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CN-122018054-A - Antireflection film and preparation method thereof

CN122018054ACN 122018054 ACN122018054 ACN 122018054ACN-122018054-A

Abstract

The invention discloses an antireflection film and a preparation method thereof, wherein the antireflection film comprises a base material layer, a hardening layer, an optical resin coating, a bonding layer and an antireflection layer which are sequentially laminated, wherein the antireflection layer is a porous silicon oxide coating, the porosity is 38% -42%, and the refractive index is 1.281-1.300. The invention adopts a dry-wet combination method to coat and form a hardening layer and an optical resin coating on a substrate, forms a nano porous silicon oxide layer through a magnetron sputtering process and an etching method, regulates and controls the porosity of the nano porous silicon oxide layer by controlling the mass ratio of silicon in a silicon alloy target material, realizes the regulation and control of refractive index values, and simultaneously optimizes and designs a multilayer film system by matching with optical simulation so as to finally achieve the aim of ultralow refractive index. The method not only improves the efficiency, but also reduces the cost, and realizes the ultralow reflectivity while reducing the total thickness of the film.

Inventors

  • LV JINGBO
  • WANG JINMING
  • YU PEIQIANG
  • LIU SHIQIN
  • ZHANG LIN

Assignees

  • 江苏日久光电股份有限公司

Dates

Publication Date
20260512
Application Date
20251205

Claims (9)

  1. 1. The antireflection film is characterized by comprising a base material layer, a hardening layer, an optical resin coating, a bonding layer and an antireflection layer which are sequentially laminated; Wherein the anti-reflection layer is a porous silicon oxide coating, the porosity is 38% -42%, and the refractive index is 1.281-1.300.
  2. 2. An antireflection film as claimed in claim 1, wherein the thickness of the antireflection layer is 85nm to 95nm.
  3. 3. The antireflection film of claim 1 wherein the optical resin coating is an acrylic resin layer comprising nano zirconia having a thickness of 100nm to 140nm.
  4. 4. An antireflection film according to claim 1, wherein the stiffening layer is an acrylic layer having a thickness of 2 μm to 5 μm.
  5. 5. The antireflection film according to claim 1, wherein the adhesive layer is any one of a silicon plating layer, a nichrome plating layer, a titanium plating layer, and a zirconia plating layer, and has a thickness of 0.2nm to 0.5nm.
  6. 6. An antireflection film as claimed in claim 1, wherein a supporting layer is further provided between the adhesive layer and the antireflection layer, and the supporting layer is a silicon oxide coating layer having a thickness of 8nm to 15nm.
  7. 7. The antireflection film of claim 1 wherein the antireflection layer has a support layer on a side facing away from the adhesive layer, the support layer being a porous silica coating having a porosity of 29% -32%, a refractive index of 1.329-1.344 and a thickness of 8nm-15nm.
  8. 8. A method of producing an antireflection film as claimed in claim 1, comprising the steps of: Taking a substrate layer; sequentially preparing a hardening layer and an optical resin coating on the substrate layer; Preparing a bonding layer on the optical resin coating; Preparing an oxide layer on the bonding layer by using any one of a silicon-aluminum target, a silicon-copper target and a silicon-chromium target through magnetron sputtering; and etching the oxide layer by using phosphoric acid solution to form a porous silicon oxide coating layer, so as to obtain the antireflection film.
  9. 9. The method of claim 8, wherein the silicon mass ratio in the silicon-aluminum target, the silicon mass ratio in the silicon-copper target, and the silicon mass ratio in the silicon-chromium target are 42% -46%, or, The concentration of the phosphoric acid solution is 50% -85%, or, Firstly, etching an oxide layer by using a phosphoric acid solution with the concentration of 50 percent, wherein the temperature is 55-65 ℃, the etching time is 8-12 min, then adding a phosphoric acid solution with the concentration of 85 percent every 4-6 min, washing by using deionized water, and drying at 70-85 ℃ for 8-12 min to obtain the antireflection film.

