CN-122026117-A - Multilayer absorption integrated frequency selective wave absorber based on double-loss layer and preparation method

CN122026117ACN 122026117 ACN122026117 ACN 122026117ACN-122026117-A

Abstract

The invention provides a multilayer absorption integrated frequency selective absorber based on a double-loss layer and a preparation method thereof, and belongs to the technical field of functional materials. The structure comprises a first loss layer, a second loss layer and two bandpass frequency selective surface layers which are sequentially laminated from top to bottom. Wherein, every two layers of air layer medium with certain thickness are arranged between each two layers. Each loss layer adopts I-shaped derivative metal patterns and loads resistors, different frequency impedance matching is realized through differential resistor configuration, ultra-wideband wave absorption is realized, the bandpass frequency selective surface layer adopts cross slotting metal patterns, second-order bandpass response is formed through double-layer coupling, and low insertion loss wave transmission and high-selectivity filtering are realized. The structure has the advantages of wide wave absorption bandwidth, low wave transmission insertion loss, good selectivity and the like, and is suitable for an ultra-wideband radar stealth system. The working range covers the S-Ku wave band, the whole thickness is thinner, the experimental and simulation results are consistent, and the method has application potential in the aspects of radar stealth, electromagnetic compatibility and the like.

Inventors

WENG XIAOLONG
LIU SHIJIN
BI MEI
LUO WEI
LI ZHIMING
LIAO MING

Assignees

电子科技大学

Dates

Publication Date: 20260512
Application Date: 20260327

Claims (9)

1. The multilayer absorption integrated frequency selective absorber based on the double-loss layer is characterized by comprising a first loss layer, a second loss layer, a first band-pass frequency selective surface layer and a second band-pass frequency selective surface layer which are sequentially laminated from top to bottom, wherein a first air layer is arranged between the first loss layer and the second loss layer, a second air layer is arranged between the second loss layer and the first band-pass frequency selective surface layer, and a third air layer is arranged between the first band-pass frequency selective surface layer and the second band-pass frequency selective surface layer; The first layer loss layer comprises a first layer loss layer dielectric substrate, a first layer loss layer upper layer metal patch (3) arranged on the upper surface (1) of the first layer loss layer dielectric substrate and a first layer loss layer lower layer metal patch (6) arranged on the lower surface (4) of the first dielectric substrate, wherein the first layer loss layer upper layer metal patch (3) and the first layer loss layer lower layer metal patch (6) are both I-shaped metal patterns loaded with resistors; The second-layer loss layer comprises a second-layer loss layer dielectric substrate, a second-layer loss layer upper-layer metal patch (9) arranged on the upper surface (7) of the second-layer loss layer dielectric substrate and a second-layer loss layer lower-layer metal patch (12) arranged on the lower surface (10) of the second-layer loss layer dielectric substrate, wherein the second-layer loss layer upper-layer metal patch (9) and the second-layer loss layer lower-layer metal patch (12) are both I-shaped metal patterns loaded with resistors; The first bandpass frequency selective surface layer comprises a first bandpass frequency selective surface layer dielectric substrate (13) and a first bandpass frequency selective surface layer metal patch (14) arranged on the upper surface of the first bandpass frequency selective surface layer dielectric substrate (13); The second band-pass frequency selective surface layer comprises a second band-pass frequency selective surface layer dielectric substrate (15) and a second band-pass frequency selective surface layer metal patch (16) arranged on the upper surface of the second band-pass frequency selective surface layer dielectric substrate (15).
2. The multilayer absorption integrated frequency selective absorber based on the double-loss layer according to claim 1, wherein the first-layer loss layer upper metal patch (3), the first-layer loss layer lower metal patch (6), the second-layer loss layer upper metal patch (9) and the second-layer loss layer lower metal patch (12) respectively comprise two I-shaped metal patterns, each I-shaped metal pattern respectively comprises a transverse metal arm and a longitudinal metal arm arranged in the middle of the transverse metal arm, a resistor is loaded on the longitudinal metal arm, the connecting line direction between the two resistors of the two I-shaped metal patterns is longitudinal, and the connecting line direction perpendicular to the connecting line direction is transverse.
3. The multilayer absorption integrated frequency selective absorber based on the double-loss layer according to claim 1, wherein the resistances of the resistors on the first-layer loss layer upper metal patch (3) and the first-layer loss layer lower metal patch (6) are 150 omega, the resistances of the resistors on the second-layer loss layer upper metal patch (9) and the second-layer loss layer lower metal patch (12) are 200 omega, and the impedance matching of the first-layer loss layer and the second-layer loss layer in the respective frequency bands is realized through differential resistor configuration.
4. The multilayer absorption integrated frequency selective absorber based on a double-loss layer according to claim 1, wherein the first layer bandpass frequency selective surface layer metal patch (14) and the second layer bandpass frequency selective surface layer metal patch (16) are cross slotted metal patterns, the cross slotted metal patterns comprise square metal patches and cross-shaped gaps formed in the centers of the square metal patches, the double-layer cross slotted metal patterns form second-order bandpass response through electromagnetic coupling of a second air layer, two transmission poles are generated in a wave transmission frequency band, and the wave transmission bandwidth and insertion loss are widened.
5. The multilayer absorption integrated frequency selective absorber based on a double-loss layer according to claim 1, wherein the material relative dielectric constants of the first-layer loss layer dielectric substrate and the second-layer loss layer dielectric substrate are 3.48, and the material relative dielectric constants of the first-layer bandpass frequency selective surface layer dielectric substrate and the second-layer bandpass frequency selective surface layer dielectric substrate are 2.2.
6. The multilayer integrated frequency selective absorber according to claim 1 wherein the first and second bandpass frequency selective surface layers have a cell period of 12 mm, the first air layer has a thickness of 4.75: 4.75 mm, the second air layer has a thickness of 6.00: 6.00 mm, and the third air layer has a thickness of 5.90: 5.90 mm.
7. The multilayer absorption integrated frequency selective absorber based on a double-loss layer according to claim 1, wherein the first loss layer, the second loss layer, the first band-pass frequency selective surface layer and the second band-pass frequency selective surface layer are made of one of copper, aluminum, gold and silver.
8. The multilayer integrated frequency selective absorber based on a double-loss layer according to claim 1, wherein the first air layer to the third air layer are made of one of polymethacrylimide foam, polyimide foam, polyurethane foam, polyvinyl chloride foam, phenolic foam, polyethylene foam and polyethylene terephthalate plastic.
9. The method for manufacturing a multilayer absorption-transmission integrated frequency selective absorber based on a double-loss layer according to any one of claims 1 to 8, characterized by comprising the steps of: ① Selecting a substrate material, pre-plating a lead-tin corrosion-resistant layer on a multi-fractal structure part by using a printed circuit board process, and then chemically corroding other metals which are not pre-plated with the lead-tin corrosion-resistant layer to prepare a first loss layer, a second loss layer, a first band-pass frequency selective surface layer and a second band-pass frequency selective surface layer respectively; ② Soldering the chip resistor at the designated positions of the first to fourth metal patch layers by adopting a soldering method; ③ Selecting dielectric materials, and sequentially splicing all layers of materials into a whole; ④ Finally, the multilayer absorption integrated frequency selective absorber based on the double-loss layer coupling is obtained through clipping and shaping.

