CN-122021956-A - Pattern direct writing method and device for silicon-based atomic-level quantum device

CN122021956ACN 122021956 ACN122021956 ACN 122021956ACN-122021956-A

Abstract

The invention relates to the technical field of quantum chip manufacturing, in particular to a pattern direct writing method and device of a silicon-based atomic-level quantum device. The invention firstly calculates the peristaltic compensation coefficient needed for eliminating the peristaltic effect, and then adopts the peristaltic compensation coefficient to control the actual direct writing position of the needle point on the silicon substrate in the direct process of the needle point so as to form a device pattern on the silicon substrate. In conclusion, the invention can improve the accuracy of direct writing of the needle tip.

Inventors

Duan Mingchao
LIU JIAZE
WU KUNRONG
Pan Tianluo
WANG GUANYONG
HE YU

Assignees

深圳国际量子研究院
合肥国家实验室

Dates

Publication Date: 20260512
Application Date: 20251223

Claims (8)

1. The pattern direct writing method of the silicon-based atomic-level quantum device based on STM is characterized by comprising the following steps of: Placing a silicon substrate covered with a hydrogen mask in an STM; calculating a peristaltic compensation coefficient required by the needle tip of the STM to execute direct writing on the silicon substrate covered with the hydrogen mask, wherein the peristaltic compensation coefficient is used for eliminating direct writing position errors generated by a peristaltic effect when the needle tip is used for direct writing; and controlling the needle tip to perform direct writing on the silicon substrate covered with the hydrogen mask according to the creep compensation coefficient so as to form a device pattern on the silicon substrate.
2. A method of patterning direct writing an STM-based silicon-based atomic-scale quantum device as recited in claim 1, wherein the hydrogen mask is formed by a method comprising: carrying out rapid annealing process treatment on the silicon substrate in a single crystal form in a vacuum environment, so that an atomic-level step morphology is formed on the surface of the silicon substrate; The dangling bonds of the silicon substrate surface are passivated with atomic hydrogen to form the hydrogen mask.
3. A method of pattern direct writing of STM-based silicon-based atomic-scale quantum devices as claimed in claim 1, wherein calculating a creep compensation factor required for a tip of the STM to perform direct writing on the silicon substrate covered with the hydrogen mask comprises: setting a direct writing area corresponding to the device graph, wherein the direct writing area is an area, which needs to be etched, of the needle point on the silicon substrate covered with the hydrogen mask; dividing the write-through area into a plurality of cells; Acquiring the column number and the line number of each cell, wherein the column number is distributed transversely along the built-in coordinate system of the STM, and the line number is distributed longitudinally along the built-in coordinate system of the STM; determining a compensation coefficient required by the needle tip in the longitudinal direction when the needle tip directly writes the cell according to the number of lines of each cell, and marking the compensation coefficient as a longitudinal compensation coefficient; And determining a compensation coefficient required by the needle tip in the transverse direction when the needle tip directly writes the cell according to the column number and the row number of each cell, marking the compensation coefficient as a transverse compensation coefficient, and taking the longitudinal compensation coefficient and the transverse compensation coefficient as peristaltic compensation coefficients.
4. A method of pattern direct writing of STM-based silicon-based atomic-scale quantum devices as claimed in claim 3, wherein determining a compensation factor required in the longitudinal direction for the tip to write through each of the cells, based on the number of rows in which the cell is located, is denoted as a longitudinal compensation factor, comprises: When the number of lines of the cell is smaller than a set number of lines, nonlinear compensation is applied to the number of lines of the cell, and a compensation coefficient required in the longitudinal direction when the needle point directly writes the cell is obtained; Or when the number of lines of the cell is larger than the set number of lines, applying linear compensation to the number of lines of the cell to obtain a compensation coefficient required in the longitudinal direction when the needle tip directly writes the cell.
5. A method of pattern direct writing of STM-based silicon-based atomic-scale quantum devices as claimed in claim 3, wherein determining the compensation factor required in the lateral direction for the tip to directly write each of the cells based on the number of columns and the number of rows in which the cell is located comprises: And applying linear compensation to the column number, applying nonlinear compensation to the row number, and determining a compensation coefficient required in the transverse direction when the needle tip directly writes the cell according to the result of the linear compensation and the result of the nonlinear compensation.
6. A STM-based silicon-based atomic-scale quantum device pattern direct writing method as recited in claim 3, wherein controlling the needle tip to direct write on the silicon substrate covered with the hydrogen mask in accordance with the creep compensation coefficient to form a device pattern on the silicon substrate comprises: Determining a position to be pointed to by the needle tip when the needle tip directly writes the cell without considering peristaltic effect according to the column number and the row number of each cell, wherein the position comprises an abscissa in the transverse direction and an ordinate in the longitudinal direction; Determining an actual ordinate when the needle tip directly writes the cell according to the longitudinal compensation coefficient and the ordinate; determining an actual abscissa when the needle tip directly writes the cell according to the transverse compensation coefficient and the abscissa; And controlling the needle tip to directly write on the silicon substrate covered with the hydrogen mask according to the actual ordinate and the actual abscissa so as to form a device pattern on the silicon substrate.
7. A STM-based silicon-based atomic-scale quantum device pattern direct writing method as recited in claim 6, wherein controlling the needle tip to direct write on the silicon substrate covered with the hydrogen mask in the actual ordinate and the actual abscissa to form a device pattern on the silicon substrate comprises: And starting the needle point of the STM, keeping the needle point in an idling state, and then controlling the needle point to perform direct writing on the silicon substrate covered with the hydrogen mask according to the actual ordinate and the actual abscissa so as to form a device pattern on the silicon substrate.
8. An STM-based pattern direct writing device of a silicon-based atomic-level quantum device is characterized by comprising the following components: The hydrogen mask covering module is used for preparing a silicon substrate covered with a hydrogen mask and placing the silicon substrate in an STM; The peristaltic compensation coefficient calculation module is used for calculating a peristaltic compensation coefficient required by the direct writing of the needle point of the STM on the silicon substrate covered with the hydrogen mask, and the peristaltic compensation coefficient is used for eliminating a direct writing position error generated by a peristaltic effect when the needle point is used for direct writing; And the control module is used for controlling the needle tip to perform direct writing on the silicon substrate covered with the hydrogen mask according to the peristaltic compensation coefficient so as to form a device pattern on the silicon substrate.

