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CN-122025492-A - Nanometer plasma switch with vertical electrode structure

CN122025492ACN 122025492 ACN122025492 ACN 122025492ACN-122025492-A

Abstract

The application belongs to the technical field of nano plasma switches, and relates to a nano plasma switch with a vertical electrode structure, which comprises a basal layer, a first conductive layer, a dielectric layer and a second conductive layer which are sequentially overlapped from bottom to top; the dielectric layer is provided with a cavity which vertically penetrates through the dielectric layer along the overlapping direction, the second conductive layer covers one end of the cavity, which is far away from the first conductive layer, and is arranged between the second conductive layer and the first conductive layer, excitation voltage is applied to the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, the cavity is used as an electrode gap, and the nano plasma switch with a vertical electrode structure is formed. The application can increase the effective field electron emission area, reduce the difficulty of switch conduction, and has short time for the switch to be switched from the off state to the complete conduction and high response speed.

Inventors

  • LIU HANQING
  • HUANG RUIQI
  • DONG QIAN
  • NI XIAOCHENG
  • XU YUAN

Assignees

  • 中国人民解放军国防科技大学

Dates

Publication Date
20260512
Application Date
20260410

Claims (10)

  1. 1. The nanometer plasma switch with the vertical electrode structure is characterized by comprising a basal layer, a first conductive layer, a dielectric layer and a second conductive layer which are sequentially overlapped from bottom to top; the dielectric layer is provided with a cavity vertically penetrating through the dielectric layer along the overlapping direction, and the second conductive layer covers one end of the cavity far away from the first conductive layer and is arranged at intervals with the first conductive layer; And applying excitation voltage on the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, the cavity is used as an electrode gap, and the nano plasma switch with a vertical electrode structure is formed.
  2. 2. The nanoplasmon switch of claim 1, wherein the cavity is of cylindrical configuration.
  3. 3. The nanoplasmon switch of claim 2, wherein the number of cavities is a plurality, the plurality of cavities are arranged in an array at intervals, and the distance between adjacent cavities is greater than the diameter of the cylindrical structure.
  4. 4. A nanoplasmon switch having a vertical electrode structure according to claim 3, wherein the ratio of radius to height of the cylindrical structure is no greater than 2:1.
  5. 5. A nanoplasmon switch having a vertical electrode structure according to any of claims 1 to 4, wherein the inner wall of the cavity is provided with a recess for use as a pressure reducing channel for the gas in the cavity region when forming the plasma channel.
  6. 6. The nanoplasmon switch of claim 5, wherein the number of grooves is a plurality of grooves uniformly spaced along the circumference of the cavity.
  7. 7. The nanoplasmon switch of claim 6, wherein the grooves extend through the dielectric layer in the height direction of the cavities and the grooves between adjacent cavities communicate to divide the dielectric layer into a plurality of dielectric units disposed at intervals.
  8. 8. The nanoplasmon switch of claim 7, wherein the first conductive layer is hollowed out at a location corresponding to each dielectric element.
  9. 9. The nanoplasmon switch of any of claims 1 to 4, further comprising an insulating layer; The insulating layer is arranged above the second conductive layer.
  10. 10. A nanoplasmon switch having a vertical electrode structure according to any of claims 1 to 4, wherein the second conductive layer is made of a two-dimensional material.

Description

Nanometer plasma switch with vertical electrode structure Technical Field The application relates to the technical field of nano plasma switches, in particular to a nano plasma switch with a vertical electrode structure. Background In the field of modern electronics, switching devices play an indispensable role. With the continuous development of electronic technology toward higher operating frequencies, faster response speeds and higher operating powers, conventional solid state switching devices have not been able to meet the real needs. On one hand, the traditional solid-state switching device can generate thermal excitation/radiation excitation current in high-temperature, strong-radiation and strong-electromagnetic interference environments to reduce the working efficiency and even disorder the working state, and on the other hand, the traditional solid-state switching device is difficult to break through the bottleneck due to the limitations of output capacitance, electronic saturation speed and critical electric field. In addition, with the development of micro-nano processing technology, the electrode spacing of the plasma switch can be even reduced to nano scale, so that the so-called nano plasma switch is realized, and the response speed of the plasma switch is greatly improved. Thus, nanoplasmonic switches have significant performance advantages over traditional solid state switching devices in harsh environments and in scenarios requiring ultra-fast response. In the prior art, the nano-plasma switch has a planar electrode structure. The main implementation scheme is that two electrodes (a cathode and an anode) of the switch are arranged on the same plane, and the gap between the cathode and the anode is designed to be in a submicron to nanometer scale. When the exciting voltage reaches the conduction threshold value of the nano plasma switch, gas breakdown occurs in the electrode gap, conductive plasma is formed as a carrier, and the switch is in a conduction state. However, the nano-plasma switch is switched from an off state to an on state by the field electron emission effect of the electrode under an applied excitation voltage, and electrons emitted by the electrode are injected into the electrode gap to serve as seed electrons for causing gas breakdown of the gap. The existing planar electrode structure nano plasma switch has stronger local field intensity in the electrode edge area, the switch is turned on mainly by electrode field electron emission effect in the electrode gap edge area, the effective field electron emission area is small, the switch turning-on process initially occurs in the electrode gap edge area and then gradually expands to part of the gap area, the difficulty of switch turning-on is increased, the time required for the switch to be turned on completely from the cut-off state is long, and the response speed is slow. Disclosure of Invention Based on the above, it is necessary to provide a nano-plasma switch with a vertical electrode structure, which can increase the effective field electron emission area, reduce the difficulty of switch conduction, realize a plasma conduction channel in a larger area, and have short time required for the switch to be switched from the off state to the complete conduction and high response speed. A nanometer plasma switch with a vertical electrode structure comprises a basal layer, a first conductive layer, a dielectric layer and a second conductive layer which are sequentially overlapped from bottom to top; the dielectric layer is provided with a cavity vertically penetrating through the dielectric layer along the overlapping direction, and the second conductive layer covers one end of the cavity far away from the first conductive layer and is arranged at intervals with the first conductive layer; And applying excitation voltage on the first conductive layer and the second conductive layer to form a potential difference between the first conductive layer and the second conductive layer, so that the first conductive layer and the second conductive layer are used as electrodes, the cavity is used as an electrode gap, and the nano plasma switch with a vertical electrode structure is formed. In one embodiment, the cavity is a cylindrical structure. In one embodiment, the number of the cavities is a plurality, the plurality of cavities are arranged at intervals in an array, and the distance between the adjacent cavities is larger than the diameter of the cylindrical structure. In one embodiment, the ratio of the radius to the height of the cylindrical structure is no greater than 2:1. In one embodiment, grooves are provided on the inner wall of the cavity to serve as pressure reducing channels for the gas in the cavity region when forming the plasma channel. In one embodiment, the number of the grooves is a plurality, and the grooves are uniformly spaced along the circumference of the cavity. In one embodiment, the grooves penetrate through