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CN-122018256-A - Developing method, patterning method, and method for manufacturing electronic device

CN122018256ACN 122018256 ACN122018256 ACN 122018256ACN-122018256-A

Abstract

The application belongs to the field of electronic devices, and particularly relates to a developing method, a patterning method and a method for preparing an electronic device, which aim to solve the problem of deterioration of an exposure pattern when an exposed patterning layer is developed to form the patterning layer pattern. The functional layer comprises a patterning layer arranged on the substrate and a charge dissipation layer arranged on the patterning layer.

Inventors

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Assignees

  • 珠海基石科技有限公司

Dates

Publication Date
20260512
Application Date
20260410

Claims (15)

  1. 1. A developing method, characterized by comprising: Sequentially performing a first washing treatment, an organic developer treatment, an alkali solution treatment and a second washing treatment on the exposed functional layer; The functional layer comprises a patterning layer arranged on the substrate and a charge dissipation layer arranged on the patterning layer.
  2. 2. The developing method according to claim 1, wherein in the alkali solution treatment, the content of the alkali substance in the alkali solution is 0.1wt% to 20wt% based on the total weight of the alkali solution, or the content of the alkali substance in the alkali solution is in the range of 0.1wt% to 15wt% based on the total weight of the alkali solution, or the content of the alkali substance in the alkali solution is 0.1wt% to 5wt% based on the total weight of the alkali solution; And/or the alkaline substance in the alkaline solution is selected from at least one of an organic base and an inorganic nonmetallic base; and/or the alkali solution is an alkaline aqueous solution.
  3. 3. The developing method according to claim 2, wherein the organic base is at least one selected from the group consisting of an amine compound, a heterocyclic base compound and a quaternary ammonium compound, or the organic base is at least one selected from the group consisting of a primary amine, a secondary amine and a tertiary amine, or the organic base is at least one selected from the group consisting of pyridine, pyrimidine, pyrrole, indole, guanidine, amidine and imidazole, or the organic base is at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, or the organic base is tetra-n-butylammonium hydroxide; And/or in the alkali solution treatment, the time of the alkali solution treatment is 10 s-10 min, or the time of the alkali solution treatment is 10 s-60 s, or the time of the alkali solution treatment is 15 s-45 s.
  4. 4. The developing method according to claim 1, wherein in the organic developer treatment, the organic developer is an organic solvent; Or the organic developer is at least one organic solvent selected from esters, alcohols, ketones, ethers, amides and organic acids; Or the organic developer is at least one alcohol selected from methanol, ethanol, isopropanol, propanol, butanol, ethylene glycol and propylene glycol; or the organic developer is a ketone selected from at least one of acetone, ethyl isobutyl ketone, 3-hydroxy-3-methyl-2-butanone and 4-methyl-2-pentanone; or the organic developer is at least one ether selected from ethylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether and propylene glycol propyl ether; Or the organic developer is at least one amide selected from dimethylformamide, dimethylacetamide, N-methylpyrrolidone and N-ethylpyrrolidone; and/or the organic developer comprises at least one of the following structural formulas; 、 、 And ; Wherein R 1 is selected from any of substituted OR unsubstituted C 1 -C 20 alkyl, si (OR) 3 , and substituted OR unsubstituted C 6 -C 20 aryl; R 2 and R 3 are each independently selected from at least one of hydrogen, substituted OR unsubstituted C 1 -C 20 alkyl, cyano, alkoxy, ester, si (OR) 3 , and substituted OR unsubstituted C 6 -C 20 aryl, wherein R 2 and R 3 are not both hydrogen; R 4 and R 5 are each independently selected from any of substituted OR unsubstituted C 1 -C 20 alkyl, si (OR) 3 , and substituted OR unsubstituted C 6 -C 20 aryl; R 6 is selected from any of hydrogen, substituted or unsubstituted C 1 -C 20 alkyl, and substituted or unsubstituted C 6 -C 20 aryl; R 7 and R 8 are each independently selected from at least one of hydrogen, substituted or unsubstituted C 1 -C 20 alkyl and substituted or unsubstituted C 6 -C 20 aryl; Wherein R is hydrogen or substituted or unsubstituted C 1 -C 20 alkyl, which is substituted or unsubstituted by one or more substituents selected from halogen, hydroxy, amino, C 1 -C 6 alkylamino, di (C 1 -C 6 alkyl) amino, cyano, nitro, ester, C 1 -C 6 alkyl, C 2- C 6 alkenyl, C 2 -C 6 alkynyl, C 1- C 6 alkoxy, C 3 -C 10 carbocyclyl, C 2 -C 10 heterocyclyl, C 6 -C 10 aryl and C 1 -C 10 heteroaryl.
  5. 5. The developing method according to claim 1, wherein the organic developer is treated for 0.5min to 10min, or 30s to 2min, or 90s to 150s.
  6. 6. The developing method according to claim 1, wherein the first washing treatment is a washing treatment using at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent, or the first washing treatment is a washing treatment using pure water; and/or the second washing treatment is to use at least one of pure water, an acidic aqueous solution, an alkaline aqueous solution, and a mixture of water and a water-soluble organic solvent, or the second washing treatment is to use pure water for washing treatment.
  7. 7. The developing method according to claim 1, wherein the time of the first washing treatment is greater than 0 and less than or equal to 10 minutes, or the time of the first washing treatment is 30s to 2 minutes, or the time of the first washing treatment is 30s to 60s, or the time of the first washing treatment is 60s; And/or the time of the second washing treatment is 0.5 min-10 min, or the time of the second washing treatment is 10 s-50 s, or the time of the second washing treatment is 20 s-40 s, or the time of the second washing treatment is 30s.
  8. 8. The developing method according to any one of claims 1 to 7, wherein the charge dissipation layer contains a conductive polymer containing a hydrophilic group; And/or the hydrophilic group is selected from at least one of hydroxyl, phosphate, sulfonamide, phosphate, phosphoryl, amide, carboxamide, sulfonic acid, carboxyl, quaternary ammonium salt and amine, or the hydrophilic group is selected from at least one of phosphate, sulfonic acid and carboxyl, or the hydrophilic group is selected from at least one of sulfonic acid and carboxyl; and/or the conductive polymer is selected from at least one of polythiophene conductive polymer and polyaniline conductive polymer.
  9. 9. The developing method according to claim 8, wherein the charge dissipation layer further comprises an alkaline compound and a surfactant; And/or the patterned layer comprises a chemically amplified patterning composition or a non-chemically amplified patterning composition; and/or the non-chemically amplified patterning composition comprises an acrylic patterning material.
  10. 10. A method of patterning, comprising: Forming a patterning layer on one side of a substrate; Forming a charge dissipation layer on the patterned layer to obtain an initial functional layer comprising the patterned layer and the charge dissipation layer; Exposing the initial functional layer to obtain a functional layer, and The developing method according to any one of claims 1 to 9, wherein the functional layer is subjected to a developing treatment.
  11. 11. The method of patterning of claim 10 wherein said charge dissipation layer completely covers the patterning layer.
  12. 12. A method of manufacturing an electronic device, characterized in that the method comprises patterning using the patterning method according to claim 10 or 11.
  13. 13. An electronic device, characterized in that it is manufactured according to the method of claim 12.
  14. 14. The electronic device of claim 13, wherein the electronic device comprises a semiconductor device.
  15. 15. An electronic device, characterized in that it comprises an electronic device according to claim 13 or 14.

