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CN-122021495-A - Capacitance value extraction method, device and equipment

CN122021495ACN 122021495 ACN122021495 ACN 122021495ACN-122021495-A

Abstract

The application relates to the field of integrated circuit design and discloses a method, a device and equipment for extracting capacitance values, wherein the method comprises the steps of determining combined capacitance matched with offset of each side wall in a pre-generated capacitance lookup table based on relative position relation between a first metal layer and a second metal layer, representing offset of one side wall of the two adjacent metal layers, representing offset of one metal layer and one group of side walls of the other metal layer on the side, calculating face capacitance components of the first metal layer and the second metal layer based on preset unit face capacitance and projection overlapping width between the first metal layer and the second metal layer, and calculating capacitance values between the first metal layer and the second metal layer according to the combined capacitance matched with the face capacitance components and the offset of each side wall. The technical scheme provided by the application can improve the extraction efficiency of the parasitic capacitance of the metal layer.

Inventors

  • Request for anonymity

Assignees

  • 杭州行芯科技有限公司

Dates

Publication Date
20260512
Application Date
20260403

Claims (10)

  1. 1. A method for extracting a capacitance value, the method comprising: Determining a combined capacitance matched with each sidewall offset in a pre-generated capacitance lookup table based on the relative positional relationship between the adjacent first metal layer and second metal layer, wherein the sidewall offsets of one side of the adjacent two metal layers are characterized by the offsets of one metal layer and one group of sidewalls of the other metal layer on the side; calculating the area capacitance components of the first metal layer and the second metal layer based on a preset unit area capacitance and the projection overlapping width between the first metal layer and the second metal layer; And calculating the capacitance value between the first metal layer and the second metal layer according to the combined capacitance of the face capacitance component and the offset of each side wall.
  2. 2. The method of claim 1, wherein the capacitance look-up table is pre-generated as follows: Obtaining a plurality of metal layer combination samples, wherein the metal layer combination samples comprise adjacent target metal layers and reference metal layers, the width of each target metal layer is a designated unit width, and in one metal layer combination sample, the offset of the side walls of the two sides of each target metal layer and the offset of the side walls of the two sides of each reference metal layer are the same; For each metal layer combination sample, calculating the combination capacitance of the metal layer combination sample based on the sidewall offset in the metal layer combination sample, and establishing an association relationship between the combination capacitance and the sidewall offset of the metal layer combination sample; And counting the association relation between the combined capacitance of each metal layer combination sample and the offset of the side wall, and generating a capacitance lookup table based on the counting result.
  3. 3. The method of claim 1, wherein determining a combined capacitance matching each sidewall offset in a pre-generated capacitance look-up table comprises: judging whether a target offset consistent with the sidewall offset exists in the capacitance lookup table for any sidewall offset; If the combined capacitance associated with the target offset exists, determining the combined capacitance matched with the side wall offset; and if the capacitor is not present, comparing the sidewall offset with each sidewall offset recorded in the capacitor lookup table, and generating a combined capacitor matched with the sidewall offset based on a comparison result.
  4. 4. The method of claim 3, wherein generating a combined capacitance that matches the sidewall offset based on the comparison result comprises: If the sidewall offset is greater than the maximum sidewall offset in the capacitance lookup table, determining a combined capacitance associated with the maximum sidewall offset as a combined capacitance matched with the sidewall offset; If the sidewall offset is not greater than the maximum sidewall offset in the capacitance lookup table, determining a first target offset and a second target offset adjacent to the sidewall offset in the capacitance lookup table, acquiring a first combined capacitance associated with the first target offset and a second combined capacitance associated with the second target offset, and generating a combined capacitance matched with the sidewall offset according to the first combined capacitance and the second combined capacitance.
  5. 5. The method of claim 1, wherein the unit area capacitance is pre-generated as follows: obtaining two groups of symmetrical metal layer combinations with different widths, wherein each group of symmetrical metal layer combinations comprises two metal layers which are arranged in parallel, and the offset of each side wall of each measurement of the two metal layers is zero; generating combined capacitors of each group of symmetrical metal layer combination respectively, and calculating a capacitance difference value between the two combined capacitors; And determining a width difference value between two groups of symmetrical metal layer combinations, and determining the ratio of the capacitance difference value to the width difference value as the unit area capacitance of the metal layer structure represented by the symmetrical metal layer combination.
  6. 6. The method of claim 1, wherein the calculating the area capacitance components of the first metal layer and the second metal layer comprises: And calculating a width difference value between the projection overlapping width and a specified unit width, and determining a product between the unit surface capacitance and the width difference value as a surface capacitance component of the first metal layer and the second metal layer.
  7. 7. The method of claim 1 or 6, wherein calculating a capacitance value between the first metal layer and the second metal layer based on the combined capacitance of the face capacitance component and the sidewall offsets that match comprises: calculating a combined mean value capacitance according to the combined capacitance matched with the offset of each side wall; the sum of the combined mean capacitance and the face capacitance component is determined as a capacitance value between the first metal layer and the second metal layer.
  8. 8. A capacitance value extraction device, the device comprising: the combined capacitor query unit is used for determining a combined capacitor matched with each sidewall offset in a pre-generated capacitor query table based on the relative position relation between a first metal layer and a second metal layer, wherein the first metal layer is adjacent to the second metal layer; A plane capacitance component calculating unit configured to calculate plane capacitance components of the first metal layer and the second metal layer based on a preset unit plane capacitance and a projection overlap width between the first metal layer and the second metal layer; and the capacitance value calculating unit is used for calculating the capacitance value between the first metal layer and the second metal layer according to the combined capacitance of the face capacitance component and the offset of each side wall.
  9. 9. A computer device, characterized in that it comprises a memory and a processor, said memory being adapted to store a computer program, which, when executed by said processor, implements the method according to any of claims 1 to 7.
  10. 10. A computer program product comprising computer instructions for causing a computer to perform the method of any one of claims 1 to 7.

