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CN-122021487-A - Voltage domain information generation method, system, equipment and storage medium

CN122021487ACN 122021487 ACN122021487 ACN 122021487ACN-122021487-A

Abstract

The embodiment of the application provides a voltage domain information generation method, a system, equipment and a storage medium, wherein the method comprises the steps of obtaining a top layer design of a chip, wherein the top layer design comprises a to-be-processed module, configuring a cross-voltage domain marking unit for a cross-voltage domain port in the to-be-processed module based on circuit connection logic of the top layer design, wherein cross-voltage domain information corresponding to the cross-voltage domain marking unit is matched with cross-voltage domain information of a port corresponding to the cross-voltage domain marking unit, and generating port constraint information corresponding to the port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, wherein the port constraint information comprises the cross-voltage domain information of the port. The method can rapidly and accurately obtain the cross-voltage domain information of the chip design.

Inventors

  • CHENG WEI
  • WANG WANFENG

Assignees

  • 海光云芯集成电路设计(上海)有限公司

Dates

Publication Date
20260512
Application Date
20251219

Claims (14)

  1. 1. A method for generating voltage domain information, comprising: Acquiring a top layer design of a chip, wherein the top layer design comprises a module to be processed; configuring a cross-voltage domain marking unit for a cross-voltage domain port in the module to be processed based on the circuit connection logic designed by the top layer, wherein the cross-voltage domain information of the cross-voltage domain marking unit is matched with the cross-voltage domain information of the port corresponding to the cross-voltage domain marking unit; and generating port constraint information corresponding to a port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, wherein the port constraint information comprises the cross-voltage domain information of the port.
  2. 2. The method for generating voltage domain information according to claim 1, wherein after generating port constraint information corresponding to a port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, further comprising: based on the port constraint information, a corresponding cross-voltage domain unit is inserted for the module design corresponding to the module to be processed.
  3. 3. The method for generating voltage domain information according to claim 1 or 2, wherein the configuring a cross-voltage domain marking unit for a cross-voltage domain port in the module to be processed based on the circuit connection logic of the top-level design includes: removing units which are irrelevant to circuit connection logic in the module, and only reserving units which are relevant to circuit electrode logic; Based on the circuit connection logic in the top-level design, configuring a circuit connection scheme for the module to be processed; and configuring a cross-voltage domain marking unit for a port with a cross-voltage domain in the module to be processed based on the circuit connection scheme.
  4. 4. A voltage domain information generating method according to claim 3, wherein the removing of the cells in the module that are not related to the circuit connection logic, only the cells that are related to the circuit electrode logic, comprises: removing other units except the port in the module; A buffer corresponding to the port is configured for the port within the module.
  5. 5. The method for generating voltage domain information according to claim 3, wherein the configuring a circuit connection scheme for a module to be processed based on the circuit connection logic in the top-level design specifically comprises: configuring a connection path based on a voltage domain of the connected input port; Or alternatively Configuring a connection path based on the top voltage domain; Or alternatively The configuration of the connection paths is based on the top-level voltage domain and the voltage domain of the connected output port.
  6. 6. The method for generating voltage domain information as claimed in claim 5, wherein, In the step of configuring the connection path based on the voltage domain of the connected input port, when the input port connected with an output port has the input port of the same voltage domain, in the configured connection path, the output port is connected with the input port; when an input port connected with an output port corresponds to the input ports of a plurality of different voltage domains, in the configured connection path, the output port is split into a plurality of output sub-ports, and the output sub-ports are connected to the input ports of the voltage domains corresponding to the output sub-ports based on the different voltage domains; The configuration of the cross-voltage domain marking unit for the port with the cross-voltage domain in the to-be-processed module based on the circuit connection scheme comprises the steps of determining a connection path with the cross-voltage domain in the connection path based on the voltage domain information corresponding to the port connected with the connection path, and configuring the cross-voltage domain marking unit to the port with the cross-voltage domain based on the standard voltage domain.
  7. 7. The method for generating voltage domain information as claimed in claim 5, wherein, In the step of configuring the connection path based on the top voltage domain, in the configured connection path, an output port is connected with an input port to be connected, and when a port of a voltage domain different from the top voltage domain exists, a partition marking unit is configured for the port; Based on the circuit connection scheme, a cross-voltage domain marking unit is configured for a port with a cross-voltage domain in a module to be processed, and specifically, the cross-voltage domain marking unit is configured for the port in a connection path with a partition marking unit.
  8. 8. The method for generating voltage domain information as claimed in claim 5, wherein, The step of configuring the connection path based on the top voltage domain and the voltage domain of the connected output port comprises the following steps: When an input port connected with an output port has the same voltage domain, the output port is connected with the input port if the voltage domain of the output port is the same as the input port in the configured connection path, and the output port is connected with the input port if the voltage domain of the output port is different from the input port and a partition marking unit is configured for the port of the voltage domain different from the top layer voltage domain; If the input port connected with an output port is provided with a plurality of voltage domains, and the input port with the same voltage domain as the voltage domain of the output port exists at the same time, and the input port with different voltage domains from the voltage domain of the output port, in the configured connection path, the output port is split into 2 output sub-ports, and the output sub-ports are connected to the input ports of the corresponding voltage domains based on whether the voltage domain of the output port is the same as the voltage domain of the output port, wherein the input port is connected with an output sub-port, and if the voltage domain of the input port is different from the output port, the input port is connected with another output sub-port, and a partition marking unit is configured for the ports, different from the top voltage domain, of the input port and the output sub-ports; Based on the circuit connection scheme, a cross-voltage domain marking unit is configured for a port with a cross-voltage domain in a module to be processed, and specifically, the cross-voltage domain marking unit is configured for the port in a connection path with a partition marking unit.
  9. 9. The method for generating voltage domain information according to claim 4, wherein, based on the circuit connection scheme, in the step of configuring a cross-voltage domain flag unit for a port having a cross-voltage domain in a module to be processed, a top-level multi-voltage domain implementation is performed based on a calling tool, and a level conversion unit is inserted between the port of the module and a buffer corresponding to the port.
  10. 10. The method of generating voltage domain information according to claim 4, wherein generating port constraint information corresponding to a port of the cross-voltage domain flag unit based on the cross-voltage domain information of the cross-voltage domain flag unit comprises: acquiring the cross-voltage domain information of the cross-voltage domain marking unit as the cross-voltage domain information of the port corresponding to the cross-voltage domain marking unit; And generating port constraint information corresponding to the port based on the cross-voltage domain information of the port.
  11. 11. The method for generating voltage domain information according to claim 2, wherein in the step of inserting a corresponding cross-voltage domain unit for a module design corresponding to a module to be processed based on the port constraint information, if splitting of ports exists in a circuit connection scheme configured for the module to be processed, the split ports are further configured as sub-ports with a required splitting number before the corresponding cross-voltage domain flag unit is inserted.
  12. 12. A voltage domain information generation system, comprising: the information acquisition module is used for acquiring a top layer design of the chip, wherein the top layer design comprises a module to be processed; The port configuration module is used for configuring a cross-voltage domain marking unit for the port of the cross-voltage domain in the module to be processed based on the circuit connection logic designed by the top layer, wherein the cross-voltage domain information corresponding to the cross-voltage domain marking unit is matched with the cross-voltage domain information of the port corresponding to the cross-voltage domain marking unit; The information generation module is used for generating port constraint information corresponding to the port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, wherein the port constraint information comprises the cross-voltage domain information of the port.
  13. 13. A voltage domain information generating device characterized in that the voltage domain information generating device is loaded with the voltage domain information generating system according to claim 12.
  14. 14. A storage medium storing loading data of the voltage domain information generating system according to claim 12.

