CN-122018049-A - Manufacturing method and control method of chiral super-surface device

CN122018049ACN 122018049 ACN122018049 ACN 122018049ACN-122018049-A

Abstract

The invention relates to the technical field of chiral super-surface devices and provides a manufacturing method and a control method of the chiral super-surface device, comprising the steps of preparing a silicon functional layer with target thickness on an optical substrate, etching the silicon functional layer to prepare a super-surface structure to obtain a first intermediate product, wherein the super-surface structure comprises a plurality of square unit cells which are periodically arranged, each unit cell is penetrated by a first C-shaped aperture and a second C-shaped aperture which are concentric, the outer radius of the first C-shaped aperture is smaller than the inner radius of the second C-shaped aperture, and the symmetry axis of the first C-shaped aperture is positioned on a plane which is perpendicular to the symmetry axis of the second C-shaped aperture; and preparing a graphene layer on the surface of the silicon functional layer of the first intermediate product, and preparing a metal electrode on the surface of the graphene layer to obtain the chiral super-surface device. The method solves the problems that the chiral super-surface quality factor adopted by the device in the related technology is low, high circular dichroism and high spectral selectivity are difficult to be compatible, and the circular dichroism symbol cannot be dynamically reversed.

Inventors

GAO LEI
XU XIAOFENG
GAO DONGLIANG
WANG CHENGLIN

Assignees

苏州城市学院
苏州大学

Dates

Publication Date: 20260512
Application Date: 20260210

Claims (10)

1. A method of fabricating a chiral subsurface device, comprising: Providing an optical substrate; preparing a silicon functional layer with a target thickness on the optical substrate; Etching the silicon functional layer to prepare a super-surface structure to obtain a first intermediate product, wherein the super-surface structure comprises a plurality of square unit cells which are arranged periodically, each unit cell is penetrated by a first C-shaped aperture and a second C-shaped aperture which are concentric, the outer radius of the first C-shaped aperture is smaller than the inner radius of the second C-shaped aperture, and the plane of the symmetry axis of the first C-shaped aperture is vertical to the plane of the symmetry axis of the second C-shaped aperture; preparing a graphene layer on the surface of the silicon functional layer of the first intermediate product to obtain a second intermediate product; and preparing a metal electrode on the surface of the graphene layer of the second intermediate product to obtain the chiral super-surface device.
2. The method of manufacturing according to claim 1, wherein etching the silicon functional layer to produce a super surface structure, before obtaining the first intermediate product, further comprises: performing finite element simulation analysis, and determining quantitative relations between the quality factor of the first intermediate product and the first opening angle of the first C-shaped aperture and the second opening angle of the second C-shaped aperture in a data fitting mode; and determining a first opening angle of the first C-shaped pore diameter and a second opening angle of the second C-shaped pore diameter based on a target quality factor and the quantitative relation, and preparing the super-surface structure.
3. The method of manufacturing according to claim 2, wherein performing a finite element simulation analysis to determine, by means of data fitting, a quantitative relationship between the quality factor of the first intermediate product and the first opening angle of the first C-shaped pore size and the second opening angle of the second C-shaped pore size comprises: Performing transmission spectrum simulation and circular dichroism spectrum simulation to obtain a spectrum simulation result; Establishing a coupling die equation, and deducing to obtain a transmission coefficient analysis solution; and carrying out data fitting on the spectrum simulation result and the transmission coefficient analysis solution, and determining the quantitative relation.
4. A method of manufacturing according to claim 3, wherein the calculation formula used for performing circular dichroism spectroscopy simulation comprises: ; In the formula, Which means that circular dichroism is indicated, Indicating the transmission coefficient for both transmitted and incident light as right circularly polarized light, Indicating the transmission coefficient of the transmitted light being left circularly polarized light and the incident light being right circularly polarized light, Indicating the transmission coefficient of the incident light being left circularly polarized light and the transmitted light being right circularly polarized light, Indicating the transmission coefficient for both transmitted and incident light as left circularly polarized light.
5. The method of manufacturing according to claim 1, wherein before preparing a silicon functional layer of a target thickness on the optical substrate, the method further comprises: Determining a target thickness of the silicon functional layer based on performance conditions; The performance conditions include at least support for Mie resonance in the near infrared band.
6. The method of claim 5, wherein prior to providing an optical substrate, the method further comprises determining a thickness and a refractive index of the optical substrate based on a target thickness of the silicon functional layer.
7. A control method of a chiral subsurface device, characterized in that the chiral subsurface device is manufactured based on the manufacturing method according to any one of claims 1 to 6, the control method comprising: Applying a control voltage to the metal electrode; And adjusting the Fermi energy level of the graphene layer based on the control voltage, and changing the dielectric constant of the graphene layer for controlling the circular dichroism symbol of the chiral super-surface device.
8. The control method according to claim 7, wherein the adjusting the fermi level of the graphene layer based on the control voltage changes the dielectric constant of the graphene layer using a formula comprising: ; ; In the formula, Represents the surface conductivity of the graphene layer, Represents the in-band factor contribution and, Representing the inter-band factor contribution, i representing the imaginary unit, e representing the electron charge, k B representing the boltzmann constant, T representing the kelvin temperature, Represents a reduced planck constant, ω represents an incident light frequency, τ represents a momentum relaxation time, E f represents a fermi level, ε g represents a relative permittivity tensor of the graphene layer, ε 0 represents a vacuum permittivity, and h 0 represents a thickness of the graphene layer.
9. The control method of claim 7, wherein the chiral subsurface device is used to construct an optical or logic gate, the control method further comprising: determining a first input state based on a magnitude of the fermi level; determining a second input state based on the magnitude of the incident light wavelength; And determining an output result of the optical exclusive-nor logic gate based on the first input state and the second input state and in combination with a preset logic output criterion.
10. The control method according to claim 9, wherein the logic output criteria include: Outputting 1 in the case that the circular dichroism amplitude of the chiral subsurface device is greater than 0.5; Outputting 0 when the circular dichroism amplitude is less than or equal to 0.5; wherein the circular dichroism amplitude is related to the fermi level size and the incident light wavelength size.

