CN-122021488-A - Method and device for analyzing reinforcement reliability of anti-radiation circuit

CN122021488ACN 122021488 ACN122021488 ACN 122021488ACN-122021488-A

Abstract

The invention discloses an analysis method and device for reinforcement reliability of an anti-radiation circuit, relates to the technical field of integrated circuits, and aims to solve the problems that the existing analysis method for reinforcement reliability of an anti-radiation circuit is complex in process and cannot accurately analyze whether the circuit can keep stable after multi-node overturning. The method comprises the steps of obtaining reliability analysis requirements of an anti-radiation circuit to be analyzed, generating directed graphs of different storage states according to circuit structures of the anti-radiation circuit to be analyzed, determining a first vertex set according to the number of radiation sensitive nodes corresponding to the reliability analysis requirements, and carrying out reachability analysis of all storage nodes in the directed graphs according to the first vertex set to obtain analysis results, wherein the reliability of the anti-radiation circuit to be analyzed is determined based on the analysis results. The method provided by the invention is used for simplifying the reinforcement reliability analysis process of the anti-radiation circuit, and accurately analyzing the reliability of the circuit after single-node or multi-node overturning.

Inventors

LIU HAINAN
ZHAO WEN
YAN ZHENZHEN
LI DUOLI
LIU TINGTING
MA QUANGANG
ZHAO WENXIN
LI BO

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260512
Application Date: 20260120

Claims (10)