Description

Voltage domain information generation method, system, equipment and storage medium Technical Field The embodiment of the application relates to the technical field of chips, in particular to a voltage domain information generation method, a system, equipment and a storage medium. Background In large-scale digital chip design, the power consumption of the chip can be reduced by using power supplies with different voltages (i.e. multiple voltage domains) in different areas. Accordingly, in such a power consumption design, the voltage domain corresponding to each module needs to be finely controlled to realize the functions of each module of the chip. However, how to quickly and accurately obtain the voltage domain information corresponding to the chip design in the chip design stage is a problem to be solved by those skilled in the art. Disclosure of Invention In view of this, embodiments of the present application provide a method, a system, a device, and a storage medium for generating voltage domain information, so as to quickly and accurately obtain cross-voltage domain information of a chip design. In order to achieve the above purpose, the embodiment of the present application provides the following technical solutions. In a first aspect, an embodiment of the present application provides a voltage domain information generating method, including: Acquiring a top layer design of a chip, wherein the top layer design comprises a module to be processed; configuring a cross-voltage domain marking unit for a cross-voltage domain port in the module to be processed based on the circuit connection logic designed by the top layer, wherein the cross-voltage domain information of the cross-voltage domain marking unit is matched with the cross-voltage domain information of the port corresponding to the cross-voltage domain marking unit; and generating port constraint information corresponding to a port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, wherein the port constraint information comprises the cross-voltage domain information of the port. Optionally, after generating the port constraint information corresponding to the port of the cross-voltage domain marking unit based on the cross-voltage domain information of the cross-voltage domain marking unit, the method further includes: based on the port constraint information, a corresponding cross-voltage domain unit is inserted for the module design corresponding to the module to be processed. Optionally, the circuit connection logic based on the top-level design configures a cross-voltage domain marking unit for a cross-voltage domain port in the module to be processed, including: removing units which are irrelevant to circuit connection logic in the module, and only reserving units which are relevant to circuit electrode logic; Based on the circuit connection logic in the top-level design, configuring a circuit connection scheme for the module to be processed; and configuring a cross-voltage domain marking unit for a port with a cross-voltage domain in the module to be processed based on the circuit connection scheme. Optionally, the removing the unit irrelevant to the circuit connection logic in the module only retains the unit relevant to the circuit electrode logic, including: removing other units except the port in the module; A buffer corresponding to the port is configured for the port within the module. Optionally, the configuring a circuit connection scheme for the module to be processed based on the circuit connection logic in the top layer design specifically includes: configuring a connection path based on a voltage domain of the connected input port; Or alternatively Configuring a connection path based on the top voltage domain; Or alternatively Configuring a connection path based on the top voltage domain and the voltage domain of the connected output port; Optionally, in the step of configuring a connection path based on the voltage domain of the connected input port, when the input port connected with an output port has an input port with the same voltage domain, the output port is connected with the input port in the configured connection path; when an input port connected with an output port corresponds to the input ports of a plurality of different voltage domains, in the configured connection path, the output port is split into a plurality of output sub-ports, and the output sub-ports are connected to the input ports of the voltage domains corresponding to the output sub-ports based on the different voltage domains; The configuration of the cross-voltage domain marking unit for the port with the cross-voltage domain in the to-be-processed module based on the circuit connection scheme comprises the steps of determining a connection path with the cross-voltage domain in the connection path based on the voltage domain information corresponding to the port connected