CN-122026220-A - On-chip integrated laser device and preparation method thereof

CN122026220ACN 122026220 ACN122026220 ACN 122026220ACN-122026220-A

Abstract

The invention discloses an on-chip integrated laser device and a preparation method thereof, belonging to the field of semiconductor lasers, wherein the device takes an SOI wafer as a substrate, integrates an optical resonant cavity, a waveguide coupling structure, an electric pumping structure, a gain medium and a temperature control module, wherein the resonant cavity is of a P/N lightly doped one-dimensional periodic structure, is divided into a resonant region, a total reflection region and a partial reflection region, the electric pumping structure is provided with four electrodes, can apply alternating current and direct current voltages to realize non-contact pumping and resistance heating, and the temperature control module forms closed loop temperature control with an external circuit through a beam splitter, a germanium-based optical detector. The preparation method is based on a silicon-based micro-nano processing technology, and is completed through the steps of photoetching, ion implantation, insulating layer deposition, gain medium integration, electrode preparation and the like, and the photodetector technology is combined with the main flow. The invention has compact structure, high integration level, compatibility with CMOS technology, high electric pumping efficiency, low laser working energy consumption, accurate temperature control and stable working, and is suitable for large-scale photoelectric integration scenes.

Inventors

WANG ZHEN
ZHANG WENXI
LIN HAOXIANG
YAN SHUYE
Ning Cunzheng

Assignees

深圳技术大学

Dates

Publication Date: 20260512
Application Date: 20260408

Claims (10)

1. The on-chip integrated laser device is characterized by comprising an SOI wafer, an optical resonant cavity, a waveguide coupling structure, an electric pumping structure and a gain medium, wherein the optical resonant cavity is arranged on a silicon layer at the top of the SOI wafer, the gain medium is arranged above the optical resonant cavity, the optical resonant cavity is of a one-dimensional periodic structure and is electrically connected with the electric pumping structure and used for optical feedback, wavelength selection and voltage conduction, the gain medium is a direct band gap semiconductor film and is arranged in an insulating and isolating mode with the optical resonant cavity, the electric pumping structure is used for forming a high-frequency alternating electric field in the direction parallel to the gain medium to realize non-contact electric pumping, and the waveguide coupling structure is connected with the optical resonant cavity and used for laser output coupling.
2. The integrated laser device of claim 1, wherein the optical resonator is formed of two or more sets of silicon strips that cross each other, the two or more sets of silicon strips being ion implanted to form P-type lightly doped regions and N-type lightly doped regions, respectively.
3. The integrated laser device as claimed in claim 2, wherein the optical resonator forms a resonance region, a total reflection region and a partial reflection region by varying a period interval, the resonance region being located in a middle portion, the total reflection region and the partial reflection region being located at side portions of the resonance region, respectively, and the waveguide coupling structure is connected to the partial reflection region.
4. The integrated laser device on a chip of claim 1, wherein an insulating spacer layer is disposed between the gain medium and the optical resonator, and an outer portion of the gain medium is covered with an insulating cladding.
5. The integrated laser device on a chip of claim 4, wherein the insulating isolation layer is a SiO 2 layer or a h-BN layer, the insulating cladding is a SiO 2 layer, and the thickness of the insulating cladding is 3-5 μm.
6. The integrated laser device on a chip of claim 4, wherein the gain medium is a group III-V semiconductor material film or a two-dimensional van der waals semiconductor material film.
7. The integrated laser device as claimed in claim 3, wherein the electrical pumping structure comprises a P-type heavily doped region, an N-type heavily doped region, and a metal electrode, the P-type heavily doped region and the N-type heavily doped region are respectively disposed on two sides of the optical resonant cavity and are in one-to-one correspondence with more than two groups of silicon strips and electrically connected with each other, and the metal electrode is electrically connected with the P-type heavily doped region and the N-type heavily doped region and is used for applying a high-frequency alternating voltage.
8. The integrated laser device on a chip of claim 7, wherein the number of metal electrodes is four, two of the metal electrodes being adjacent to the resonant region and two of the other metal electrodes respectively surrounding the two metal electrodes adjacent to the resonant region.
9. The integrated laser device of claim 1, further comprising a temperature regulation module coupled to the electrical pumping structure for regulating a local temperature of the integrated laser device on the chip, the temperature regulation module comprising a beam splitter, a light detector, and an external control circuit.
10. A method of fabricating an integrated laser device on a chip, comprising the steps of: s1, manufacturing an optical resonant cavity, a waveguide coupling structure and a heavily doped region of an electric pumping structure on a silicon layer at the top of an SOI crystal dome; S2, performing ion implantation by taking photoresist as a mask, forming a P-type heavily doped region and an N-type heavily doped region in the heavily doped region, respectively forming a P-type lightly doped region and an N-type lightly doped region on more than two groups of silicon strips of the optical resonant cavity, and removing the photoresist; S3, depositing an insulating material, and integrating a gain medium film above a resonance area of the optical resonant cavity after chemical mechanical polishing; s4, carrying out graphic processing on the gain medium film, depositing an insulating cladding layer, polishing and flattening, and then processing on the insulating cladding layer to form a through hole, so that the P-type heavily doped region and the N-type heavily doped region are exposed; S5, depositing a metal material and forming a metal electrode, and enabling the metal material to be electrically connected with the P-type heavily doped region and the N-type heavily doped region through the through hole to obtain the on-chip integrated laser device according to any one of claims 1-9.

