CN-122025498-A - Corrosion-resistant part, preparation method thereof and plasma treatment device
Abstract
The invention discloses a corrosion-resistant part, a preparation method thereof and a plasma treatment device, which comprise the steps of mixing non-oxide powder, a sintering aid and borax to obtain mixed powder, transmitting an energy beam by an energy generator to scan and irradiate the mixed powder to enable the mixed powder to be molten, stopping scanning and irradiation, solidifying to obtain a formed part body, sintering the part body, placing the part body in a reaction cavity, introducing non-oxide gas, depositing a non-oxide coating on the surface of the part body to obtain a corrosion-resistant part, wherein the non-oxide powder at least comprises any one of silicon carbide powder and silicon nitride powder, and the non-oxide gas at least comprises a silicon source precursor and a carbon source precursor or at least comprises a silicon source precursor and a nitrogen source precursor. The corrosion-resistant part has better corrosion resistance.
Inventors
- SUN XIANG
- FAN GUANGWEI
Assignees
- 中微半导体设备(上海)股份有限公司
Dates
- Publication Date
- 20260512
- Application Date
- 20241104
Claims (18)
- 1. The preparation method of the corrosion-resistant part is characterized by at least comprising the following steps: Mixing non-oxide powder, sintering aid and borax to obtain mixed powder; Providing an energy generator, wherein the energy generator emits energy beams to scan and irradiate the mixed powder so as to enable the mixed powder to be molten, stopping scanning and irradiation, and solidifying to obtain a molded part body; Sintering, namely placing the part body in a rare gas atmosphere to perform sintering operation; the method comprises the steps of depositing, namely placing the part body in a reaction cavity, introducing non-oxide gas into the reaction cavity, and depositing a non-oxide coating on the surface of the part body to obtain a corrosion-resistant part, wherein the non-oxide powder at least comprises any one of silicon carbide powder and silicon nitride powder; the non-oxide gas contains at least a silicon source precursor and a carbon source precursor, or contains at least a silicon source precursor and a nitrogen source precursor.
- 2. The method of manufacturing of claim 1, wherein the sintering aid comprises lutetium oxide and/or ytterbium oxide.
- 3. The method of claim 1, wherein the non-oxide powder has a size of less than 500nm.
- 4. The method of manufacturing a molded part according to claim 1, wherein in the molding step, a three-dimensional model of a part body is designed using computer-aided software, the three-dimensional model is decomposed into a plurality of layers, the mixed powder is added layer by layer to a printing area by using a powder feeder, the energy generator emits an energy beam to scan and irradiate the mixed powder layer by layer, so that the mixed powder of each layer is melted, the scanning irradiation is stopped, and the molded part body is obtained by curing.
- 5. The method according to claim 1, wherein in the sintering step, the sintering temperature is 2000 ℃ to 2400 ℃ and the sintering time is 5 hours to 10 hours.
- 6. The method according to claim 1, wherein the rare gas in the sintering step contains at least any one or more of argon, xenon, and helium.
- 7. The method according to claim 1, wherein the silicon source precursor comprises at least one or more of dichlorosilane, silane, and silicon tetrachloride, the carbon source precursor comprises at least one or more of methane, propane, and ethane, and the nitrogen source precursor comprises at least one of nitrogen and ammonia.
- 8. The method of manufacturing according to claim 1, wherein the energy generator comprises an electron beam generator or a laser generator.
- 9. The method of manufacturing according to claim 8, wherein the laser generator comprises any one of an ultraviolet laser, a CO 2 laser, a fiber laser, and a YAG laser.
- 10. The method of claim 1, wherein the deposition process comprises at least one of chemical vapor deposition, atomic layer deposition, and electron beam deposition.
- 11. The method of claim 1, further comprising heating the molded part body to 500 ℃ in a vacuum environment after the molding step and prior to the sintering step to remove metal ion contamination.
- 12. The method of claim 1, further comprising cleaning the corrosion resistant component after the depositing step.
- 13. The method of claim 12, wherein the method of cleaning comprises solid dry ice carbon dioxide cleaning, carbon dioxide snow cleaning, and supercritical carbon dioxide cleaning.
- 14. A corrosion-resistant component produced by the production method according to any one of claims 1 to 13, characterized by comprising: a component body made of a non-oxide matrix; a non-oxide coating on the surface of the component body; Wherein the non-oxide at least comprises any one of silicon carbide or silicon nitride; the material of the non-oxide substrate is the same as that of the non-oxide coating.
- 15. The corrosion-resistant component of claim 14, wherein said non-oxide matrix has a resistivity of from 50 Ω -cm to 70 Ω -cm.
