CN-122021513-A - Modeling method, tuning method and diagnosis method for RF circuit

Abstract

The invention provides a modeling method, a tuning method and a diagnosis method for an RF circuit, which can reflect the characteristics of an actual RF circuit to the maximum extent, and a substrate processing device comprising the RF circuit. A modeling method of an RF circuit for processing an RF signal in a substrate processing apparatus using plasma according to the present invention includes a step of constructing a modeled RF circuit such that a parasitic component and an error component of a constituent element of the RF circuit are included in a basic model composed of the constituent element, a step of obtaining a first frequency response of the modeled RF circuit and a second frequency response of the RF circuit, a step of comparing the first frequency response and the second frequency response to measure a data error, and a step of deciding the modeled RF circuit as a reference model of the RF circuit when the data error is within a reference range.

Inventors

• JIN SHIYUAN
• QUAN XIANGFAN

Assignees

• 细美事有限公司

Dates

Publication Date

20260512

Application Date

20250826

Priority Date

20241107

Claims (20)

1. 1. A modeling method of an RF circuit that processes an RF signal in a substrate processing apparatus using plasma, the modeling method comprising: A step of constructing an RF circuit modeled to include a parasitic component and an error component of the constituent elements in a basic model composed of the constituent elements of the RF circuit; A step of obtaining a first frequency response of the modeled RF circuit and a second frequency response of the RF circuit; A step of comparing the first frequency response and the second frequency response to determine a data error, and And deciding to use the modeled RF circuit as a reference model of the RF circuit when the data error is within a reference range.
2. 2. The modeling method of an RF circuit as claimed in claim 1, wherein, The step of constructing the modeled RF circuit includes: a step of adding a parasitic capacitor connected in parallel with the inductor in a basic model of the RF circuit, and A step of adding a parasitic inductor connected in series with a capacitor in a basic model of the RF circuit.
3. 3. The modeling method of an RF circuit as claimed in claim 1, wherein, The step of obtaining the first frequency response and the second frequency response comprises: determining a measurement frequency range including a minimum frequency value and a maximum frequency value; Determining the amount of data for which the frequency response is to be measured; a step of determining a value obtained by dividing the measurement frequency range by the data amount as a frequency resolution, and And determining the first frequency response and the second frequency response in the determination frequency range according to the frequency resolution.
4. 4. The modeling method of an RF circuit as claimed in claim 3, wherein, The step of determining the first frequency response and the second frequency response comprises: a step of measuring the reflection coefficient of the RF circuit and the modeled RF circuit, respectively, and And calculating the modeled RF circuit and the load impedance of the RF circuit based on the reflection coefficient and the characteristic impedance.
5. 5. The modeling method of an RF circuit as claimed in claim 1, wherein, The step of determining the data error comprises: a step of applying weights to the plurality of characteristic parameters in the first frequency response and the second frequency response, respectively, and And calculating the data error by comparing characteristic parameters to which the weight is applied.
6. 6. The modeling method of an RF circuit as claimed in claim 5, wherein, The characteristic parameter includes at least one of a magnitude of a load impedance in a frequency range, a minimum value of the load impedance, a number of the minimum values, a maximum value of the load impedance, and a number of the maximum values.
7. 7. The modeling method of an RF circuit as claimed in claim 1, wherein, The modeling method of the RF circuit further comprises the following steps: Displaying a frequency response map in which the first frequency response and the second frequency response overlap.
8. 8. A tuning method of an RF circuit that processes an RF signal in a substrate processing apparatus using plasma, the tuning method comprising: a step of generating a reference model for modeling the RF circuit; A step of obtaining simulation data using the reference model, and A step of adjusting characteristic values of constituent elements of the RF circuit based on the analog data, The step of generating the reference model comprises: A step of constructing an RF circuit modeled to include a parasitic component and an error component of the constituent element in a basic model composed of the constituent element of the RF circuit; A step of obtaining a first frequency response of the modeled RF circuit and a second frequency response of the RF circuit; A step of comparing the first frequency response and the second frequency response to determine a data error, and And deciding to use the modeled RF circuit as a reference model of the RF circuit when the data error is within a reference range.
9. 9. The method of tuning an RF circuit as claimed in claim 8, wherein, The step of constructing the modeled RF circuit includes: A step of adding parasitic capacitor to the inductor in the basic model of the RF circuit, and A step of adding parasitic inductors to the capacitors in a basic model of the RF circuit.
