CN-122016666-A - Silicon photodiode broad spectrum strong light damage real-time detection device

CN122016666ACN 122016666 ACN122016666 ACN 122016666ACN-122016666-A

Abstract

The invention relates to a silicon photodiode broad spectrum strong light damage real-time detection device, and belongs to the field of optical detector performance detection. The device comprises a wide-spectrum strong light measurement performance detection part and a wide-spectrum strong light tolerance performance detection part, wherein the wide-spectrum strong light measurement performance detection part is mainly used for detecting the wide-spectrum strong light measurement performance of the silicon photodiode in real time, the wide-spectrum strong light tolerance performance detection part is mainly used for detecting the wide-spectrum strong light performance of the silicon photodiode Guan Nai in real time, and the two parts respectively take the respective detected silicon photodiode as a wide-spectrum strong light detector and respectively acquire the real-time output current of the respective detected silicon photodiode through a respective operational amplifier, a shunt resistor, an inverting input end resistor and a crossover resistor, thereby acquiring the real-time wide-spectrum strong light measurement performance and the wide-spectrum strong light tolerance performance condition of the silicon photodiode. The device has the characteristics of high timeliness, simplicity, intuition, convenient use and high reliability in detecting the limit performance of the silicon photodiode.

Inventors

NING WANGSHI
ZHANG HAOZE
LI JUN
CHEN SIQI
DU LONGKUN
LI DENGHUI
ZOU YUNLONG
YU QINGRUI
LI JILONG
ZHANG XINYUE

Assignees

中国人民解放军军事科学院防化研究院

Dates

Publication Date: 20260512
Application Date: 20251230

Claims (10)