1. An analytical method for the reinforcement reliability of an irradiation-resistant circuit, which is characterized by comprising the following steps: Acquiring reliability analysis requirements of an anti-radiation circuit to be analyzed, wherein the reliability analysis requirements comprise single-point anti-radiation performance reliability analysis and multi-point anti-radiation performance reliability analysis; Generating a directed graph of different storage states according to the circuit structure of the anti-radiation circuit to be analyzed, wherein the directed graph comprises storage nodes of the anti-radiation circuit to be analyzed and directed edges, the directed edges are used for connecting the storage nodes with potential association relations, and the direction of the directed edges is used for representing positive contribution to the potential of the directed storage nodes; determining a first vertex set according to the number of radiation sensitive nodes corresponding to the reliability analysis requirement, wherein the number of storage nodes in the first vertex set is the same as the number of radiation sensitive nodes; And carrying out accessibility analysis of each storage node in the directed graph according to the first vertex set to obtain an analysis result, and determining the reliability of the anti-irradiation circuit to be analyzed based on the analysis result.
2. The method for analyzing the reliability of the reinforcement of the irradiation resistance circuit according to claim 1, wherein the determining the reliability of the irradiation resistance circuit to be analyzed based on the analysis result further comprises: if the irradiation resisting circuit to be analyzed is unreliable, judging whether a directed graph of the irradiation resisting circuit to be analyzed is a strong connected subgraph, wherein the strong connected subgraph is a directed graph which only comprises one directed ring and all storage nodes in the directed graph are roots; if yes, reconstructing the directed graph into a first topological graph or a second topological graph, wherein the first topological graph is the directed graph comprising at least two independent directed rings, and the second topological graph is the directed graph comprising the directed rings and hanging points; if not, reconstructing the directed graph into a third topological graph, wherein the third topological graph is at least one suspension point more than the directed graph, and the number of roots is less than or equal to 2; And redesigning the circuit structure of the irradiation-resisting circuit to be analyzed based on a reconstructed directed graph, wherein the reconstructed directed graph comprises a first topological graph, a second topological graph and a third topological graph.
3. The method for analyzing the reinforcement reliability of the irradiation-resistant circuit according to claim 1, wherein the storage states of the irradiation-resistant circuit to be analyzed comprise a first state and a second state, the directed graph comprises a first directed graph and a second directed graph, the first directed graph is a directed graph reflecting forward contribution conditions among storage nodes in the first state, the second directed graph is a directed graph reflecting forward contribution conditions among storage nodes in the second state, and the determining a first vertex set according to the number of irradiation-sensitive nodes corresponding to the reliability analysis requirement comprises: When the irradiation potential analysis requirement is single-point irradiation resistance reliability analysis, determining N combined first vertex sets, wherein the number of storage nodes in each first vertex set is 1;N which is equal to the total number of storage nodes in an irradiation resistance circuit to be analyzed; When the irradiation potential analysis requirement is multi-point irradiation resistance reliability analysis, determining And the first vertex sets are combined, the number of storage nodes in each first vertex set is m, and m is the number of radiation sensitive nodes.
4. The method for analyzing the reliability of the reinforcement of the irradiation-resistant circuit according to claim 1, wherein the step of performing the reachability analysis of each storage node in the directed graph according to the first vertex set to obtain the analysis result comprises: Determining a first reachable storage node corresponding to the storage node in the first vertex set in the second directed graph as a storage node in the second vertex set, and determining storage nodes except for the storage node in the second vertex set in the second directed graph as robust nodes; Determining a second reachable storage node corresponding to the robust node in the first directed graph as a storage node in the third vertex set, wherein the second reachable storage node is all storage nodes which can be reached in the first directed graph from the robust node along the direction of the directed edge; And analyzing the circuit state of the anti-radiation circuit to be analyzed based on the number of the storage nodes in the second vertex set and the third vertex set to obtain an analysis result.
5. The method for analyzing the reinforcement reliability of the irradiation-resistant circuit according to claim 4, wherein analyzing the circuit state of the irradiation-resistant circuit to be analyzed based on the number of the storage nodes in the second vertex set and the third vertex set to obtain the analysis result comprises: judging whether the first number of the second vertex centralized storage nodes is the same as the total storage point number of the anti-radiation circuit to be analyzed; if the first number of the second vertex centralized storage nodes is the same as the total storage nodes of the anti-irradiation circuit to be analyzed, the circuit state of the anti-irradiation circuit to be analyzed is changed; If the first number is smaller than the total storage node number, judging whether the second number of the third vertex centralized storage nodes is the same as the total storage node number; if the second number of the third vertex centralized storage nodes is the same as the total storage nodes, the circuit state of the anti-radiation circuit to be analyzed is unchanged; and when the second number is smaller than the total storage node number, the circuit of the irradiation-resistant circuit to be analyzed is in an intermediate state.
6. The method for analyzing the reliability of the reinforcement of the irradiation resistance circuit according to claim 5, wherein the determining the reliability of the irradiation resistance circuit to be analyzed based on the analysis result comprises: If the analysis result is that the circuit state is changed or the circuit is in the intermediate state, the anti-irradiation circuit to be analyzed is unreliable, and if the analysis result is that the circuit state is unchanged, the anti-irradiation circuit to be analyzed is reliable.
7. The method for analyzing the reinforcement reliability of the irradiation resistance circuit according to claim 3, wherein the method comprises the steps of generating a directed graph of different storage states according to the circuit structure of the irradiation resistance circuit to be analyzed; extracting a storage node in the anti-irradiation circuit to be analyzed; when the anti-irradiation circuit to be analyzed is in a first state, determining a first potential association relation between storage nodes, and connecting the storage nodes corresponding to the first potential association relation with forward contribution through the directed edges to obtain a first directed graph; And when the anti-irradiation circuit to be analyzed is in a second state, determining a second potential association relation between storage nodes, and connecting the storage nodes corresponding to the second potential association relation with forward contribution through the directed edges to obtain a second directed graph.
8. The method according to claim 7, wherein when the first state is a state in which the storage state of the irradiation resistance circuit to be analyzed is 1, the second state is a state in which the storage state of the irradiation resistance circuit to be analyzed is 0.
9. The method for analyzing the reliability of the reinforcement of the irradiation-resistant circuit according to claim 2, The storage nodes corresponding to the roots in the third topological graph in the redesigned anti-irradiation circuit diagram to be analyzed are connected with transistors of the same type.
10. An apparatus for analyzing the reliability of reinforcement of an irradiation-resistant circuit, comprising: The reliability analysis demand acquisition module is used for acquiring the reliability analysis demand of the irradiation-resistant circuit to be analyzed, wherein the reliability analysis demand comprises single-point irradiation-resistant performance reliability analysis and multi-point irradiation-resistant performance reliability analysis; The directed graph conversion module is used for generating directed graphs with different storage states according to the circuit structure of the anti-irradiation circuit to be analyzed, wherein the directed graph comprises storage nodes of the anti-irradiation circuit to be analyzed and directed edges, the directed edges are used for connecting the storage nodes with potential association relations, and the directions of the directed edges are used for representing positive contribution to the potential of the pointed storage nodes; the first vertex set determining module is used for determining a first vertex set according to the number of radiation sensitive nodes corresponding to the reliability analysis requirement, wherein the number of storage nodes in the first vertex set is the same as the number of radiation sensitive nodes; And the reliability analysis module is used for carrying out accessibility analysis of each storage node in the directed graph according to the first vertex set to obtain an analysis result, and determining the reliability of the anti-radiation circuit to be analyzed based on the analysis result.

