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CN-122018096-A - Optical co-packaging interlayer interconnection device and method based on 3D printing

CN122018096ACN 122018096 ACN122018096 ACN 122018096ACN-122018096-A

Abstract

The application relates to an optical co-packaging interlayer interconnection device and method based on 3D printing. The device comprises an optical fiber array, an optical chip module and a photoelectric conversion chip, wherein the optical fiber array is used for transmitting optical signals, the optical chip module at least comprises two optical chips which are mutually connected through a plurality of 3D printing waveguides, the optical chip module and the optical fiber array are mutually connected through 3D printing photon leads, and the photoelectric conversion chip is mutually connected with the optical chip module for optical signals and performing photoelectric conversion on the optical signals. According to the application, through the integrated 3D printing reflector (angle error is less than or equal to 0.05 degrees), turning loss is less than or equal to 0.3 dB/time, compared with the existing 3D printing scheme (> 1 dB/time), butt joint loss is less than or equal to 0.5dB through a graded refractive index interface, compared with the traditional wire bonding scheme (> 3 dB), total interlayer loss is less than or equal to 1.1dB, and the low loss requirement of high-speed CPO is met.

Inventors

  • HUANG JIYING
  • CHEN ZHAOJIAN

Assignees

  • 南方海洋科学与工程广东省实验室(珠海)

Dates

Publication Date
20260512
Application Date
20251222

Claims (10)

  1. 1. An optical co-packaging interlayer interconnection device based on 3D printing, comprising: An optical fiber array for transmitting optical signals; the optical chip module at least comprises two optical chips which are interconnected between layers through a plurality of 3D printing waveguides, and the optical chip module and the optical fiber array are interconnected with each other through photon leads printed in 3D; and the photoelectric conversion chip is connected with the optical chip module through optical signals and performs photoelectric conversion on the optical signals.
  2. 2. The 3D printing-based optical co-packaging interlayer interconnection device according to claim 1, wherein the optical chip module comprises an optical I/O chip and an optical on-chip signal processing chip, wherein the optical I/O chip and the optical fiber array realize optical signal interconnection through 3D printed photon leads, the optical I/O chip and the optical on-chip signal processing chip realize interlayer interconnection through a plurality of 3D printed waveguides, and the optical on-chip signal processing chip and the photoelectric conversion chip perform optical signal interconnection.
  3. 3. The 3D printing-based optical co-packaged interlayer interconnection device of claim 1, wherein each 3D printed waveguide comprises a first graded index Taper interface, a first horizontal waveguide section, a first mirror, a vertical waveguide section, a second mirror, a second horizontal waveguide section, and a second graded index Taper interface, wherein: The optical signal of any optical chip enters the 3D printing waveguide through a first graded index Taper interface, enters the vertical waveguide section through vertical turning after passing through the first horizontal waveguide section and the first reflecting mirror in sequence, enters the second horizontal waveguide section through vertical turning of the second reflecting mirror, and enters the other optical chip through a second graded index Taper interface.
  4. 4. The 3D printing-based optical co-packaging interlayer interconnection device according to claim 3, wherein the outer surfaces of the first and second reflectors are coated with a reflective film, and the outer surfaces of the reflective films are further coated with an antioxidant layer.
  5. 5. The 3D printing-based optical co-packaged interlayer interconnection device according to claim 1, wherein a port at which the optical chip is connected to the 3D printed waveguide is provided with a silylated layer.
  6. 6. The 3D printing-based optical co-packaged interlayer interconnection device of any of claims 1 to 5, further comprising a base, wherein the optical fiber array, the optical chip module, and the photoelectric conversion chip are all disposed on the base.
  7. 7. A method of interconnecting 3D printing-based optical co-packaged inter-layer interconnects according to claim 6, comprising the steps of: packaging at least two optical chips of the optical chip module in a stacking way and fixing the optical chips on the base; Fixing the optical fiber array on the base, wherein the optical fiber array and the uppermost optical chip of the optical chip module are positioned at the same height; Fixing the photoelectric conversion chip on the base; connecting the optical fiber array with the optical chip module through a 3D printing photon lead; And interconnecting at least two optical chip layers of the optical chip module through the 3D printing waveguide.
  8. 8. The method for interconnecting optical co-packaged interlayer interconnection devices based on 3D printing of claim 7, further comprising performing a silylation process on at least two optical chips of the optical chip module before stacking and packaging the at least two optical chips to generate a silylated layer.
  9. 9. The interconnection method of the 3D printing-based optical co-packaging interlayer interconnection device according to claim 8, wherein the silylating the at least two optical chips to generate a silylated layer comprises: pre-treating, namely cleaning an optical chip, and activating the optical chip by using plasma to change the surface of the optical chip into hydrophilic; Preparing a solution by mixing ethanol and 3-trimethoxysilylpropyl methacrylate in a culture dish, and adding diluted acetic acid before immersing an optical chip; immersing the optical chip in the prepared solution, flushing the device with isopropanol solution after immersing for a preset time, blowing dry with nitrogen, completing silanization treatment, and generating a silanization treatment layer at a port connected with the 3D printing waveguide.
  10. 10. The method for interconnecting the 3D printing-based optical co-package interlayer interconnection device according to claim 7, wherein the stacking and packaging at least two optical chips of the optical chip module comprises fixing the optical chips located at the upper layer on the optical chips located at the lower layer in a four-corner flip-chip manner.

