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CN-122017942-A - Charged particle beam measuring device and method, and semiconductor device

CN122017942ACN 122017942 ACN122017942 ACN 122017942ACN-122017942-A

Abstract

The application provides a measuring device of a charged particle beam, a measuring method of the charged particle beam and semiconductor equipment, and relates to the technical field of charged particle beam application, wherein the measuring device comprises a shielding piece, a current collection array and a current measurement array, the shielding piece comprises a shielding part and a plurality of knife edges, and two adjacent knife edges are arranged at the shielding part at intervals; the current collecting array is provided with a plurality of absorption cavities, the openings of the absorption cavities are opposite to the shielding piece, the absorption cavities are used for collecting charged particle beams and generating current, the current measuring array is positioned on one side of the absorption cavities, which is away from the shielding piece, and is used for measuring the current intensity generated by the current collecting array, so that the current measuring array is used for directly measuring the intensity of the current generated by the current collecting array, the kinetic energy of the charged particle beams is prevented from being lost in the process of being converted into other energy, the signal-to-noise ratio of a measurement result is improved, the signal collecting time is reduced, and high-speed and accurate measurement is realized.

Inventors

  • HAN LUYANG
  • LI LINGJIA
  • LI PENGFEI

Assignees

  • 深圳市新迈谱电子科技有限公司

Dates

Publication Date
20260512
Application Date
20251230

Claims (20)

