CN-122018248-A - Processing method of metal layer layout

CN122018248ACN 122018248 ACN122018248 ACN 122018248ACN-122018248-A

Abstract

The invention provides a processing method of a metal layer layout, which belongs to the technical field of semiconductor manufacturing and comprises the steps of obtaining the metal layer layout and a through hole layer layout corresponding to the metal layer layout, extracting a first process hot spot pattern in the metal layer layout and background patterns in a preset range around the first process hot spot pattern according to a first preset rule, carrying out edge shrinking processing on convex edges on the convex corner pattern according to a first preset displacement to obtain a preprocessed layout, carrying out optical proximity effect correction processing on the preprocessed layout to obtain a corrected layout of the metal layer layout, and carrying out simulation processing on the corrected layout according to a second preset rule to obtain a simulation image. The optical proximity effect correction method can eliminate the process hot spot of the lobe pattern during exposure under a small-size process window, and overcomes the defect that the OPC technology is difficult to sufficiently correct the small-feature-size pattern.

Inventors

Xia Yongteng
LONG JIAO
LIU HUI

Assignees

杭州积海半导体有限公司

Dates

Publication Date: 20260512
Application Date: 20260324

Claims (10)

1. The processing method of the metal layer layout is characterized by comprising the following steps of; S1, acquiring a metal layer layout and a through hole layer layout corresponding to the metal layer layout; S2, extracting a first process hot spot pattern and a background pattern in a preset range around the first process hot spot pattern in the metal layer layout according to a first preset rule, wherein the metal layer layout comprises a metal pattern formed by orthogonal intersection of two metal strips, through hole patterns are correspondingly arranged on an intersection area of the two metal strips, the first process hot spot pattern comprises the intersection area and a convex angle pattern, which extends out of the metal pattern relative to the intersection area, and a first distance between the convex angle pattern and the background pattern is smaller than the first preset distance; S3, performing edge shrinking treatment on the convex corner edges on the convex corner patterns by using a first preset displacement to obtain a preprocessed layout; s4, performing optical proximity effect correction processing on the preprocessing layout to obtain a corrected layout of the metal layer layout; s5, performing simulation processing on the corrected layout according to a second preset rule to obtain a simulation image.
2. The process of claim 1, wherein the metal pattern forms a corner pattern at the intersection region, the first process hotspot pattern having a first adjacent side and a second adjacent side connected at both ends of the lobed side, the first adjacent side being connected to the corner pattern, the second adjacent side facing away from the corner pattern.
3. The processing method according to claim 2, wherein the step S3 further comprises: and acquiring a second distance between the second adjacent edge and the background pattern, and performing edge expansion processing on the second adjacent edge by a second preset displacement when the second distance is larger than the second preset distance, so that the second distance is larger than or equal to the second preset distance.
4. A process according to claim 3, wherein step S5 further comprises: And extracting a second hot spot process pattern from the simulation image corresponding to the first hot spot process pattern, and outputting the simulation image if the second hot spot process pattern meets the preset process requirement.
5. The method of claim 4, wherein outputting the simulated image if the second hotspot process pattern meets a preset process requirement comprises: and if the second hot spot process pattern does not have the bridging image or the broken line image and the coverage rate of the metal pattern in the second hot spot process pattern to the through hole pattern is more than or equal to the preset coverage rate, outputting the simulation image.
6. The processing method according to claim 5, wherein the step S5 further comprises: and if the second hot spot process pattern does not meet the preset process requirement, repeating the steps S3 to S5 until the second hot spot process pattern meets the preset process requirement.
7. The processing method according to claim 1, wherein the first preset displacement is a difference between the first preset distance and the first distance.
8. The process of claim 1, wherein the portion of the background pattern adjacent to the lobe pattern is a metal strip parallel or perpendicular to the outer edge of the lobe pattern.
9. The process of claim 1 wherein the portion of the background pattern adjacent to the lobe pattern is a vertical corner of an L-shaped metal strip.
10. The process of claim 9, wherein the first distance is a shortest distance between the convex corner and the perpendicular corner vertex.

Description

Processing method of metal layer layout Technical Field The invention relates to the technical field of semiconductor manufacturing, in particular to a processing method of a metal layer layout. Background With the progress of semiconductor lithography, the design size of integrated circuits is gradually reduced, and the complexity of metal layer structures leads to a reduction in layout process margin, thereby exacerbating the contradiction between optical proximity effects and process windows. Although the optical proximity correction technique (Optical Proximity Correct, OPC) can solve the problem of layout deviation caused by most of optical proximity effects, the problem of process hot spots may still occur after the complex layout is subjected to OPC treatment. In particular, in a metal layer layout, a lobe pattern with corners connected to the short sides is limited by the resolution of optical imaging due to undersize of features, and serious rounding distortion occurs during exposure imaging. As shown in FIG. 1, under the limitation of small-sized process window, such lobe pattern, even if corrected by OPC treatment, can still cause short circuit, open circuit, poor connection and other process hot spot problems between itself exposed pattern and surrounding exposed metal layer Therefore, there is a need to design a processing method of a metal layer layout to improve the above-mentioned problems. Disclosure of Invention The invention provides a processing method of a metal layer layout, which is used for solving the technical problem that a lobe pattern with a corner in the existing layout is limited by a smaller process window to generate a process hot spot in exposure imaging. In a first aspect, the present invention provides a method for processing a metal layer layout, where the method for processing a metal layer layout includes: S1, acquiring a metal layer layout and a through hole layer layout corresponding to the metal layer layout; S2, extracting a first process hot spot pattern and a background pattern in a preset range around the first process hot spot pattern in the metal layer layout according to a first preset rule, wherein the metal layer layout comprises a metal pattern formed by orthogonal intersection of two metal strips, through hole patterns are correspondingly arranged on an intersection area of the two metal strips, the first process hot spot pattern comprises the intersection area and a convex angle pattern, which extends out of the metal pattern relative to the intersection area, and a first distance between the convex angle pattern and the background pattern is smaller than the first preset distance; S3, performing edge shrinking treatment on the convex corner edges on the convex corner patterns by using a first preset displacement to obtain a preprocessed layout; s4, performing optical proximity effect correction processing on the preprocessing layout to obtain a corrected layout of the metal layer layout; s5, performing simulation processing on the corrected layout according to a second preset rule to obtain a simulation image. In an example of the present invention, the metal pattern is formed with a corner pattern at the intersection region, the first process hot spot pattern has a first adjacent side and a second adjacent side connected at both ends of the lobe side, the first adjacent side is connected with the corner pattern, and the second adjacent side faces away from the corner pattern. In an example of the present invention, the step S3 further includes obtaining a second distance between the second adjacent edge and the background pattern, and performing edge extension processing on the second adjacent edge with a second preset displacement when the second distance is greater than the second preset distance, so that the second distance is greater than or equal to the second preset distance. In an example of the present invention, the step S5 further includes extracting a second hot spot process pattern from the simulation image corresponding to the first hot spot process pattern, and outputting the simulation image if the second hot spot process pattern meets a preset process requirement. In an example of the present invention, outputting the simulation image if the second hot spot process pattern meets a preset process requirement includes outputting the simulation image if the second hot spot process pattern does not have a bridge image or a broken line image and the coverage rate of the metal pattern in the second hot spot process pattern to the via pattern is greater than or equal to a preset coverage rate. In an example of the present invention, the step S5 further includes repeating the steps S3 to S5 if the second hot spot process pattern does not meet the preset process requirement, until the second hot spot process pattern meets the preset process requirement. In an example of the present invention, the first preset displacement is a difference between