Description

Antireflection film and preparation method thereof Technical Field The invention belongs to the technical field of AR antireflection films, and particularly relates to an antireflection film and a preparation method thereof. Background The antireflection film has the main functions of reducing or eliminating reflected light of optical surfaces such as lenses, prisms, plane mirrors and the like, increasing the transmission of elements and reducing or eliminating stray light of a system. The antireflection film is applied to electronic products such as mobile phone screens, can remarkably improve the display effect under outdoor strong light, and solves the problem of outdoor 'invisible' pain points. ‌ In order to achieve extremely low reflectivity over a broad spectral range (e.g. 400-700nm in the visible), a single anti-reflective layer is often difficult to meet. Thus, multilayer film stack designs are commonly employed in the industry. This design is based on thin film interference theory by carefully designing the refractive index and thickness of each layer of material so that the light waves reflected at different wavelengths cancel each other out. Currently, most of the mainstream antireflection film preparation technologies are based on the difference of refractive indexes of materials, for example, nb 2O5 with a refractive index of about 2.3 and SiO 2 with a refractive index of about 1.46 are adopted to match, so that a film coating to a thickness of about 200nm is generally required to achieve an optical antireflection effect, and the film coating has a low reflectivity of less than 0.5%. However, such methods suffer from the material system itself, the range of refractive indices available for adjustment is narrow, and it is difficult to effectively respond to the precise, differentiated needs of refractive indices in a variety of applications. Conventional material combinations are even more limited in the face of specific applications with ultra-low refractive indices (e.g., below 1.3). Disclosure of Invention The invention aims to provide an antireflection film and a preparation method thereof, wherein the antireflection film has low film thickness and low reflectivity. In order to achieve the above object, a specific embodiment of the present invention provides the following technical solution: An antireflection film comprises a base material layer, a hardening layer, an optical resin coating, a bonding layer and an antireflection layer which are sequentially laminated; Wherein the anti-reflection layer is a porous silicon oxide coating, the porosity is 38% -42%, and the refractive index is 1.281-1.300. In one or more embodiments of the invention, the thickness of the anti-reflection layer is 85nm to 95nm. In one or more embodiments of the present invention, the optical resin coating is an acrylic resin layer containing nano zirconia, and has a thickness of 100nm to 140nm. In one or more embodiments of the invention, the stiffening layer is an acrylic layer having a thickness of 2 μm to 5 μm. In one or more embodiments of the present invention, the bonding layer is any one of a silicon plating layer, a nichrome plating layer, a titanium plating layer, and a zirconia plating layer, and has a thickness of 0.2nm to 0.5nm. In one or more embodiments of the present invention, a supporting layer is further disposed between the bonding layer and the anti-reflection layer, and the supporting layer is a silicon oxide coating, and the thickness is 8nm-15nm. In one or more embodiments of the present invention, a supporting layer is disposed on a side of the anti-reflection layer facing away from the adhesive layer, the supporting layer is a porous silica coating, the porosity is 29% -32%, the refractive index is 1.329-1.344, and the thickness is 8nm-15nm. The technical scheme provided by the other specific embodiment of the invention is as follows: a method of manufacturing an antireflection film, the method comprising the steps of: Taking a substrate layer; sequentially preparing a hardening layer and an optical resin coating on the substrate layer; Preparing a bonding layer on the optical resin coating; Preparing an oxide layer on the bonding layer by using any one of a silicon-aluminum target, a silicon-copper target and a silicon-chromium target through magnetron sputtering; and etching the oxide layer by using phosphoric acid solution to form a porous silicon oxide coating layer, so as to obtain the antireflection film. In one or more embodiments of the invention, the silicon mass ratio in the silicon-aluminum target, the silicon mass ratio in the silicon-copper target and the silicon mass ratio in the silicon-chromium target are all 42% -46%, or, The concentration of the phosphoric acid solution is 50% -85%, or, Firstly, etching an oxide layer by using a phosphoric acid solution with the concentration of 50 percent, wherein the temperature is 55-65 ℃, the etching time is 8-12 min, then adding a pho