Description

Pattern direct writing method and device for silicon-based atomic-level quantum device Technical Field The invention relates to the technical field of quantum chip manufacturing, in particular to a pattern direct writing method and device of a silicon-based atomic-level quantum device. Background Silicon-based quantum computing technology is to construct programmable spin qubit arrays using silicon-based quantum dots. The carrier of its spin is a single electron or hole trapped in the quantum dot and the nucleus of the atoms that make up the quantum dot. The qubits in the array may be driven by electrical pulses or coupled to achieve quantum computing operations. At present, two development routes of silicon-based quantum computation are available, one is a quantum dot system defined by a gate electrode, and the two types of materials can be classified into Si-MOS and SiGe, namely, multiple layers of electrodes are written on a silicon or silicon-germanium substrate through electron beam lithography, so that electrons around the quantum dot are emptied, and single electron spin quantum states in the quantum dot are controlled by the electrodes. Another method is a silicon-based monoatomic system, which can perform direct writing of device patterns (pattern direct writing and immediate etching of patterns) through a scanning tunneling microscope (Scanning Tunneling Microscope, STM), and form high-concentration doping in a direct writing area so as to form quantum dots and control electrodes. The STM doping technology relates to the needle tip direct writing technology of STM, and when the needle tip of the STM executes pattern direct writing (the pattern direct writing instantly etches out the pattern), the accuracy of the pattern direct writing can be reduced due to the peristaltic effect of the needle tip, and the prior art does not consider the peristaltic effect, so that the direct writing accuracy is affected. Accordingly, there is a need for improvement and advancement in the art. Disclosure of Invention In order to solve the technical problems, the invention provides a graph direct writing method and device of a silicon-based atomic-level quantum device, and solves the problem that the direct writing precision is affected because peristaltic effect is not considered in the prior art. In order to achieve the above purpose, the present invention adopts the following technical scheme: In a first aspect, the present invention provides a method for direct writing of patterns in a silicon-based atomic-scale quantum device based on STM, comprising: Placing a silicon substrate covered with a hydrogen mask in an STM; calculating a peristaltic compensation coefficient required by the needle tip of the STM to execute direct writing on the silicon substrate covered with the hydrogen mask, wherein the peristaltic compensation coefficient is used for eliminating direct writing position errors generated by a peristaltic effect when the needle tip is used for direct writing; and controlling the needle tip to perform direct writing on the silicon substrate covered with the hydrogen mask according to the creep compensation coefficient so as to form a device pattern on the silicon substrate. In one implementation, the forming method of the hydrogen mask includes: carrying out rapid annealing process treatment on the silicon substrate in a single crystal form in a vacuum environment, so that an atomic-level step morphology is formed on the surface of the silicon substrate; The dangling bonds of the silicon substrate surface are passivated with atomic hydrogen to form the hydrogen mask. In one implementation, calculating a creep compensation coefficient required for a tip of the STM to perform direct writing on the silicon substrate covered with the hydrogen mask includes: setting a direct writing area corresponding to the device graph, wherein the direct writing area is an area, which needs to be etched, of the needle point on the silicon substrate covered with the hydrogen mask; dividing the write-through area into a plurality of cells; Acquiring the column number and the line number of each cell, wherein the column number is distributed transversely along the built-in coordinate system of the STM, and the line number is distributed longitudinally along the built-in coordinate system of the STM; determining a compensation coefficient required by the needle tip in the longitudinal direction when the needle tip directly writes the cell according to the number of lines of each cell, and marking the compensation coefficient as a longitudinal compensation coefficient; And determining a compensation coefficient required by the needle tip in the transverse direction when the needle tip directly writes the cell according to the column number and the row number of each cell, marking the compensation coefficient as a transverse compensation coefficient, and taking the longitudinal compensation coefficient and the transverse compe