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CN-122025417-A - Energy storage device and preparation method thereof

CN122025417ACN 122025417 ACN122025417 ACN 122025417ACN-122025417-A

Abstract

The application discloses an energy storage device and a preparation method thereof. The energy storage device includes a ceramic matrix material including a plurality of lattice sites and at least two doped ions. At least two doped ions doped at different said lattice sites, the difference between the ionic radius of the at least two doped ions and the ionic radius of ti4+ being at least 5 angstroms. In this way, the doped ions can cause serious lattice distortion to the perovskite crystal structure, so that the original ferroelectric structure with long-range order of the ceramic matrix is destroyed, a polar nanometer micro-region (PNRs) is formed, and as the lattice distortion of different degrees exists in PNRs, the Curie temperatures among different PNRs are often different, so that the dielectric frequency dispersion temperature peak of the ceramic formed by the doped ions and the ceramic matrix material is widened and even vanished, the dielectric bias stability of the BNT ceramic is improved, and the energy storage temperature stability of the BNT ceramic is improved.

Inventors

  • YU HAICHAO
  • MENG MENG
  • SHENG TAO

Assignees

  • 强一半导体(苏州)股份有限公司

Dates

Publication Date
20260512
Application Date
20260318

Claims (14)

  1. 1. An energy storage device, the energy storage device comprising: a ceramic matrix material comprising a plurality of lattice sites; at least two doped ions doped at different said lattice sites, the difference between the ionic radius of the at least two doped ions and the ionic radius of ti4+ being at least 5 angstroms.
  2. 2. The energy storage device of claim 1, wherein said plurality of lattice sites comprises a plurality of first lattice sites, said at least three dopant ions being located at different ones of said first lattice sites, respectively.
  3. 3. The energy storage device of claim 1 or 2, wherein the ceramic matrix material has a general formula ABO 3 .
  4. 4. The energy storage device of claim 3, wherein, where the plurality of lattice sites includes a plurality of first lattice sites, the first lattice sites are B sites and/or the ceramic matrix material is Na 0.5 Bi 0.5 TiO 3 .
  5. 5. The energy storage device of claim 2, wherein the at least two doped ions comprise Sn 4+ 、Hf 4+ 、Zr 4+ and Ce 4+ .
  6. 6. The energy storage device of claim 5, wherein the doped material of Sn 4+ is SnO 2 , the doped material of Hf 4+ is HfO 2 , the doped material of Zr 4+ is ZrO 2 , and the doped material of Ce 4+ is CeO 2 ; and/or the doping content of Sn 4+ 、Hf 4+ 、Zr 4+ 、Ce 4+ doping ions is 0.1-0.2 mol%.
  7. 7. The energy storage device of claim 1, wherein the structural entropy of the ceramic matrix material satisfies: Wherein R is an ideal gas constant, N (M) is an atomic species, x i （x j ) is a cation duty ratio, and the configuration entropy value is not less than 1.52.
  8. 8. A method of manufacturing an energy storage device, the method comprising the steps of: Doping at least two ions into lattice sites of a ceramic matrix material to form a raw material; Ball milling, mixing, drying and presintering the raw materials, and casting to form a raw ceramic chip; isostatic pressing the green ceramic chip and then sintering at high temperature to form high-entropy ceramic; And preparing the energy storage device by using the high-entropy ceramic raw material.
  9. 9. The method of claim 8, wherein the ceramic matrix material has a general formula ABO 3 , and the ions are doped at the B site of the ceramic matrix material.
  10. 10. The method of manufacturing an energy storage device according to claim 9, wherein the B-site of the ceramic matrix material is doped with sn4+, hf4+, zr4+, ce4+.
  11. 11. The method of claim 10, wherein the ions comprise at least one of the following characteristics: a) The Sn 4+ doped material is SnO 2 ,Hf 4+ doped material, the HfO 2 ,Zr 4+ doped material is ZrO 2 ,Ce 4+ doped material and CeO 2 doped material; b) The doping content of Sn 4+ 、Hf 4+ 、Zr 4+ 、Ce 4+ doping ions is 0.1-0.2 mol%; c) SnO 2 powder particle size D50 is (2-6) microns, hfO 2 powder particle size D50 is (1-4) microns, zrO 2 powder particle size D50 is (2-5) microns, ceO 2 powder particle size D50 is (2-6) microns; d) The purity of SnO 2 powder is more than or equal to 95%, the purity of HfO 2 powder is more than or equal to 98%, the purity of ZrO 2 powder is more than or equal to 98%, and the purity of CeO 2 powder is more than or equal to 98%.
  12. 12. The method of claim 8, wherein the method of manufacturing the energy storage device comprises at least one of the following process conditions: a) In the ball milling step, the ball milling rotating speed is (100-300) rpm, and the ball milling time is (6-8) h; b) In the presintering step, the presintering temperature is (500-800) °c, and the drying time is (1-2) h; c) In the casting step, the organic system used for casting comprises a dispersing agent, a binding agent and a plasticizer, wherein the dispersing agent comprises at least one of phosphate esters, castor oil and fish oil, the binding agent comprises at least one of polyvinyl butyral, polyvinyl alcohol and polyacrylic resin, and the plasticizer comprises at least one of dibutyl phthalate, polyethylene glycol and dioctyl phthalate.
  13. 13. The method of manufacturing an energy storage device according to claim 12, wherein in the dispersant, the castor oil is 5 to 10wt%, the polyvinyl butyral is 50 to 60wt%, and the dibutyl phthalate is 30 to 40wt%.
  14. 14. The method of manufacturing an energy storage device of claim 8, wherein the method of manufacturing an energy storage device comprises at least one of the following process conditions: a) In the isostatic pressing step, the isostatic pressing pressure is 20-80MPa, and the dwell time is 20-30 minutes; b) In the sintering step, the sintering temperature is 1100-1400 ℃, the heat preservation time is 60-120 minutes, and the heating rate is 3-5 ℃ per minute.

