CN-122021053-A - Method and device for predicting rate of high-temperature deposition growth SiC, equipment and medium

CN122021053ACN 122021053 ACN122021053 ACN 122021053ACN-122021053-A

Abstract

The invention relates to a method, a device, equipment and a medium for predicting the rate of SiC growth by high-temperature deposition, which relate to the field of silicon carbide preparation and comprise the steps of obtaining a source gas system adopted by a high-temperature chemical vapor deposition method, establishing a chemical kinetics mechanism model, establishing thermodynamic data and a transport database according to gas components related to the chemical kinetics mechanism model, designating working conditions, dividing grids between a gas inlet and the surface of a seed crystal, solving by combining the chemical kinetics mechanism model, the thermodynamic data and the transport database to obtain a steady-state control equation, and carrying out iterative operation until calculation convergence of a flow field, a temperature field and a chemical field to obtain the growth rate of the SiC crystal by high-temperature chemical vapor deposition. According to the rate prediction method provided by the invention, the rate of growing the silicon carbide crystal by the high-temperature chemical vapor deposition method can be rapidly and accurately calculated by solving the control equation of the one-dimensional impact flow, the spiral flow and the chemical component transport model.

Inventors

FEI LEI
SHEN CONG
YAO LIJUN
BIAN YIJUN
GUO FUCHENG
Zuo Wansheng

Assignees

嘉兴晶丰同创半导体技术有限公司

Dates

Publication Date: 20260512
Application Date: 20260227

Claims (10)

1. A method for predicting the rate of high temperature deposition growth of silicon carbide, the method comprising: acquiring a source gas system adopted by a high-temperature chemical vapor deposition method, and establishing a chemical kinetics mechanism model; According to the gas components related to the chemical kinetics mechanism model, thermodynamic data and a transport database are established; and designating working conditions, dividing grids between the gas inlet and the surface of the seed crystal, solving by combining a chemical kinetics mechanism model, thermodynamic data and a transport database to obtain a steady-state control equation suitable for the transportation of the impact flow, the spiral flow and the chemical components, and carrying out iterative operation until the flow field, the temperature field and the chemical field are calculated and converged to obtain the growth rate of the silicon carbide crystal grown by high-temperature chemical vapor deposition.
2. The method of claim 1, wherein the source gas system comprises propane, silane, and hydrogen.
3. The method of claim 1, wherein the gas composition comprises propane, silane, hydrogen, and gases generated during the reaction.
4. The method of claim 1 wherein the specified operating conditions include reactor inlet gas composition, flow rate and temperature, surface temperature and rotational speed of the rotating seed, operating pressure and linear distance of the gas inlet to the seed surface.
5. The method of claim 1, wherein the steady state control equations for impingement flow, spiral flow and chemical component transport include conservation of mass, conservation of momentum, conservation of energy, conservation of vapor phase component transport, and conservation of surface species component transport.
6. The rate prediction method of claim 1 wherein the computing convergence comprises residual calculations for flow field, temperature field and chemical field < target residual.
7. The method of claim 1, wherein the chemical field comprises a one-dimensional distribution of chemical species along a gas inlet to a seed surface.
8. A rate prediction device for growing silicon carbide by high temperature deposition, the rate prediction device comprising: the first module is used for acquiring a source gas system adopted by the high-temperature chemical vapor deposition method and establishing a chemical kinetics mechanism model; the second module is used for establishing thermodynamic data and a transport database according to the gas components related to the chemical kinetics mechanism model; The prediction module is used for dividing grids between the gas inlet and the surface of the seed crystal based on a specified working condition, then solving by combining a chemical kinetics mechanism model, thermodynamic data and a transport database to obtain a steady-state control equation suitable for the transport of the impact flow, the spiral flow and the chemical components, and carrying out iterative operation until the flow field, the temperature field and the chemical field are calculated and converged to obtain the growth rate of the silicon carbide crystal grown by high-temperature chemical vapor deposition.
9. An electronic device, the electronic device comprising: And a memory communicatively coupled to the at least one processor; Wherein the memory stores a computer program executable by the at least one processor to enable the at least one processor to perform the high temperature deposition growth silicon carbide rate prediction method of any one of claims 1-7.
10. A computer storage medium having stored therein computer executable instructions which when executed by a processor implement the method of predicting the rate of high temperature deposition grown silicon carbide as claimed in any one of claims 1 to 7.

