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CN-122026224-A - Semiconductor laser and method for manufacturing semiconductor laser

CN122026224ACN 122026224 ACN122026224 ACN 122026224ACN-122026224-A

Abstract

The embodiment of the invention provides a semiconductor laser and a preparation method of the semiconductor laser, and relates to the technical field of optical chips. The ridge waveguide is disposed on the epitaxial wafer. The insulating dielectric layer is arranged on the epitaxial wafer and at least covers the ridge waveguide side wall layer. The metal electrode is disposed on the ridge waveguide. At least part of the area of the insulating medium layer is divided into a plurality of deposition sections, and the prestress sigma of the deposition sections in the non-working state is distributed in a gradient mode. Compared with the prior art, the invention correspondingly sets the insulating medium layers with different prestress in different areas corresponding to the semiconductor laser, and sets the prestress as a function of at least one of the working temperature T and the spacing distance L, so that the thermal strain of the epitaxial wafer, the insulating medium layers and the metal electrode in the working state can be compensated, and the whole thermal strain compensation of the device can be realized, thereby reducing the strain of the device and improving the performance and long-term reliability of the laser.

Inventors

  • JIN YUHAO
  • GUO HAIXIA
  • TANG SONG
  • Hui lisheng
  • YANG GUOWEN

Assignees

  • 度亘核芯光电技术(苏州)股份有限公司
  • 苏州度亘垂腔芯片技术有限公司

Dates

Publication Date
20260512
Application Date
20260415

Claims (10)

