CN-122020939-A - Simulation model construction method, wafer scratch simulation method, simulation model construction device, wafer scratch simulation device, electronic device, computer-readable medium, and computer program product

Abstract

The embodiment of the application provides a simulation model construction method, a simulation method of wafer scratches, a simulation model construction device, a simulation device of wafer scratches, electronic equipment, a computer readable medium and a computer program product. The method comprises the steps of obtaining grinding parameters of a chemical mechanical grinding process causing scratches, wherein the grinding parameters comprise a first motion parameter and a second motion parameter, the first motion parameter is used for representing a motion track of a grinding pad, the second motion parameter is used for representing a motion track of a wafer, a static model and a dynamic model are established for fitting the scratches based on the grinding parameters, the positions of grinding particles causing the scratches on the grinding pad are unchanged in the static model, the positions of the grinding particles causing the scratches on the grinding pad are changed along with grinding time in the dynamic model, and the static model and the dynamic model are used for simulating the scratches of the wafer in the grinding process. The method can improve the fitting effect of scratch fitting in the chemical mechanical polishing process.

Inventors

• WU SISHI

Assignees

• 上海集成电路研发中心有限公司
• 上海微迈睿科技有限公司

Dates

Publication Date

20260512

Application Date

20241112

Claims (19)

1. 1. A simulation model construction method, the method comprising: acquiring polishing parameters of a chemical mechanical polishing process causing scratches, wherein the polishing parameters comprise a first motion parameter and a second motion parameter, the first motion parameter is used for representing a motion track of a polishing pad, and the second motion parameter is used for representing a motion track of a wafer; and establishing a static model and a dynamic model for fitting the scratches based on the grinding parameters, wherein the positions of the grinding particles causing the scratches on the grinding pad are unchanged in the static model, the positions of the grinding particles causing the scratches on the grinding pad are changed along with the grinding time in the dynamic model, and the static model and the dynamic model are used for simulating the wafer scratches in the grinding process.
2. 2. The method of claim 1, wherein a polishing head is provided on the wafer, the polishing head moving synchronously with the wafer, the creating a static model and a dynamic model fitting the scratch based on the polishing parameters comprising: Obtaining fitted first scratch position information according to first particle coordinate information of grinding particles at preset grinding time and first polishing head coordinate information of a polishing head; establishing a static model fitting the scratch based on the functional relation between the first scratch position information, the first particle coordinate information and first polishing head coordinate information of a polishing head; continuously iterating the first particle coordinate information and the first polishing head coordinate information based on the static model to obtain fitted second scratch position information; And establishing a dynamic model fitting the scratch based on the functional relation between the second scratch position information and the target particle coordinate information of the abrasive particles at the target moment and the target polishing head coordinate information of the polishing head.
3. 3. The method according to claim 2, wherein obtaining the fitted first scratch position information according to the first particle coordinate information of the abrasive particles at the preset grinding time and the first polishing head coordinate information of the polishing head includes: acquiring initial particle coordinate information of the abrasive particles under a first coordinate system at an initial moment and first origin position information of a second coordinate system; Obtaining first particle coordinate information of the grinding particles under a third coordinate system according to the initial particle coordinate information, first origin position information of a second coordinate system, the first motion parameter and the duration between the initial moment and the grinding moment; and obtaining fitted first scratch position information based on the first particle coordinate information of the abrasive particles under the third coordinate system.
4. 4. The method according to claim 3, wherein the obtaining fitted first scratch location information based on first particle coordinate information of the abrasive particles in a third coordinate system comprises: Obtaining the motion speed of the polishing head along one axis of the first coordinate system according to the second motion parameter and the start-stop position information of the polishing head; Obtaining first polishing head coordinate information of the polishing head under a second coordinate system according to the movement speed of the polishing head and the duration between the initial time and the polishing time; and obtaining fitted first scratch position information based on the first polishing head coordinate information of the polishing head under the second coordinate system and the first particle coordinate information of the grinding particles under the third coordinate system.
5. 5. The method according to claim 4, wherein the obtaining the fitted first scratch position information based on the first polishing head coordinate information of the polishing head in the second coordinate system and the first particle coordinate information of the abrasive particles in the third coordinate system includes: Obtaining static scratch intermediate information of the scratch after fitting in a fourth coordinate system according to the first motion parameter, the first particle coordinate information and the first polishing head coordinate information; And converting the static scratch intermediate information from the fourth coordinate system to a second coordinate system to obtain first scratch position information under the second coordinate system.
6. 6. The method according to claim 5, wherein iterating the first particle coordinate information and the first polishing head coordinate information based on the static model to obtain fitted second scratch location information comprises: Iterating the first particle coordinate information and the first polishing head coordinate information to obtain second particle coordinate information of the grinding particles at the next moment of the grinding moment in the third coordinate system and second polishing head coordinate information of the polishing head in the second coordinate system; obtaining first dynamic scratch intermediate information of scratches at the next moment of the grinding moment under a fourth coordinate system according to the second particle coordinate information and the second polishing head coordinate information; Obtaining second dynamic scratch intermediate information of the next moment of the grinding moment after fitting under a second coordinate system according to the dynamic scratch intermediate information; and iterating the second dynamic scratch intermediate information to obtain fitted second scratch position information.