10. 10. The method of tuning an RF circuit as claimed in claim 8, wherein, The step of obtaining the first frequency response and the second frequency response comprises: determining a measurement frequency range including a minimum frequency value and a maximum frequency value; Determining the amount of data for which the frequency response is to be measured; a step of determining a value obtained by dividing the measurement frequency range by the data amount as a frequency resolution, and And determining the first frequency response and the second frequency response in the determination frequency range according to the frequency resolution.
11. 11. The method of tuning an RF circuit as claimed in claim 10, wherein, The step of determining the first frequency response and the second frequency response comprises: a step of measuring the reflection coefficient of the RF circuit and the modeled RF circuit, respectively, and And calculating the modeled RF circuit and the load impedance of the RF circuit based on the reflection coefficient and the characteristic impedance.
12. 12. The method of tuning an RF circuit as claimed in claim 8, wherein, The step of determining the data error comprises: a step of applying weights to the plurality of characteristic parameters in the first frequency response and the second frequency response, respectively, and And calculating the data error by comparing characteristic parameters to which the weight is applied.
13. 13. The method of tuning an RF circuit as claimed in claim 12, wherein, The characteristic parameter includes at least one of a magnitude of a load impedance in a frequency range, a minimum value of the load impedance, a number of the minimum values, a maximum value of the load impedance, and a number of the maximum values.
14. 14. The method of tuning an RF circuit as claimed in claim 8, wherein, The step of modeling the RF circuit further comprises: Displaying a frequency response map in which the first frequency response and the second frequency response overlap.
15. 15. A diagnostic method of an RF circuit that processes an RF signal in a substrate processing apparatus using plasma, the diagnostic method comprising: a step of generating a reference model for modeling the RF circuit; A step of obtaining simulation data using the reference model, and A step of confirming whether or not a new RF circuit installed in replacement of the RF circuit is abnormal based on the analog data, The step of generating the reference model comprises: A step of constructing an RF circuit modeled to include a parasitic component and an error component of the constituent elements in a basic model composed of the constituent elements of the RF circuit; A step of obtaining a first frequency response of the modeled RF circuit and a second frequency response of the RF circuit; A step of comparing the first frequency response and the second frequency response to determine a data error, and And deciding to use the modeled RF circuit as a reference model of the RF circuit when the data error is within a reference range.
16. 16. The method for diagnosing an RF circuit as claimed in claim 15, wherein, The step of confirming whether there is an abnormality in the new RF circuit includes: comparing the analog data with the frequency response of the new RF circuit to determine whether there is an abnormality in the new RF circuit.
17. 17. The method for diagnosing an RF circuit as claimed in claim 15, wherein, If the data of the specific section in the frequency response of the new RF circuit does not match the analog data, it is determined that there is an error in the constituent elements of the new RF circuit.
18. 18. The method for diagnosing an RF circuit as claimed in claim 15, wherein, The step of confirming whether there is an abnormality in the new RF circuit includes: And displaying a frequency response map in which the frequency response measured in the new RF circuit and the frequency response of the reference model overlap.
19. 19. The method for diagnosing an RF circuit as claimed in claim 15, wherein, The step of obtaining the first frequency response and the second frequency response comprises: determining a measurement frequency range including a minimum frequency value and a maximum frequency value; Determining the amount of data for which the frequency response is to be measured; a step of determining a value obtained by dividing the measurement frequency range by the data amount as a frequency resolution, and A step of measuring the first frequency response and the second frequency response in the measurement frequency range based on the frequency resolution, The step of determining the first frequency response and the second frequency response comprises: a step of measuring the reflection coefficient of the RF circuit and the modeled RF circuit, respectively, and And calculating the modeled RF circuit and the load impedance of the RF circuit based on the reflection coefficient and the characteristic impedance.
20. 20. The method for diagnosing an RF circuit as claimed in claim 15, wherein, The step of determining the data error comprises: a step of applying weights to the plurality of characteristic parameters in the first frequency response and the second frequency response, respectively, and A step of calculating the data error by comparing characteristic parameters to which the weights are applied, The characteristic parameter includes at least one of a magnitude of a load impedance in a frequency range, a minimum value of the load impedance, a number of the minimum values, a maximum value of the load impedance, and a number of the maximum values.