Description

Method and device for analyzing reinforcement reliability of anti-radiation circuit Technical Field The invention relates to the technical field of integrated circuits, in particular to an analysis method and an analysis device for reinforcement reliability of an anti-irradiation circuit. Background The most sensitive area is typically the reverse biased PN junction when the particle strikes the microelectronic device. Because the high field in the reverse biased junction depletion region can collect particle induced charges very efficiently through the drift process, creating a transient current at the junction contact. Taking a CMOS inverter as an example, when the output is 1, the drain electrode of the N-type transistor is a sensitive area, negative charges are collected when the N-type transistor is impacted by particles to form transient current, voltage jump from 1 to 0 occurs at the output end of the inverter, and similarly, when the output is 0, the drain electrode of the P-type transistor is a sensitive area, positive charges are collected when the N-type transistor is impacted by particles to form transient current, and voltage jump from 0 to 1 occurs at the output end of the inverter. In the field of radiation-resistant circuit design, in order to improve radiation resistance of a circuit and reduce the possibility of errors after the circuit is impacted by particles, radiation-resistant reinforcement (RHBD, radiation Hardened By Design) is a common means by adopting a circuit design method. After the irradiation-resistant reinforcement design is completed, the reinforcement reliability thereof needs to be analyzed. The prior two analysis methods, namely, the first analysis method generally analyzes each possible voltage jump condition through classifying and discussing each node of the RHBD circuit structure, records the influence of each condition on the stability of the circuit structure, and analyzes the influence of each transistor if the voltage jump conditions of each node 0 to 1 and 1 to 0 are respectively discussed, and finally reflects the influence of the output result of the circuit, thereby judging the reinforcement reliability of the irradiation-resistant circuit. The second analysis method is to infer the reliability of a single node by determining the potential control relationship or forward contribution relationship between the respective storage nodes in different logic states, by judging whether a specific node has a mutual forward contribution in other states, and finally evaluate the reinforcement reliability of the whole circuit. According to the method, when a plurality of storage nodes are overturned at the same time, the superposition effect possibly generated among different node disturbance and the influence of the superposition effect on the integral state evolution of the circuit are not considered, and whether the circuit can keep stable after the multi-node overturning can not be accurately analyzed. Disclosure of Invention The invention aims to provide an analysis method and device for the reinforcement reliability of an anti-radiation circuit, which are used for solving the problems that the existing analysis method for the reinforcement reliability of the anti-radiation circuit is complex in process and can not accurately analyze whether the circuit can keep stable after multi-node overturning. In order to achieve the above object, the present invention provides the following technical solutions: In a first aspect, the present invention provides a method for analyzing the reinforcement reliability of an anti-irradiation circuit, comprising: Acquiring reliability analysis requirements of an anti-radiation circuit to be analyzed, wherein the reliability analysis requirements comprise single-point anti-radiation performance reliability analysis and multi-point anti-radiation performance reliability analysis; Generating a directed graph of different storage states according to the circuit structure of the anti-radiation circuit to be analyzed, wherein the directed graph comprises storage nodes of the anti-radiation circuit to be analyzed and directed edges, the directed edges are used for connecting the storage nodes with potential association relations, and the direction of the directed edges is used for representing positive contribution to the potential of the directed storage nodes; determining a first vertex set according to the number of radiation sensitive nodes corresponding to the reliability analysis requirement, wherein the number of storage nodes in the first vertex set is the same as the number of radiation sensitive nodes; And carrying out accessibility analysis of each storage node in the directed graph according to the first vertex set to obtain an analysis result, and determining the reliability of the anti-irradiation circuit to be analyzed based on the analysis result. Optionally, the determining the reliability of the anti-radiation circuit to b