Description

Manufacturing method and control method of chiral super-surface device Technical Field The invention relates to the technical field of chiral super-surface devices, in particular to a manufacturing method and a control method of a chiral super-surface device. Background The chiral super-surface device is a photoelectric device for enhancing chiral interaction between light and substances through a super-surface formed by a micro-nano structure, can differentially regulate and control left-handed circularly polarized light and right-handed circularly polarized light, has strong response and easy integration, and is widely applied to the fields of polarization sensing, optical communication, on-chip light calculation and the like. The chiral super surface adopted by the device in the related art, such as the chiral super surface adopting a metal spiral structure, the full-medium chiral super surface based on geometric phase or simple structural damage, has low quality factor (Q value), and is difficult to combine high circular dichroism and high spectrum selectivity. Meanwhile, once the preparation of the device is finished, the direction of chiral response is locked, and the circular dichroism symbol cannot be dynamically reversed, so that the application of the device in coding, switching and complex information processing is restricted. Disclosure of Invention The manufacturing method and the control method for the chiral super-surface device at least solve the problems that the chiral super-surface quality factor adopted by the device in the related technology is low, high circular dichroism and high spectrum selectivity are difficult to be compatible, and the circular dichroism symbol cannot be reversed dynamically. The invention provides a manufacturing method of a chiral super-surface device, which comprises the steps of providing an optical substrate, preparing a silicon functional layer with target thickness on the optical substrate, etching the silicon functional layer to prepare a super-surface structure to obtain a first intermediate product, wherein the super-surface structure comprises a plurality of square unit cells which are arranged periodically, each unit cell is penetrated by a first C-shaped aperture and a second C-shaped aperture which are concentric, the outer radius of the first C-shaped aperture is smaller than the inner radius of the second C-shaped aperture, the plane of the symmetry axis of the first C-shaped aperture is perpendicular to the plane of the symmetry axis of the second C-shaped aperture, preparing a graphene layer on the surface of the silicon functional layer of the first intermediate product to obtain a second intermediate product, and preparing a metal electrode on the surface of the graphene layer of the second intermediate product to obtain the chiral super-surface device. Preferably, before etching the silicon functional layer to prepare the super-surface structure and obtaining the first intermediate product, the method further comprises the steps of performing finite element simulation analysis, determining quantitative relations between the quality factor of the first intermediate product and the first opening angle of the first C-shaped aperture and the second opening angle of the second C-shaped aperture in a data fitting mode, and determining the first opening angle of the first C-shaped aperture and the second opening angle of the second C-shaped aperture based on the target quality factor and the quantitative relations, wherein the quantitative relations are used for preparing the super-surface structure. Preferably, finite element simulation analysis is carried out, and quantitative relations between quality factors of a first intermediate product and first opening angles of a first C-shaped aperture and second opening angles of a second C-shaped aperture are determined in a data fitting mode. Preferably, the calculation formula adopted for performing circular dichroism spectrum simulation comprises: ; In the formula, Which means that circular dichroism is indicated,Indicating the transmission coefficient for both transmitted and incident light as right circularly polarized light,Indicating the transmission coefficient of the transmitted light being left circularly polarized light and the incident light being right circularly polarized light,Indicating the transmission coefficient of the incident light being left circularly polarized light and the transmitted light being right circularly polarized light,Indicating the transmission coefficient for both transmitted and incident light as left circularly polarized light. Preferably, the method further comprises determining the target thickness of the silicon functional layer based on performance conditions including at least support of Mie resonance in the near infrared band prior to preparing the silicon functional layer of the target thickness on the optical substrate. Preferably, before providing an optic