CN-122020922-A - MMC frequency domain modeling method, equipment, medium and program product

CN122020922ACN 122020922 ACN122020922 ACN 122020922ACN-122020922-A

Abstract

The application relates to the technical field of modeling and discloses an MMC frequency domain modeling method, equipment, a medium and a program product, wherein the MMC frequency domain modeling method comprises the steps of acquiring first modeling data according to measurement data of an alternating current side and a direct current side under the condition that positive sequence disturbance is injected into the alternating current side; the first modeling data at least comprises a first transfer coefficient, second modeling data are obtained according to the measured data of the alternating current side and the direct current side under the condition that negative sequence disturbance is injected into the alternating current side, the second modeling data at least comprise a second transfer coefficient, third modeling data are obtained according to the measured data of the alternating current side and the direct current side under the condition that direct current disturbance is injected into the direct current side, the third modeling data at least comprise a third transfer coefficient and a fourth transfer coefficient, and a frequency domain model is built according to the first modeling data, the second modeling data and the third modeling data. Thereby improving the accuracy of the MMC frequency domain model.

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Assignees

上海科梁信息科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20251231

Claims (10)

1. The MMC frequency domain modeling method is characterized by comprising the steps of: Under the condition that positive sequence disturbance is injected into the alternating current side, acquiring first modeling data according to the measurement data of the alternating current side and the direct current side, wherein the first modeling data at least comprises a first transfer coefficient which represents a voltage relationship or a current relationship between the alternating current side and the direct current side under the positive sequence disturbance; Under the condition that negative sequence disturbance is injected into the alternating current side, second modeling data are obtained according to the measurement data of the alternating current side and the direct current side, wherein the second modeling data at least comprise a second transfer coefficient which represents a voltage relationship or a current relationship between the alternating current side and the direct current side under the negative sequence disturbance; Under the condition that direct current disturbance is injected into the direct current side, obtaining third modeling data according to the measuring data of the alternating current side and the direct current side, wherein the third modeling data at least comprises a third transfer coefficient and a fourth transfer coefficient, the third transfer coefficient represents a positive sequence voltage relationship or a positive sequence current relationship between the alternating current side and the direct current side under the direct current disturbance, and the fourth transfer coefficient represents a negative sequence voltage relationship or a negative sequence current relationship between the alternating current side and the direct current side under the direct current disturbance; And constructing a frequency domain model according to the first modeling data, the second modeling data and the third modeling data.
2. The MMC frequency-domain modeling method of claim 1, wherein the MMC is in a dc voltage control mode; The positive sequence disturbance is positive sequence voltage disturbance, the first modeling data comprises positive sequence self admittance, positive sequence negative sequence coupling admittance and positive sequence direct current voltage transfer coefficient, and the first transfer coefficient is positive sequence direct current voltage transfer coefficient; The negative sequence disturbance is negative sequence voltage disturbance, the second modeling data comprises negative sequence self admittance, negative sequence positive sequence coupling admittance and negative sequence direct current voltage transfer coefficient, and the second transfer coefficient is negative sequence direct current voltage transfer coefficient; The direct current disturbance is current disturbance, the third modeling data comprises direct current self-impedance, direct current positive sequence current transfer coefficient and direct current negative sequence current transfer coefficient, the third transfer coefficient is direct current positive sequence current transfer coefficient, and the fourth transfer coefficient is direct current negative sequence current transfer coefficient.
3. The MMC frequency-domain modeling method of claim 2, wherein the acquiring first modeling data from the measurement data of the ac side and the dc side includes: Extracting a first positive sequence current component and a first negative sequence current component under positive sequence voltage disturbance at the alternating current side, extracting a first direct current port voltage component under the positive sequence voltage disturbance at the direct current side, acquiring the positive sequence self-admittance according to the ratio of the first positive sequence current component to the positive sequence voltage disturbance, acquiring the positive sequence negative sequence coupling admittance according to the ratio of the first negative sequence current component to the positive sequence voltage disturbance, and acquiring the positive sequence direct current voltage transfer coefficient according to the ratio of the first direct current port voltage component to the positive sequence voltage disturbance; The obtaining second modeling data according to the measurement data of the alternating current side and the direct current side comprises: Extracting a second negative sequence current component and a second positive sequence current component under the negative sequence voltage disturbance on the alternating current side, extracting a second direct current port voltage component under the negative sequence voltage disturbance on the direct current side, acquiring the negative sequence self admittance according to the ratio of the second negative sequence current component to the negative sequence voltage disturbance, acquiring the negative sequence positive sequence coupling admittance according to the ratio of the second positive sequence current component to the negative sequence voltage disturbance, acquiring the negative sequence direct current voltage transfer coefficient according to the ratio of the second direct current port voltage component to the negative sequence voltage disturbance ; The obtaining third modeling data according to the measurement data of the alternating current side and the direct current side includes: the direct current self-impedance control method comprises the steps of extracting a direct current port voltage component under current disturbance on a direct current side, extracting a third positive sequence current component and a third negative sequence current component under the current disturbance on an alternating current side, obtaining direct current self-impedance according to the ratio of the direct current port voltage component to the current disturbance, obtaining the direct current positive sequence current transfer coefficient according to the ratio of the third positive sequence current component to the current disturbance, and obtaining the direct current negative sequence current transfer coefficient according to the ratio of the third negative sequence current component to the current disturbance.
