CN-122024626-A - Noise reduction circuit and gate driving circuit

Abstract

The application belongs to the technical field of display, and particularly relates to a noise reduction circuit and a grid driving circuit, wherein a noise reduction control unit outputs noise reduction control signals to noise reduction control nodes, a noise reduction pull-down unit is respectively connected with a level transmission output end of an n-i level grid driving module and the noise reduction control nodes, and is used for pulling down the voltage of the noise reduction control nodes in response to the level transmission signals output by the n-i level grid driving module, a noise reduction compensation unit is respectively connected with the level transmission output end of an n+j level grid driving module and the noise reduction control nodes, is used for compensating the noise reduction control signals on the noise reduction control nodes in response to the level transmission signals output by the n+j level grid driving module, and a noise reduction execution unit is used for reducing the voltages on a driving control node, a driving output end and a level transmission output end in response to the noise reduction control signals after being compensated on the noise reduction control nodes. According to the application, through the matching design between the pull-down unit and the compensation unit, the unstable noise reduction function of the transistor caused by threshold drift is improved.

Inventors

• ZHU XIANFEI
• XU PEI

Assignees

• 惠科股份有限公司

Dates

Publication Date

20260512

Application Date

20260407

Claims (10)

1. 1. A noise reduction circuit, characterized in that it is applied to a gate driving circuit, the gate driving circuit includes N cascaded gate driving modules, and an nth stage gate driving module includes at least a driving control node, a driving output terminal, a stage transmission output terminal, and a noise reduction circuit having a noise reduction control node, the noise reduction circuit includes: The noise reduction control unit is connected with the noise reduction control node and is configured to output a noise reduction control signal to the noise reduction control node at the non-scanning time of the scanning stage of the current-stage grid driving module; The noise reduction pull-down unit is respectively connected with the level transmission output end of the n-i level grid driving module and the noise reduction control node and is configured to respond to the level transmission signal output by the n-i level grid driving module and pull down the voltage of the noise reduction control node; The noise reduction compensation unit is respectively connected with the level transmission output end of the n+j level grid driving module and the noise reduction control node and is configured to respond to the level transmission signal output by the n+j level grid driving module to compensate the noise reduction control signal on the noise reduction control node; and the noise reduction execution unit is respectively connected with the noise reduction control node, the driving control node and the driving output end and is configured to reduce the noise of the voltages on the driving control node, the driving output end and the stage transmission output end in response to the noise reduction control signal compensated on the noise reduction control node.
2. 2. The noise reduction circuit of claim 1, wherein the noise reduction pull-down unit comprises: The control end of the first transistor is connected with the level transmission output end of the n-i level grid driving module, the first end of the first transistor is connected with the low level end, and the second end of the first transistor is connected with the noise reduction control node.
3. 3. The noise reduction circuit of claim 1, wherein the noise reduction pull-down unit comprises a first transistor and a second transistor; The control end of the first transistor is connected with the level transmission output end of the n-i-th level grid driving module, and the first end of the first transistor is connected with the low level end; The control end of the second transistor is connected with the level transmission output end of the n-i level grid driving module, the first end of the second transistor is connected with the second end of the first transistor, and the second end of the second transistor is connected with the noise reduction control node.
4. 4. A noise reduction circuit according to any one of claims 1-3, wherein the noise reduction compensation unit comprises a third transistor; The control end of the third transistor is connected with the level transmission output end of the n+j level grid electrode driving module, the first end of the third transistor is connected with the compensation end, and the second end of the third transistor is connected with the noise reduction control node.
5. 5. A noise reduction circuit according to any one of claims 1 to 3, wherein the noise reduction compensation unit further comprises a third transistor and a fourth transistor; the control end of the third transistor is connected with the level transmission output end of the n+j level grid driving module, and the first end of the third transistor is connected with the compensation end; The control end of the fourth transistor is connected with the level transmission output end of the n+j level grid driving module, the first end of the fourth transistor is connected with the second end of the third transistor, and the second end of the fourth transistor is connected with the noise reduction control node.
6. 6. The noise reduction circuit of claim 1, wherein the noise reduction pull-down unit comprises a fifth transistor, a first capacitor, and a sixth transistor; the control end of the fifth transistor is connected with the level transmission output end of the n-i level grid driving module, and the first end of the fifth transistor is connected with the compensation end; the control end of the sixth transistor is connected with the second end of the fifth transistor, the first end of the sixth transistor is connected with the low level end, and the second end of the sixth transistor is connected with the noise reduction control node; The first end of the first capacitor is connected with the level transmission output end of the n-i level grid driving module, and the second end of the first capacitor is connected with the second end of the fifth transistor.
7. 7. The noise reduction circuit of claim 6, wherein the noise reduction pull-down unit further comprises a seventh transistor and an eighth transistor; the control end of the seventh transistor is connected with the level transmission output end of the n-i level grid driving module, and the first end of the seventh transistor is connected with the level transmission output end of the n-i level grid driving module; The control end of the eighth transistor is connected with the second end of the seventh transistor, the first end of the eighth transistor is connected with the level transmission output end of the n-i level grid driving module, and the second end of the eighth transistor is connected with the control end of the fifth transistor.
8. 8. The noise reduction circuit according to claim 6 or 7, wherein the noise reduction compensation unit includes a ninth transistor, a second capacitor, and a tenth transistor; The control end of the ninth transistor is connected with the level transmission output end of the n+j level grid driving module, the first end of the ninth transistor is connected with the compensation end, and the second end of the ninth transistor is connected with the noise reduction control node; The control end of the tenth transistor is connected with the second end of the ninth transistor, the first end of the tenth transistor is connected with the low level end, and the second end of the tenth transistor is connected with the second end of the sixth transistor; the first end of the second capacitor is connected with the level transmission output end of the n+j level grid driving module, and the second end of the second capacitor is connected with the second end of the ninth transistor.
9. 9. The noise reduction circuit according to claim 8, wherein the noise reduction compensation unit further includes an eleventh transistor and a twelfth transistor; The control end of the eleventh transistor is connected with the level transmission output end of the n+j-th level grid driving module, and the first end of the eleventh transistor is connected with the level transmission output end of the n+j-th level grid driving module; The control end of the twelfth transistor is connected with the second end of the eleventh transistor, the first end of the twelfth transistor is connected with the level transmission output end of the n+j level grid driving module, and the second end of the twelfth transistor is connected with the control end of the ninth transistor.
10. 10. A gate driving circuit comprising N cascaded gate driving modules, wherein an nth stage gate driving module comprises: the pull-up unit is respectively connected with the driving output end of the n-i stage grid driving module and the level transmission output end of the n-i stage grid driving module; The pull-down unit is connected with the level transmission output end of the n+j level grid driving module and is also connected with the pull-up unit through a driving control node; The output unit is respectively connected with the clock signal end and the driving control node; the noise reduction circuit of any of claims 1-9, connected to a drive control node, a drive output and a stage transfer output of a current stage gate drive module, respectively.

