CN-122024790-A - Solid state disk with self-healing capability and control method thereof

CN122024790ACN 122024790 ACN122024790 ACN 122024790ACN-122024790-A

Abstract

The invention discloses a solid state disk with self-healing capacity and a control method thereof, and relates to the technical field of solid state disks, wherein the solid state disk comprises a PCB circuit board, a main control chip welded on the PCB circuit board through a surface mounting technology, a special power module and NAND FLASH storage particles, wherein the NAND FLASH storage particles are standard plastic package chips, and a plurality of layers of stacked storage wafers and controller interfaces are contained in the solid state disk; the special power supply module is connected with the main control chip and the heating film structure, and is used for providing a high-voltage heating power supply Vheat for the heating film structure and a conventional power supply Vcc for the main control chip. The invention prolongs the service life of the solid state disk and ensures the safety of stored data.

Inventors

Li Yufo
YANG WANYUN
HE JIAOYANG
YUAN QINGQING
MA YI
XIONG WEI

Assignees

芯盛智能科技(湖南)有限公司

Dates

Publication Date: 20260512
Application Date: 20260413

Claims (9)

1. A solid state disk with self-healing capability is characterized by comprising a PCB circuit board, a main control chip welded on the PCB circuit board through a surface mounting technology, a special power module and NAND FLASH storage particles, wherein the NAND FLASH storage particles are standard plastic package chips, a storage wafer and a controller interface which are stacked in multiple layers are contained in the storage particles, the solid state disk also comprises a heating film structure for heating and radiating the NAND FLASH storage particles, the heating film structure is a metal composite film doped with graphene or a carbon nano tube, and the special power module is connected with the main control chip and the heating film structure and is used for providing a high-voltage heating power supply Vheat for the heating film structure and a conventional power supply Vcc for the main control chip.
2. The solid state disk with self-healing capacity of claim 1, wherein said heating film structure is physically attached to the outer surface of the top layer of said NAND FLASH storage particles and is tightly adhered to said NAND FLASH storage particles by a high thermal conductive insulating adhesive.
3. The solid state disk with self-healing capabilities of claim 2 wherein the heating film structure extends with independent power pins or a flexible circuit board connected to a dedicated power module on a PCB circuit board.
4. The solid state disk with self-healing capacity of claim 1, wherein the heating film structure is directly integrated on the surface of the storage wafer or is sandwiched between two adjacent layers of storage wafers, and is manufactured by vapor deposition or micro-nano transfer printing technology at the manufacturing or packaging process stage of the storage wafers.
5. The solid state disk with self-healing capacity of claim 4, wherein the NAND FLASH storage particles are packaged in a chip, the solid state disk further comprises a packaging substrate and a packaging cover, the multi-layer stacked storage wafer is located between the packaging substrate and the packaging cover, bonding pads mapped to solder balls at the bottom of the packaging chip are arranged on the packaging substrate, and the solder balls at the bottom of the packaging chip are used for being connected with an external main control chip.
6. The solid state disk with self-healing capacity of claim 5, wherein the electrode of the heating film structure is directly led out and connected to the bonding pad of the packaging substrate through a through silicon via or an internal bonding wire.
7. The solid state disk with self-healing capacity according to claim 1, further comprising a mode switching switch circuit, wherein the mode switching switch circuit controls connection or disconnection of a high-voltage heating power supply Vheat and the heating film structure through a mode switching signal output by a main control chip, the special power supply module is controlled by a GPIO signal of the main control chip, and the main control chip is connected with a packaging chip for NAND FLASH storage particles through a bus to transmit data signals and control signals.
8. The solid state disk with self-healing capacity of claim 1, wherein the NAND FLASH storage space for storing particles is physically divided into an active working area and a dormant redundant area, the active working area is used for a conventional storage scene, and the dormant redundant area is used for repairing a migration scene.
9. A control method for the solid state disk with self-healing capability according to claim 1, comprising the steps of: s100, powering on a solid state disk system, wherein a heating film structure is grounded by default, and the working mode of the heating film structure is a heat dissipation mode; S101, a main control chip acquires and monitors the temperature of a storage wafer of an active working area, the bit error rate RBER and the erasing P/E times in real time through a bus; s102, the main control chip judges whether the error rate RBER and the erasing P/E times of the active working area reach a preset service life end threshold value or not, if not, the main control chip returns to the step S101 to continue monitoring, if so, the main control chip enters the step S200 to activate the redundancy and migration stage; S200, activating a dormant redundant area, and performing background migration on effective data of an active working area to the dormant redundant area; s201, updating a logic address mapping table, taking over subsequent storage service by a dormant redundant area, and taking off an active working area and marking the active working area as to-be-repaired; S300, a main control chip sends a mode switching signal instruction to a mode switching switch circuit, and the mode switching switch circuit switches on a high-voltage heating power supply Vheat of a heating film structure corresponding to an active working area; S301, enabling wafer I/O of an active working area to enter a suspended state, enabling a heating film structure corresponding to the active working area to be connected with a high-voltage heating power supply Vheat, then storing the wafer to be heated to 120-300 ℃, and keeping the temperature for a period of time T; s400, after the constant temperature keeping time T is exceeded, the high-voltage heating power supply Vheat is disconnected, and the working mode of the heating film structure is cut into a heat dissipation mode; s401, executing full-disk erasing and pressure testing on the storage wafer corresponding to the active working area; S402, judging whether the performance of the storage wafer corresponding to the active working area is restored to the available standard, if not, marking the storage wafer as an unavailable bad block, if so, marking the storage wafer as a regeneration redundant block, and placing the storage wafer into a standby storage pool; S500, ending the flow or returning to the monitoring state.

