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CN-122026109-A - Microstrip patch antenna working in satellite communication ground receiving end frequency band

CN122026109ACN 122026109 ACN122026109 ACN 122026109ACN-122026109-A

Abstract

The invention discloses a microstrip patch antenna working in a satellite communication ground receiving end frequency band, and belongs to the technical field of antennas. The antenna comprises a microstrip radiation layer, a first dielectric substrate, an upper microstrip feed network, a second dielectric substrate, a metal grounding plate, a third dielectric substrate and a lower microstrip feed network which are tightly attached from top to bottom in sequence. The antenna works in the frequency band of 17.7 GHz-21.2 GHz, and can realize that S11 and S21 parameters are lower than-10 dB and the axial ratio is lower than 2 in the frequency band of 17.7 GHz-21.2 GHz, and the antenna adopts two-way signal feed with equal amplitude and 90 DEG phase difference and has the advantages of small volume, light weight, easy conformal operation, low cost and the like.

Inventors

  • QI MING
  • WANG XIAOHUA

Assignees

  • 电子科技大学

Dates

Publication Date
20260512
Application Date
20260319

Claims (5)

  1. 1. The microstrip patch antenna working in the frequency band of the satellite communication ground receiving end is characterized by comprising a microstrip radiation layer, a first dielectric substrate, an upper microstrip feed network, a second dielectric substrate, a metal grounding plate, a third dielectric substrate and a lower microstrip feed network which are tightly attached from top to bottom in sequence; The microstrip radiation layer comprises a radiation patch and parasitic patches, wherein the radiation patch is a square patch which is arranged in a shape of 2  & lt 2 & gt, the edge of the radiation patch is parallel to the edge of the first dielectric substrate and is positioned at the center of the upper surface of the first dielectric substrate; The upper layer microstrip feed network is a tuning fork microstrip feed line and extends inwards from the edge of the upper surface of the second dielectric substrate, the metal grounding plate is etched with a cross-shaped groove at the center position on the basis of fully covering the lower surface of the second dielectric substrate, and the lower layer microstrip feed network and the upper layer microstrip feed network are identical in structure and are perpendicular to each other at 90 degrees.
  2. 2. The microstrip patch antenna of claim 1, wherein two paths of signals with equal amplitude and 90 degrees phase difference are adopted between the upper microstrip feed network and the lower microstrip feed network to feed, and an excitation source is provided for the radiation patch, so that circular polarization excitation is achieved.
  3. 3. The microstrip patch antenna according to claim 1, wherein the radiating patch and the parasitic patch have a side length of 0.11λ -0.13λ, where λ is a wavelength of a central operating frequency of the antenna.
  4. 4. The first medium substrate is made of MW-3350 material, and the second medium substrate and the third medium substrate are made of Roges-5880 material. The first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the metal grounding plate are square with equal side lengths, the thickness of the first dielectric substrate is 0.05λ -0.06λ, the thickness of the second dielectric substrate is 0.004 λ -0.0048λ, the thickness of the third dielectric substrate is 0.0036λ -0.0043λ, and λ is the wavelength of the central working frequency of the antenna.
  5. 5. The microstrip radiation layer is characterized by determining the structure size by a characteristic model analysis method, and the specific process is as follows: Firstly, carrying out characteristic mode analysis on a single-radiation patch antenna structure, and analyzing mode significance curves of a TM 10-like mode, a TM 01-like mode, a TM 11-like mode and a TM 20-like mode, wherein only the TM 10-like mode and the TM 01-like mode can be excited and are combined modes in the range of an antenna working frequency band, and the two modes can be synthesized into circularly polarized excitation radiation, but only one radiation frequency point capable of exciting circular polarization exists, so that broadband radiation cannot be realized; Dividing a single radiation patch to obtain a2 multiplied by 2 small radiation patch array, analyzing mode significance curves of four modes with the lowest frequency, and finding out that more resonance modes appear in the working frequency band range of the antenna, wherein only a mode similar to a TM10 mode and a mode similar to a TM01 mode are a merger mode, and the rest modes can not meet the requirement of circular polarization radiation; parasitic patches are added around the radiation patches, and the analysis mode significance curve is observed, so that two pairs of merging modes, namely a TM 10-like mode, a TM 01-like mode, a TM 12-like mode and a TM 21-like mode, exist in the range of an antenna working frequency band, and broadband circularly polarized radiation can be realized after the excitation.