- 16. The corrosion-resistant component of claim 14, wherein the non-oxide substrate has a thickness of 10mm to 50mm and the non-oxide coating has a thickness of 100 μm to 300 μm.
- 17. The corrosion-resistant component of claim 14, wherein said corrosion-resistant component comprises at least one of a confinement ring, a gas showerhead, an upper ground ring, a lower ground ring, a gas distribution plate, and an insulator ring.
- 18. A plasma processing apparatus, wherein the plasma processing apparatus at least comprises the corrosion resistant component according to any one of claims 14 to 17.
Description
Corrosion-resistant part, preparation method thereof and plasma treatment device Technical Field The invention relates to the technical field of semiconductors, in particular to a corrosion-resistant part, a preparation method thereof and a plasma treatment device. Background Etching equipment is equipment used for precisely removing materials in specific areas on a silicon wafer in the semiconductor manufacturing process, such as Capacitive Coupled Plasma (CCP) etching equipment and Inductive Coupled Plasma (ICP) etching equipment. But in high power (10000 watts above) plasma environments, critical semiconductor components in these etching equipment are susceptible to corrosion. Currently, in order to improve the corrosion resistance of these semiconductor components, a thermal spraying process is generally used to coat a layer of yttrium oxide on the surface of the aluminum metal or anodized layer of these semiconductor components. However, the thermal spraying process has many defects such as coverage rate problem, metal pollution problem, porosity problem and the like, so that the coating of the semiconductor part prepared by the process cannot play a role in corrosion resistance in a plasma environment, especially in a high-power environment, and further the performance and the product yield of the semiconductor part are affected. Disclosure of Invention The invention aims to overcome the defect of poor corrosion resistance of the semiconductor part prepared by the existing preparation method so as to meet the corrosion resistance requirement in a high-power plasma environment. In order to achieve the above object, the present invention provides a method for manufacturing a corrosion-resistant component, at least comprising: Mixing non-oxide powder, sintering aid and borax to obtain mixed powder; Providing an energy generator, wherein the energy generator emits energy beams to scan and irradiate the mixed powder so as to enable the mixed powder to be molten, stopping scanning and irradiation, and solidifying to obtain a molded part body; Sintering, namely placing the part body in a rare gas atmosphere to perform sintering operation; the deposition step is that the part body is placed in a reaction cavity, non-oxide gas is introduced into the reaction cavity, and a non-oxide coating is deposited on the surface of the part body, so that the corrosion-resistant part is obtained; wherein the non-oxide powder at least comprises any one of silicon carbide powder and silicon nitride powder; the non-oxide gas contains at least a silicon source precursor and a carbon source precursor, or contains at least a silicon source precursor and a nitrogen source precursor. Optionally, the sintering aid comprises lutetium oxide and/or ytterbium oxide. Optionally, the size of the non-oxide powder is less than 500nm. Optionally, in the forming step, a three-dimensional model of the part body is designed by using computer-aided software, the three-dimensional model is decomposed into multiple layers, the mixed powder is added layer by layer to a printing area by using a powder feeder, the energy generator emits energy beams to scan and irradiate the mixed powder layer by layer, so that the mixed powder of each layer is melted, scanning irradiation is stopped, and the formed part body is obtained after solidification. Optionally, in the sintering step, the sintering temperature is 2000-2400 ℃ and the sintering time is 5-10 h. Optionally, in the sintering step, the rare gas at least includes any one or more of argon, xenon, and helium. Optionally, the silicon source precursor at least comprises any one or more of dichlorosilane, silane and silicon tetrachloride, the carbon source precursor at least comprises any one or more of methane, propane and ethane, and the nitrogen source precursor at least comprises any one of nitrogen and ammonia. Optionally, the energy generator comprises an electron beam generator or a laser generator. Optionally, the laser generator includes any one of an ultraviolet laser, a CO 2 laser, a fiber laser, and a YAG laser. Optionally, the deposition process at least includes any one of chemical vapor deposition, atomic layer deposition and electron beam deposition. Optionally, after the molding step and before the sintering step, the method further comprises heating the molded part body to 500 ℃ in a vacuum environment to remove metal ion contamination. Optionally, after the depositing step, cleaning the corrosion resistant component. Optionally, the cleaning method comprises solid dry ice carbon dioxide cleaning, carbon dioxide snow cleaning and supercritical carbon dioxide cleaning. The invention also provides a corrosion-resistant part prepared by the preparation method, which comprises the following steps: a component body made of a non-oxide matrix; a non-oxide coating on the surface of the component body; Wherein the non-oxide at least comprises any one of silicon carbide or silicon nitride; the