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CN-122021532-A - System-level simulation method of L-band switch filter module

CN122021532ACN 122021532 ACN122021532 ACN 122021532ACN-122021532-A

Abstract

The invention discloses a system-level simulation method of an L-band switch filter module, which belongs to the technical field of radio frequency device simulation and comprises the steps of importing a module 2D layout into 3D electromagnetic simulation software to establish a module 3D model, performing single-channel cutting on the module 3D model in a plane cutting mode, reserving a target single channel, performing S parameter simulation according to the single channel, extracting insertion loss, input reflection coefficient and output reflection coefficient of the single channel, constructing a TDR simulation circuit in an ADS, positioning impedance discontinuity points, constructing a joint simulation circuit in the ADS, and performing S parameter joint simulation and verification. The invention realizes the cooperative analysis of the electromagnetic circuit, provides reliable support for the optimization of the module structure and the inhibition of ringing, and solves the technical problems of low simulation efficiency, inaccurate positioning of impedance discontinuity points and large deviation between simulation and actual measurement in the simulation of the existing L-band switch filter module.

Inventors

  • CHEN YAO
  • LIU TINGTING
  • GAO YANG

Assignees

  • 西南科技大学

Dates

Publication Date
20260512
Application Date
20260203

Claims (10)

  1. 1. The system-level simulation method of the L-band switch filter module is characterized by comprising the following steps of: s1, importing a module 2D layout into 3D electromagnetic simulation software to establish a module 3D model; S2, performing single-channel cutting on the module 3D model in a plane cutting mode, and reserving a target single channel; S3, performing S parameter simulation according to the single channel, and extracting insertion loss, input reflection coefficient and output reflection coefficient of the single channel; S4, constructing a TDR simulation circuit in the ADS, and positioning the impedance discontinuity points; s5, constructing a joint simulation circuit in the ADS, and performing S parameter joint simulation and verification.
  2. 2. The system-level simulation method of an L-band switch filter module according to claim 1, wherein S1 is specifically: S11, establishing a 3D model and setting parameters, namely introducing ANSYSHFSS a AltiumDesigner-drawn module 2D layout layer by layer, setting the height and thickness of each layer according to the laminated structure of the module, defining the substrate material as Ferro-A6M and the via hole and wire material as copper, ensuring the model size to be 13.6X13.6X11.41 mm and finishing electric connection integrity inspection; S12, port and excitation configuration, namely setting 12 lumped ports for each channel in a single-channel one-by-one simulation mode according to the port positions in the layout, setting a metal shell as an ideal electric wall, setting an open face as a radiation boundary, and enabling excitation signals to be sine waves with frequency coverage of 967-1215MHz and amplitude of 2.3V.
  3. 3. The system-level simulation method of an L-band switch filter module according to claim 2, wherein in S11, before the module 2D layout is introduced ANSYSHFSS layer by layer, a tech format layer information file is created, the layer name is kept consistent with the CAD layout, the unit is set to mm, and the layer color, height and thickness parameters are defined layer by layer.
  4. 4. A system-level simulation method of an L-band switch filter module according to claim 3, wherein in S12, the lumped port is arranged to ensure that the port edge is aligned with the upper and lower stacks of modules, and a ground plane matching the layer where the port is located is selected for the ground layer.
  5. 5. The system-level simulation method of an L-band switch filter module according to claim 1, wherein S2 is specifically: And carrying out plane cutting on the module 3D model through Boolean operation, reserving a target single channel, and enabling the distance between a cutting surface and a port to be more than or equal to 5mm for reducing simulation operation load.
  6. 6. The system-level simulation method of an L-band switch filter module according to claim 1, wherein S3 is specifically: s parameter simulation is carried out by adopting a terminal driving solver, an S12P format file is obtained, and the insertion loss, the input reflection coefficient and the output reflection coefficient of a single channel are imported into the ADS to extract.
  7. 7. The system-level simulation method of an L-band switch filter module according to claim 1, wherein S4 is specifically: setting up a TDR simulation circuit in an ADS, setting the rising time of a pulse source to be 0.005 mu s, the high level to be 2.3V, the low level to be 0V, the period to be 12.8 mu s and the simulation duration to be 20 mu s, calculating a reflection coefficient according to the amplitude of an incident signal and a reflection signal, further deriving the impedance to be measured of a reflection point, and determining the physical position of an impedance discontinuous point through a time difference, thereby obtaining the information of the impedance characteristic, the transmission loss and the signal delay of a transmission line.
  8. 8. The system-level simulation method of an L-band switch filter module as claimed in claim 7, wherein the reflection coefficient is calculated The expression of (2) is specifically: In the formula, In order to reflect the step pulse amplitude, Is the amplitude of the incident step pulse; Calculating impedance to be measured The expression of (2) is specifically: In the formula, Output impedance for the instrument; length of transmission line The expression of (2) is specifically: In the formula, To time from the signal to the point of reflection reaching the departure point, For the relative dielectric constant of the medium, Is the speed of light.
  9. 9. The system-level simulation method of an L-band switch filter module according to claim 1, wherein S5 is specifically: Building a joint simulation circuit containing S parameters of a switch, a filter and an interconnection structure in an ADS, setting 0.9-1.3GHz frequency band and 0.001GHz step length, comparing trend consistency of the joint simulation result and the TDR simulation result, manufacturing a module physical prototype, measuring the S parameters through a vector network analyzer, and verifying accuracy of the simulation model.
  10. 10. The system-level simulation method of the L-band switch filter module according to claim 9, wherein in S5, the environment condition of the simulation model is verified to be 25 ℃ and 50% of humidity, 4 typical channels with center frequencies 967MHz, 1090MHz, 1159MHz and 1215MHz are selected for comparison, the insertion loss deviation is less than or equal to 0.3dB, and the reflection coefficient deviation is less than or equal to 0.5dB, and the simulation model is considered to be effective.