1. The device is characterized by comprising a wide-spectrum strong light measurement performance detection part and a wide-spectrum strong light tolerance performance detection part which are arranged independently; The wide spectrum strong light measurement performance detection part is used for detecting the wide spectrum strong light measurement performance of a silicon photodiode under the reverse bias voltage in real time, and comprises a first silicon photodiode (11) to be detected, a first shunt resistor (12), a first inverting input end resistor (13), a first operational amplifier (14), a first crossover resistor (15), a first power supply module (16) and a first power supply source (17), wherein the positive electrode (111) of the first silicon photodiode to be detected is connected with the output negative electrode of the first power supply module (16), the negative electrode (112) of the first silicon photodiode to be detected is respectively connected with one end of the first shunt resistor (12) and one end of the first inverting input end resistor (13), the other end of the first shunt resistor (12) is grounded, the other end of the first inverting input end resistor (13) is connected to the inverting input end (141) of the first operational amplifier (14) and one end of the first crossover resistor (15), the non-inverting input end (142) of the first operational amplifier (14) is grounded, the output end (112) of the first silicon photodiode is connected with the positive electrode (15) of the first power supply module (16), the negative output electrode of the first operational amplifier (14) is connected with the negative power supply end (145) of the first operational amplifier and the positive electrode (111) of the first silicon photodiode to be tested; The wide-spectrum strong light resistance detection part is used for detecting the wide-spectrum strong light resistance of the silicon photodiode under zero bias in real time, and comprises a second silicon photodiode (21) to be detected, a second shunt resistor (22), a second inverting input end resistor (23), a second operational amplifier (24), a second crossover resistor (25), a second power supply module (26) and a second power supply source (27), wherein the positive electrode (211) of the second silicon photodiode is respectively connected with one end of the second shunt resistor (22) and one end of the second inverting input end resistor (23), the negative electrode (212) of the second silicon photodiode to be detected is grounded, the other end of the second shunt resistor (22) is grounded, the other end of the second inverting input end resistor (23) is connected to the inverting input end (241) of the second operational amplifier (24) and one end of the second crossover resistor (25), the output end (242) of the second operational amplifier (24) is grounded, the output end (243) of the second operational amplifier (24) is connected to the other end of the second crossover resistor (25), the second power supply module (26) is connected with the positive electrode (245) of the second operational amplifier (24), and the other end (245) of the second operational amplifier is connected with the negative electrode (27) of the second operational amplifier.
2. The device for detecting wide-spectrum strong light damage in real time by using the silicon photodiode according to claim 1, wherein for the wide-spectrum strong light measurement performance detection part, the output current i 1o of the first silicon photodiode (11) to be detected and the voltage u 1o of the output end (143) of the first operational amplifier satisfy the relationship of i 1o = - ( (R 11 + R 12 ) / (R 11 · R 13 ) ) · u 1o , wherein R 11 is the resistance value of the first shunt resistor (12), R 12 is the resistance value of the first inverting input end resistor (13), R 13 is the resistance value of the first crossover resistor (15), and i 1o can be obtained by measuring u 1o in real time.
3. The device for detecting wide-spectrum strong light damage in real time by using the silicon photodiode according to claim 1, wherein for the wide-spectrum strong light resistance detection part, the output current i 2o of the second silicon photodiode (21) to be detected and the voltage u 2o of the output end (243) of the second operational amplifier satisfy the relationship of i 2o = - ( (R 21 + R 22 ) / (R 21 · R 23 ) ) · u 2o , wherein R 21 is the resistance value of the second shunt resistor (22), R 22 is the resistance value of the second inverting input end resistor (23), R 23 is the resistance value of the second bridging resistor (25), and i 2o can be obtained by measuring u 2o in real time.
4. The device for detecting the wide-spectrum strong light damage of the silicon photodiode according to claim 1, wherein the operation step of the wide-spectrum strong light measurement performance detection part comprises the steps of placing the first silicon photodiode (11) to be detected in a wide-spectrum strong light radiation measurement area, connecting the output end (143) of the first operational amplifier to an external oscilloscope, powering up the detection part, performing wide-spectrum strong light irradiation on the first silicon photodiode (11), and observing the voltage u 1o of the output end (143) of the first operational amplifier in real time through the oscilloscope so as to evaluate the real-time wide-spectrum strong light measurement performance of the first silicon photodiode (11).
5. The device for detecting the wide-spectrum strong light damage of the silicon photodiode according to claim 1, wherein the working step of the wide-spectrum strong light performance tolerance detection part comprises the steps of placing the second silicon photodiode (21) to be detected in a wide-spectrum strong light radiation measurement area, connecting the output end (243) of the second operational amplifier to an external oscilloscope, powering up the detection part, carrying out wide-spectrum strong light irradiation on the second silicon photodiode (21), observing the voltage u 2o of the output end (243) of the second operational amplifier in real time through the oscilloscope, and further evaluating the real-time wide-spectrum strong light tolerance of the second silicon photodiode (21).
6. The device for detecting wide-spectrum strong light damage in real time according to claim 1, wherein the first power supply module (16) and the second power supply module (26) are both direct-current voltage conversion modules for converting an input power supply voltage into stable positive and negative working voltages required by the operational amplifier.
7. The device for detecting wide-spectrum strong light damage in real time according to claim 1, wherein the resistance R11 of the first shunt resistor (12) is in milliohm level, the resistance R12 of the first inverting input resistor (13) is in ohm level, the resistance R13 of the first crossover resistor (15) is in hundred ohm level, the resistance R21 of the second shunt resistor (22) is in milliohm level, the resistance R22 of the second inverting input resistor (23) is in ohm level, and the resistance R23 of the second crossover resistor (25) is in hundred ohm level.
8. The silicon photodiode broad spectrum hard light damage real time detection device according to claim 1, wherein the first operational amplifier (14) and the second operational amplifier (24) are operational amplifiers capable of processing large dynamic range signals.
9. The device according to claim 1, wherein the broad spectrum strong light damage real-time detection section (1) evaluates the broad spectrum strong light measurement performance of the first silicon photodiode (11) under the reverse bias state by measuring the output current thereof, and the broad spectrum strong light resistance performance detection section (2) evaluates the broad spectrum strong light resistance performance of the second silicon photodiode (21) under the zero bias state by measuring the output current thereof.
10. The device for detecting the wide-spectrum strong light damage of the silicon photodiode according to claim 1, wherein the device is used for detecting the wide-spectrum strong light measurement performance and the tolerance wide-spectrum strong light performance of the silicon photodiode in real time. .