4. The MMC frequency-domain modeling method of claim 2 or 3, wherein the frequency-domain model includes a positive-sequence frequency-domain model, a negative-sequence frequency-domain model, a direct-current frequency-domain model, wherein the constructing the frequency-domain model from the first modeling data, the second modeling data, and the third modeling data includes: Obtaining a first current source according to the negative sequence voltage disturbance and the negative sequence positive sequence coupling admittance, obtaining a second current source according to the current disturbance and the direct current positive sequence current transfer coefficient, and constructing the positive sequence frequency domain model according to the positive sequence voltage disturbance, the positive sequence self-admittance, the first current source and the second current source; obtaining a third current source according to the positive sequence voltage disturbance and the positive sequence negative sequence coupling admittance, obtaining a fourth current source according to the current disturbance and the direct current negative sequence current transfer coefficient, and constructing the negative sequence frequency domain model according to the negative sequence voltage disturbance, the negative sequence self-admittance, the third current source and the fourth current source; Acquiring a first voltage source according to the positive sequence voltage disturbance and the positive sequence direct current voltage transfer coefficient; and constructing the direct current frequency domain model according to the current disturbance, the direct current self-impedance, the first voltage source and the second voltage source.
5. The MMC frequency-domain modeling method of claim 1, wherein the MMC is in an ac voltage control mode; the positive sequence disturbance is positive sequence current disturbance, the first modeling data comprises positive sequence self-impedance, positive sequence negative sequence coupling impedance and positive sequence direct current transfer coefficient, and the first transfer coefficient is positive sequence direct current transfer coefficient; the negative sequence disturbance is a negative sequence current disturbance, the second modeling data comprises a negative sequence self-impedance, a negative sequence positive sequence coupling impedance and a negative sequence direct current transfer coefficient, and the second transfer coefficient is a negative sequence direct current transfer coefficient; The direct current disturbance is voltage disturbance, the third modeling data comprises direct current self admittance, direct current positive sequence voltage transfer coefficient and direct current negative sequence voltage transfer coefficient, the third transfer coefficient is direct current positive sequence voltage transfer coefficient, and the fourth transfer coefficient is direct current negative sequence voltage transfer coefficient.
6. The MMC frequency-domain modeling method of claim 5, wherein the acquiring first modeling data from the measurement data of the ac side and the dc side includes: Extracting a first positive sequence voltage component and a first negative sequence voltage component under positive sequence current disturbance at the alternating current side, extracting a first direct current port current component under the positive sequence current disturbance at the direct current side, acquiring the positive sequence self-impedance according to the ratio of the first positive sequence voltage component to the positive sequence current disturbance, acquiring the positive sequence negative sequence coupling impedance according to the ratio of the first negative sequence voltage component to the positive sequence current disturbance, and acquiring the positive sequence direct current transfer coefficient according to the ratio of the first direct current port current component to the positive sequence current disturbance; The obtaining second modeling data according to the measurement data of the alternating current side and the direct current side comprises: Extracting a second negative sequence voltage component and a second positive sequence voltage component under the negative sequence current disturbance at the alternating current side, extracting a second direct current port current component under the negative sequence current disturbance at the direct current side, acquiring the negative sequence self-impedance according to the ratio of the second negative sequence voltage component to the negative sequence current disturbance, acquiring the negative sequence positive sequence coupling impedance according to the ratio of the second positive sequence voltage component to the negative sequence current disturbance, and acquiring the negative sequence direct current transfer coefficient according to the ratio of the second direct current port current component to the negative sequence current disturbance; The obtaining third modeling data according to the measurement data of the alternating current side and the direct current side includes: The direct current self-admittance is obtained according to the ratio of the third direct current port current component to the voltage disturbance, the direct current positive sequence voltage transfer coefficient is obtained according to the ratio of the third positive sequence voltage component to the voltage disturbance, and the direct current negative sequence voltage transfer coefficient is obtained according to the ratio of the third negative sequence voltage component to the voltage disturbance.
7. The MMC frequency-domain modeling method of claim 5 or 6, wherein the frequency-domain model includes a positive-sequence frequency-domain model, a negative-sequence frequency-domain model, and a direct-current frequency-domain model, wherein the constructing the frequency-domain model from the first modeling data, the second modeling data, and the third modeling data includes: Obtaining a third voltage source according to the negative sequence current disturbance and the negative sequence positive sequence coupling impedance, obtaining a fourth voltage source according to the voltage disturbance and the direct current positive sequence voltage transfer coefficient, and constructing the positive sequence frequency domain model according to the positive sequence current disturbance, the positive sequence self impedance, the third voltage source and the fourth voltage source; obtaining a fifth voltage source according to the positive sequence current disturbance and the positive sequence negative sequence coupling impedance, obtaining a sixth voltage source according to the voltage disturbance and the direct current negative sequence voltage transfer coefficient, and constructing the negative sequence frequency domain model according to the negative sequence self-impedance, the fifth voltage source and the sixth voltage source; obtaining a fifth current source according to the positive sequence current disturbance and the positive sequence direct current transfer coefficient, obtaining a sixth current source according to the negative sequence current disturbance and the negative sequence direct current transfer coefficient, and constructing the direct current frequency domain model according to the voltage disturbance, the direct current self admittance, the fifth current source and the sixth current source.
8. An electronic device comprising at least one processor, and A memory communicatively coupled to the at least one processor, wherein, The memory stores instructions executable by the at least one processor to enable the at least one processor to perform the MMC frequency-domain modeling method of any of claims 1-7.
9. A computer readable storage medium storing a computer program, wherein the computer program when executed by a processor implements the MMC frequency-domain modeling method of any of claims 1-7.
10. A computer program product comprising a computer program which, when executed by a processor, implements the MMC frequency-domain modeling method of any of claims 1-7.