7. 7. The method according to claim 6, wherein iterating the second dynamic scratch intermediate information to obtain fitted second scratch location information comprises: Iterating the second particle coordinate information and the second polishing head coordinate information, and continuously repeating the iterative process to update the second dynamic scratch intermediate information to obtain target particle coordinate information of the abrasive particles at the target moment and target polishing head coordinate information of the polishing head; and obtaining fitted second scratch position information according to the target particle coordinate information of the abrasive particles at the target moment and the target polishing head coordinate information of the polishing head.
8. 8. The simulation method of the wafer scratch is characterized by comprising the following steps of: Acquiring the number of scratches and the curvature of each scratch in the chemical mechanical polishing process; Selecting one of a static model and a dynamic model based on the number of scratches and the curvature of each scratch, and performing automatic simulation or semi-automatic simulation on each scratch to obtain scratch simulation data matched with the number of scratches and the curvature of each scratch, wherein the static model and the dynamic model are constructed by adopting the method as set forth in any one of claims 1-7.
9. 9. The method of claim 8, wherein the obtaining the number of scratches and the curvature of each of the scratches during chemical mechanical polishing comprises: Acquiring image information of a wafer, and determining position information of scratches on the wafer according to the image information; And determining the number of scratches and the curvature of each scratch according to the position information of the scratches on the wafer.
10. 10. The method of claim 9, wherein determining location information of scratches on the wafer from the image information comprises: Identifying the center coordinates and the radius of the wafer on the image according to the image information of the wafer; Linearly mapping the circle center coordinates and the radius of the wafer on the image according to the actual radius of the wafer to obtain stretched image information; and identifying position information of the scratch according to the stretched image information, wherein the position information of the scratch comprises coordinates of each pixel point at the scratch.
11. 11. The method of claim 10, wherein the identifying the center coordinates and radius of the wafer on the image based on the image information of the wafer comprises: acquiring coordinate values of each pixel point of a wafer boundary in two directions of a row and a column in the image information of the wafer; and determining the center coordinates and the radius of the wafer on the image based on the coordinate values of each pixel point of the wafer boundary in the row-column directions.
12. 12. The method according to claim 8, wherein the selecting one of a static model and a dynamic model based on the number of scratches and the curvature of each of the scratches to perform an automated simulation or a semi-automated simulation on each of the scratches, obtaining scratch simulation data adapted to the number of scratches and the curvature of each of the scratches comprises: when the number of scratches is smaller than a first number threshold and the curvature of each scratch is in a first curvature range, selecting the static model to automatically simulate each scratch to obtain first scratch simulation data; when the number of scratches is greater than or equal to a first number threshold and the curvature of each scratch is in a second curvature range, selecting the static model to perform semi-automatic simulation on each scratch selected in sequence to obtain second scratch simulation data; And when the curvature of each scratch is in a third curvature range, selecting the dynamic model to perform semi-automatic simulation on each scratch selected in turn, and obtaining third scratch simulation data.
13. 13. The method of claim 8, wherein the method further comprises: Comparing the scratch simulation data with the position information of the scratches on the wafer to obtain a scratch comparison result; and determining the accuracy of scratch fitting according to the scratch comparison result.
14. 14. The method of claim 8, wherein the scratch simulation data includes location information for a plurality of fitted scratch points that were fitted, the method further comprising: Calculating the shortest distance between each scratch point in the scratch simulation data and the scratch on the wafer one by one to obtain a plurality of fitting distances, wherein the fitting distances are used for representing the fitting degree of the plurality of fitted scratch points and the scratch on the wafer; Judging whether the fitting distance is smaller than a preset fitting threshold value or not; if the fitting distance is smaller than a preset fitting threshold value, determining a scratch point corresponding to the fitting distance as a source for causing scratches on the wafer; and if the fitting distance is greater than or equal to a preset fitting threshold, filtering the scratch points corresponding to the fitting distance.
15. 15. A simulation model construction apparatus, characterized in that the apparatus comprises: the first acquisition module is used for acquiring grinding parameters of a chemical mechanical grinding process causing scratches, wherein the grinding parameters comprise first motion parameters and second motion parameters, the first motion parameters are used for representing the motion track of a grinding pad, and the second motion parameters are used for representing the motion track of a wafer; The fitting module is used for establishing a static model and a dynamic model for fitting the scratches based on the grinding parameters, wherein the positions of the grinding particles causing the scratches on the grinding pad are unchanged in the static model, the positions of the grinding particles causing the scratches on the grinding pad are changed along with the grinding time in the dynamic model, and the static model and the dynamic model are used for simulating wafer scratches in the grinding process.
16. 16. A wafer scratch simulation apparatus, comprising: the second acquisition module is used for acquiring the number of scratches and the curvature of each scratch in the chemical mechanical polishing process; A selection module, configured to select one of a static model and a dynamic model based on the number of scratches and the curvature of each of the scratches, and perform automatic simulation or semi-automatic simulation on each of the scratches to obtain scratch simulation data adapted to the number of scratches and the curvature of each of the scratches, where the static model and the dynamic model are constructed by using the method according to any one of claims 1-7.
17. 17. An electronic device is characterized by comprising a memory and a processor; The memory stores computer-executable instructions; the processor executing computer-executable instructions stored in the memory, causing the processor to perform the method of any one of claims 1-14.
18. 18. A computer readable storage medium having stored therein computer executable instructions which when executed by a processor are adapted to carry out the method of any one of claims 1-14.
19. 19. A computer program product comprising a computer program which, when executed by a processor, implements the method of any of claims 1-14.

