Search

CN-122025497-A - Gas transmission structure, lower electrode device and semiconductor process equipment

CN122025497ACN 122025497 ACN122025497 ACN 122025497ACN-122025497-A

Abstract

The invention provides a gas transmission structure, a lower electrode device and semiconductor process equipment, wherein the gas transmission structure is used for transmitting semiconductor process gas and comprises a structure main body and a plurality of gas transmission channels, the gas transmission channels are arranged on the structure main body at intervals, the distance between any two points of each gas transmission channel on the periphery of any section perpendicular to a first direction is smaller than or equal to 0.5mm, and the first direction is the flowing direction of the semiconductor process gas in the gas transmission channel. The gas transmission structure, the lower electrode device and the semiconductor process equipment provided by the invention can reduce or even eliminate the ignition risk of back gas, so that the pressure resistance of the lower electrode device can be improved, and the stability of the semiconductor process can be improved.

Inventors

  • YANG JIPENG
  • MAO XINGFEI
  • WANG HAILI
  • LV YONGLI

Assignees

  • 北京北方华创微电子装备有限公司

Dates

Publication Date
20260512
Application Date
20241101

Claims (20)

  1. 1. The utility model provides a gas transmission structure for carry semiconductor process gas, its characterized in that, gas transmission structure includes main structure body and a plurality of gas transmission air flue, and a plurality of gas transmission air flue interval sets up the main structure body, and every gas transmission air flue is less than or equal to 0.5mm in arbitrary two interval of arbitrary cross-section periphery in the direction of perpendicular to, wherein, first direction is the direction of flow of semiconductor process gas in the gas transmission air flue.
  2. 2. The gas delivery structure according to claim 1, wherein a plurality of the gas delivery passages are divided into a plurality of gas delivery groups, each gas delivery group includes a plurality of the gas delivery passages, a plurality of the gas delivery passages of a same gas delivery group are arranged at intervals in a circumferential direction of a same radial dimension of the structural body, and a plurality of the gas delivery passages of different gas delivery groups are arranged at intervals in a circumferential direction of different radial dimensions of the structural body.
  3. 3. The gas transmission structure according to claim 1, wherein the structure body comprises a plurality of structure split bodies, the plurality of structure split bodies are sleeved in sequence, a plurality of first gas grooves are formed in the peripheral wall of each structure split body, the plurality of first gas grooves are arranged at intervals in the circumferential direction of the structure split body, and a space formed by the first gas grooves in the peripheral wall of each structure split body and the inner wall of another structure split body sleeved outside the structure split body in a surrounding mode serves as the gas transmission gas passage.
  4. 4. A gas delivery structure according to claim 3, wherein the plurality of structural members are divided into a central columnar member and at least one edge annular member, one of the edge annular members being provided outside the central columnar member, or the plurality of edge annular members being provided outside the central columnar member in sequence.
  5. 5. A gas delivery structure according to claim 3, wherein one of the two adjacent structural members is provided with a first positioning portion, the other is provided with a first stopper portion, and the two adjacent structural members are positioned by the stopper engagement of the first positioning portion with the first stopper portion.
  6. 6. The gas delivery structure of claim 1, wherein the gas delivery conduit has a semicircular radial cross-section.
  7. 7. The gas delivery structure according to claim 2, wherein the number of the structural bodies is plural, the gas delivery structure further comprises a turbulent flow structure, the plurality of the structural bodies are sequentially arranged in an axial direction of the gas delivery air passages, the gas delivery air passages of two adjacent structural bodies are communicated through the turbulent flow structure, the turbulent flow structure is used for changing and converging a flow direction of semiconductor process gas flowing from the plurality of the gas delivery air passages of one of the two adjacent structural bodies to the turbulent flow structure, and dispersing and flowing the converged semiconductor process gas to the plurality of the gas delivery air passages of the other structural body.
  8. 8. A gas delivery structure according to claim 7, wherein the turbulence structure comprises a turbulence main body, and a converging gas passage and a plurality of turbulence gas passages arranged in the turbulence main body, the turbulence main body is arranged between two adjacent structural main bodies, the plurality of turbulence gas passages are in one-to-one correspondence with the plurality of gas delivery gas passages of two adjacent structural main bodies, and the turbulence gas passages respectively communicated with the gas delivery gas passages of two adjacent structural main bodies are communicated through the converging gas passages, and an included angle is formed between an axial direction of the turbulence gas passages and an axial direction of the gas delivery gas passages.
  9. 9. The gas delivery structure of claim 8, wherein an angle between an axial direction of the turbulent gas flow path and an axial direction of the gas delivery path is 90 °.
  10. 10. The gas delivery structure according to claim 8, wherein a pitch of any two points on an outer periphery of any cross section perpendicular to a second direction, which is a flow direction of the semiconductor process gas in the turbulent gas passages, is less than or equal to 0.5 mm.
  11. 11. The gas delivery structure according to claim 8, wherein a distance between any two points on an outer periphery of any cross section of the flow converging passage in a third direction, which is parallel to a flow direction of the semiconductor process gas in the flow converging passage, is less than or equal to 0.5 mm.
