CN-122026215-A - High-power U-shaped microcrystalline laser

CN122026215ACN 122026215 ACN122026215 ACN 122026215ACN-122026215-A

Abstract

The invention provides a high-power U-shaped microcrystalline laser, which relates to the technical field of lasers, wherein a U-shaped resonant cavity is arranged in a rectangular frame, openings at two ends of the U-shaped resonant cavity are positioned on a first side face of the rectangular frame, reflecting mirrors are respectively arranged at two openings and two corners of the U-shaped resonant cavity, two anodes are symmetrically arranged on a second side face and a fourth side face of the rectangular frame, and a cathode is positioned between two side edges of the U-shaped resonant cavity and communicated with the bottom edge of the U-shaped resonant cavity. Under the same resonant cavity length, the U-shaped resonant cavity can change the linear resonant cavity into three cavities with three lengths, and the length of each cavity is greatly reduced, so that the processing difficulty is reduced. Compared with a linear resonant cavity, the U-shaped resonant cavity has the advantages that the length is greatly shortened, and the structure is more compact. And the distance between the cathode and the anode of the laser is doubled, the voltage required by starting the laser is reduced by more than half, the high-voltage protection requirement of the laser is reduced, and the operation safety of the laser is improved.

Inventors

DONG HONGCHENG
LI WENBO
WANG LIBIN
PAN ZHIXIN
LIU XINGHUA
WANG LINHU

Assignees

天津集智航宇科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260401

Claims (10)

1. The high-power U-shaped microcrystalline laser is characterized by comprising a rectangular frame (1), a cathode (3), an anode (2) and a reflecting mirror (6), wherein four sides of the rectangular frame (1) are a first side (11), a second side (12), a third side (13) and a fourth side (14) respectively, a U-shaped resonant cavity (4) is arranged in the rectangular frame (1), openings at two ends of the U-shaped resonant cavity (4) are positioned on the first side (11) of the rectangular frame (1), and working gas is filled in the U-shaped resonant cavity (4); The four reflectors (6) are arranged, and the four reflectors (6) irradiate towards the U-shaped resonant cavity (4) and are respectively arranged at two openings and two corners of the U-shaped resonant cavity (4); the two anodes (2) are symmetrically arranged on the second side face (12) and the fourth side face (14) of the rectangular frame (1) and are respectively communicated with two side edges (41) of the U-shaped resonant cavity (4); the cathode (3) is located between two side edges (41) of the U-shaped resonant cavity (4) and at least partially arranged in the rectangular frame (1), and the cathode (3) is communicated with the bottom edge (42) of the U-shaped resonant cavity (4).
2. A high power U-shaped microcrystalline laser according to claim 1, characterized in that the rectangular frame (1) is made of microcrystalline glass material and the reflecting mirror (6) is made of a material with a low expansion coefficient.
3. The high-power U-shaped microcrystalline laser according to claim 2, wherein the rectangular frame (1) is provided with a containing cavity (5), the containing cavity (5) is arranged between two side edges (41) of the U-shaped resonant cavity (4) and has the same opening direction as the opening direction of the U-shaped resonant cavity (4), the cathode (3) is at least partially arranged in the containing cavity (5), and the opening of the cathode (3) and the opening of the containing cavity (5) are welded through indium sealing so as to seal the opening of the containing cavity (5).
4. The high-power U-shaped microcrystalline laser according to claim 3, wherein the cathode (3) is of a split structure, the cathode (3) comprises a cathode base body (31) and a cathode cover plate (32), the cathode (3) is of a cylindrical structure with one end closed, the closed end is of a hemispherical structure, the cathode base body (31) is arranged in the accommodating cavity (5), the cathode cover plate (32) is arranged at the opening of the accommodating cavity (5), the cathode cover plate (32) and the rectangular frame (1) are welded through indium sealing, and the cathode base body (31) and the cathode cover plate (32) are electrically connected.
5. A high-power U-shaped microcrystalline laser according to claim 3, wherein the cathode (3) is of an integral cylindrical structure with two closed ends, one closed end is of a planar structure, the other closed end is of a hemispherical structure, a hem (33) extending outwards is arranged in the circumference of the hemispherical closed end, the closed end of the planar structure of the cathode (3) extends into the accommodating cavity (5), the closed end of the hemispherical structure is arranged outside the accommodating cavity (5), and the hem (33) is positioned at an opening outside the accommodating cavity (5) and is welded with the rectangular frame (1) through indium sealing.
6. The high-power U-shaped microcrystalline laser according to claim 1, wherein a first channel (8) is arranged at each of the two anodes (2) of the rectangular frame (1), one end of the first channel (8) is communicated with the corresponding anode (2), the other end of the first channel is communicated with the side edge (41) of the U-shaped resonant cavity (4), a second channel (9) is arranged at the cathode (3) of the rectangular frame (1), one end of the second channel (9) is communicated with the bottom edge (42) of the U-shaped resonant cavity (4), and the other end of the second channel is communicated with the cathode (3).
7. The high-power U-shaped microcrystalline laser according to claim 1, further comprising a getter (10), wherein a groove is formed in the rectangular frame (1), the bottom of the groove is communicated with the U-shaped resonant cavity (4), the getter (10) is arranged in the groove, and a sealing cover plate (16) is arranged at the opening of the groove.
8. The high-power U-shaped microcrystalline laser according to claim 1, wherein four reflecting mirrors (6) are respectively a first reflecting mirror (61), a second reflecting mirror (62), a third reflecting mirror (63) and a fourth reflecting mirror (64), the first reflecting mirror (61) and the fourth reflecting mirror (64) are respectively arranged at two openings of the U-shaped resonant cavity (4), the second reflecting mirror (62) and the third reflecting mirror (63) are respectively arranged at two corners of the U-shaped resonant cavity (4), the first reflecting mirror (61) is an output mirror, the transmittance of the first reflecting mirror (61) is 100ppm-10000ppm, the transmittance of the second reflecting mirror (62), the third reflecting mirror (63) and the fourth reflecting mirror (64) is less than 20ppm, and the first reflecting mirror (61), the second reflecting mirror (62), the third reflecting mirror (63) and the fourth reflecting mirror (64) are respectively concave or spherical reflecting mirrors.
9. A high power U-shaped microcrystalline laser according to claim 1, characterized in that both sides (41) of the U-shaped resonator (4) are at an angle of 90 ° to the bottom side (42).
10. The high-power U-shaped microcrystalline laser according to claim 1, further comprising two gas storage holes (7), wherein the two gas storage holes (7) are respectively arranged at two corners of the U-shaped resonant cavity (4) and are opposite to the reflecting mirror (6) at the corners, and the gas storage holes (7) are communicated with the U-shaped resonant cavity (4).

