CN-122020255-A - IBC module potential induced attenuation inhibition optimization method and system

CN122020255ACN 122020255 ACN122020255 ACN 122020255ACN-122020255-A

Abstract

The invention relates to the technical field of potential optimization and discloses a potential induced attenuation suppression optimization method and system for an IBC module, wherein the method comprises the steps of obtaining electric field distribution data between back electrodes of the IBC module under a preset bias voltage; according to electric field distribution data, calculating charge non-uniformity distribution of each local area in the IBC module, identifying a high-risk sub-area of potential induced attenuation in the IBC module based on the charge non-uniformity distribution and a preset charge aggregation threshold value, determining a repair voltage parameter applied to a back finger electrode corresponding to the high-risk sub-area according to the charge non-uniformity corresponding to the high-risk sub-area, generating a repair instruction sequence of the IBC module according to the repair voltage parameter, and carrying out selective and time-ordered local repair treatment on the high-risk sub-area according to the repair instruction sequence.

Inventors

HU JINLONG
LI ZHUOMIN

Assignees

深圳市光瑞实业有限公司

Dates

Publication Date: 20260512
Application Date: 20260204

Claims (10)

1. An IBC module potential induced decay suppression optimization method, comprising: s1, acquiring electric field distribution data between back electrodes of an IBC module under a preset bias voltage; S2, calculating charge non-uniformity distribution of each local area in the IBC module according to the electric field distribution data; s3, identifying a high-risk subarea of potential induced attenuation in the IBC module based on the charge non-uniformity distribution and a preset charge aggregation threshold; S4, determining a repair voltage parameter applied to the back finger electrode corresponding to the high-risk sub-region according to the charge non-uniformity corresponding to the high-risk sub-region; S5, generating a repair instruction sequence of the IBC module according to the repair voltage parameters; s6, carrying out selective and time-sequence local repair processing on the high-risk sub-region according to the repair instruction sequence.
2. The method for optimizing potential induced attenuation suppression of an IBC module according to claim 1, wherein the obtaining the electric field distribution data between the back electrodes of the IBC module under the preset bias voltage includes: Scanning the surface of a back finger electrode of an IBC module under a preset bias voltage to obtain the relative potential difference of each measuring point in the IBC module; correlating the relative potential difference with the space coordinates of the surfaces of the back finger electrodes to obtain preliminary potential distribution data between the back electrodes; According to the known dielectric constant of the IBC module, performing environment interference compensation on the preliminary potential distribution data to obtain corrected potential distribution data; And performing spatial interpolation processing on the corrected potential distribution data on the surface of the back finger electrode to obtain electric field distribution data between the back electrode.
3. The method of optimizing potential induced decay suppression of an IBC module according to claim 1, wherein calculating a charge non-uniformity distribution for each local region within the IBC module based on the electric field distribution data comprises: Dividing a measurement area corresponding to the electric field distribution data into grid subareas according to the physical layout of the back finger electrodes; taking the statistical variance of the electric field intensity of each point in the grid subarea as a first non-uniformity index of the grid subarea; Taking the absolute value of the difference between the average electric field intensity of the grid subarea and all adjacent grid subareas as a second non-uniformity index of the grid subarea; weighting and fusing the first non-uniformity index and the second non-uniformity index corresponding to the grid subarea to generate comprehensive charge non-uniformity of the grid subarea; and collecting all the comprehensive charge non-uniformity to obtain charge non-uniformity distribution of each local area in the IBC module.
4. The method for optimizing IBC module potential induced attenuation suppression according to claim 3, wherein the step of using the statistical variance of the electric field intensity of each point in the grid sub-region as the first non-uniformity index of the grid sub-region includes: extracting all electric field intensity data points belonging to the current grid subarea; calculating an arithmetic mean of all the electric field intensity data points; calculating a square of the difference of each electric field intensity data point from the arithmetic mean; the sum of the squares of the differences and the total number of the electric field intensity data points are used as the statistical variance of the electric field intensity of each point in the grid subarea.
5. The method of optimizing IBC module potential induced decay suppression according to claim 3, wherein the integrated charge non-uniformity is calculated as: ; In the formula, For the integrated charge non-uniformity, To the degree of contribution of the degree of dispersion of the internal charge distribution to the unevenness, As an indicator of the first non-uniformity, For the contribution of the neighborhood differences when the internal variance and the neighborhood differences are simultaneously large, Is the second non-uniformity index.