Description

Modeling method, tuning method and diagnosis method for RF circuit Technical Field The present invention relates to a modeling method, a tuning method, and a diagnostic method of an RF circuit that processes an RF (radio frequency) signal in a substrate processing apparatus using plasma. Background Semiconductor (or display) manufacturing processes as processes for manufacturing semiconductor products on a substrate (e.g., a wafer) include, for example, exposure, deposition, etching, ion implantation, cleaning, and the like. In order to perform each manufacturing process, a semiconductor manufacturing facility that performs each process is provided in a clean room of a semiconductor manufacturing factory, and a process treatment is performed on a substrate placed in the semiconductor manufacturing facility. Processes utilizing plasmas, such as etching, deposition, and the like, are widely used in semiconductor manufacturing processes. The plasma processing process is performed by placing a substrate in a lower portion in a plasma processing space, and applying an RF (radio frequency) signal through an electrode located in the upper portion or the lower portion together with a supply of a fluid for plasma processing. In order to form plasma in a desired form in a processing space, an RF circuit for converting an RF signal into an appropriate form is provided in a substrate processing apparatus. For example, the RF circuitry may include an RF filter and/or an impedance matching circuit coupled to the RF power source in order to allow maximum power to be transferred to the plasma. The RF circuit includes a plurality of impedance elements (e.g., inductors, capacitors) and other constituent elements (e.g., cables, rods (Rod), connectors), but the characteristics of the RF circuit are changed by the individual constituent elements. In order to effectively adjust the characteristic values of the respective constituent elements in the RF circuit, experiments using simulation are being used. Modeling of the RF circuit is required for simulation, but theoretical characteristics and actual characteristics of the RF circuit may be different, so that the RF circuit needs to be modeled so as to reflect the actual characteristics to the maximum. Disclosure of Invention The invention provides a modeling method and a tuning method of an RF circuit capable of reflecting characteristics of an actual RF circuit to the maximum, and a substrate processing apparatus including the RF circuit. A modeling method for an RF circuit for processing an RF signal in a substrate processing apparatus using plasma according to the present invention includes a step of constructing an RF circuit modeled to include a parasitic component and an error component of a constituent element of the RF circuit in a basic model composed of the constituent element, a step of obtaining a first frequency response of the modeled RF circuit and a second frequency response of the RF circuit, a step of comparing the first frequency response and the second frequency response to measure a data error, and a step of deciding the modeled RF circuit as a reference model of the RF circuit when the data error is within a reference range. In an embodiment of the invention, the step of constructing the modeled RF circuit includes the step of adding a parasitic capacitor connected in parallel with an inductor in a basic model of the RF circuit and the step of adding a parasitic inductor connected in series with a capacitor in the basic model of the RF circuit. In an embodiment of the present invention, the step of obtaining the first frequency response and the second frequency response may include a step of determining a measurement frequency range including a minimum frequency value and a maximum frequency value, a step of determining the number of data to measure the frequency response, a step of determining a value obtained by dividing the measurement frequency range by the number of data as a frequency resolution, and a step of measuring the first frequency response and the second frequency response in the measurement frequency range based on the frequency resolution. In an embodiment of the invention, the step of determining the first frequency response and the second frequency response comprises the steps of determining reflection coefficients for the modeled RF circuit and the RF circuit, respectively, and calculating load impedances for the modeled RF circuit and the RF circuit based on the reflection coefficients and the characteristic impedance. In an embodiment of the present invention, the step of measuring the data error may include a step of applying weights to a plurality of characteristic parameters in the first frequency response and the second frequency response, respectively, and a step of calculating the data error by comparing the characteristic parameters to which the weights are applied. In an embodiment of the present invention, the characteristic