  1. 1. A measurement device for a charged particle beam, comprising: the shielding piece comprises a shielding part and a plurality of blades, two adjacent blades are arranged at intervals on the shielding part, the shielding part is used for shielding the charged particle beams, and each blade is used for enabling a single charged particle beam to pass through; The current collection array is provided with a first surface, the first surface and the shielding piece are oppositely arranged, a plurality of absorption cavities are arranged on the current collection array, openings of the absorption cavities are all positioned on the first surface, the opening of each absorption cavity corresponds to at least one knife edge of the plurality of knife edges, the knife edge corresponding to the opening of each absorption cavity is different from the knife edge corresponding to any one opening except the opening in the plurality of openings corresponding to the plurality of absorption cavities, and each absorption cavity is used for collecting charged particle beams passing through at least one knife edge corresponding to the absorption cavity and generating current; and the current measuring array is positioned on one side of the current collecting array, which is away from the shielding piece, and is used for measuring the intensity of the current generated by the current collecting array.
  2. 2. The measurement device of claim 1, wherein the current measurement array comprises a plurality of current measurement units electrically connected in one-to-one correspondence with the plurality of absorption chambers, each current measurement unit for measuring an analog signal current intensity generated by the absorption chamber corresponding to the current measurement unit.
  3. 3. The measurement device of claim 2, wherein the current measurement array further comprises at least one signal processing element; In the case that the at least one signal processing element is a signal processing element, the signal processing element is electrically connected with the plurality of current measuring units, and the signal processing element is used for digitally converting the currents measured by the plurality of current measuring units so as to obtain digital signal current intensity; In the case that the at least one signal processing element is a plurality of signal processing elements, each signal processing element is electrically connected with at least one current measuring unit of the plurality of current measuring units, and at least one current measuring unit electrically connected with each signal processing element is different from at least one current measuring unit electrically connected with any one signal processing element except the signal processing element of the plurality of signal processing elements, each signal processing element is used for digitally converting a current measured by the at least one current measuring unit electrically connected with the signal processing element to obtain digital signal current intensity.
  4. 4. A measuring device according to claim 3, wherein in case the at least one signal processing element is a plurality of signal processing elements, the plurality of signal processing elements are electrically connected to the plurality of current measuring units in a one-to-one correspondence, each signal processing element is configured to digitally convert a current measured by the current measuring unit electrically connected to the signal processing element to obtain a digital signal current intensity.
  5. 5. The measurement device of any one of claims 2-4, wherein at least two of the plurality of absorption chambers are arranged in a first array on the current collection array, at least two of the plurality of current measurement units are arranged in a second array on the current measurement array, at least two of the plurality of absorption chambers are arranged in a different period of the first array than at least two of the plurality of current measurement units are arranged in the second array.
  6. 6. The measuring device of claim 5, wherein at least two of the plurality of knife edges are arranged in a third array on the shielding member, the at least two of the plurality of knife edges are arranged in a third array with the same arrangement period as the at least two of the plurality of absorption chambers in the first array, and the at least two of the plurality of knife edges and the at least two of the plurality of absorption chambers are arranged in a one-to-one correspondence.
  7. 7. The measurement device of claim 5 or 6, wherein at least two of the plurality of absorption chambers have a greater arrangement period in the first array than at least two of the plurality of current measurement units have an arrangement period in the second array.
  8. 8. The measurement device of any one of claims 2-7, further comprising a wiring layer between the current collection array and the current measurement array, each current measurement cell and its corresponding absorption cavity being electrically connected by the wiring layer.
  9. 9. The measurement device of any one of claims 2-4, wherein at least two of the plurality of absorption chambers are arranged in a first array on the current collection array, at least two of the plurality of current measurement units are arranged in a second array on the current measurement array, and at least two of the plurality of absorption chambers have the same arrangement period as the first array and at least two of the plurality of current measurement units have the same arrangement period as the second array.
  10. 10. The measurement device of claim 5 or 9, wherein at least two of the plurality of knife edges are arranged in a third array on the shield, the at least two of the plurality of knife edges being arranged in a different period of the third array than the at least two of the plurality of absorption chambers being arranged in the first array.
  11. 11. The measurement device of claim 9, wherein at least two of the plurality of knife edges are arranged in a third array on the shield, wherein at least two of the plurality of knife edges are arranged in a third array, wherein at least two of the plurality of absorption chambers are arranged in the first array, and wherein at least two of the plurality of current measurement units are arranged in the second array, wherein at least two of the plurality of knife edges and at least two of the plurality of absorption chambers are arranged in a one-to-one correspondence.
  12. 12. A measuring device according to any of claims 1 to 11, wherein the shield and the current collection array are spaced apart.
  13. 13. The measuring device of any of claims 1-12, further comprising a workpiece macro-stage and a workpiece micro-stage, the workpiece micro-stage being mounted on the workpiece macro-stage, the current collection array and the current measurement array being fixedly connected to the workpiece macro-stage, the shield being fixedly connected to the workpiece micro-stage, the workpiece micro-stage being adapted to drive the shield to move relative to the workpiece macro-stage, the workpiece micro-stage being further adapted to position a workpiece to be machined.
  14. 14. The measurement device of any one of claims 1 to 13 wherein the shield is fixedly connected to the current collection array, and the current collection array is fixedly connected to the current measurement array.
  15. 15. The measurement apparatus of claim 14 further comprising a workpiece stage on which the current measurement array is mounted, the workpiece stage for placement of a workpiece to be machined.
  16. 16. A measurement device as claimed in any one of claims 1 to 15 wherein the current collection array is a faraday cup assembly and each absorption chamber is a faraday cup.
  17. 17. The measurement device according to any one of claims 1 to 16, wherein the maximum length between any two points on the edge of the opening of a single absorption chamber is greater than the width of a single charged particle beam and less than or equal to ten times the pitch of any adjacent charged particle beam.
  18. 18. The measurement device of any one of claims 1 to 17, wherein the current collection array is fabricated by a microelectromechanical system process.
  19. 19. A method of measuring a charged particle beam, characterized in that the method is applied to a measuring device according to any one of claims 1 to 18, the method comprising: The workbench drives the shielding piece, the current collection array and the current measurement array to move to the position of the charged particle beam, and a single knife edge corresponds to a single charged particle beam; Causing the single charged particle beam and the shutter to relatively move in a direction perpendicular to the direction in which the single blade extends, the single charged particle beam being moved to the single blade by a shutter portion of the shutter, the single charged particle beam being kept stable or turned off when the single charged particle beam is completely blocked by the shutter portion; and under the condition that the single charged particle beam and the shielding piece relatively move, the absorption cavity corresponding to the single knife edge and the current measuring unit corresponding to the absorption cavity collect and measure the current of the single charged particle beam collected in the scanning process.
  20. 20. The measurement method of claim 19, further comprising, after the collecting and measuring the current of the single charged particle beam collected during the scanning process: Under the condition that the extending directions of at least two knife edges are different, the single charged particle beam and the shielding piece are sequentially and relatively moved along the direction perpendicular to the extending directions of the at least two knife edges; The absorption cavities corresponding to the at least two knife edges and the current measuring units corresponding to the absorption cavities corresponding to the at least two knife edges repeatedly collect and measure the current of the single charged particle beam collected in the scanning process.

