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CN-122016843-A - Wafer particle detection device and method

CN122016843ACN 122016843 ACN122016843 ACN 122016843ACN-122016843-A

Abstract

The application relates to the field of semiconductor equipment and discloses a wafer particle detection device and method, wherein the device comprises a pre-detection light source, a first laser, a second laser, a third laser and a fourth laser, wherein the pre-detection light source is used for emitting first laser to a wafer, and the first laser is reflected on the surface of the wafer; the device comprises a wafer, a reflected light detection module, a main detection light source, an optoelectronic detection module, a pre-detection light source and a detection module, wherein the reflected light detection module is used for receiving reflected first laser and determining a target particle area on the wafer according to the reflected first laser, the main detection light source is used for emitting second laser to the wafer, the second laser scatters on the surface of the wafer, the optoelectronic detection module is used for receiving the scattered second laser and realizing particle detection according to the scattered second laser, and the time for emitting the first laser to the wafer by the pre-detection light source is earlier than the time for emitting the second laser to the wafer by the main detection light source, and the earlier time does not exceed the time for scanning a first circle of scanning route. The time of the light emission of the pre-detection light source is longer than the time of the light emission of the main detection light source by no more than the time along the first circle of scanning route, and then the light emission is carried out at the same time for scanning, so that the detection time can be greatly shortened.

Inventors

  • LIU HUI
  • DU JILONG

Assignees

  • 上海集成电路装备材料产业创新中心有限公司

Dates

Publication Date
20260512
Application Date
20241111

Claims (10)

  1. 1. A wafer particle inspection apparatus, comprising: A pre-detection light source for emitting a first laser to a wafer, the first laser being reflected at the surface of the wafer; The reflected light detection module is used for receiving the reflected first laser and determining a target particle area on the wafer according to the reflected first laser; The main detection light source is used for emitting second laser to the wafer, and the second laser is scattered on the surface of the wafer; The photoelectron detection module is used for receiving the scattered second laser and realizing particle detection according to the scattered second laser; the time of the pre-detection light source emitting the first laser to the wafer is earlier than the time of the main detection light source emitting the second laser to the wafer, and the earlier time is not longer than the time of scanning a first circle of scanning route.
  2. 2. The wafer particle inspection apparatus of claim 1, wherein a wavelength of the first laser light is greater than a wavelength of the second laser light.
  3. 3. The wafer particle inspection apparatus of claim 2, wherein the first laser has a wavelength range of 300nm to 390nm and the second laser has a wavelength range of 200nm to 350nm.
  4. 4. The wafer particle inspection apparatus of claim 1, further comprising: and the first filter is positioned at the laser emission port of the main detection light source.
  5. 5. The wafer particle inspection apparatus of claim 1, further comprising: and the second filter is positioned at the laser injection port of the photoelectron detection module.
  6. 6. The wafer particle inspection apparatus of claim 1, further comprising: And the shielding device is positioned at the laser injection port of the reflected light detection module.
  7. 7. The wafer particle inspection apparatus of claim 1, further comprising: And the rotating component is used for rotating the wafer.
  8. 8. The wafer particle inspection apparatus according to any one of claims 1 to 7, wherein the reflected light detection module includes a difference frequency module for converting the reflected first laser light into a target laser light of a target wavelength, a light amplifying element for amplifying the target laser light, and a photoelectric imaging section for photoelectrically converting the received amplified target laser light and determining the target particle region, which are sequentially distributed along a laser light propagation path.
  9. 9. A wafer particle inspection method based on the wafer particle inspection apparatus of claim 1, comprising: controlling a pre-detection light source to emit first laser to a wafer, wherein the first laser is reflected on the wafer; before the first laser is scanned along a first circle of scanning route, controlling a main detection light source to emit second laser to the wafer, wherein the second laser is scattered on the wafer; The reflected light detection module receives the reflected first laser and determines a target particle area on the wafer according to the reflected first laser; And the photoelectron detection module receives the scattered second laser and realizes particle detection according to the scattered second laser until all scanning routes are scanned.
  10. 10. The wafer particle inspection method of claim 9, further comprising: The wafer is rotated by a rotating member.

Description

Wafer particle detection device and method Technical Field The application relates to the field of semiconductor equipment, in particular to a wafer particle detection device and a wafer particle detection method. Background Particles on the wafer may cause defects in the finished semiconductor device, thereby affecting the yield of the semiconductor device. At present, the detection of the particles on the wafer can be performed based on a laser scattering detection tool, and along with the continuous increase of the power intensity of laser, the size of the particles which can be detected is continuously reduced, so that the detection sensitivity is improved. The existing particle detection device comprises a pre-detection light source and a main detection light source, wherein the pre-detection light source is a scattering light source, the whole wafer is pre-scanned once by using the pre-detection light source, the scanning route is tens or even hundreds of circles, the position area of large particles on the wafer is positioned according to the result of the pre-scanning light source, then the wafer is scanned by using the high-power main detection light source, and the laser power is reduced in the large particle area on the wafer. The pre-scanning of the pre-detection light source is independently performed in advance, so that the detection time is relatively long, and the throughput of the detection machine is affected. Therefore, how to solve the above technical problems should be of great interest to those skilled in the art. Disclosure of Invention The application aims to provide a wafer particle detection device and a wafer particle detection method, so that the detection time is shortened. In order to solve the above technical problems, the present application provides a wafer particle detection apparatus, including: A pre-detection light source for emitting a first laser to a wafer, the first laser being reflected at the surface of the wafer; The reflected light detection module is used for receiving the reflected first laser and determining a target particle area on the wafer according to the reflected first laser; The main detection light source is used for emitting second laser to the wafer, and the second laser is scattered on the surface of the wafer; The photoelectron detection module is used for receiving the scattered second laser and realizing particle detection according to the scattered second laser; the time of the pre-detection light source emitting the first laser to the wafer is earlier than the time of the main detection light source emitting the second laser to the wafer, and the earlier time is not longer than the time of scanning a first circle of scanning route. Optionally, the wavelength of the first laser is greater than the wavelength of the second laser. Optionally, the wavelength range of the first laser is 300 nm-390 nm, and the wavelength range of the second laser is 200 nm-350 nm. Optionally, the method further comprises: and the first filter is positioned at the laser emission port of the main detection light source. Optionally, the method further comprises: and the second filter is positioned at the laser injection port of the photoelectron detection module. Optionally, the method further comprises: And the shielding device is positioned at the laser injection port of the reflected light detection module. Optionally, the method further comprises: And the rotating component is used for rotating the wafer. Optionally, the reflected light detection module comprises a difference frequency module, a light amplifying element and a photoelectric imaging component which are distributed on a laser propagation path in sequence, wherein the difference frequency module is used for converting the reflected first laser into target laser with target wavelength, the light amplifying element is used for amplifying the target laser, and the photoelectric imaging component is used for carrying out photoelectric conversion on the received amplified target laser and determining the target particle area. The application also provides a wafer particle detection method based on the wafer particle detection device, which comprises the following steps: controlling a pre-detection light source to emit first laser to a wafer, wherein the first laser is reflected on the wafer; before the first laser is scanned along a first circle of scanning route, controlling a main detection light source to emit second laser to the wafer, wherein the second laser is scattered on the wafer; The reflected light detection module receives the reflected first laser and determines a target particle area on the wafer according to the reflected first laser; And the photoelectron detection module receives the scattered second laser and realizes particle detection according to the scattered second laser until all scanning routes are scanned. Optionally, the method further comprises: The wafer is rotated by a rotatin