Description

Multilayer absorption integrated frequency selective wave absorber based on double-loss layer and preparation method Technical Field The invention belongs to the technical field of functional materials, and particularly relates to a multilayer absorption integrated frequency selective wave absorber based on a double-loss layer and a preparation method thereof, which can be used in the fields of radar radomes, stealth antenna systems, electromagnetic compatibility and the like. Background With the continuous development of radar detection technology, the electromagnetic working platform has higher requirements on the stealth performance of an electromagnetic structure. The absorption-transmission integrated frequency selection surface can realize low-loss wave transmission in the working frequency band of the antenna, and meanwhile, high-efficiency wave absorption is realized in the out-of-band frequency band, so that the scattering cross sections of the double-station radar and the multi-station radar are effectively reduced, and the electromagnetic stealth field is a research hot spot. The existing frequency selective surface integrating wave absorption and transmission can be divided into three types of wave absorption and wave transmission type and wave absorption and wave transmission type according to functions. However, the conventional absorption-integrated FSR generally has the problem of narrow absorption bandwidth. Studies have shown that single-layer lossy layers can only produce a single absorption band, and their relative bandwidths are often difficult to exceed 50% and do not meet the stealth requirements of ultra-wideband radar systems. At present, the design of a low-scattering wave-transmitting structure is mainly focused on S, C, X frequency bands, so that the design cannot meet the increasing demands of high-frequency bands. Therefore, research on a low scattering wave-transparent structure of the Ku band has urgent practical significance. In order to expand the wave-absorbing bandwidth, an attempt is made to adopt a double-loss layer structure, and broadband absorption is formed by superposing wave-absorbing at two different frequency bands respectively. However, most of the existing loss layer designs adopt a single loss layer or are formed by overlapping two simple layers, so that the connection between two absorption bands is poor, the reflection coefficient is often raised in the middle frequency band, and the actual ultra-wideband absorption is difficult to realize. In addition, the bandpass frequency selective surface layer of the existing structure mostly adopts a single-layer design, the selectivity of a wave-transparent window is poor, the transition band is wider, and the stealth efficiency is weakened. Meanwhile, when broadband wave absorption and low insertion loss wave transmission are realized, the existing structure often needs complex multi-layer medium stacking, so that the section height is increased, the processing difficulty is increased, and the application of the structure in a lightweight platform is limited. Currently, most low-scattering wave-transmitting structures of the disclosed design are concentrated in S, C, X frequency bands, ku wave bands with higher frequencies are difficult to cover, and the defects of larger unit size, narrower transmission bandwidth or overlarge insertion loss, narrower low-scattering bandwidth and the like exist. This not only increases the manufacturing cost, but also limits its application in the fields of multi-band satellite communications and the like. Therefore, designing and preparing a low-scattering wave-transparent structure working in the S-Ku ultra-wideband range and having excellent angle stability, low section thickness, small cell size, small insertion loss and wide bandwidth is an important work in the field. Disclosure of Invention Aiming at the problems of narrow bandwidth and poor selectivity of wave absorption in the prior art, the invention provides a multilayer wave absorption integrated frequency selective surface structure based on cooperative coupling of double-loss layers, and the cooperative optimization of ultra-wideband wave absorption and low insertion loss wave transmission is realized through differential design of the double-loss layers and interlayer coupling regulation and control. In order to achieve the aim of the invention, the invention adopts the following technical scheme: the multilayer absorption integrated frequency selective absorber based on the double-loss layer comprises a first loss layer, a second loss layer, a first band-pass frequency selective surface layer and a second band-pass frequency selective surface layer which are sequentially laminated from top to bottom, wherein a first air layer is arranged between the first loss layer and the second loss layer, a second air layer is arranged between the second loss layer and the first band-pass frequency selective surface layer, and a