Description

Simulation model construction method, wafer scratch simulation method, simulation model construction device, wafer scratch simulation device, electronic device, computer-readable medium, and computer program product Technical Field The present application relates to the field of wafer defect evaluation technologies, and in particular, to a simulation model construction method, a simulation method for wafer scratches, a simulation model construction apparatus, a simulation apparatus for wafer scratches, an electronic device, a computer readable medium, and a computer program product. Background Chemical Mechanical Polishing (CMP) is an indispensable planarization step in advanced processes, and is performed by combining chemical etching and mechanical removal to planarize the wafer surface. However, the surface of the wafer may be scratched during the polishing process, and the defect of the wafer scratch needs to be analyzed. In the related art, defect analysis in the chemical mechanical polishing process either depends on manual adjustment, has complicated flow, or adopts a full-automatic fitting mode, but the analysis model of the full-automatic fitting mode has poor effect, and rough approximation is mostly adopted, so that the applicability is limited and the fitting effect is poor. Disclosure of Invention The embodiment of the application provides a simulation model construction method, a simulation method of wafer scratches, a simulation model construction device, a simulation device of wafer scratches, electronic equipment, a computer readable medium and a computer program product, which are used for improving the accuracy of the scratch fitting in the chemical mechanical polishing process, expanding the application range of the scratch fitting, and improving the fitting effect of the scratch fitting in the chemical mechanical polishing process. In a first aspect, an embodiment of the present application provides a method for constructing a simulation model, where the method includes obtaining polishing parameters of a chemical mechanical polishing process for causing scratches, where the polishing parameters include a first motion parameter and a second motion parameter, the first motion parameter is used to represent a motion track of a polishing pad, and the second motion parameter is used to represent a motion track of a wafer, establishing a static model and a dynamic model for fitting the scratches based on the polishing parameters, where a position of a polishing particle for causing the scratches on the polishing pad is unchanged in the static model, and a position of a polishing particle for causing the scratches on the polishing pad is changed with polishing time in the dynamic model, and the static model and the dynamic model are used to simulate the scratches of the wafer in the polishing process. In one possible implementation manner, a polishing head is arranged on the wafer, the polishing head moves synchronously with the wafer, the static model and the dynamic model for fitting the scratches are built based on the polishing parameters, the static model for fitting the scratches is built based on the static model, the second scratch position information is built based on the static model, the dynamic model for fitting the scratches is built based on the second scratch position information and the functional relation between the target particle coordinate information of the polishing particles at the target moment and the target polishing head coordinate information of the polishing head, and the static model is built based on the functional relation between the first scratch position information and the first particle coordinate information and the first polishing head coordinate information of the polishing head. In one possible implementation manner, obtaining the fitted first scratch position information according to the first particle coordinate information of the abrasive particles at the preset grinding moment and the first polishing head coordinate information of the polishing head comprises obtaining initial particle coordinate information of the abrasive particles at the initial moment under a first coordinate system and first origin position information of a second coordinate system, obtaining the first particle coordinate information of the abrasive particles at a third coordinate system according to the initial particle coordinate information, the first origin position information of the second coordinate system, the first motion parameter and the duration between the initial moment and the grinding moment, and obtaining the fitted first scratch position information based on the first particle coordinate information of the abrasive particles at the third coordinate system. In one possible implementation manner, the obtaining the fitted first scratch position information based on the first particle coordinate information of the polishing particle under the third coordinate s