Description

Microstrip patch antenna working in satellite communication ground receiving end frequency band Technical Field The invention belongs to the technical field of antennas, and particularly relates to a microstrip patch antenna working in a satellite communication ground receiving end frequency band. Background With the continuous development of modern communication technology, the traditional C/Ku wave band is used as a main working frequency band of satellite communication, the dilemma of gradually saturating spectrum resources is gradually faced in the present year, and in order to meet the requirements of the 5G/6G era on ultra-high speed and ultra-large capacity, the K/Ka wave band is used as the frequency band of satellite communication. Microstrip patch antennas have become a research hotspot for satellite communication ground receiving terminals by virtue of their low profile, small size, light weight, easy conformality, low cost, and the like. However, the conventional microstrip patch antenna has a narrow bandwidth, is difficult to cover the downlink receiving frequency band of modern satellite communication, and the multilayer stacked structure adopted for widening the bandwidth can improve the performance, but obviously increases the profile height, the manufacturing cost and the debugging difficulty. Therefore, how to design a circularly polarized microstrip patch antenna which has compact structure, low profile, can realize high gain and good radiation performance in a specific frequency band of satellite communication ground reception, and is easy to manufacture and integrate has become one of important directions of circularly polarized antennas in the field. Disclosure of Invention The invention aims to overcome the defects of the prior art and provide a microstrip patch antenna working in a satellite communication ground receiving end frequency band. The technical problems proposed by the invention are solved as follows: a microstrip patch antenna working in a satellite communication ground receiving end frequency band comprises a microstrip radiation layer, a first dielectric substrate, an upper microstrip feed network, a second dielectric substrate, a metal grounding plate, a third dielectric substrate and a lower microstrip feed network which are tightly attached from top to bottom in sequence; The microstrip radiation layer comprises a radiation patch and parasitic patches, wherein the radiation patch is a square patch which is arranged in a 2x2 manner, the edge of the radiation patch is parallel to the edge of the first dielectric substrate and is positioned at the center of the upper surface of the first dielectric substrate; The upper layer microstrip feed network is a tuning fork microstrip feed line and extends inwards from the edge of the upper surface of the second dielectric substrate, the metal grounding plate is etched with a cross-shaped groove at the center position on the basis of fully covering the lower surface of the second dielectric substrate, and the lower layer microstrip feed network and the upper layer microstrip feed network are identical in structure and are perpendicular to each other at 90 degrees. Furthermore, two paths of signals with equal amplitude and 90 degrees of phase difference are adopted between the upper layer microstrip feed network and the lower layer microstrip feed network to feed, and an excitation source is provided for the radiation patch, so that circular polarization excitation is achieved. Furthermore, the side lengths of the radiating patch and the parasitic patch are 0.11λ -0.13λ, and λ is the wavelength of the central working frequency of the antenna. Further, the first dielectric substrate is made of MW-3350 material, and the second dielectric substrate and the third dielectric substrate are made of Roges-5880 material. The first dielectric substrate, the second dielectric substrate, the third dielectric substrate and the metal grounding plate are square with equal side lengths, the thickness of the first dielectric substrate is 0.05λ -0.06λ, the thickness of the second dielectric substrate is 0.004 λ -0.0048λ, the thickness of the third dielectric substrate is 0.0036λ -0.0043λ, and λ is the wavelength of the central working frequency of the antenna. Further, the microstrip radiation layer is characterized by determining the structure size by a characteristic model analysis method, and the specific process is as follows: Firstly, carrying out characteristic mode analysis on a single-radiation patch antenna structure, analyzing mode significance curves of four modes with lowest frequency, and finding that only two modes with lowest frequency can be excited and are combined modes in the range of an antenna working frequency band, wherein the two modes can be synthesized into circularly polarized excitation radiation, but only one radiation frequency point capable of exciting the circularly polarization exists, and broadband radiation canno