CN-122018624-A - Band-gap reference voltage source with high-precision sectional compensation

CN122018624ACN 122018624 ACN122018624 ACN 122018624ACN-122018624-A

Abstract

The band gap reference voltage source with high-precision segment compensation comprises a starting circuit, a core band gap circuit and a segment temperature compensation circuit, wherein the three core circuit units are controlled by the following circuits, when the power supply is powered on, the starting circuit is conducted, initial current is injected, the core band gap circuit is started and outputs basic voltage, the segment compensation circuit synchronously extracts PTAT current to generate temperature coefficient compensation voltage Vcomp, and the temperature coefficient compensation voltage Vcomp and Vbg are subjected to weighted superposition to counteract nonlinear drift so as to stabilize the output reference voltage. Compared with the prior art, the multi-dimensional performance jump is realized through the cooperative framework of temperature coefficient complementation, dynamic curvature compensation and power supply inhibition enhancement.

Inventors

YANG HANG
MING XIN
LU HECHENG
WANG JIE

Assignees

重庆邮电大学

Dates

Publication Date: 20260512
Application Date: 20260210

Claims (7)

1. A band gap reference voltage source with high-precision segment compensation is characterized by comprising a starting circuit, a core band gap circuit and a segment temperature compensation circuit, wherein the three core circuit units are controlled by the following circuits, when a power supply is powered on, the starting circuit is conducted, initial current is injected, the core band gap circuit is started and outputs basic voltage, the segment compensation circuit synchronously extracts PTAT current, generates temperature coefficient compensation voltage Vcomp, and the temperature coefficient compensation voltage Vcomp and the reference voltage Vbg are subjected to weighted superposition to counteract nonlinear drift so as to stabilize the output reference voltage Vref.
2. The high-precision sectionalized compensation band-gap reference voltage source of claim 1, wherein the core band-gap circuit consists of a band-gap reference subunit and a clamping amplifier subunit, wherein a loop is formed by taking a first triode Q1 and a second triode Q2 as core devices in the band-gap reference subunit, wherein a collector of the first triode Q1 is connected with a base of the second triode Q2 through a second resistor R2, an emitter of the second triode is connected with an emitter of the first triode Q1 through a first resistor R1, and an emitter of the first triode Q1 is grounded through a seventh resistor R7; the reference voltage output end Vref voltage is loaded to the collector of the first triode Q1 through a sixth resistor R6, a fourth resistor R4 and a third resistor R3, the reference voltage output end voltage is loaded to the collector of the second triode Q2 through the sixth resistor R6 and a fifth resistor R5, the reference voltage output end voltage is further connected to an electric node B through a serial branch formed by sequentially connecting a ninth resistor R9, a tenth resistor R10 and an eleventh resistor R11, the electric node B is connected with the base of the first triode Q1, the voltage of the connection point of the ninth resistor R9 and the tenth resistor R10 is marked as V REF1 , and the voltage of the connection point of the tenth resistor R10 and the eleventh resistor R11 is marked as V REF2 .
3. A high precision piecewise compensated bandgap reference voltage source as claimed in claim 2 wherein the emitter area ratio of the first transistor Q1 and the second transistor Q2 is matched and controlled by the clamp amplifier subunit such that equal currents flow through the first transistor Q1 and the second transistor Q2.
4. The band gap reference voltage source with high precision segment compensation according to claim 2 or 3, wherein the clamping amplifier subunit is composed of a twelfth MOS tube M12, a third triode Q3 and a fourth triode Q4 as core devices, wherein the grid electrode and the drain electrode of the twelfth MOS tube M12 are mutually short-circuited to form a point node X, the grid electrode of an eleventh MOS tube M11 is connected with the point node X, the source electrode of the eleventh MOS tube M11 and the source electrode of the twelfth MOS tube M12 are both connected with a PRE-bias voltage output end VDDA_PRE, the drain electrode of the eleventh MOS tube M11 is marked as an electric node A, and the electric node A is connected with a reference voltage output end Vref through a source follower formed by a fifteenth MOS tube M15; The base of the third triode Q3 in the clamp amplifier subunit is connected with the collector of the second triode Q2 in the band gap reference subunit, and the base of the fourth triode Q4 in the clamp amplifier subunit is connected with the electric node B in the band gap reference subunit.
5. A band gap reference voltage source with high precision and segment compensation as set forth in claim 1, 2 or 3, wherein the starting circuit comprises a seventh triode Q7, a fifth triode Q5 and a sixth triode Q6, bases and collector electrodes of the fifth triode Q5 and the sixth triode Q6 are short-circuited to form an equivalent diode structure and are grounded after being connected in series, the base electrode of the fifth triode Q5 is connected with the base electrode of the seventh triode Q7, and an emitter electrode of the seventh triode Q7 is connected with a point node X in a clamp amplifier subunit.
6. The high-precision segment-compensated bandgap reference voltage source according to claim 1,2 or 3, wherein the segment temperature compensation circuit comprises a fourteenth MOS tube M14, a first MOS tube M1, a second MOS tube M2, a third MOS tube M3 and a fourth MOS tube M4, wherein the PRE-bias voltage output end VDDA_PRE is applied to the source electrode of the fourteenth MOS tube M14, the drain electrode of the fourteenth MOS tube M14 is grounded through an eighth resistor R8, the current flowing through the eighth resistor R8 is marked as I PATA , and the voltage between the eighth resistor R8 and the ground is marked as V PTAT ; The drain electrode of the first MOS tube M1 is grounded, the source electrodes of the third MOS tube M3 and the fourth MOS tube M4 are connected with the output of a bias current source, the drain electrode of the fourth MOS tube M4 is grounded, the drain electrode of the second MOS tube M2 is connected with the drain electrode of the third MOS tube M3, the connection electric node is marked as C, the electric power saving C is connected with the emitting electrode of the first triode Q1 in the band gap reference subunit, the current flowing out of the electric node C is marked as I_ COMP , and the grid electrodes of the first MOS tube M1, the second MOS tube M2, the third MOS tube M3 and the fourth MOS tube M4 are respectively V PTAT、 V REF1、 V PTAT and V REF1.
7. The high-precision piecewise compensated bandgap reference voltage source of claim 6, wherein sources of the first MOS transistor M1 and the second MOS transistor M2 are connected with an output of a bias current source.

