CN-122021959-A - Superconducting quantum computing chip and preparation method thereof

CN122021959ACN 122021959 ACN122021959 ACN 122021959ACN-122021959-A

Abstract

The application discloses a superconducting quantum computing chip and a preparation method thereof. And a first type thermometer is arranged inside the superconducting quantum computing chip. According to the application, the first type of thermometer is prepared near the superconducting quantum bit through the superconducting quantum computing chip technology, so that the temperature fluctuation of a corresponding bit area can be monitored in situ in real time, the real-time change of the temperature distribution on the whole chip is further obtained, and a core technical support is provided for the thermal management of a large-scale quantum processor.

Inventors

MI ZHENYU
MA YANJUN
CHEN MO
LIANG XUEHUI
FENG YAQING
YU HAIFENG

Assignees

北京量子信息科学研究院

Dates

Publication Date: 20260512
Application Date: 20251219

Claims (10)

1. The superconducting quantum computing chip is characterized in that a first type thermometer is arranged inside the superconducting quantum computing chip.
2. The superconducting quantum computing chip of claim 1, wherein the superconducting quantum computing chip comprises: A substrate; A plurality of superconducting qubits periodically arranged on the first surface of the substrate; a plurality of first-type thermometers respectively arranged corresponding to each of the superconducting qubits.
3. The superconducting quantum computing chip of claim 2, wherein the substrate is selected from the group consisting of a sapphire substrate and a high-resistance silicon substrate; the thickness of the substrate is 0.4-0.5 mm.
4. The superconducting quantum computing chip of claim 2, wherein each superconducting qubit comprises two superconducting metal units and a superconducting josephson junction connecting the two superconducting metal units.
5. The superconducting quantum computing chip of claim 4, wherein the material of the superconducting metal unit is selected from one of aluminum, niobium and tantalum; the thickness of each superconducting metal film is 100-300 nm.
6. The superconducting quantum computing chip of claim 4, wherein the josephson junction is a sandwich structure consisting of a first aluminum film layer/a first aluminum oxide layer/a second aluminum film layer; the thickness of the first aluminum film layer is 10-100 nm; The thickness of the first aluminum oxide layer is 1-5 nm; The thickness of the second aluminum film layer is 20-200 nm.
7. The superconducting quantum computing chip according to any one of claims 1 to 6, wherein the first type of temperature is a sandwich structure formed by a third aluminum film layer/a second aluminum oxide layer/a non-superconducting metal layer; the non-superconducting metal is selected from one of copper, gold and silver; the thickness of the third aluminum film layer is 10-100 nm; The thickness of the second aluminum oxide layer is 1-5 nm; the thickness of the non-superconducting metal layer is 20-200 nm.
8. A method of fabricating a superconducting quantum computing chip according to any one of claims 1 to 7, comprising: Preparing a superconducting metal film layer on the first surface of a substrate, spin-coating first photoresist on the surface of the superconducting metal film layer, preparing and forming a first photoresist pattern, and etching the first photoresist pattern to form a plurality of superconducting metal units which are periodically arranged; Spin-coating a second photoresist, a third photoresist and a fourth photoresist on the surface of the superconducting metal film layer to prepare and form a second photoresist pattern; preparing a first aluminum film layer on the surface of the second photoresist pattern, oxidizing the surface of the first aluminum film layer to obtain a first aluminum oxide layer, preparing a second aluminum film layer on the surface of the first aluminum oxide layer, stripping the second photoresist, the third photoresist and the fourth photoresist to obtain a Josephson junction; Spin-coating a fifth photoresist, a sixth photoresist and a seventh photoresist on the surface of the superconducting metal film layer with the Josephson junction to prepare and form a third photoresist pattern; Preparing a third aluminum film layer on the surface of the third photoresist pattern, oxidizing the surface of the third aluminum film layer to obtain a second aluminum oxide layer, preparing a non-superconducting metal layer on the surface of the second aluminum oxide layer, stripping the fifth photoresist, the sixth photoresist and the seventh photoresist to obtain a plurality of first-type thermometers corresponding to the periodically arranged superconducting metal units, and preparing the superconducting quantum computing chip.
9. The method of preparing according to claim 8, wherein the preparing further comprises: and packaging the superconducting quantum computing chip.
10. The method of manufacturing according to claim 8, characterized in that the distance between the edge of the first type of thermometer and the centre of the josephson junction is at most 5mm and at least 1mm.

