CN-122024784-A - Magnetic random access memory data writing method, device and system

CN122024784ACN 122024784 ACN122024784 ACN 122024784ACN-122024784-A

Abstract

The method comprises the steps of determining a first write signal based on data to be written, writing a plurality of magnetic tunnel junctions into first data through the first write signal, determining a second write signal if the data to be written contains at least one first type of second data positioned at least one end of the data to be written, writing the magnetic tunnel junctions corresponding to the first type of second data into the second data through the second write signal, determining a third write signal if the data to be written contains at least one second type of second data positioned in the center of the data to be written, writing the magnetic tunnel junctions corresponding to the second type of second data into the second data through the third write signal, completing data writing, writing specific data into one or a plurality of targets in the same spin track moment layer through a plurality of write paths without affecting the data storage states of MTJs in other MTJs, reducing device cost and improving storage density.

Inventors

XU XIAOYANG
WANG CHAO
Li Mingche
ZHAO WEIMENG
WANG ZHAOHAO
ZHAO WEISHENG

Assignees

杭州市北京航空航天大学国际创新研究院(北京航空航天大学国际创新学院)

Dates

Publication Date: 20260512
Application Date: 20260130

Claims (10)

1. A method of writing data to a magnetic random access memory, the magnetic random access memory comprising a spin-orbit torque layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit torque layer, the method comprising: determining a first write signal based on data to be written, writing the plurality of magnetic tunnel junctions as first data by the first write signal; If the data to be written contains at least one first type of second data positioned at least one end part of the data to be written, determining a second writing signal, and writing a magnetic tunnel junction corresponding to the first type of second data into the second data through the second writing signal; if the data to be written contains at least one second type of second data positioned in the center of the data to be written, determining a third writing signal, and writing the magnetic tunnel junction corresponding to the second type of second data into the second data through the third writing signal to finish data writing.
2. The method of claim 1, wherein the first write signal is a spin-orbit torque write current, the second write signal is a spin-orbit torque write current or a spin-transfer torque write current, and the third write signal is a spin-orbit torque write current.
3. The method of claim 2, wherein determining the first write signal based on the data to be written comprises: determining a target writing rule from preset writing rules based on the data distribution of the data to be written; determining that the value of the first data is 0 or 1 based on the target writing rule; The signal magnitude and direction of the first write signal are determined based on the value of the first data.
4. The method of claim 2, wherein determining the first write signal for spin-orbit torque writing based on the data to be written comprises: Determining the writing time required when the value of the first data is 0 and 1 respectively based on the data distribution of the data to be written; selecting a value with a smaller writing time as a target value of the first data; the signal magnitude and direction of the first write signal are determined based on the target value of the first data.
5. The method of claim 1, wherein the second write signal is a spin-orbit torque write current, and wherein writing the magnetic tunnel junction corresponding to the first type of second data as second data by the second write signal comprises: setting a magnetic tunnel junction adjacent to a magnetic tunnel junction corresponding to at least one first type second data near one end of the spin-orbit torque layer as a target magnetic tunnel junction; Inputting the second write signal from a path formed from the top end of the target magnetic tunnel junction and one end of the spin-orbit torque layer to write data stored in the magnetic tunnel junction corresponding to the first type of second data into second data, wherein the signal value of the second write signal is larger than the critical switching current of the magnetic moment switching of the free layer of the magnetic tunnel junction during spin-orbit torque writing and smaller than the critical switching current of the magnetic moment switching of the free layer of the magnetic tunnel junction during spin-orbit torque writing; Or alternatively The second write signal is a spin-transfer torque write current, and writing the magnetic tunnel junction corresponding to the first type of second data as second data by the second write signal includes: setting a magnetic tunnel junction near the center of the spin-orbit torque layer in the magnetic tunnel junctions corresponding to at least one first type of second data near one end of the spin-orbit torque layer as a target magnetic tunnel junction; And inputting the second write signal from a path formed by the top end of the target magnetic tunnel junction and one end of the spin orbit torque layer to write the data stored in the magnetic tunnel junction corresponding to the first type of second data into second data, wherein the signal value of the second write signal is larger than the critical inversion current of magnetic moment inversion of the free layer of the magnetic tunnel junction during spin transfer torque writing.
6. The method of claim 1, wherein the third write signal is a spin-orbit torque write current, and wherein writing the magnetic tunnel junction corresponding to the second type of second data as the second data by the third write signal comprises: setting two adjacent magnetic tunnel junctions at two sides of the magnetic tunnel junction corresponding to at least one second type of second data as target magnetic tunnel junctions; Inputting the third write signal from a path formed at the top ends of the two target magnetic tunnel junctions to write data stored in the magnetic tunnel junctions corresponding to the second type of second data into second data, wherein the signal value of the second write signal is larger than the critical switching current of the magnetic moment switching of the free layer of the magnetic tunnel junction during spin orbit torque writing and smaller than the critical switching current of the magnetic moment switching of the free layer of the magnetic tunnel junction during spin torque writing.
7. The method for writing data to a magnetic random access memory according to claim 1, characterized in that the method further comprises: If the data stored in the plurality of magnetic tunnel junctions is known data, determining to input the second write current and/or the third write current based on the known data and the data to be written.
8. A magnetic random access memory data writing device, wherein the magnetic random access memory comprises a spin-orbit torque layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit torque layer, the device comprising: A first write control module for determining a first write signal based on data to be written, the plurality of magnetic tunnel junctions being written as first data by the first write signal; The second write control module is used for determining a second write signal if the data to be written contains at least one first type of second data positioned at least one end part of the data to be written, and writing a magnetic tunnel junction corresponding to the first type of second data into the second data through the second write signal; and the third write control module is used for determining a third write signal if the data to be written contains at least one second type of second data positioned in the center of the data to be written, inputting the third write signal through magnetic tunnel junctions adjacent to two sides of the second type of second data, and writing the magnetic tunnel junctions corresponding to the second type of second data into the second data to finish data writing.
9. A magnetic random access memory data writing system comprising the magnetic random access memory data writing device of claim 8 and a magnetic random access memory comprising a spin-orbit torque layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit torque layer.
10. The mram data writing system of claim 9, further comprising a write control line, a first write line, a second write line, a first switching element electrically connected to one end of the spin-orbit torque layer, a second switching element electrically connected to a top end of each magnetic tunnel junction, and a third write line electrically connected to each second switching element; the write control line is electrically connected with the control ends of the first switch and the second switch, the first write line is electrically connected with the other end of the first switch, and the second write line is electrically connected with the other end of the spin orbit moment layer; a first write signal is input through a path formed by the first write line and the second write line; A second write signal is input through a path formed by the third write line and the first write line or the third write line and the second write line; The third write signal is input through a path formed by the two third write lines.