Description

Method and device for predicting rate of high-temperature deposition growth SiC, equipment and medium Technical Field The invention relates to the field of silicon carbide preparation, in particular to a method, a device, equipment and a medium for predicting the rate of SiC grown by high-temperature deposition, and especially relates to a one-dimensional calculation method, a device, equipment and a medium for predicting the growth of silicon carbide crystals by a high-temperature chemical vapor deposition method. Background Silicon carbide has evolved from a wide bandgap semiconductor with high potential to a widely accepted material in the power electronics field. Silicon carbide is also widely favored in applications for energy conservation at the electronic device and system level due to its excellent physical properties, such as high breakdown field, excellent thermal conductivity, and extremely high electron saturation velocity, compared to silicon. The superiority of silicon carbide power devices has led to a proliferation of their demands, and thus increasing the supply of silicon carbide wafers is critical to expanding the applications of silicon carbide power devices. The mainstream silicon carbide crystal growth method at present adopts physical vapor transport technology, the equipment maturity is higher, but the source powder is difficult to supplement and the growth speed is lower (0.1-0.2 mm/h). The high-temperature chemical vapor deposition (HTCVD) method can realize high-quality rapid growth (1-3 mm/h) of silicon carbide crystals under certain conditions by continuously introducing source gas, so that the high-temperature chemical vapor deposition (HTCVD) method is a crystal growth technology which is paid attention to at present. At present, the silicon carbide crystal growing by adopting a high-temperature chemical vapor deposition method is still in a development stage, engineering application is still immature, the influence of technological parameters on the growth speed still needs to be clear, the iteration speed of equipment is low, the cost is high, and the early research and development of the equipment are limited to a certain extent. Therefore, developing a growth rate calculation method for growing silicon carbide crystals by a high-temperature chemical vapor deposition method has important significance for the research and development of equipment, can obviously reduce the research and development cost and quicken the research and development process. Disclosure of Invention In view of the problems existing in the prior art, the invention aims to provide a method, a device, equipment and a medium for predicting the rate of high-temperature deposition growth SiC, so as to realize efficient and accurate prediction of the growth rate of the high-temperature deposition growth SiC and improve the optimization efficiency of the process and the equipment for high-temperature chemical vapor deposition growth SiC. To achieve the purpose, the invention adopts the following technical scheme: in a first aspect, the present invention provides a method for predicting the rate of high temperature deposition growth of silicon carbide, the method comprising: acquiring a source gas system adopted by a high-temperature chemical vapor deposition method, and establishing a chemical kinetics mechanism model; According to the gas components related to the chemical kinetics mechanism model, thermodynamic data and a transport database are established; and designating working conditions, dividing grids between the gas inlet and the surface of the seed crystal, solving by combining a chemical kinetics mechanism model, thermodynamic data and a transport database to obtain a steady-state control equation suitable for the transportation of the impact flow, the spiral flow and the chemical components, and carrying out iterative operation until the flow field, the temperature field and the chemical field are calculated and converged to obtain the growth rate of the silicon carbide crystal grown by high-temperature chemical vapor deposition. According to the rate prediction method provided by the invention, the rate of growing the silicon carbide crystal by the high-temperature chemical vapor deposition method can be rapidly and accurately calculated by solving the control equation of the one-dimensional impact flow, spiral flow and chemical component transport model, so that references are provided for equipment research and development and research cost is reduced. As a preferred embodiment of the present invention, the source gas system includes propane, silane and hydrogen. As a preferable technical scheme of the invention, the gas component comprises propane, silane, hydrogen and gas generated in the reaction process. As a preferable technical scheme of the invention, the specified working conditions comprise gas components, flow and temperature of an inlet of the reaction furnace, surface temperature a