Description

High-power U-shaped microcrystalline laser Technical Field The invention relates to the technical field of lasers, in particular to a high-power U-shaped microcrystalline laser. Background Helium-neon lasers, as a classical gas laser, have established their unique irreplacements in demanding precision measurement and scientific fields with their excellent beam quality, extremely high stability and reliable performance. The frequency stability of the laser directly determines the precision of precise measurement, and is a core index of laser measurement. According to the laser principle v=mc/(nL), v is the frequency, C is the speed of light, M is a certain integer, n is the refractive index of the gas, and L is the relative position length of the helium-neon laser mirror. This means that the frequency variation is caused by the relative length of the mirrors and the variation of the refractive index of the gas in the cavity. The helium-neon laser based on zero-expansion microcrystalline glass as a cavity of the resonant cavity effectively improves the frequency stability, the resonant cavity of the laser is very precise, the diameter of a discharge tube is usually only 0.6-3 mm, the length of the discharge tube is 50-300 mm, the discharge tube of the resonant cavity can only be milled and ground by adopting a slender diamond drill bit on a machine tool rotating at a high speed at present, and the error of a hole is larger and larger along with the increase of the processing length. At present, the laser is limited by the machining precision of a resonant cavity, the diameter of a discharge tube cannot be further reduced, and the length of the discharge tube is also greatly limited, so that the power of the laser cannot be further improved. Disclosure of Invention The invention aims to provide a high-power U-shaped microcrystalline laser, which effectively solves the problem that the power of the existing laser cannot be further improved. In order to solve the problems, the invention discloses a high-power U-shaped microcrystalline laser which comprises a rectangular frame, a cathode, an anode and a reflecting mirror, wherein four side surfaces of the rectangular frame are a first side surface, a second side surface, a third side surface and a fourth side surface respectively, a U-shaped resonant cavity is arranged in the rectangular frame, openings at two ends of the U-shaped resonant cavity are positioned on the first side surface of the rectangular frame, and working gas is filled in the U-shaped resonant cavity; The four reflectors are arranged, irradiate towards the U-shaped resonant cavity and are respectively arranged at two openings and two corners of the U-shaped resonant cavity; the anodes are symmetrically arranged on the second side face and the fourth side face of the rectangular frame and are respectively communicated with two side edges of the U-shaped resonant cavity; the cathode is positioned between two side edges of the U-shaped resonant cavity and at least partially arranged in the rectangular frame, and the cathode is communicated with the bottom edge of the U-shaped resonant cavity. Optionally, the rectangular frame is made of microcrystalline glass, and the reflecting mirror is made of a material with a low expansion coefficient. Optionally, a containing cavity is arranged on the rectangular frame, the containing cavity is arranged between two side edges of the U-shaped resonant cavity, the opening direction of the containing cavity is the same as that of the U-shaped resonant cavity, the cathode is at least partially arranged in the containing cavity, and the opening of the cathode and the opening of the containing cavity are sealed and welded through indium so as to seal the opening of the containing cavity. Optionally, the cathode is of a split structure and comprises a cathode substrate and a cathode cover plate, the cathode is of a cylindrical structure with one end closed, the closed end is of a hemispherical structure, the cathode substrate is arranged in the accommodating cavity, the cathode cover plate is arranged at the opening of the accommodating cavity, the cathode cover plate and the rectangular frame are welded in a sealing mode through indium, and the cathode substrate is electrically connected with the cathode cover plate. Optionally, the cathode is of an integral cylindrical structure with two closed ends, one closed end is of a planar structure, the other closed end is of a hemispherical structure, a folded edge extending outwards is arranged on the periphery of the hemispherical closed end, the closed end of the planar structure of the cathode extends into the accommodating cavity, the closed end of the hemispherical structure is arranged outside the accommodating cavity, and the folded edge is positioned at an opening outside the accommodating cavity and is welded with the rectangular frame in a sealing manner through indium. Optionally, a first channel is arranged