Description

On-chip integrated laser device and preparation method thereof Technical Field The invention relates to the technical field of semiconductor exciters, in particular to an on-chip integrated laser device and a preparation method thereof. Background Semiconductor lasers, which are key devices for optoelectronics, are widely used in the fields of optical communication, on-chip optical interconnection, laser sensing, integrated circuit detection, optical storage, etc., by virtue of the advantages of high electro-optical conversion efficiency, narrow linewidth, miniaturization, long service life, etc. With the rapid development of microelectronic and optoelectronic integration technologies, integrated lasers on silicon substrates become key components of optoelectronic integrated chips (PICs), which are compatible with mature silicon-based CMOS processes, enabling monolithic integration of optoelectronic devices and microelectronic devices. However, the integration of lasers on conventional silicon substrates has mainly the following problems: 1. The device has low integration level and larger size, and the optical resonant cavity, the electric pumping structure and the like of the traditional silicon-based laser are mostly designed separately, and additional connection and matching structures are needed among all functional components, so that the whole device has larger size. 2. The electric pumping is complex, the excitation efficiency is low, silicon is an indirect band gap semiconductor, the self luminous efficiency is extremely low, therefore, a silicon-based laser usually needs to integrate III-V group and other direct band gap semiconductors as a gain medium, while the traditional electric pumping mode mostly adopts a structure that electrodes are in direct contact with the gain medium, and needs to design a complex electric communication and isolation structure, so that the preparation difficulty of a device can be increased, the electric pumping efficiency is low due to the problems of contact resistance, interface loss and the like, and meanwhile, the energy consumption is high. 3. The structure of the traditional optical resonant cavity does not fully consider the suitability with a silicon-based substrate, the optical loss of part of the resonant cavity structure is larger, and the coupling design of a gain medium and the resonant cavity is unreasonable, so that the light in the resonant cavity is difficult to effectively obtain the gain, and the laser output with low energy consumption and high power cannot be realized. In order to solve the above problems, the industry continuously explores structural optimization and process improvement schemes of a laser on a silicon substrate, such as attempting to optimize a resonant cavity structure to reduce optical loss and improve an integration mode of a gain medium to improve optical coupling efficiency, but the existing schemes are mostly improved aiming at single problems, and system-level on-chip integration of optical, electrical and thermal solutions is not realized, so that the problems of large device size, low integration level, difficult electric pumping, high energy consumption and the like cannot be solved at the same time. It can be seen that there is a need for improvements and improvements in the art. Disclosure of Invention In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide an on-chip integrated laser device and a method for manufacturing the same, which realize system-level on-chip integration of optical, electrical and thermal solutions, and solve the problems of low integration level, difficult electric pumping, high energy consumption and the like of the conventional silicon-based laser. In order to achieve the above purpose, the invention adopts the following technical scheme: An on-chip integrated laser device comprises an SOI wafer, an optical resonant cavity, a waveguide coupling structure, an electric pumping structure and a gain medium, wherein the optical resonant cavity, the waveguide coupling structure and the electric pumping structure are arranged on a silicon layer at the top of the SOI wafer, the gain medium is arranged above the optical resonant cavity, the optical resonant cavity is of a one-dimensional periodic structure and is electrically connected with the electric pumping structure and used for optical feedback, wavelength selection and voltage conduction, the gain medium is a direct band gap semiconductor film and is arranged in an insulating and isolating mode with the optical resonant cavity, the electric pumping structure is used for forming a high-frequency alternating electric field in the direction parallel to the gain medium to realize non-contact electric pumping, and the waveguide coupling structure is connected with the optical resonant cavity and used for laser output coupling. The on-chip integrated laser device is characterized in that the optical resona