CN-122024651-A - Pixel driving circuit and display device

CN122024651ACN 122024651 ACN122024651 ACN 122024651ACN-122024651-A

Abstract

The invention discloses a pixel driving circuit and a display device, which comprise a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a seventh transistor, a eighth transistor, a third reference voltage, a ninth transistor, a fourth transistor, a tenth transistor, a third capacitor and a third capacitor, wherein the first transistor is used for switching between a data signal and the third node, the second transistor is used for switching between the first node and the third node, the fifth transistor is used for switching between the third node and a light emitting diode, the sixth transistor is used for switching between the first reference voltage and the second node, the seventh transistor is used for switching between the second reference voltage and the light emitting diode, the eighth transistor is used for switching between the third reference voltage and the first node, the ninth transistor is used for switching between the fourth reference voltage and the third node, the tenth transistor is used for switching between the working voltage signal and the third node, and the first capacitor is coupled between the second node and the third node, so that charging time is compensated, and the display effect is more uniform.

Inventors

LIU JIE
ZHANG HAN
ZENG YINGXIANG

Assignees

上海和辉光电股份有限公司

Dates

Publication Date: 20260512
Application Date: 20241111

Claims (10)

1. A pixel driving circuit, comprising: a first transistor (T1) for switching a current path between the Data signal (Data) and the third node (N3) in response to a first control signal (sn_t1); A second transistor (T2) for switching a current path between the first node (N1) and the third node (N3) in response to a voltage of the second node (N2); A third transistor (T3) for switching a current path between the second node (N2) and a third node (N3) in response to a second control signal (sn_t3); A fourth transistor (T4) for switching a current path between the operating voltage signal (ELVDD) and the first node (N1) in response to the first enable signal (em_t4); A fifth transistor (T5) for switching a current path between the third node (N3) and an anode of a Light Emitting Diode (LED), a cathode of which is connected to a ground signal (ELVSS), in response to a second enable signal (em_t5); a sixth transistor (T6) for switching a current path between the first reference voltage (Vint 1) and the second node (N2) in response to the scan signal (SN-1); A seventh transistor (T7) for switching a current path between the second reference voltage (Vint 2) and an anode of the Light Emitting Diode (LED) in response to the scan signal (sn+1); An eighth transistor (T8) for switching a current path between the third reference voltage (Vint 3) and the first node (N1) in response to the scan signal (sn+1); A ninth transistor (T9) for switching a current path between the fourth reference voltage (Vint 4) and the third node (N3) in response to the second control signal (sn_t3); A tenth transistor (T10) for switching a current path between the operating voltage signal (ELVDD) and the third node (N3) in response to the scan signal (SN-1), and A first capacitor (C1) coupled between the second node (N2) and a third node (N3).
2. A pixel driving circuit according to claim 1, wherein the first transistor (T1), the second transistor (T2), the third transistor (T3), the fourth transistor (T4), the fifth transistor (T5), the sixth transistor (T6), the seventh transistor (T7), the eighth transistor (T8), the ninth transistor (T9), and the tenth transistor (T10) are all N-type thin film transistors.
3. A pixel driving circuit according to claim 1, wherein the first transistor (T1), the second transistor (T2), the third transistor (T3), the fourth transistor (T4), the fifth transistor (T5), the sixth transistor (T6), the seventh transistor (T7), the eighth transistor (T8), the ninth transistor (T9), and the tenth transistor (T10) are P-type thin film transistors.
4. A pixel driving circuit according to claim 1, wherein the first transistor (T1) is a double gate transistor.
5. A pixel driving circuit according to claim 1, wherein the third transistor (T3) is a double gate transistor.
6. A pixel driving circuit according to claim 1, wherein the sixth transistor (T6) is a double gate transistor.
7. A pixel driving circuit according to claim 1, wherein the ninth transistor (T9) is a double gate transistor.
8. A pixel driving circuit according to claim 1, wherein the tenth transistor (T10) is a double gate transistor.
9. A pixel driving circuit according to claim 1, wherein the first transistor (T1), the third transistor (T3), the sixth transistor (T6), the ninth transistor (T9), and the tenth transistor (T10) are dual-gate transistors.
10. A display device according to claim 1, comprising a pixel driving circuit.

Description

Pixel driving circuit and display device Technical Field The invention relates to the field of OLED devices, in particular to a pixel driving circuit and a display device. Background Recently, various flat panel displays having a smaller weight and volume than cathode ray tube displays have been developed, including liquid crystal displays, field emission displays, plasma display panels, and organic light emitting displays. Among flat panel displays, organic light emitting displays display images using Organic Light Emitting Diodes (OLEDs) that generate light by recombination of electrons and holes. The organic light emitting display has a faster response speed and is driven with lower power consumption. A typical organic light emitting display supplies a current according to a data signal to an OLED light emitting device through a transistor formed in a pixel, thereby emitting light from the OLED light emitting device. Organic light emitting displays are classified according to driving types, and may be classified into a passive driving type (PMOLED) which does not use a thin film transistor substrate and an active driving type (AMOLED) which uses a thin film transistor substrate. Each pixel of the active-driven organic light-emitting display is provided with a low-temperature polysilicon thin film transistor with a switching function, and each pixel is provided with a storage capacitor, and the peripheral driving circuit and the display component are integrated on the same glass substrate. Each pixel generates a driving current according to a data signal, and the brightness of the organic light emitting diode is controlled by adjusting the driving current of the OLED light emitting device. Because the process has fluctuation, the threshold voltages of the driving transistors among different pixel circuits are different, and the signal noise and the uneven display of the IC power supply are easy to generate. Especially for the high screen brushing of 240Hz, the uneven display phenomenon is more prominent, the display quality is reduced, and the visual fatigue of the user is easier to occur in the using process. In view of the above drawbacks, the present invention provides a pixel driving circuit and a display device. The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is not already known in this country to a person of ordinary skill in the art. Disclosure of Invention Aiming at the problems in the prior art, the invention aims to provide a pixel driving circuit and a display device, which overcome the difficulties in the prior art, can compensate the charging time of the driving circuit and lead the display effect of a panel to be more uniform. An embodiment of the present invention provides a pixel driving circuit including: a first transistor for switching a current path between the data signal and the third node in response to the first control signal; A second transistor for switching a current path between the first node and the third node in response to a voltage of the second node; a third transistor for switching a current path between the second node and a third node in response to a second control signal; a fourth transistor for switching a current path between the operating voltage signal and the first node in response to the first enable signal; A fifth transistor for switching a current path between the third node and an anode of the light emitting diode in response to a second enable signal, a cathode of the light emitting diode being connected to a ground signal; a sixth transistor for switching a current path between the first reference voltage and the second node in response to the scan signal; a seventh transistor for switching a current path between the second reference voltage and an anode of the light emitting diode in response to the scan signal; An eighth transistor for switching a current path between the third reference voltage and the first node in response to the scan signal; a ninth transistor for switching a current path between the fourth reference voltage and the third node in response to the second control signal; A tenth transistor for switching a current path between the operation voltage signal and the third node in response to the scan signal, and The first capacitor is coupled between the second node and the third node. Preferably, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the ninth transistor and the tenth transistor are all N-type thin film transistors. Preferably, the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor, the ninth transistor and the