  12. 12. The gas delivery structure according to claim 8, wherein the number of the confluence gas passages is plural, the plural turbulent flow gas passages are divided into plural turbulent flow groups, each turbulent flow group includes plural turbulent flow gas passages, the plural turbulent flow groups are arranged in one-to-one correspondence with the plural gas delivery groups of the adjacent two structural bodies, the plural turbulent flow gas passages of the same turbulent flow group are in one-to-one correspondence with the plural gas delivery gas passages of the same gas delivery group, and the turbulent flow gas passages of the corresponding two turbulent flow groups of the adjacent two structural bodies are in one-to-one correspondence with the confluence gas passages.
  13. 13. The gas delivery structure according to claim 12, wherein the turbulence main body includes two turbulence split bodies, each of the turbulence split bodies includes two turbulence sub-air passages, the two turbulence split bodies are disposed on two opposite end surfaces of the two adjacent structure main bodies in one-to-one correspondence, each of the turbulence split bodies is provided with a plurality of turbulence groups in one-to-one correspondence with a plurality of gas delivery groups of the corresponding structure main body, the two of the same turbulence sub-air passages are disposed in one-to-one correspondence with the two turbulence split bodies and are in opposite communication, and the turbulence sub-air passages are in communication with a plurality of turbulence air passages of the corresponding turbulence groups of the turbulence split bodies where the turbulence sub-air passages are located.
  14. 14. The gas delivery structure according to claim 13, wherein the turbulent flow split body includes an annular convex portion and a plurality of block-shaped convex portions, the plurality of block-shaped convex portions are a plurality of convex portion groups, each of the convex portion groups includes a plurality of block-shaped convex portions, the plurality of convex portion groups are arranged in one-to-one correspondence with the plurality of gas delivery groups, the plurality of block-shaped convex portions of a same convex portion group are arranged at intervals in a circumferential direction where the corresponding plurality of gas delivery passages of a same gas delivery group are located, and a gap between two adjacent block-shaped convex portions of a same convex portion group forms a second gas groove as the turbulent flow passage; a third air groove is formed in the space, surrounded by the plurality of block-shaped convex parts, of the same convex part group, of the structural main body, and the third air groove is used as the converging sub-air passage; the annular convex part is arranged between one convex part group and the confluence sub-air passage formed by the other convex part group, which are adjacent to each other in the radial direction of the structural main body; The adjacent two vortex components are arranged in a staggered manner in the circumferential direction of the plurality of block-shaped convex parts of the same convex part group, so that the condition that one vortex air passage of one vortex component of the adjacent two vortex components corresponds to the block-shaped convex part of the other vortex component is met.
  15. 15. A gas delivery structure as in claim 13, wherein each of said converging sub-airways has a depth of less than or equal to 0.3mm, and a sum of depths of two opposing communicating converging sub-airways is less than or equal to 0.5mm.
  16. 16. A gas delivery structure according to claim 7, wherein one of the two adjacent structural bodies is provided with a second positioning portion, the other structural body is provided with a second stopper portion, and the two adjacent structural bodies are positioned by the stopper engagement of the second positioning portion with the second stopper portion.
  17. 17. A gas delivery structure according to claim 7, wherein at least one of two of the plurality of structural bodies located at both ends is further provided with an abutment protrusion provided on an end face of the structural body facing away from the remaining structural bodies, the structural body being abutted against an external device through the abutment protrusion, and a thickness of the abutment protrusion being less than or equal to 0.5mm.
  18. 18. A lower electrode device applied to semiconductor process equipment, comprising a carrier member for carrying a wafer, a lower rf source electrically connected to the carrier member for feeding lower rf to the carrier member, and a gas delivery structure disposed below the carrier member for delivering a backing gas to a backing gas channel of the carrier member.
  19. 19. The utility model provides a lower electrode device's gas-supply structure for carry semiconductor process gas, its characterized in that, gas-supply structure includes gas-supply air flue, vortex structure and a plurality of structure main part, every all be provided with a plurality of in the structure main part gas-supply air flue, same a plurality of in the structure main part gas-supply air flue is in the circumference of structure main part upwards interval sets up, and a plurality of the structure main part is in the axial of gas-supply air flue sets gradually, two adjacent in the structure main part a plurality of gas-supply air flue of structure main part with another a plurality of gas-supply air flue of structure main part is in the circumference of structure main part dislocation set, the vortex structure sets up between two adjacent structure main part, two adjacent structure main part a plurality of gas-supply air flue passes through the vortex structure intercommunication.
  20. 20. A gas delivery structure according to claim 19, wherein the structure body comprises a plurality of structure split bodies, a plurality of the structure split bodies are sleeved in sequence, a plurality of first gas grooves are formed in the peripheral wall of each structure split body, the plurality of first gas grooves are arranged at intervals in the circumferential direction of the structure split body, and a space formed by the first gas grooves in the peripheral wall of each structure split body and the inner wall of another structure split body sleeved outside the structure split body in a surrounding manner is used as the gas delivery gas passage.

