CN-122026225-A - Semiconductor laser and method for manufacturing the same

CN122026225ACN 122026225 ACN122026225 ACN 122026225ACN-122026225-A

Abstract

The invention provides a semiconductor laser and a preparation method thereof, wherein the preparation method comprises the steps of forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially laminated on one side of a first semiconductor substrate along a first direction; the method comprises the steps of forming a first lower limiting layer on one side of a first semiconductor substrate along a first direction, removing the first semiconductor substrate, bonding the first lower limiting layer and the first lower limiting layer together after removing the first semiconductor substrate, wherein the refractive index of the first lower limiting layer is smaller than that of the first lower limiting layer, and the lattice constant of the first semiconductor substrate is different from that of the second semiconductor substrate.

Inventors

CHENG YANG
WANG JUN
ZHANG CHAOFAN
LI XIAO
ZHANG BINBIN
LV MING
XU XIAOJUN

Assignees

中国人民解放军国防科技大学

Dates

Publication Date: 20260512
Application Date: 20260409

Claims (14)

1. A method of fabricating a semiconductor laser, comprising: forming a first lower confinement layer, an active layer and an upper confinement layer sequentially stacked on one side of a first semiconductor substrate in a first direction; Forming a second lower confinement layer on one side of the second semiconductor substrate along the first direction; Removing the first semiconductor substrate; Bonding the first lower confinement layer and the second lower confinement layer together after removing the first semiconductor substrate; Wherein the refractive index of the second lower confinement layer is smaller than the refractive index of the first lower confinement layer, and the lattice constant of the first semiconductor substrate is different from the lattice constant of the second semiconductor substrate.
2. The method of manufacturing a semiconductor laser according to claim 1, wherein the active layer and the upper confinement layer are located on a side of a portion of the first lower confinement layer facing away from the first semiconductor substrate; The preparation method of the semiconductor laser further comprises the following steps before the first semiconductor substrate is removed: Forming an insulating epitaxial layer on one side of the first lower limiting layer along the first direction, wherein the insulating epitaxial layer is positioned on two sides of the active layer and the upper limiting layer along the slow axis direction, and the thermal conductivity of the insulating epitaxial layer is larger than that of the active layer; a first electrode layer is formed on a side of the upper confinement layer facing away from the active layer.
3. The method for manufacturing a semiconductor laser according to claim 1 or 2, further comprising sequentially forming a first buffer layer and an etching stopper layer on one side of the first semiconductor substrate in the first direction; Forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of a first semiconductor substrate along a first direction, wherein the first lower limiting layer, the active layer and the upper limiting layer are sequentially stacked on one side of the etching barrier layer away from the first buffer layer; The preparation method of the semiconductor laser further comprises the steps of etching and removing the first buffer layer until the etching barrier layer is exposed after the first semiconductor substrate is removed and before the first lower limiting layer and the second lower limiting layer are bonded together.
4. The method of manufacturing a semiconductor laser of claim 3, wherein the etching barrier layer is etched away to expose the first lower confinement layer; wherein bonding the first lower confinement layer and the second lower confinement layer together comprises directly bonding the first lower confinement layer and the second lower confinement layer together, the first lower confinement layer and the second lower confinement layer being in contact.
5. The method of claim 3, further comprising forming a first bonded semiconductor layer on a side of the etch stop layer facing away from the first semiconductor substrate, wherein a doping concentration of donor ions in the first bonded semiconductor layer is greater than a doping concentration of donor ions in the first lower confinement layer; forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of a first semiconductor substrate along a first direction, wherein the first lower limiting layer, the active layer and the upper limiting layer are sequentially stacked on one side of the first bonding semiconductor layer, which is away from the etching barrier layer; etching to remove the etching barrier layer to expose the first bonding semiconductor layer; Forming a second bonding semiconductor layer on one side of the second lower limiting layer away from the second semiconductor substrate, wherein the doping concentration of donor ions of the second bonding semiconductor layer is larger than that of the donor ions in the second lower limiting layer; wherein bonding the first lower confinement layer and the second lower confinement layer together includes bonding the first lower confinement layer and the second lower confinement layer together through the first bonded semiconductor layer and the second bonded semiconductor layer, the first bonded semiconductor layer and the second bonded semiconductor layer being in contact.
6. The method for manufacturing a semiconductor laser according to claim 1, characterized in that the method for manufacturing further comprises: Forming a second buffer layer on one side of the second semiconductor substrate along the first direction; wherein forming the second lower confinement layer on a side of the second semiconductor substrate along the first direction includes forming the second lower confinement layer on a side of the second buffer layer facing away from the second semiconductor substrate.
7. The method for manufacturing a semiconductor laser according to claim 6, characterized in that the method for manufacturing further comprises: Forming a third buffer layer on one side of the second buffer layer away from the second semiconductor substrate, wherein the doping concentration of donor ions in the third buffer layer is greater than that in the second lower limiting layer; Wherein forming the second lower confinement layer on a side of the second semiconductor substrate along the first direction includes forming the second lower confinement layer on a side of the third buffer layer facing away from the second buffer layer.
8. The method of manufacturing a semiconductor laser according to claim 1, wherein after bonding the first lower confinement layer and the second lower confinement layer together, further comprising: thinning the second semiconductor substrate; And after the second semiconductor substrate is thinned, forming a second electrode layer on one side of the second semiconductor substrate, which is away from the second lower limiting layer.
9. The method of manufacturing a semiconductor laser according to claim 1, wherein a thickness of the active layer in the first direction is 1 to 3 micrometers.
10. The method of manufacturing a semiconductor laser according to claim 1, wherein a lattice constant of the first semiconductor substrate is larger than a lattice constant of the second semiconductor substrate.
11. The method of manufacturing a semiconductor laser according to claim 1, wherein a lattice constant of the second lower confinement layer is equal to a lattice constant of the second semiconductor substrate.
12. The method of manufacturing a semiconductor laser according to claim 1, wherein the material of the first lower confinement layer comprises InP doped with donor ions, the material of the first semiconductor substrate comprises InP doped with donor ions, the material of the second lower confinement layer comprises In 0.49 Ga 0.51 P doped with donor ions, and the material of the second semiconductor substrate comprises GaAs doped with donor ions.
13. A semiconductor laser device, which comprises a semiconductor substrate, characterized by comprising the following steps: A second semiconductor substrate; a second lower confinement layer, a first lower confinement layer, an active layer and an upper confinement layer which are sequentially stacked on one side of the second semiconductor substrate along the first direction; Wherein the refractive index of the second lower confinement layer is smaller than the refractive index of the first lower confinement layer, and the lattice constant of the second lower confinement layer is the same as the lattice constant of the second semiconductor substrate.
14. The semiconductor laser of claim 13, further comprising: A first bonded semiconductor layer located on a side of the first lower confinement layer facing away from the active layer, the doping concentration of donor ions in the first bonded semiconductor layer being greater than the doping concentration of donor ions in the first lower confinement layer; A second bonded semiconductor layer located on a side of the second lower confinement layer facing away from the second semiconductor substrate, the second bonded semiconductor layer having a doping concentration of donor ions that is greater than a doping concentration of donor ions in the second lower confinement layer; wherein the first bonded semiconductor layer and the second bonded semiconductor layer are in contact.