Description

Noise reduction circuit and gate driving circuit Technical Field The application belongs to the technical field of display, and particularly relates to a noise reduction circuit and a grid driving circuit. Background GDL (Gate Driver Less) is a technology for integrating a Gate driving circuit on a display panel, and by using the existing amorphous silicon (a-Si) TFT technology of the panel, the shift register function which is originally needed to be realized by an external Gate driving chip (Gate IC) is directly manufactured on an array substrate, so that the external Gate driving chip is omitted, and the effects of reducing cost, simplifying manufacturing process and reducing frame are achieved. The progressive scanning of the panel is realized through a GOA (GATE DRIVER on Array) unit, and the noise reduction circuit carries out noise reduction processing on the output signals of all nodes in the GOA unit for a long time. The transistors in the noise reduction circuit are in a forward bias state for a long time, and the corresponding threshold voltages of the transistors drift, so that the working capacity of the noise reduction circuit is reduced, and the level transmission stability and the display effect of the panel are affected. Therefore, how to improve the unstable noise reduction function caused by the threshold drift of the transistor is a problem to be solved in the present application. Disclosure of Invention The application provides a noise reduction circuit and a grid driving circuit, which are used for improving unstable noise reduction function caused by transistor threshold drift. In a first aspect, the present application provides a noise reduction circuit applied to a gate driving circuit, the gate driving circuit including N cascaded gate driving modules, an nth stage gate driving module including at least a driving control node, a driving output terminal, a stage transmission output terminal, and a noise reduction circuit having a noise reduction control node, the noise reduction circuit including: the noise reduction control unit is connected with the noise reduction control node and is configured to output a noise reduction control signal to the noise reduction control node at the non-scanning time of the scanning stage of the current-stage grid driving module; the noise reduction pull-down unit is respectively connected with the level transmission output end of the n-i level grid driving module and the noise reduction control node and is configured to respond to the level transmission signal output by the n-i level grid driving module and pull down the voltage of the noise reduction control node; the noise reduction compensation unit is respectively connected with the level transmission output end of the n+j level grid driving module and the noise reduction control node and is configured to respond to the level transmission signal output by the n+j level grid driving module to compensate the noise reduction control signal on the noise reduction control node; And the noise reduction execution unit is respectively connected with the noise reduction control node, the driving control node and the driving output end and is configured to respond to the noise reduction control signal compensated on the noise reduction control node to reduce the noise of the voltages on the driving control node, the driving output end and the stage transmission output end. Optionally, the noise reduction pull-down unit includes: And the control end of the first transistor is connected with the level transmission output end of the n-i-th level grid driving module, the first end of the first transistor is connected with the low level end, and the second end of the first transistor is connected with the noise reduction control node. Optionally, the noise reduction pull-down unit comprises a first transistor and a second transistor; The control end of the first transistor is connected with the level transmission output end of the n-i level gate driving module, and the first end of the first transistor is connected with the low level end; The control end of the second transistor is connected with the level transmission output end of the n-i level grid driving module, the first end of the second transistor is connected with the second end of the first transistor, and the second end of the second transistor is connected with the noise reduction control node. Optionally, the noise reduction compensation unit includes a third transistor; the control end of the third transistor is connected with the level transmission output end of the n+j level grid electrode driving module, the first end of the third transistor is connected with the compensation end, and the second end of the third transistor is connected with the noise reduction control node. Optionally, the noise reduction compensation unit further comprises a third transistor and a fourth transistor; The control end of the third transistor is connected with th