Description

Energy storage device and preparation method thereof Technical Field The application belongs to the technical field of energy storage, and particularly relates to an energy storage device and a preparation method of the energy storage device. Background The energy storage device (such as a dielectric capacitor) has the characteristics of high instantaneous power and short discharge time, can realize huge power pulse of millisecond or microsecond level, and is widely used in the fields of modern power electronics, energy sources, national defense and the like. Currently, energy storage devices are evolving towards higher power, faster response, smaller volumes, and higher stability. However, the skilled person finds that the energy storage temperature stability of some existing energy storage devices is not good. Disclosure of Invention The application aims to overcome the defects in the prior art and provides an energy storage device and a preparation method thereof, wherein the energy storage device has good energy storage temperature stability. In order to achieve the above purpose, the application adopts the following technical scheme: In a first aspect, an energy storage device is disclosed. The energy storage device includes a ceramic matrix material and at least two doped ions. The ceramic matrix material includes a plurality of lattice sites. At least two doped ions are doped at different of said lattice sites, the difference between the ionic radius of the at least two doped ions and the ionic radius of ti4+ being at least 5 angstroms. In some embodiments, the plurality of lattice sites comprises a plurality of first lattice sites, and the at least three dopant ions are located at different ones of the first lattice sites, respectively. In some embodiments, the ceramic matrix material has the general formula ABO 3. In some embodiments, where the plurality of lattice sites includes a plurality of first lattice sites, the first lattice sites are B sites and/or the ceramic matrix material is na0.5bi0.5tio3. In some embodiments, the at least two doped ions include sn4+, hf4+, zr4+, and ce4+. In some embodiments, the doped material of sn4+ is SnO2, the doped material of hf4+ is HfO2, the doped material of zr4+ is ZrO2, and the doped material of ce4+ is CeO2. In some embodiments, the doping content of sn4+, hf4+, zr4+, ce4+ doping ions is 0.1-0.2 mol%. In some embodiments, the structural entropy of the ceramic matrix material satisfies: Wherein R is an ideal gas constant, N (M) is an atomic species, xi (xj) is a cation duty ratio, and the configuration entropy value is not less than 1.52. In a second aspect, the application discloses a method of manufacturing an energy storage device. The preparation method of the energy storage device comprises the following steps: Doping at least two ions into lattice sites of a ceramic matrix material to form a raw material; Ball milling, mixing, drying and presintering the raw materials, and casting to form a raw ceramic chip; isostatic pressing the green ceramic chip and then sintering at high temperature to form high-entropy ceramic; And preparing the energy storage device by using the high-entropy ceramic raw material. In some embodiments, the ceramic matrix material has the general formula ABO 3, and the ions are doped at the B site of the ceramic matrix material. In some embodiments, the B site of the ceramic matrix material is doped with sn4+, hf4+, zr4+, ce4+. In some embodiments, the ions include at least one of the following features: a) The Sn4+ doped material is SnO2, the Hf4+ doped material is HfO2, the Zr4+ doped material is ZrO2, and the Ce4+ doped material is CeO2; b) The doping content of the doping ions of Sn4+, hf4+, zr4+ and Ce4+ is 0.1-0.2 mol%; c) SnO2 powder having a particle size D50 of (2-6) micrometers, hfO2 powder having a particle size D50 of (1-4) micrometers, zrO2 powder having a particle size D50 of (2-5) micrometers, ceO2 powder having a particle size D50 of (2-6) micrometers; d) The purity of SnO2 powder is more than or equal to 95%, the purity of HfO2 powder is more than or equal to 98%, the purity of ZrO2 powder is more than or equal to 98%, and the purity of CeO2 powder is more than or equal to 98%. In some embodiments, the method of making the energy storage device includes at least one of the following process conditions: a) In the ball milling step, the ball milling rotating speed is (100-300) rpm, and the ball milling time is (6-8) h; b) In the presintering step, the presintering temperature is (500-800) °c, and the drying time is (1-2) h; c) In the casting step, the organic system used for casting comprises a dispersing agent, a binding agent and a plasticizer, wherein the dispersing agent comprises at least one of phosphate esters, castor oil and fish oil, the binding agent comprises at least one of polyvinyl butyral, polyvinyl alcohol and polyacrylic resin, and the plasticizer comprises at least one of dibutyl phthalate, polye