Description

Band-gap reference voltage source with high-precision sectional compensation Technical Field The invention belongs to the technical field of analog integrated circuit design, in particular relates to a high-precision and high-stability optimization technology of a reference voltage/current source, which is particularly suitable for scenes such as precision measurement sensitive to temperature drift and power supply fluctuation, industrial control, high-end power supply management, automobile electronics and the like. Disclosure of Invention Aiming at the technical problems existing in the prior art, the invention aims to provide a band gap reference voltage source with high-precision sectional compensation, which solves the following three core technical problems that 1. The prior art is influenced by PN junction curvature effect, nonlinear drift in a wide temperature region (-40 ℃ to 130 ℃) is remarkable, the precision is insufficient, 2. The compatibility of a compensation circuit and a core band gap circuit is poor, the structure is complex, the power consumption is high, the noise is large, and 3. The compensation in an extreme temperature region is invalid and the environmental adaptability is weak. The final objective is to provide a high-precision band gap reference voltage source with simple structure, low power consumption and stable wide temperature area, realize the temperature coefficient of the temperature area of minus 40 ℃ to 130 ℃ less than or equal to 2.1 ppm/DEGC, voltage drift less than or equal to 0.43mV and static power consumption less than or equal to 100 mu W, and meet the high-precision reference requirements of scenes such as precise measurement, automobile electronics, industrial control and the like. The band gap reference voltage source with high-precision segment compensation comprises a starting circuit, a core band gap circuit and a segment temperature compensation circuit, wherein the three core circuit units are controlled by the following circuits, when the power supply is powered on, the starting circuit is conducted, initial current is injected, the core band gap circuit is started and outputs basic voltage, the segment compensation circuit synchronously extracts PTAT current to generate temperature coefficient compensation voltage Vcomp, and the temperature coefficient compensation voltage Vcomp and Vbg are subjected to weighted superposition to counteract nonlinear drift so as to stabilize the output reference voltage. The core band gap circuit is preferably designed and consists of a band gap reference subunit and a clamping amplifier subunit, wherein a loop is formed by taking a first triode Q1 and a second triode Q2 as core devices in the band gap reference subunit, wherein the collector of the first triode Q1 is connected with the base of the second triode Q2 through a second resistor R2, the emitter of the second triode is connected with the emitter of the first triode Q1 through a first resistor R1, and the emitter of the first triode Q1 is grounded through a seventh resistor R7; the reference voltage output end Vref voltage is loaded to the collector of the first triode Q1 through a sixth resistor R6, a fourth resistor R4 and a third resistor R3, the reference voltage output end voltage is loaded to the collector of the second triode Q2 through the sixth resistor R6 and a fifth resistor R5, the reference voltage output end voltage is further connected to an electric node B through a serial branch formed by sequentially connecting a ninth resistor R9, a tenth resistor R10 and an eleventh resistor R11, the electric node B is connected with the base of the first triode Q1, the voltage of the connection point of the ninth resistor R9 and the tenth resistor R10 is marked as V REF1, and the voltage of the connection point of the tenth resistor R10 and the eleventh resistor R11 is marked as V REF2. Further, the emitter area ratio of the first triode Q1 and the second triode Q2 is matched, and the first triode Q1 and the second triode Q2 can flow equal current through the control of the clamp amplifier subunit. Furthermore, the clamping amplifier subunit is formed by a twelfth MOS tube M12, a third triode Q3 and a fourth triode Q4 as core devices, wherein the grid electrode and the drain electrode of the twelfth MOS tube M12 are in short circuit with each other to form a point node X, the grid electrode of an eleventh MOS tube M11 is connected with the point node X, the source electrode of the eleventh MOS tube M11 and the source electrode of the twelfth MOS tube M12 are both connected with a PRE-bias voltage output end VDDA_PRE, the drain electrode of the eleventh MOS tube M11 is marked as an electric node A, and the electric node A is connected with a reference voltage output end Vref through a source follower formed by a fifteenth MOS tube M15; The base of the third triode Q3 in the clamp amplifier subunit is connected with the collector of the second triode Q2 in th