core body and a lead wire on a thin film platinum resistor chip; s2, coating a high-temperature adhesive on the metal wire and the lead wire, and performing high-temperature curing treatment; Step S3, filling a high-temperature protection material into a metal cap, inserting a part of the area of the armored core body and the thin film platinum resistor chip into the metal cap, and performing high-temperature curing treatment; And S4, welding the butt joint areas of the metal cap and the armored core body to form the wide-temperature-area thin-film platinum resistance sensor probe. Optionally, before step S1, the method further comprises a step S0 of bonding and connecting the butt joint region of the substrate on the thin film platinum resistor chip and the ceramic substrate through a high-temperature adhesive, and performing high-temperature curing treatment on the lead positioned on the extension region of the ceramic substrate. Optionally, in step S1, the metal wire and the lead are welded by a laser welding machine; in step S4, the butt joint areas of the metal cap and the armored core are welded by a laser welding machine. Optionally, the number of the metal wires and the number of the leads are two, and the metal wires are connected with the leads in a one-to-one correspondence. Optionally, the armoured core body comprises an armoured metal pipe and the metal wire, the metal wire passes through the ar