Description

Gas transmission structure, lower electrode device and semiconductor process equipment Technical Field The invention relates to the technical field of semiconductors, in particular to a gas transmission structure, a lower electrode device and semiconductor process equipment. Background Currently, semiconductor processing equipment employing plasma etched wafers (Wafer) may include an upper electrode assembly, a reaction chamber, and a lower electrode assembly, which may include an electrostatic chuck, a gas delivery structure, and a ground member. In the process of etching the wafer by the plasma, the upper electrode device is loaded with an upper radio frequency and is used for ionizing reaction gas in the reaction cavity into the plasma, the lower electrode device is used for loading a lower radio frequency to the electrostatic chuck, back gas is introduced to the surface of the electrostatic chuck through the gas transmission structure, and the wafer is grounded through the grounding part, so that the wafer is suspended above the electrostatic chuck and is adsorbed by the electrostatic chuck, and the wafer is bombarded by the lower radio frequency attracting the plasma. In practical application, when the electrostatic chuck is loaded with a lower radio frequency, the electrostatic chuck and the grounding component have higher electric field intensity, so that back air is easy to strike fire in the process of flowing through the area between the electrostatic chuck and the grounding component, and when the upper radio frequency power is smaller, the plasma density in the chamber body is smaller, the induced lower radio frequency current is smaller, the direct current bias (Voltage of Direct Current, abbreviated as VDC) generated by the electrostatic chuck is larger under the same lower radio frequency power, and in a larger direct current bias environment, the back air is easier to strike fire through the area between the electrostatic chuck and the grounding component, and the back air strike fire can cause different degrees of damage to devices (such as the electrostatic chuck and the grounding component) on the back air flowing path, so that the machine is downtime, only new devices can be replaced, and a large amount of manpower and material resources are consumed. Therefore, the voltage withstand capability of the lower electrode device is critical to the stability of the semiconductor process, while the voltage withstand capability of the lower electrode device is mainly manifested in the risk of ignition of the back gas, so how to reduce or even eliminate the risk of ignition of the back gas is critical to the stability of the semiconductor process. Disclosure of Invention The invention aims at solving at least one of the technical problems in the prior art, and provides a gas transmission structure, a lower electrode device and semiconductor process equipment, which can reduce or even eliminate the risk of ignition of back gas, so that the pressure resistance of the lower electrode device can be improved, and the stability of a semiconductor process can be improved. The invention provides a gas transmission structure for transmitting semiconductor process gas, which comprises a structural main body and a plurality of gas transmission channels, wherein the gas transmission channels are arranged on the structural main body at intervals, the distance between any two points on the periphery of any section perpendicular to a first direction of the gas transmission channels is smaller than or equal to 0.5mm, and the first direction is the flowing direction of the semiconductor process gas in the gas transmission channels. Optionally, the plurality of gas transmission air flue divide into a plurality of gas transmission group, every gas transmission group all includes a plurality of gas transmission air flue, same a plurality of gas transmission air flue of gas transmission group is in the circumference interval setting of same radial dimension of structure main part, different a plurality of gas transmission air flue of gas transmission group is in the circumference interval setting of different radial dimension of structure main part. Optionally, the structure main body includes a plurality of structure components of a whole that can function independently, and a plurality of the structure components of a whole that can function independently overlaps in proper order is established every the periphery wall of structure components of a whole that can function independently all is provided with a plurality of first air tanks, and a plurality of first air tanks are in the circumference of structure components of a whole that can function independently is upwards spaced and is set up, the first air tank of each structure components of a whole that can function independently periphery wall and the cover establish another structure components of a whole that can function independently's inner wall circumfere