  1. 1.A semiconductor laser device, which comprises a semiconductor substrate, characterized by comprising the following steps: An epitaxial wafer (110) having a rear cavity surface (113) and a front cavity surface (111) which are opposed to each other in the cavity length direction; A ridge waveguide (130) provided on the epitaxial wafer (110), the ridge waveguide (130) extending from the rear cavity surface (113) to the front cavity surface (111) along the cavity length direction; an insulating dielectric layer (150) disposed on the epitaxial wafer (110) and covering at least the side wall of the ridge waveguide (130), wherein the insulating dielectric layer (150) extends from the rear cavity surface (113) to the front cavity surface (111), and A metal electrode (170) disposed on the ridge waveguide (130); Wherein at least a partial region of the insulating dielectric layer (150) is configured to be divided into a plurality of deposition sections (151) along the cavity length direction, prestress sigma of the deposition sections (151) in a non-working state is distributed in a gradient manner along the cavity length direction, and the prestress sigma of each deposition section (151) is a function of at least one of a working temperature T and a spacing distance L to compensate thermal strain of the epitaxial wafer (110), the insulating dielectric layer (150) and the metal electrode (170) in the working state, wherein the working temperature T is a temperature of the corresponding deposition section (151) in the working state, and the spacing distance L is a distance between the corresponding deposition section (151) and the rear cavity surface (113).
  2. 2. The semiconductor laser according to claim 1, characterized in that the prestress σ of each deposition section (151) is a function of an operating temperature T, and that the operating temperatures T of a plurality of the deposition sections (151) gradually increase along the cavity length direction, and that the absolute values of the prestress σ of a plurality of the deposition sections (151) gradually increase along the cavity length direction.
  3. 3. The semiconductor laser according to claim 2, characterized in that the thermal strain of the deposition section (151) Corresponding thermal strain of the metal electrode (170) And the corresponding thermal strain of the epitaxial wafer (110) Sum of Is less than or equal to the absolute value of Wherein the thermal strain of the deposition section (151) , Is the Young's modulus of the insulating medium layer.
  4. 4. A semiconductor laser according to claim 3, characterized in that the prestress σ satisfies the following formula: ; Wherein, the Is the thermal expansion coefficient of the insulating medium layer (150); Is the thermal expansion coefficient of the epitaxial wafer (110); Delta T is the difference between the corresponding working temperature T of the deposition section (151) and the temperature T1 in a non-working state; Is the Young's modulus of the insulating medium layer.
  5. 5. The semiconductor laser according to claim 2, characterized in that a partial region of the insulating dielectric layer (150) adjacent to the front facet (111) is configured to be divided into a plurality of deposition sections (151) along the cavity length direction, a first one of the deposition sections (151) along the cavity length direction being arranged spaced apart from the rear facet (113), a last one of the deposition sections (151) along the cavity length direction being joined to the front facet (111).
  6. 6. The semiconductor laser according to claim 5, characterized in that the operating temperature T of the first deposition section (151) in the cavity length direction is half the temperature T2 of the front facet (111) in the operating state; And/or the operating temperatures T of a plurality of said deposition sections (151) along the chamber length are arranged in an arithmetic series and/or an arithmetic series.
  7. 7. The semiconductor laser according to claim 1, characterized in that the insulating dielectric layer (150) is a silicon dioxide film layer; And/or the thickness of the insulating medium layer (150) is less than 1 μm.
  8. 8. A method for manufacturing a semiconductor laser according to any one of claims 1 to 7, characterized in that the method comprises: Preparing an epitaxial wafer (110), wherein the epitaxial wafer (110) is provided with a rear cavity surface (113) and a front cavity surface (111) which are opposite along the cavity length direction; Etching on the epitaxial wafer (110) to form a ridge waveguide (130), wherein the ridge waveguide (130) extends from the rear cavity surface (113) to the front cavity surface (111) along the cavity length direction; Depositing an insulating dielectric layer (150) at least covering the side wall of the ridge waveguide (130) on the epitaxial wafer (110), wherein the insulating dielectric layer (150) extends from the rear cavity surface (113) to the front cavity surface (111); depositing a metal electrode (170) on the ridge waveguide (130); Wherein at least a partial region of the insulating medium layer (150) is configured to be divided into a plurality of deposition sections (151) along the cavity length direction, prestress sigma of the deposition sections (151) in a non-working state is distributed in a gradient manner along the cavity length direction, the prestress sigma of each deposition section (151) is a function of at least one of a working temperature T and a spacing distance L, the working temperature T is a temperature of the corresponding deposition section (151) in the working state, and the spacing distance L is a distance between the corresponding deposition section (151) and the rear cavity surface (113).
  9. 9. The method of manufacturing a semiconductor laser according to claim 8, wherein the step of depositing a dielectric layer (150) on the epitaxial wafer (110) to cover at least the sidewalls of the ridge waveguide (130) comprises: dividing at least a partial region of the surface of the epitaxial wafer (110) into a plurality of deposition regions along the cavity length direction; Sequentially depositing the insulating dielectric layer (150) in a plurality of deposition areas, so that at least part of the insulating dielectric layer (150) is configured to be divided into a plurality of deposition sections (151) along the length direction of the cavity; Wherein by controlling deposition process parameters such that each of the deposition sections (151) has a pre-stress σ, the pre-stress σ of each of the deposition sections (151) is a function of an operating temperature T, and the operating temperatures T of the plurality of deposition sections (151) gradually increase along the chamber length direction, absolute values of the pre-stresses σ of the plurality of deposition sections (151) gradually increase along the chamber length direction.
  10. 10. The method of manufacturing a semiconductor laser according to claim 9, characterized in that the difference in the pre-stresses σ of adjacent deposition sections (151) is smaller than or equal to a preset process value, which is determined by process capability or stress tolerance, to smooth the pre-stresses σ of adjacent deposition sections (151); Wherein the difference in the prestress σ of adjacent deposition sections (151) is less than or equal to a preset process value, comprising: Determining a prestress σ of the deposition zone (151); verifying the difference in prestress σ of adjacent deposition sections (151); When the difference value of the prestress sigma of the adjacent deposition sections (151) is larger than a preset process value, the deposition sections (151) are dynamically adjusted until the difference value of the prestress sigma of the adjacent deposition sections (151) is smaller than or equal to the preset process value, and the prestress sigma of the end part of the deposition section (151) before adjustment is equal to the prestress sigma of the end part of the deposition section (151) after adjustment.