Description

Silicon photodiode broad spectrum strong light damage real-time detection device Technical Field The invention belongs to the field of performance detection of light detectors, and particularly relates to a device for detecting wide-spectrum strong light damage of a silicon photodiode in real time, which is used for detecting the wide-spectrum strong light measurement performance and the tolerance wide-spectrum strong light performance of the silicon photodiode in real time. Background The silicon photodiode is widely applied to direct measurement scenes of wide-spectrum strong light such as high-power xenon lamps, solar radiation and the like by virtue of excellent performance. In practical applications, the wide-spectrum strong light measurement performance (i.e. the capability of detecting strong light irradiation without damage in a period of time) and the tolerance of the wide-spectrum strong light performance (i.e. the capability of bearing the thermal effect generated by strong light irradiation without damage in a period of time) are key indexes. When the silicon photodiode receives wide-spectrum strong light irradiation, the upper limit of output current can reach ampere level, and whether the silicon photodiode is in a damaged state can be effectively judged by detecting the real-time current, so that a special real-time detection device is needed to realize the function. The conventional related device has the defects that a photovoltaic diode performance test platform with the bulletin number of CN207851231U only depends on an electric stress test, does not integrate into an illumination scene, cannot evaluate the performance under actual wide-spectrum strong light, only detects basic electric performance, does not relate to photoelectric conversion capability and cannot detect damage in real time, a photoelectric detector laser damage test device and a method with the bulletin number of CN116642580A depend on surface morphology change to judge damage, cannot judge the damage of high-current core capability after photoelectric conversion and cannot detect wide-spectrum strong light related performance in real time, and a photovoltaic module photoelectric conversion performance test device with the bulletin number of CN120281275A has limited light source irradiance dynamic range, lacks a damage real-time monitoring mechanism, can only record static performance data, and cannot capture damage instant signals and measure damage states in place. In a comprehensive view, no report on a silicon photodiode broad spectrum strong light damage real-time detection device is currently seen. The device capable of detecting the working state and damage condition of the silicon photodiode in real time and on line under wide spectrum strong light is developed, and has important practical application value. Disclosure of Invention First, the technical problem to be solved The invention aims to solve the technical problems that the prior art lacks a special device capable of detecting the wide-spectrum strong light measurement performance and the tolerance wide-spectrum strong light performance of a silicon photodiode in real time, and the prior related device does not integrate into an illumination scene, cannot detect the core photoelectric conversion capability, lacks a real-time damage monitoring mechanism and the like. (II) technical scheme In order to solve the problems, the invention provides a silicon photodiode broad spectrum strong light damage real-time detection device, which has the core thought that two independent detection parts are used for respectively detecting the broad spectrum strong light measurement performance and the tolerance broad spectrum strong light performance of a silicon photodiode in real time, each detection part takes the detected silicon photodiode as a broad spectrum strong light detector, and the components such as an operational amplifier, a shunt resistor, an inverting input end resistor, a bridging resistor and the like are combined, so that the real-time output current of the detected device is obtained through circuit design and formula deduction, and the performance state of the detected device is judged. The specific technical scheme is as follows: The silicon photodiode wide-spectrum strong light damage real-time detection device comprises a wide-spectrum strong light measurement performance detection part 1 and a wide-spectrum strong light tolerance performance detection part 2, wherein the wide-spectrum strong light measurement performance detection part 1 and the wide-spectrum strong light tolerance performance detection part 2 are independent parts. The wide spectrum strong light measurement performance detection part 1 is mainly used for real-time detection of the wide spectrum strong light measurement performance of a silicon photodiode and comprises a first silicon photodiode 11 to be detected, a first shunt resistor 12, a first inverting input end resistor 1