Description

Charged particle beam measuring device and method, and semiconductor device Technical Field The present application relates to the field of charged particle beam application, and in particular, to a charged particle beam measuring apparatus, a charged particle beam measuring method, and a semiconductor device. Background Charged particle beam technology is a technology that uses electromagnetic fields to accelerate and manipulate charged particles (e.g., electrons, protons, ions, etc.). These particles are accelerated to a high velocity state of motion and form a highly concentrated energy beam. This technique is widely used in the field of semiconductor manufacturing in semiconductor manufacturing equipment such as high-precision quantity inspection equipment. The performance of a charged particle beam system depends on the precise control of the characteristics of the charged particle beam, which require periodic precise measurements and calibrations during system operation. At the same time, the parallel operation of introducing multiple beams of charged particles into the system can significantly improve the yield of the system, and the multiple beam technology has become the best technical route for pursuing the yield at present. In the related art, a plurality of charged particle beams are converted into a plurality of light beams by a conversion element, the light beam intensity is detected by a photosensor such as a camera, and the charged particle beam characteristics are determined by using the detected change in the light beam intensity. Such an apparatus may enable parallel measurement of multiple beams of particles. However, when the light intensity is detected by using a photosensitive measurer, the kinetic energy of the charged particle beam needs to be converted into light first, the quantum efficiency of the conversion process is usually only about 2%, and the non-uniformity of the material of the conversion element can cause the fluctuation of the quantum efficiency of the conversion process, so that the current intensity of the charged particle beam is indirectly fed back by measuring the light intensity, and the accuracy and consistency of the current characterization are lacking. Disclosure of Invention The application provides a charged particle beam measuring device, a charged particle beam measuring method and semiconductor equipment, which are used for solving the problem that the multi-beam charged particle beam measuring device lacks accuracy and consistency in current characterization. The application provides a measuring device for a charged particle beam, which comprises a shielding piece and a plurality of knife edges, wherein the shielding piece comprises a shielding part and a plurality of knife edges, two adjacent knife edges are arranged at intervals on the shielding part, the shielding part is used for shielding the charged particle beam, each knife edge is used for enabling a single charged particle beam to pass through, a current collecting array is provided with a first surface, the first surface is opposite to the shielding piece, a plurality of absorption cavities are arranged on the current collecting array, openings of the plurality of absorption cavities are positioned on the first surface, the opening of each absorption cavity corresponds to at least one knife edge in the plurality of knife edges, the knife edge corresponding to the opening of each absorption cavity is different from the knife edge corresponding to any opening except the opening in the plurality of absorption cavities, each absorption cavity is used for collecting the charged particle beam which corresponds to the absorption cavity and generating a current, and the current measuring array is positioned on one side of the current collecting array, which is away from the shielding piece and is used for measuring the intensity of the generated current. Therefore, the current measurement array replaces an electro-optical conversion element and a photosensitive measurer, does not need to perform multiple electro-optical/photoelectric conversions on the measurement of the charged particle beams, is favorable for improving the signal to noise ratio of the measurement result, realizes high-speed and accurate measurement, and solves the problem that the multi-beam charged particle beam measurement device lacks accuracy and consistency in the representation of the current. In a possible implementation manner, the current measurement array includes a plurality of current measurement units, and the plurality of current measurement units are electrically connected with the plurality of absorption cavities in a one-to-one correspondence manner, and each current measurement unit is used for measuring the current intensity of an analog signal generated by the absorption cavity corresponding to the current measurement unit. Therefore, the current of the multi-beam charged particle beam can be measured respectivel