Description

MMC frequency domain modeling method, equipment, medium and program product Technical Field The application relates to the technical field of modeling, in particular to an MMC frequency domain modeling method, equipment, a medium and a program product. Background Under the background of transforming global energy structures into high-proportion renewable energy sources, the flexible direct current transmission technology has become a key support technology for realizing energy resource optimal allocation and cross-region interconnection by virtue of the core advantages of long-distance large-capacity transmission, new energy friendly grid connection, flexible power grid regulation and control and the like, and the technology is widely applied in important energy engineering, and the running stability of the technology directly determines the safety ground line and the power supply reliability of energy transmission. However, with the remarkable characteristics of high power electronics and low inertia weak damping of the power system, dynamic interaction between the flexible direct current system and the alternating current power grid is more complex, novel problems such as subsynchronous oscillation and harmonic instability are very easy to cause, and a serious challenge is provided for system stability analysis. MMC (Modular Multilevel Converter, modularized multi-level converter) is used as core equipment of a flexible direct current system, and the immittance characteristic of the MMC is a core basis for revealing a system dynamic interaction mechanism and developing stability analysis. At present, the immittance analysis method is a main flow tool for evaluating the stability of the power electronic system, and the implementation premise of the method is to obtain an MMC accurate and independent positive sequence network model, a negative sequence network model and a direct current network model, and the three models form a basic data support system for stability analysis. However, the current MMC has poor modeling accuracy, and cannot meet the requirement of engineering on high-precision modeling. Disclosure of Invention The embodiment of the application aims to provide an MMC frequency domain modeling method, equipment, a medium and a program product, so that the accuracy of an MMC frequency domain model is improved. In order to solve the technical problems, the embodiment of the application provides an MMC frequency domain modeling method, wherein the MMC is provided with an alternating current side and a direct current side, the method comprises the steps of acquiring first modeling data according to measured data of the alternating current side and the direct current side under the condition that positive sequence disturbance is injected into the alternating current side, wherein the first modeling data at least comprises a first transfer coefficient which represents a voltage relation or a current relation between the alternating current side and the direct current side under the condition that positive sequence disturbance is injected into the alternating current side, acquiring second modeling data according to measured data of the alternating current side and the direct current side under the condition that negative sequence disturbance is injected into the alternating current side, wherein the second modeling data at least comprises a second transfer coefficient which represents a voltage relation or a current relation between the alternating current side and the direct current side under the condition that negative sequence disturbance is injected into the direct current side, acquiring third modeling data according to measured data of the alternating current side and the alternating current side under the condition that the direct current side is injected into the direct current side, and constructing a third modeling data at least comprises a third transfer coefficient which represents a third transfer coefficient, a fourth transfer coefficient which represents a voltage relation or a third modeling relation between the alternating current side and the direct current side under the condition that the negative sequence disturbance is injected into the alternating current side, and the direct current side, and the third modeling data under the condition that the negative sequence disturbance is represented by the third transfer coefficient or the first modeling data is represented by the negative sequence relation or the direct current side. The embodiment of the application also provides electronic equipment, which comprises at least one processor and a memory in communication connection with the at least one processor, wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the MMC frequency domain modeling method. The embodiment of the application also pr