Description

Optical co-packaging interlayer interconnection device and method based on 3D printing Technical Field The application relates to the technical field of photon integration and photoelectron packaging, in particular to an optical co-packaging interlayer interconnection device and method based on 3D printing. Background At present, the CPO chip interlayer optical wave interconnection technology related to the invention mainly comprises the following points: 1. Traditional wire bonding + vertical optocoupler technology The upper chip and the lower chip in the CPO framework are connected by utilizing a metal lead or a single-mode fiber, vertical optical couplers (such as micro lenses and grating couplers) are additionally arranged at two ends of the lead/the fiber, and light waves transmitted horizontally are converted into vertical transmission through the couplers, so that interlayer interconnection is realized, and the CPO 800G module which is typically used as a Broadcom module is typically used. The design processing method of the technology is mature, can be compatible with the existing CPO packaging production line, has lower cost and is commercially oriented to medium-low speed CPO scenes, but relies on high-precision visual equipment to realize alignment of leads/optical fibers and a chip layer, the insertion loss is more than 3dB due to alignment deviation (> 2 mu m) in practical application, the lead spacing is more than 100 mu m, a high-density channel (< 50 channels/cm < 2 >) cannot be adapted, and the requirements of CPO of the next generation of 1.6T and above are difficult to meet. 2. Through Silicon Via (TSV) +microlens array technology And etching a vertical through hole (TSV) on a silicon substrate, depositing an insulating layer and a conductive layer in the hole, integrating micro-lens arrays at two ends of the TSV, converting light waves from horizontal transmission to vertical transmission through refraction action of micro-lenses, and realizing interlayer interconnection, wherein a typical research team is Intel laboratories and bench accumulation. The technology realizes higher integration level (channel density >80 channels/cm <2 >), stable vertical transmission distance and is suitable for a silicon-based CPO chip, but the technology is complex, the cost is 40% higher than that of the traditional scheme through more than 6 steps of deep silicon etching (depth >100 mu m), insulating layer deposition, micro lens adhesion and the like, the difference of thermal expansion coefficients of TSVs (silicon materials) and micro lenses (glass materials) is large (delta alpha >5 x 10 < -6 >/DEG C), lens deflection is easy to occur in a working environment of-40-85 ℃, long-term reliability is reduced (loss change >0.5dB/1000 h), and meanwhile, the technology is only suitable for waveguides on the silicon substrate and cannot be compatible with other types such as silicon nitride. 3. Existing 3D printing optical interconnection technology The polymer waveguide is printed by adopting desktop-level 3D printing equipment (such as Formlabs Form) and is stuck to the turning position of the waveguide through an external metal reflector to realize vertical light wave turning, or a curved waveguide with a large curvature radius (500 μm) is directly printed for CPO interlayer interconnection, and a typical research team is the institute of technology of Massachu Medica (MIT) and Huashi research institute of Hais. The technology is flexible in process, short in rapid prototype manufacturing period (< 3 h) and capable of rapidly adjusting the waveguide structure, but the technology is not optimized for CPO interlayer narrow spacing (50-200 mu m), the resolution of the adopted desktop-level equipment is greater than 25 mu m, the section error of the waveguide is greater than 10 mu m, dense integration is impossible, an external reflector is required to be assembled independently, the angle error is greater than 0.5 DEG, turning loss is greater than 1 dB/time, a special butt joint structure with an on-chip waveguide is not designed, the butt joint loss is greater than 1dB due to mismatch of refractive indexes (3.45 of the waveguide on the 1.5vs chip), meanwhile, the reflector has no antioxidation treatment, and is easy to oxidize and lose after long-term use. The most similar implementation scheme of the invention is the CPO interconnection scheme of '3D printing polymer waveguide and external reflector' proposed by MIT (published in journal of Optics Express in 2023). The scheme is similar to the scheme of the invention in that the 3D printing technology is adopted to manufacture the waveguide and is used for chip interlayer light wave transmission under the CPO architecture, and the core thought is waveguide transmission and reflection steering. The scheme has obvious defects that firstly, a reflector is externally pasted, the angle error is more than 0.5 degrees, an antioxidation coating is not arranged, tur