Description

Semiconductor laser and method for manufacturing semiconductor laser Technical Field The invention relates to the technical field of optical chips, in particular to a semiconductor laser and a preparation method of the semiconductor laser. Background Since semiconductor lasers typically have low and high reflectivity coatings on both facets, most of the light exits the low reflectivity facets, resulting in increased heat near the facets. As the temperature increases, the overall strain of the device near the cavity surface increases. Therefore, when a conventional semiconductor laser works, the cavity surface is easy to bear larger strain, so that the performance and long-term reliability of the laser can be affected. In view of this, the current solution is to add an additional structural layer or a rigid structure to regulate the stress of the laser, so that the strain generated by the laser is within a reasonable range, which definitely makes the overall laser structure more complex, and it is difficult to effectively reduce the device strain. Disclosure of Invention The invention aims to provide a semiconductor laser and a preparation method of the semiconductor laser, which can realize the integral thermal strain compensation of the device without additionally arranging a structural layer or a rigid structure, reduce the strain of the device and improve the performance and long-term reliability of the laser by correspondingly arranging insulating medium layers with different stresses corresponding to different areas of the semiconductor laser. The embodiment of the invention is realized by the following scheme: In one aspect, an embodiment of the present invention provides a semiconductor laser including: the epitaxial wafer is provided with a rear cavity surface and a front cavity surface which are opposite along the cavity length direction; the ridge waveguide is arranged on the epitaxial wafer and extends from the rear cavity surface to the front cavity surface along the cavity length direction; The insulating medium layer is arranged on the epitaxial wafer and at least covers the side wall of the ridge waveguide, and extends from the rear cavity surface to the front cavity surface; and a metal electrode disposed on the ridge waveguide; At least part of the area of the insulating medium layer is configured to be divided into a plurality of deposition sections along the length direction of the cavity, prestress sigma of the deposition sections in a non-working state is distributed in a gradient mode along the length direction of the cavity, the prestress sigma of each deposition section is a function of at least one of working temperature T and spacing distance L, the thermal strain of the epitaxial wafer, the insulating medium layer and the metal electrode in the working state is compensated, the working temperature T is the temperature of the corresponding deposition section in the working state, and the spacing distance L is the distance between the corresponding deposition section and the rear cavity surface. In an alternative embodiment, the prestress σ of each of the deposition sections is a function of an operating temperature T, and the operating temperatures T of a plurality of the deposition sections gradually increase along the chamber length direction, and absolute values of the prestress σ of a plurality of the deposition sections gradually increase along the chamber length direction. In an alternative embodiment, the thermal strain of the deposition sectionCorresponding thermal strain of the metal electrodeAnd corresponding thermal strain of the epitaxial waferSum ofIs less than or equal to the absolute value ofWherein the thermal strain of the deposition section,Is the Young's modulus of the insulating medium layer. In an alternative embodiment, the prestress σ satisfies the following formula: ; Wherein, the A thermal expansion coefficient of the insulating medium layer; Is the thermal expansion coefficient of the epitaxial wafer; Delta T is the difference between the corresponding working temperature T of the deposition section and the temperature T1 in a non-working state; Is the Young's modulus of the insulating medium layer. In an alternative embodiment, a partial region of the insulating medium layer, which is close to the front cavity surface, is configured to be divided into a plurality of deposition sections along the cavity length direction, wherein the first deposition section along the cavity length direction is arranged at intervals with the rear cavity surface, and the last deposition section along the cavity length direction is jointed with the front cavity surface. In an alternative embodiment, the operating temperature T of the first deposition section in the chamber length direction is half the temperature T2 of the front chamber surface in the operating state. In an alternative embodiment, the operating temperatures T of a plurality of said deposition sections alon