Description

Magnetic random access memory data writing method, device and system Technical Field The present application relates to the field of random access memories, and in particular, to a method, an apparatus, and a system for writing data into a magnetic random access memory. Background In the process of rapid evolution of an information storage technology to a high-density, low-power consumption and high-reliability direction, the spin-orbit torque magnetic random access memory has the outstanding advantages of high read-write speed, long erasing service life, non-volatility and the like, and becomes one of core candidate technologies for replacing a traditional storage device, and a core working mechanism of the SOT-MRAM is to apply current in a spin-orbit torque layer, generate spin-orbit torque by means of a spin Hall effect, regulate and control magnetic moment overturning of a free layer of a magnetic tunnel junction above the spin-orbit torque layer, and realize storage and reading of data 0 and 1 through a low-resistance state and a high-resistance state. The NAND-SPIN memory device improves the storage density of SOT-MRAM by integrating multiple Magnetic Tunnel Junctions (MTJs) into the same SPIN-orbit torque layer. In order to avoid the error writing of a non-target MTJ, the writing operation must be sequentially performed from high level to low level, on the other hand, the low level MTJ will be repeatedly written in the writing process of the high level MTJ, a large number of redundant writing steps exist, and in order to realize the independent writing of a single MTJ, the width of the SPIN-orbit moment layer needs to be increased in equal proportion, so that the threshold value turnover current of the MTJ is increased step by step in proportion, resulting in the increase of the manufacturing cost and the volume of the device, the increase of the operation complexity, and the average writing power consumption. Disclosure of Invention Aiming at least one of the problems in the prior art, the application provides a data writing method, a device and a system of a magnetic random access memory, which are used for writing specific data into one or more target MTJs in a plurality of MTJs on the same spin-orbit moment layer through a plurality of writing paths without influencing the data storage state in other MTJs, thereby reducing the cost of devices and improving the storage density. A first aspect of the present application provides a magnetic random access memory data writing method including a spin-orbit torque layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit torque layer, the method comprising: determining a first write signal based on data to be written, writing the plurality of magnetic tunnel junctions as first data by the first write signal; If the data to be written contains at least one first type of second data positioned at least one end part of the data to be written, determining a second writing signal, and writing a magnetic tunnel junction corresponding to the first type of second data into the second data through the second writing signal; if the data to be written contains at least one second type of second data positioned in the center of the data to be written, determining a third writing signal, and writing the magnetic tunnel junction corresponding to the second type of second data into the second data through the third writing signal to finish data writing. Optionally, the first write signal is a spin-orbit torque write current, the second write signal is a spin-orbit torque write current or a spin-transfer torque write current, and the third write signal is a spin-orbit torque write current. Optionally, the determining the first write signal based on the data to be written includes: determining a target writing rule from preset writing rules based on the data distribution of the data to be written; determining that the value of the first data is 0 or 1 based on the target writing rule; The signal magnitude and direction of the first write signal are determined based on the value of the first data. Optionally, the determining the first write signal for spin-orbit torque writing based on the data to be written includes: Determining the writing time required when the value of the first data is 0 and 1 respectively based on the data distribution of the data to be written; selecting a value with a smaller writing time as a target value of the first data; the signal magnitude and direction of the first write signal are determined based on the target value of the first data. Optionally, the writing the plurality of magnetic tunnel junctions as the first data by the first write signal includes: The first write signal is input to the spin-orbit torque layer to write data stored by the plurality of magnetic tunnel junctions as first data, the signal value of the first write signal being greater than a critical switching current of magnetic moment switching of t