Description

Developing method, patterning method, and method for manufacturing electronic device Technical Field The application belongs to the field of electronic devices, and particularly relates to a developing method, a patterning method and a method for preparing an electronic device. Background The patterning method can realize limit resolution of <10nm and has the advantage of maskless direct writing. However, the insulation of the substrate used can aggravate pattern deformation and write field splicing errors in the patterning process, and this situation can be effectively improved after the charge dissipation layer (Charge Dissipation Layer, CDL) is introduced, but when the exposed patterning layer is developed to form a pattern by using a developing solution, the charge dissipation layer sometimes generates dissolution residues, so that the exposed pattern is deteriorated. Disclosure of Invention The application discloses a developing method, a patterning method and a method for preparing an electronic device, which are used for solving the problem of deterioration of an exposure pattern when developing an exposed patterning layer to form the patterning layer pattern. In a first aspect, the application provides a developing method comprising sequentially performing a first washing treatment, an organic developer treatment, an alkali solution treatment and a second washing treatment on an exposed functional layer, wherein the functional layer comprises a patterning layer arranged on a substrate and a charge dissipation layer arranged on the patterning layer. In one possible implementation manner, in the alkali solution treatment, the content of the alkaline substance in the alkali solution is 0.1wt% to 20wt% based on the total weight of the alkali solution. In one possible implementation, the alkaline substance is present in an amount ranging from 0.1wt% to 15wt% based on the total weight of the alkaline solution. In one possible implementation, the alkaline substance is present in an amount of 0.1wt% to 5wt% based on the total weight of the alkaline solution. In one possible implementation, the alkaline substance in the alkaline solution is selected from at least one of an organic base and an inorganic non-metallic base. In one possible implementation, the alkaline solution is an aqueous alkaline solution. In one possible implementation, the organic base is selected from at least one of an amine compound, a heterocyclic base compound, and a quaternary ammonium compound. In one possible implementation, the organic base is an amine compound selected from at least one of a primary amine, a secondary amine, and a tertiary amine. In one possible implementation, the organic base is a heterocyclic base selected from at least one of pyridine, pyrimidine, pyrrole, indole, guanidine, amidine, and imidazole. In one possible implementation, the organic base is a quaternary ammonium compound selected from at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide. In one possible implementation, the organic base is tetra-n-butylammonium hydroxide. In one possible implementation manner, in the alkali solution treatment, the time of the alkali solution treatment is 10 s-10 min. In one possible implementation, the alkali solution treatment time is 10 s-60 s. In one possible implementation manner, the time of the alkali solution treatment is 15 s-45 s. In one possible implementation, in the organic developer treatment, the organic developer is an organic solvent. In one possible implementation, the organic developer is an organic solvent selected from at least one of esters, alcohols, ketones, ethers, amides, and organic acids. In one possible implementation, the organic developer is an alcohol selected from at least one of methanol, ethanol, isopropanol, propanol, butanol, ethylene glycol, and propylene glycol. In one possible implementation, the organic developer is a ketone selected from at least one of acetone, ethyl isobutyl ketone, 3-hydroxy-3-methyl-2-butanone, and 4-methyl-2-pentanone. In one possible implementation, the organic developer is an ether selected from at least one of ethylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol butyl ether, and propylene glycol propyl ether. In one possible implementation, the organic developer is an amide of at least one of the amides selected from dimethylformamide, dimethylacetamide, N-methylpyrrolidone and N-ethylpyrrolidone. In one possible implementation, in the organic developer treatment, the organic developer includes at least one of the following structural formulas; 、、 And ; Wherein R 1 is selected from any of substituted OR unsubstituted C 1-C20 alkyl, si (OR) 3, and substituted OR unsubstituted C 6-C20 aryl; R 2 and R 3 are each independently selected from at least one of hydrogen, substituted OR unsubstituted C 1-C20 alkyl, cyano, alkoxy, ester, si (OR) 3, and s