Description

Semiconductor laser and method for manufacturing the same Technical Field The invention relates to the technical field of semiconductors, in particular to a semiconductor laser and a preparation method thereof. Background Semiconductor lasers include Quantum cascade lasers (Quantum CASCADE LASER, QCL). The emission wavelength of the quantum cascade laser can cover a middle-far infrared band, and the quantum cascade laser has wide application prospect in the fields of infrared countermeasure, space optical communication, gas sensing and the like due to the advantages of small volume, high conversion efficiency, tunable wavelength and the like. In particular, in special environments such as coal mines, the real-time and high-precision detection requirements for trace gases are increasing, which promotes the research and development of low-power consumption, wavelength locking and narrow-linewidth light sources. Distributed Feedback (DFB) quantum cascade lasers (DFB-QCL) are key devices to meet the needs of such applications due to their excellent single mode characteristics and wavelength stability. Disclosure of Invention The invention aims to solve the technical problems of reducing optical loss of a semiconductor laser and improving electro-optical conversion efficiency and luminous power, thereby providing the semiconductor laser and a preparation method thereof. The application provides a preparation method of a semiconductor laser, which comprises the steps of forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of a first semiconductor substrate along a first direction, forming a second lower limiting layer on one side of a second semiconductor substrate along the first direction, removing the first semiconductor substrate, and bonding the first lower limiting layer and the second lower limiting layer together after removing the first semiconductor substrate, wherein the refractive index of the second lower limiting layer is smaller than that of the first lower limiting layer, and the lattice constants of the first semiconductor substrate and the second semiconductor substrate are different. Optionally, the active layer and the upper limiting layer are located at one side of a part of the first lower limiting layer, which is away from the first semiconductor substrate, wherein before the first semiconductor substrate is removed, the preparation method of the semiconductor laser further comprises the steps of forming an insulating epitaxial layer at one side of the first lower limiting layer along the first direction, wherein the insulating epitaxial layer is located at two sides of the active layer and the upper limiting layer along the slow axis direction, the thermal conductivity of the insulating epitaxial layer is larger than that of the active layer, and a first electrode layer is formed at one side of the upper limiting layer, which is away from the active layer. The method for manufacturing the semiconductor laser comprises the steps of sequentially forming a first buffer layer and an etching barrier layer on one side of a first semiconductor substrate along a first direction, forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of the first semiconductor substrate along the first direction, forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of the etching barrier layer away from the first buffer layer, removing the first semiconductor substrate, and before bonding the first lower limiting layer and the second lower limiting layer together, etching and removing the first buffer layer until the etching barrier layer is exposed, and removing the etching barrier layer. Optionally, etching to remove the etching barrier layer and expose the first lower confinement layer, wherein bonding the first lower confinement layer and the second lower confinement layer together includes directly bonding the first lower confinement layer and the second lower confinement layer together, and contacting the first lower confinement layer and the second lower confinement layer. The preparation method comprises the steps of forming a first bonding semiconductor layer on one side of the etching barrier layer, which is away from the first semiconductor substrate, wherein the doping concentration of donor ions in the first bonding semiconductor layer is larger than that of donor ions in the first lower limiting layer, forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of the first semiconductor substrate along a first direction, forming a first lower limiting layer, an active layer and an upper limiting layer which are sequentially stacked on one side of the first bonding semiconductor layer, which is away from the etching barrier lay