6. The method of optimizing potential induced decay of IBC modules according to claim 1, wherein identifying high risk subregions of potential induced decay in the IBC modules based on the charge non-uniformity distribution and a preset charge accumulation threshold comprises: traversing the charge non-uniformity distribution to obtain comprehensive charge non-uniformity corresponding to each grid subarea; comparing each integrated charge non-uniformity with a preset charge accumulation threshold one by one; marking the grid subareas with the non-uniformity of the comprehensive charges larger than the preset charge aggregation threshold value as preliminary high-risk areas; performing spatial clustering on the preliminary high-risk areas to obtain continuous high-risk areas; And finally determining the continuous high-risk area with the area larger than a preset minimum area threshold as a high-risk subarea of potential induced attenuation in the IBC module.
7. The method for optimizing IBC module potential induced decay suppression according to claim 1, wherein determining the repair voltage parameter applied to the backside finger electrode corresponding to the high risk sub-region according to the charge non-uniformity corresponding to the high risk sub-region comprises: obtaining the maximum value of the integrated charge non-uniformity in all grid subareas in the high-risk subarea; Determining initial voltage amplitude values applied to the corresponding back finger electrodes of the high-risk sub-regions according to the maximum value and a predefined voltage amplitude mapping relation; acquiring the average value of the local average electric field intensity in all grid subareas in the high risk subarea; Determining the polarity of the repair voltage according to the average value of the local average electric field intensity; Determining the application period of the repair voltage by combining the area and shape characteristics of the high-risk subareas; and outputting a repairing voltage parameter which is composed of the initial voltage amplitude, the polarity and the action period.
8. The method of optimizing IBC module potential induced decay suppression according to claim 7, wherein the predefined voltage magnitude mapping comprises: Identifying the maximum value of the charge non-uniformity distribution in the calibration sample IBC module; Applying repair voltages with different magnitudes to the calibration sample IBC module under the controllable laboratory condition, and determining an optimal repair voltage magnitude for enabling performance recovery to reach a preset target by monitoring the photoelectric performance recovery degree of the calibration sample IBC module; And establishing a corresponding relation data set between the maximum value of the integrated charge non-uniformity and the optimal repair voltage amplitude to obtain a voltage amplitude mapping relation.
9. The method for optimizing potential-induced attenuation suppression of an IBC module according to claim 1, wherein generating a repair instruction sequence of the IBC module according to the repair voltage parameter includes: decomposing the repair voltage parameter into three independent control fields, wherein the three independent control fields correspond to a voltage amplitude field, a polarity field and an action period field respectively; acquiring a space coordinate code of the geometric center of the high-risk sub-region in the back finger electrode layout; Carrying out format encapsulation on the space coordinate codes and the three independent control fields to obtain a single repair instruction block corresponding to the high-risk sub-region; Determining the arrangement execution sequence of a plurality of single repair instruction blocks according to the space distance among a plurality of high-risk subregions and the corresponding magnitude of the comprehensive charge non-uniformity value; and sequentially connecting a plurality of single repair instruction units in series according to the arrangement execution sequence, and inserting an equipment state query instruction between adjacent instruction units to obtain a repair instruction sequence of the IBC module.
10. An IBC module potential induced decay suppression optimization system for implementing an IBC module potential induced decay suppression optimization method according to claim 1, the system comprising: the electric field distribution acquisition module is used for acquiring electric field distribution data between the back electrodes of the IBC module under a preset bias voltage; The charge non-uniformity distribution acquisition module is used for calculating charge non-uniformity distribution of each local area in the IBC module according to the electric field distribution data; The risk identification module is used for identifying a high-risk subarea of potential induced attenuation in the IBC module based on the charge non-uniformity distribution and a preset charge aggregation threshold; The repair voltage calibration module is used for determining repair voltage parameters applied to the back finger electrodes corresponding to the high-risk sub-regions according to the charge non-uniformity corresponding to the high-risk sub-regions; the repair instruction generation module is used for generating a repair instruction sequence of the IBC module according to the repair voltage parameters; and the repair module is used for carrying out selective and time-sequence local repair treatment on the high-risk sub-region according to the repair instruction sequence.

