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CN-122026228-A - Spectrum beam-combining semiconductor laser capable of inhibiting crosstalk

CN122026228ACN 122026228 ACN122026228 ACN 122026228ACN-122026228-A

Abstract

The invention relates to the technical field of lasers and provides a spectrum beam-combining semiconductor laser for inhibiting crosstalk, which comprises a semiconductor light-emitting module, a wavelength locking module and a spectrum beam-combining module, wherein the semiconductor light-emitting module comprises more than two light-emitting units which are distributed along a beam-combining direction, the wavelength locking module is used for feeding back part of light with target wavelengths to the light-emitting units along an original light path, so that different light-emitting units are locked on respective target wavelengths according to arrangement positions to form wide-spectrum large-size light beam output in the beam-combining direction, and the spectrum beam-combining module is used for combining light beams emitted by the wavelength locking module in the beam-combining direction and outputting a beam of composite light with coaxial common aperture. The wavelength locking and the spectrum beam combination are respectively realized in the two modules, and the semiconductor light-emitting module can realize the wavelength locking before the beam focusing beam combination, so that crosstalk between light-emitting units is restrained, and the high-beam quality combination of the dense light-emitting units and the output of corresponding high power and high brightness are realized.

Inventors

  • WANG XIAOJUN
  • ZHANG XIAOMING
  • LI JINGZU
  • GUO YADING

Assignees

  • 中国科学院理化技术研究所

Dates

Publication Date
20260512
Application Date
20260119

Claims (10)

  1. 1. A crosstalk-suppressed spectrally combined semiconductor laser, comprising: A semiconductor light emitting module (10) including two or more light emitting units (11) arranged in a beam combining direction; The wavelength locking module (20) is coupled with the optical path of the semiconductor light emitting module (10) and is used for feeding back part of light with target wavelengths to the light emitting units (11) along the original optical path, so that different light emitting units (11) are locked on respective target wavelengths according to the arrangement positions to form a beam output with wide spectrum and large size in the beam combining direction; and the spectrum beam combining module (30) is coupled with the optical path of the wavelength locking module (20) and is used for combining the light beams emitted by the wavelength locking module (20) in the beam combining direction and outputting a beam of combined light with a coaxial common aperture.
  2. 2. The spectral beam-combining semiconductor laser with crosstalk suppression according to claim 1, characterized in that the light emitting unit (11) comprises an exit end and a reflection end arranged opposite to each other, and a gain medium arranged between the exit end and the reflection end.
  3. 3. The crosstalk-suppressed spectrally combined semiconductor laser according to claim 2, characterized in that, The light-emitting area of the light-emitting unit (11) has a thickness of 1.2 μm to 3 μm in the fast axis direction and a stripe width of 0.1mm to 1mm in the slow axis direction, and/or, The light beams emitted by the light emitting units (11) are parallel to each other and have the same elevation, and/or, The semiconductor light-emitting module (10) further comprises a fast axis collimating element, wherein the fast axis collimating element is correspondingly packaged at the emergent end of the light-emitting unit (11) and is used for collimating the light beam emitted by the light-emitting unit (11) in the fast axis direction.
  4. 4. The crosstalk-suppressed spectral-combined semiconductor laser according to claim 1, characterized in that the wavelength-locking module (20) comprises, arranged in sequence along the optical path: A first optical conversion system (21), wherein the semiconductor light emitting module (10) is arranged on the front focal plane of the first optical conversion system (21) and is used for focusing the light beams emitted by the light emitting units (11) along the beam combination direction; A first grating element (22) having a diffraction direction matching the polarization direction of the light beam, for diffracting the light beam emitted from the first optical conversion system (21) in a beam combining direction; And an output coupling mirror (23) for providing partial feedback and output to the light beam of the target wavelength.
  5. 5. The crosstalk-suppressed spectrally combined semiconductor laser according to claim 4, characterized in that, The first optical conversion system (21) comprises a plano-convex cylindrical mirror or an aspheric cylindrical mirror, the surface of which is plated with a broadband antireflection film; The first grating element (22) is configured as a transmission grating with a reticle density higher than 900 lines/mm; The output coupling mirror (23) is a plane mirror and is plated with a film with the reflectivity R for the output light beam, wherein R is more than or equal to 3% and less than or equal to 30%.
  6. 6. The crosstalk-suppressed spectral-combined semiconductor laser according to claim 5, characterized in that the first grating element (22) is placed behind the first optical conversion system (21) with a Littrow angle for the center wavelength; The output coupling mirror (23) is located in the first order diffraction light direction of the first grating element (22) and the mirror surface is perpendicular to the first order diffraction light direction of the first grating element (22).
  7. 7. The crosstalk-suppressed spectral beam-combining semiconductor laser according to any of claims 1 to 6, characterized in that the spectral beam-combining module (30) comprises a second optical conversion system (31) and a beam-combining diffraction element (32) arranged in sequence along the optical path; The second optical conversion system (31) is used for focusing the light beam emitted by the wavelength locking module (20) onto the beam combination diffraction element (32) along the beam combination direction, and changing the light beam into a beam of combined light output with a coaxial common aperture after being diffracted by the beam combination diffraction element (32).
  8. 8. The crosstalk-suppressed spectral-combined semiconductor laser according to claim 7, characterized in that the second optical conversion system (31) comprises a plano-convex cylindrical mirror, an aspherical cylindrical mirror or a second grating element.
  9. 9. The crosstalk-suppressed spectral beam-combining semiconductor laser of claim 8, wherein the second grating element is configured as a transmission grating with a scribe line density higher than 900 lines/mm.
  10. 10. The crosstalk-suppressed spectral beam-combining semiconductor laser of claim 7, characterized in that the beam-combining diffraction element (32) comprises a transmission grating or a reflection grating with a reticle density higher than 900 lines/mm.