Description

Capacitance value extraction method, device and equipment Technical Field The present application relates to the field of integrated circuit design, and in particular, to a method, an apparatus, and a device for extracting a capacitance value. Background In the field of integrated circuit design, parasitic capacitance may introduce interference, signal delay or frequency response limitation in a circuit layout, and as a key influencing factor in the integrated circuit design, the accuracy and reliability of the integrated circuit design may be ensured by extracting the parasitic capacitance. In the related art, a mode matching mode is generally adopted for extracting parasitic capacitance, and a capacitance value can be directly determined by carrying out mode matching on a metal layer pattern and a pre-constructed mode library, but for a large-scale or complex integrated circuit, the mode matching needs to construct a quite abundant mode library, the consumed time of a matching process is long, and the capacitance extraction efficiency is reduced. In view of this, how to improve the extraction efficiency of the parasitic capacitance of the metal layer is the focus of current research in the field of integrated circuit design. Disclosure of Invention The application provides a method, a device and equipment for extracting capacitance values, which can improve the extraction efficiency of parasitic capacitance of a metal layer. The first aspect of the application provides a capacitance value extraction method, which comprises the steps of determining combined capacitance matched with each side wall offset in a pre-generated capacitance lookup table based on the relative position relation between a first metal layer and a second metal layer, wherein the side wall offset of one side wall of the two adjacent metal layers is characterized in that the offset of one metal layer and one side wall of the other metal layer on the side, calculating the face capacitance components of the first metal layer and the second metal layer based on the preset unit face capacitance and the projection overlapping width between the first metal layer and the second metal layer, and calculating the capacitance value between the first metal layer and the second metal layer according to the combined capacitance matched with the face capacitance components and the side wall offsets. The second aspect of the application also provides a device for extracting capacitance values, which comprises a combined capacitance query unit and a capacitance value calculation unit, wherein the combined capacitance query unit is used for determining combined capacitance matched with each side wall offset in a pre-generated capacitance query table based on the relative position relation between a first metal layer and a second metal layer, the first metal layer is adjacent to the second metal layer, the side wall offset is used for representing the offset of a group of side walls on the same side of the first metal layer and the second metal layer, the face capacitance component calculation unit is used for calculating the face capacitance components of the first metal layer and the second metal layer based on the preset unit face capacitance and the projection overlapping width between the first metal layer and the second metal layer, and the capacitance value calculation unit is used for calculating the capacitance values between the first metal layer and the second metal layer according to the combined capacitance matched with each side wall offset. The third aspect of the present application also provides a computer device comprising a memory and a processor, the memory being configured to store a computer program which, when executed by the processor, implements the method of extracting a capacitance value according to the first aspect. The fourth aspect of the application also provides a computer program product comprising computer instructions for causing a computer to perform the method of extracting a capacitance value according to the first aspect. According to the technical scheme provided by one or more embodiments of the application, the extraction efficiency of the parasitic capacitance of the metal layer can be improved through the matching mode of the capacitance lookup table. Specifically, the matched combined capacitance is determined in a capacitance lookup table according to the offset of the side wall, and after the face capacitance component is acquired, the capacitance value between the metal layers is determined according to the face capacitance component and the combined capacitance. In the related art, the capacitance value is generally determined in the capacitance lookup table according to a plurality of structural parameters of the metal layer combination, a large number of metal layer samples are required to be constructed in the capacitance lookup table for the metal layer combination with a relatively complex structure,