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CN-122017352-A - Power tube contact resistance measurement method, system and calibration method based on contact resistance

CN122017352ACN 122017352 ACN122017352 ACN 122017352ACN-122017352-A

Abstract

The application provides a measuring method and a measuring system for contact resistance of a power tube and a calibrating method based on contact resistance, wherein the measuring method comprises the steps of obtaining at least two groups of working parameters of the power tube in a linear region by using a measuring device with a probe, wherein the at least two groups of working parameters comprise total resistance values and drain-source currents under different grid voltages and constant drain voltages; based on the electric parameters related to the on-resistance and the relation among the electric parameters, an equation set is constructed to determine the on-resistance under the first grid and/or the on-resistance under the second grid by utilizing the total resistance value under the first grid and the drain-source current as well as the total resistance value under the second grid and the drain-source current, and the resistance value of the contact resistance is determined according to the total resistance value under the first grid and the resistance value of the on-resistance or the total resistance value under the second grid and the resistance value of the on-resistance. The application can accurately obtain the size of the contact resistance so as to calibrate various electrical parameters of the power tube in a linear region.

Inventors

  • WANG JING

Assignees

  • 芯联先锋集成电路制造(绍兴)有限公司

Dates

Publication Date
20260512
Application Date
20260324

Claims (10)

  1. 1. The power tube contact resistance measuring method is characterized by comprising the following steps of: Acquiring at least two groups of working parameters of the power tube in a linear working area by using a measuring device with a probe, wherein the at least two groups of working parameters comprise total resistance values and drain-source currents under different grid voltages and constant drain voltages, and the total resistance value is the sum of the resistance value of an on-resistance and the resistance value of the contact resistance; constructing an equation set for the on-resistance under the first gate and the on-resistance under the second gate by using the total resistance value and the drain-source current under the first gate and the total resistance value and the drain-source current under the second gate based on the electric parameters related to the on-resistance and the relation between the electric parameters so as to determine the on-resistance under the first gate and/or the on-resistance under the second gate; and determining the resistance value of the contact resistor according to the total resistance value under the first grid and the resistance value of the on-state resistor or the total resistance value under the second grid and the resistance value of the on-state resistor.
  2. 2. The power tube contact resistance measurement method according to claim 1, wherein constructing an equation set regarding the on-resistance at the first gate voltage and the on-resistance at the second gate voltage using the total resistance value at the first gate voltage and the drain-source current and the total resistance value at the second gate voltage and the drain-source current based on the electric parameter related to the on-resistance and the relation between the electric parameters comprises: Determining a resistance difference value of the on-resistance under the first gate and the on-resistance under the second gate according to the total resistance value under the first gate and the total resistance value under the second gate based on the relation among the total resistance, the on-resistance and the contact resistance; Determining the resistance ratio of the on-resistance under the first gate to the on-resistance under the second gate according to the drain-source current under the first gate and the drain-source current under the second gate based on the relation between the drain-source current and the on-resistance and the drain-source current formula of the linear working area; And constructing an equation set about the on-resistance under the first gate and the on-resistance under the second gate according to the resistance difference value and the resistance ratio.
  3. 3. The method of measuring power tube contact resistance according to claim 2, wherein a difference between the on-resistance under the first gate and the on-resistance under the second gate is obtained by calculating a difference between a total resistance value under the first gate and a total resistance value under the second gate.
  4. 4. The power tube contact resistance measurement method according to claim 2, wherein the determining the resistance ratio of the on-resistance under the first gate to the on-resistance under the second gate according to the drain-source current under the first gate and the drain-source current under the second gate based on the relation between the drain-source current and the on-resistance and the drain-source current formula of the linear operation region includes: determining a voltage ratio of a channel voltage under the first gate to a channel voltage under the second gate by utilizing a drain-source current under the first gate and a drain-source current under the second gate based on a drain-source current formula of the linear working region; And converting the voltage ratio based on the relation among the drain-source current, the on-resistance and the channel voltage to obtain the resistance ratio.
  5. 5. The method of claim 4, wherein the drain-source current formula of the linear operating region is approximated as: Ids=β(Vgs-Vt)Vds Where β is the transconductance parameter, vgs is the gate voltage, vt is the threshold voltage, and Vds is the channel voltage.
  6. 6. The power tube contact resistance measurement method of claim 1, further comprising: Selecting two sets of operating parameters from the at least two sets of operating parameters; Constructing an equation set for on-resistance based on the electrical parameters related to the on-resistance and the relation between the electrical parameters by using the two sets of operation parameters to determine the on-resistance at the gate voltage corresponding to the two sets of operation parameters; repeatedly executing the first two steps to obtain on-resistances under a plurality of different gates; And fitting the on-resistances under the plurality of different gates to obtain the relation between the gate voltage and the on-resistance so as to redetermine the on-resistance under the first gate and the on-resistance under the second gate.
  7. 7. The method of claim 1, wherein the contact resistance is used to calibrate the measured value of each electrical parameter obtained when the power tube is in a linear operating region, and the each electrical parameter that can be calibrated includes at least a drain-source current, an on-resistance, and a threshold voltage when the power tube is in the linear operating region.
  8. 8. A measurement system comprising a measurement device carrying a probe, a memory and a processor, the memory having stored thereon a computer program to be run by the processor, which when run by the processor causes the processor to perform the power tube resistance measurement method of any of claims 1-7.
  9. 9. The measurement system of claim 8, wherein the probe-carrying measurement device comprises: The first adjustable power supply is connected with the grid electrode of the power tube and used for providing a first target voltage; the second adjustable power supply is connected with the drain electrode of the power tube and used for providing a second target voltage; and the current detection module is connected with the drain electrode of the power tube and is used for detecting the drain-source current of the power tube.
  10. 10. A method of calibrating based on contact resistance, the method comprising: Obtaining the resistance value of the contact resistance by using the power tube contact resistance measurement method according to any one of claims 1 to 7; acquiring the total resistance value of the power tube in the linear working area under the target grid voltage and the target drain voltage; Determining the resistance values of the on-resistances of the target gate voltage and the target drain voltage according to the contact resistance and the total resistance value of the target gate voltage and the target drain voltage; And determining a calibrated drain-source current according to the target drain voltage and the on-resistance of the target gate voltage and the target drain voltage.