Description

Spectrum beam-combining semiconductor laser capable of inhibiting crosstalk Technical Field The invention relates to the technical field of lasers, in particular to a spectrum beam-combining semiconductor laser capable of inhibiting crosstalk. Background The high-power high-brightness laser is widely applied in the fields of industrial manufacture, scientific research, biomedical treatment, national defense safety and the like, and has important significance for development and progress of military and industry. The output power of a single laser is correspondingly limited due to the limitations of material characteristics, laser crystal processing size, end surface coating process and the like and the thermal effect caused by laser output, and the laser beam combining technology is the most direct and effective way to realize the high-power high-brightness laser at present. The spectrum beam combining technology is widely applied as a technology which does not need to precisely regulate and control each laser unit and can realize coaxial common-aperture output in beam combining, and is tried in the field of fiber lasers. In recent twenty years, with the progress of semiconductor technology, the power level of semiconductor lasers is continuously improved, and the semiconductor lasers have the advantages of rich wavelength, small volume, simple manufacturing process, high electro-optical efficiency, long service life and the like. Spectral beam combining research based on fiber lasers and semiconductor lasers has great prospect. However, in practical research, it is found that in order to increase the output power of the spectrum combination, more light emitting units need to be allowed to participate in the limited diffraction bandwidth, but crosstalk phenomenon exists among a plurality of light emitting units, and the denser the light emitting units are, the more serious the crosstalk is, so that the problem is that the quality of the light beam is rapidly deteriorated, and the brightness is reduced. In view of the above problems and findings, how to reduce the crosstalk problem between light emitting units in the spectrum beam combining technology, and to realize high beam quality synthesis and corresponding high power and high brightness output of dense light emitting units, has become an important technical problem to be solved currently. It should be apparent that the foregoing is intended to facilitate an understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art. Disclosure of Invention The invention provides a spectrum beam combination semiconductor laser for inhibiting crosstalk, which is used for solving the defect that the beam combination quality is difficult to ensure due to the crosstalk phenomenon between light-emitting units in the prior art, reducing the crosstalk problem between the light-emitting units and realizing the combination of high beam quality of dense light-emitting units and the output of corresponding high power and high brightness. The invention provides a spectrum beam-combining semiconductor laser for restraining crosstalk, which comprises the following components: The semiconductor light-emitting module comprises more than two light-emitting units which are arranged along the beam combination direction; The wavelength locking module is coupled with the light path of the semiconductor light emitting module and is used for feeding back part of light with target wavelength to the light emitting units along the original light path, so that different light emitting units are locked on respective target wavelengths according to the arrangement positions to form wide-spectrum large-size light beam output in the beam combining direction; And the spectrum beam combining module is coupled with the optical path of the wavelength locking module and is used for combining the light beams emitted by the wavelength locking module in the beam combining direction and outputting a beam of combined light with a coaxial common aperture. The invention provides a spectrum beam-combining semiconductor laser for inhibiting crosstalk, which comprises an emergent end, a reflecting end and a gain medium, wherein the emergent end and the reflecting end are oppositely arranged, and the gain medium is arranged between the emergent end and the reflecting end. According to the present invention there is provided a crosstalk-suppressed spectrally combined semiconductor laser, The thickness of the light emitting area of the light emitting unit along the fast axis direction is 1.2-3 μm, the stripe width along the slow axis direction is 0.1-1 mm, and/or, The light beams emitted by the light emitting units are parallel to each other and have the same elevation, and/or, The semiconductor light-emitting module further comprises a fast axis collima