Description

IBC module potential induced attenuation inhibition optimization method and system Technical Field The invention relates to the technical field of potential optimization, in particular to an IBC module potential induced attenuation inhibition optimization method and system. Background In the long-term operation process of the IBC module, electric field distribution between the back electrodes is uneven and is easy to cause charge aggregation, so that potential induction attenuation is caused, and the photoelectric conversion efficiency and long-term reliability of the module are seriously affected. The existing suppression optimization technology aiming at the problem mostly adopts an integral type restoration strategy, does not accurately distinguish charge distribution differences of different areas in a module, lacks directional recognition capability for potential induced attenuation high-risk areas, causes unreasonable resource allocation in the restoration process, is difficult to solve charge aggregation problem in a targeted manner, can cause unnecessary influence on performance of normal areas, and is not ideal in overall restoration efficiency and effect. In the prior art, when evaluating the charge distribution state, only charge discrete features with a single dimension are often concerned, and the discrete degree of charge distribution in the region and the charge distribution difference between the regions cannot be comprehensively considered, so that the evaluation of charge non-uniformity is not accurate enough, and reliable basis cannot be provided for the determination of the repair voltage parameters. The method has the advantages that the parameter settings such as the amplitude, the polarity and the action period of the repair voltage are lack of pertinence, or the charge aggregation in a high-risk area cannot be thoroughly eliminated due to insufficient parameters, or the internal structure of the module is damaged due to excessive parameters, so that the potential induced attenuation problem is further aggravated, and the effective recovery and long-term stability of the module performance are difficult to realize. Disclosure of Invention The invention provides a method and a system for inhibiting and optimizing potential induced attenuation of an IBC module, which are used for solving the problems in the background technology. In order to achieve the above purpose, the present invention provides a method for optimizing potential induced attenuation suppression of an IBC module, comprising: s1, acquiring electric field distribution data between back electrodes of an IBC module under a preset bias voltage; S2, calculating charge non-uniformity distribution of each local area in the IBC module according to the electric field distribution data; s3, identifying a high-risk subarea of potential induced attenuation in the IBC module based on the charge non-uniformity distribution and a preset charge aggregation threshold; S4, determining a repair voltage parameter applied to the back finger electrode corresponding to the high-risk sub-region according to the charge non-uniformity corresponding to the high-risk sub-region; S5, generating a repair instruction sequence of the IBC module according to the repair voltage parameters; s6, carrying out selective and time-sequence local repair processing on the high-risk sub-region according to the repair instruction sequence. In a preferred embodiment, the obtaining the electric field distribution data between the back electrodes of the IBC module under a preset bias voltage includes: Scanning the surface of a back finger electrode of an IBC module under a preset bias voltage to obtain the relative potential difference of each measuring point in the IBC module; correlating the relative potential difference with the space coordinates of the surfaces of the back finger electrodes to obtain preliminary potential distribution data between the back electrodes; According to the known dielectric constant of the IBC module, performing environment interference compensation on the preliminary potential distribution data to obtain corrected potential distribution data; And performing spatial interpolation processing on the corrected potential distribution data on the surface of the back finger electrode to obtain electric field distribution data between the back electrode. In a preferred embodiment, the calculating the charge non-uniformity distribution of each local area in the IBC module according to the electric field distribution data includes: Dividing a measurement area corresponding to the electric field distribution data into grid subareas according to the physical layout of the back finger electrodes; taking the statistical variance of the electric field intensity of each point in the grid subarea as a first non-uniformity index of the grid subarea; Taking the absolute value of the difference between the average electric field intensity of the grid su