Description

Power tube contact resistance measurement method, system and calibration method based on contact resistance Technical Field The application relates to the technical field of performance detection of power devices, in particular to a power tube contact resistance measurement method and system and a calibration method based on contact resistance. Background Currently, in some power device manufacturing processes, after the power device is manufactured, the power device is subjected to WAT test to evaluate the performance of the power device. For example, the linear region current of a power device is a core parameter that measures the on-state capability, on-state resistance, and stability of the power device. Typically, the linear region current of a power device is measured using a two-wire dc test method. Because the test loop comprises the probe which is contacted with the power device, when the contact resistance of the probe is close to the on-resistance level of the power device, the contact resistance can introduce measurement errors, and the actual device performance of the power device is distorted. Disclosure of Invention In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the application is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. Aiming at the existing problems, the application provides a power tube contact resistance measuring method, which comprises the following steps: Acquiring at least two groups of working parameters of a power tube in a linear working area by using a measuring device with a probe, wherein the at least two groups of working parameters comprise total resistance values and drain-source currents under different grid voltages and constant drain voltages, and the total resistance value is the sum of the resistance value of an on-resistance and the resistance value of a contact resistance; Based on the electrical parameters related to the on-resistance and the relation among the electrical parameters, constructing an equation set of the on-resistance under the first gate and the on-resistance under the second gate by utilizing the total resistance value under the first gate and the total resistance value and the drain-source current under the second gate to determine the on-resistance under the first gate and/or the on-resistance under the second gate; and determining the resistance value of the contact resistor according to the total resistance value under the first grid and the resistance value of the on-resistance or the total resistance value under the second grid and the resistance value of the on-resistance. In one embodiment, constructing an equation set for on-resistance under a first gate and on-resistance under a second gate using a total resistance value and a drain-source current under a first gate and a total resistance value and a drain-source current under a second gate based on an electrical parameter related to on-resistance and a relationship between the electrical parameters includes: Determining a resistance difference value of the on-resistance under the first gate and the on-resistance under the second gate according to the total resistance value under the first gate and the total resistance value under the second gate based on the relation among the total resistance, the on-resistance and the contact resistance; Determining the resistance ratio of the on-resistance under the first grid to the on-resistance under the second grid according to the relation between the drain-source current and the on-resistance and the drain-source current formula of the linear working area; and constructing an equation set about the on-resistance under the first gate and the on-resistance under the second gate according to the resistance difference and the resistance ratio. In one embodiment, the difference in resistance between the on-resistance under the first gate and the on-resistance under the second gate is obtained by calculating the difference between the total resistance under the first gate and the total resistance under the second gate. In one embodiment, determining the resistance ratio of the on-resistance under the first gate to the on-resistance under the second gate based on the relationship between the drain-source current and the on-resistance and the drain-source current formula of the linear operating region, the drain-source current under the first gate and the drain-source current under the second gate includes: Determining a voltage ratio of a channel voltage under the first gate to a channel voltage under the second gate by utilizing a drain-source current under the first gate and a drain-source current under the second gate based on a drain-source current formula of the linear working region; The vol