Description

Solid state disk with self-healing capability and control method thereof Technical Field The invention relates to the technical field of solid state disks, in particular to a solid state disk with self-healing capacity and a control method thereof. Background After a certain number of programming/erasing (P/E) cycles, the conventional NAND FLASH-based Solid State Disk (SSD) has the problems of reduced data retention and increased bit error rate, and finally the life of the SSD is ended due to the fact that excessive electron traps are accumulated in a tunnel oxide layer to reduce the insulating performance. When SSD reaches the end of life, it can only be discarded or physically recovered, which can cause electronic waste and resource waste problems. The existing scheme for delaying the service life of the SSD mainly comprises the following three methods, namely, service life management is carried out through a wear balancing algorithm and a reserved space, but a medium cannot be physically repaired. And secondly, the NAND particles are detached from the PCB, thermal annealing is carried out, then the NAND particles are re-welded on the PCB, and finally firmware burning is carried out, but the heating repair process is not easy to operate. Thirdly, a graphite sheet or a metal radiating sheet is attached to the surface of the SSD, but the method is only used for cooling and has no repairing function. In addition, the high-performance SSD generates a large amount of waste heat during high-speed reading and writing, if the waste heat is not timely dissipated, the temperature inside the particles is quickly increased, the data reliability is reduced, the service life of the particles is shortened, the problem of heat dissipation of NAND particles in the limited packaging space of the SSD is also considered, and the prior art adopts a means of simultaneously installing a heater and a radiator, but the thickness and the cost are obviously increased. Disclosure of Invention The invention aims to overcome the defects of the prior art and provide a solid state disk with self-healing capacity and a control method thereof so as to prolong the service life of the solid state disk and ensure the safety of stored data. The aim of the invention is realized by the following technical scheme: first aspect: A solid state disk with self-healing capability comprises a PCB circuit board, a main control chip, a special power module and NAND FLASH storage particles which are welded on the PCB circuit board through a surface mounting technology, wherein the NAND FLASH storage particles are standard plastic package chips, a storage wafer and a controller interface which are stacked in a multi-layer mode are contained in the NAND FLASH storage particles, the solid state disk also comprises a heating film structure for heating and radiating the NAND FLASH storage particles, the heating film structure is a metal composite film doped with graphene or carbon nanotubes, and the special power module is connected with the main control chip and the heating film structure and is used for providing a high-voltage heating power Vheat for the heating film structure and a conventional power supply Vcc for the main control chip. Further, the heating film structure is physically attached to the outer surface of the top layer of NAND FLASH storage particles, and is tightly adhered to the NAND FLASH storage particles through high-heat-conductivity insulating glue. Further, the heating film structure is extended with independent power supply pins or a flexible circuit board connected to a special power module on the PCB circuit board. Further, the heating film structure is directly integrated on the surface of the storage wafer or is clamped between two adjacent layers of storage wafers, and is manufactured through vapor deposition or micro-nano transfer printing technology in the manufacturing or packaging process stage of the storage wafers. Further, the package chip for NAND FLASH storage particles also comprises a package substrate and a package cover, the storage wafer stacked in multiple layers is positioned between the package substrate and the package cover, the package substrate is provided with a bonding pad mapped to a solder ball at the bottom of the package chip, and the solder ball at the bottom of the package chip is used for being connected with an external main control chip. Further, the electrode of the heating film structure is directly led out and connected to the bonding pad of the packaging substrate through a through silicon hole or an internal bonding wire. The heating film structure is characterized by further comprising a mode switching switch circuit, wherein the mode switching switch circuit controls the connection or disconnection of the high-voltage heating power supply Vheat and the heating film structure through a mode switching signal output by the main control chip, the special power supply module is controlled by a