Description

System-level simulation method of L-band switch filter module Technical Field The invention belongs to the technical field of radio frequency device simulation, and particularly relates to a system-level simulation method of an L-band switch filter module. Background The L-band switch filter module is used as a core device in the fields of satellite navigation, airborne communication, internet of things and the like, 16-channel switching in 967-1215MHz frequency band is needed, and the performance of the L-band switch filter module directly determines the purity and the working stability of system signals. The traditional 3D electromagnetic simulation method has the following problems that the traditional 3D electromagnetic simulation is not optimized for a multichannel structure, single-channel simulation time is 8 hours, research and development efficiency is low, accurate impedance discontinuity point positioning means are lacked, impedance mutation at positions such as microstrip lines, vertical interconnection through holes, gold wire bonding and the like cannot be effectively identified, ringing phenomenon suppression is difficult, electromagnetic simulation and circuit simulation are disjointed, the cooperative action of a switch, a filter and an interconnection structure is not considered, simulation and actual measurement deviation is larger than 0.5dB, and engineering design is difficult to guide. In the prior art, although part of researches adopt HFSS or ADS single tools for simulation, a complete process of '3D electromagnetic modeling-single channel optimization-impedance positioning-joint simulation-actual measurement verification' is not formed, simulation efficiency and precision cannot be considered, and shortening of module research and development period and performance improvement are restricted. Therefore, a high-efficiency and accurate system-level simulation method is needed to solve the difficulty of simulation optimization of the multi-channel LTCC switch filter module. Disclosure of Invention Aiming at the defects in the prior art, the system-level simulation method of the L-band switch filter module provided by the invention solves the problems of low simulation efficiency, inaccurate positioning of impedance discontinuity points and large deviation between simulation and actual measurement in the simulation of the existing L-band switch filter module. In order to achieve the aim of the invention, the technical scheme adopted by the invention is that the system-level simulation method of the L-band switch filter module comprises the following steps: s1, importing a module 2D layout into 3D electromagnetic simulation software to establish a module 3D model; S2, performing single-channel cutting on the module 3D model in a plane cutting mode, and reserving a target single channel; S3, performing S parameter simulation according to the single channel, and extracting insertion loss, input reflection coefficient and output reflection coefficient of the single channel; S4, constructing a TDR simulation circuit in the ADS, and positioning the impedance discontinuity points; s5, constructing a joint simulation circuit in the ADS, and performing S parameter joint simulation and verification. Further, S1 is specifically as follows: S11, establishing a 3D model and setting parameters, namely introducing ANSYSHFSS a AltiumDesigner-drawn module 2D layout layer by layer, setting the height and thickness of each layer according to the laminated structure of the module, defining the substrate material as Ferro-A6M and the via hole and wire material as copper, ensuring the model size to be 13.6X13.6X11.41 mm and finishing electric connection integrity inspection; S12, port and excitation configuration, namely setting 12 lumped ports for each channel in a single-channel one-by-one simulation mode according to the port positions in the layout, setting a metal shell as an ideal electric wall, setting an open face as a radiation boundary, and enabling excitation signals to be sine waves with frequency coverage of 967-1215MHz and amplitude of 2.3V. Further, in S11, before the module 2D layout is imported ANSYSHFSS layer by layer, a tech format layer information file is created, the layer name is consistent with the CAD layout, the unit is set to be mm, and the layer color, height and thickness parameters are defined layer by layer. Further, in S12, the lumped port is arranged to ensure that the port edge is aligned with the upper and lower stacks of modules, and a ground plane matched with the layer where the port is located is selected for the stratum. Further, the S2 specifically comprises the following steps: And carrying out plane cutting on the module 3D model through Boolean operation, reserving a target single channel, and enabling the distance between a cutting surface and a port to be more than or equal to 5mm for reducing simulation operation load. The method has the beneficial effects that