Description

Superconducting quantum computing chip and preparation method thereof Technical Field The application relates to the technical field of superconducting quantum computing, in particular to a superconducting quantum computing chip and a preparation method thereof. Background Quantum computing has become an important development direction of leading edge computing technology because of its potential advantages in the fields of cryptanalysis, material simulation, drug design, etc. Superconducting qubits (Transmon, fluxonium, etc.) are a macroscopic quantum system of artificial quantum two energy levels constructed based on superconducting circuits. The core physical principle is that nonlinear elements such as Josephson junctions (Josephson Junction) are utilized to enable a circuit system to generate non-equidistant quantized energy levels (non-harmonicity), so that the lowest two energy levels are allowed to be selectively used as calculation ground states (0 and 1) for coherent manipulation. The superconducting qubit is used as a core unit of superconducting quantum computing and needs to operate in an extremely low-temperature (about 10-20 mK) environment. Temperature fluctuations can significantly affect the coherence time (T1/T2), energy level spacing, and quantum gate operational fidelity of the qubit. Therefore, real-time monitoring of the temperature of the qubit core region is a key to guaranteeing the stability of the quantum processor. In the prior art, on the premise of not interfering the running of the quantum bit, the in-situ, high spatial resolution, real-time and accurate temperature monitoring is difficult to realize. With the development of superconducting quantum chips to kilobit scale, a low-noise temperature sensing scheme compatible with a quantum bit process and capable of being integrated on the same chip is needed to optimize the regulation and control of a refrigeration system, locate a thermal fault point and improve the quantum error correction efficiency. Disclosure of Invention In order to solve the above-mentioned shortcomings in the art, the present application aims to provide a superconducting quantum computing chip and a preparation method thereof. According to an aspect of the present application, there is provided a superconducting quantum computing chip having a first type of thermometer disposed therein. According to some embodiments of the application, a superconducting quantum computing chip includes: A substrate; A plurality of superconducting qubits periodically arranged on the first surface of the substrate; a plurality of first-type thermometers are arranged respectively corresponding to each superconducting qubit. According to some embodiments of the application, the substrate is selected from a sapphire substrate or a high-resistance silicon substrate; The thickness of the substrate is 0.4-0.5 mm. According to some embodiments of the application, each superconducting qubit comprises two superconducting metal units and a superconducting josephson junction connecting the two superconducting metal units. According to some embodiments of the application, the material of the superconducting metal unit is selected from one of aluminum, niobium, tantalum; the thickness of each superconducting metal film is 100-300 nm. According to some embodiments of the application, the josephson junction is a sandwich structure consisting of a first aluminum film layer/a first aluminum oxide layer/a second aluminum film layer; the thickness of the first aluminum film layer is 10-100 nm. The thickness of the first alumina layer is 1-5 nm. The thickness of the second aluminum film layer is 20-200 nm. According to some embodiments of the application, the first type of temperature is a sandwich structure formed by a third aluminum film layer/a second aluminum oxide layer/a non-superconducting metal layer; The non-superconducting metal is selected from one of copper, gold and silver; the thickness of the third aluminum film layer is 10-100 nm. The thickness of the second aluminum oxide layer is 1-5 nm. The thickness of the non-superconducting metal layer is 20-200 nm. According to another aspect of the present application, there is also provided a method for manufacturing the superconducting quantum computing chip, including: Preparing a superconducting metal film layer on the first surface of the substrate, spin-coating first photoresist on the surface of the superconducting metal film layer, preparing and forming a first photoresist pattern, and etching the first photoresist pattern to form a plurality of superconducting metal units which are periodically arranged; spin-coating a second photoresist, a third photoresist and a fourth photoresist on the surface of the superconducting metal film layer to prepare and form a second photoresist pattern; Preparing a first aluminum film layer on the surface of the second photoresist pattern, oxidizing the surface of the first aluminum film layer t