Search

CN-122026229-A - Semiconductor stacked array laser, laser generation method and assembly method thereof

CN122026229ACN 122026229 ACN122026229 ACN 122026229ACN-122026229-A

Abstract

The invention relates to a semiconductor stacked array laser, a laser generating method and an assembling method thereof, belonging to the field of lasers. The technical scheme is that the semiconductor stacked array laser comprises a stacked array and a plurality of laser bars which are arranged on the sides of the stacked array, wherein a laser chip is arranged at the front end of a heat sink of the laser bars, a fast axis collimating lens and a reflecting mirror are sequentially arranged along an output light path, the inclined plane of the reflecting mirror is inclined relative to the laser chip, a VBG (visual basic) grating is arranged in front of the inclined plane of the reflecting mirror, and the VBG grating and the reflecting mirror are arranged in opposite directions in the reflecting direction through the inclined plane. The design enables most of laser to be directly output through the vertical plane of the reflecting mirror, only a small amount of laser is reflected to the VBG grating for detection and adjustment, VBG absorption energy is greatly reduced, wavelength unlocking caused by temperature drift is avoided, wave locking precision is stable during high-power operation is guaranteed, meanwhile, the fast axis collimating lens is matched with the reflecting mirror, beam collimating effect is improved, and beam quality of output laser is optimized.

Inventors

  • LI PEIXU
  • ZHANG GUANGMING
  • LIU CHENGCHENG
  • DU JUNJUN
  • LIU QI
  • WU DEHUA

Assignees

  • 山东华光光电子股份有限公司

Dates

Publication Date
20260512
Application Date
20260130

Claims (10)

  1. 1. The semiconductor stacked array laser comprises a stacked array (1), a plurality of stacked laser bars (2) are arranged on the side of the stacked array (1), and is characterized in that the laser bars (2) comprise heat sinks (201), the heat sinks (201) are of strip-shaped structures, laser chips (204) are arranged at the front ends of the heat sinks (201), fast axis collimating lenses (205) and reflectors (206) are sequentially arranged at the output ends of the laser chips (204) along the output light path direction of the laser chips (204), the reflectors comprise inclined planes (2061) and vertical planes (2062), the inclined planes (2061) are obliquely opposite to the output ends of the laser chips (204), VBG gratings (207) are further arranged in front of the inclined planes (2061), and the VBG gratings (207) are arranged opposite to the vertical planes of the laser chips (204) in the reflecting direction through the inclined planes (2061), and the VBG gratings (2) are perpendicular to the output light path direction.
  2. 2. The semiconductor stacked array laser according to claim 1, wherein a lens fixing seat (208) is arranged at one end, far away from the stacked array (1), of the heat sink (201), the reflector (206) is installed inside the lens fixing seat (208), the VBG grating (207) is installed at the top of the lens fixing seat (208) and located above the reflector (206), a protective cover (210) is further arranged above the VBG grating (207), and protective glass (209) is installed at one side, far away from the heat sink (201), of the lens fixing seat (208), and the protective glass (209) is parallel to the vertical plane (2062).
  3. 3. The semiconductor stacked array laser of claim 2, wherein the lens fixing base (208) is U-shaped and comprises two vertical arms (2084), the lower parts of the vertical arms (2084) are connected through horizontal arms (2085), a VBG fixing platform (2083) is respectively arranged on the opposite sides above the two vertical arms (2084), two ends of the VBG grating (207) are respectively arranged on the VBG fixing platform (2083), a glass fixing frame (2082) is jointly arranged in the area, close to the U-shaped inside, of the vertical arms (2084) and the horizontal arms (2085) on one side end face, far away from the heat sink (201), of the lens fixing base (208), and the protective glass (209) is embedded into the glass fixing frame (2082).
  4. 4. A semiconductor stacked array laser according to claim 3, wherein fixing grooves (211) are respectively formed on two sides of an end surface, which is far away from the stacked array (1), of the heat sink (201), fixing protrusions (2081) are respectively formed on two sides of an end surface, which faces the heat sink (201), of the lens fixing base (208), and the fixing protrusions (2081) are in fit connection with the fixing grooves (211) at corresponding positions.
  5. 5. The semiconductor stacked laser as claimed in claim 4, wherein the stacked laser (1) comprises a positive electrode (103) and a negative electrode (105), a plurality of laser bars (2) are clamped between the positive electrode (103) and the negative electrode (105), a positioning block (104) is further arranged between the positive electrode (103) and the negative electrode (105), the thickness of the positioning block (104) is the same as the total thickness of the stacked laser bars (2), the rear end of the laser bar (2) is abutted against the side face of the positioning block (104), the positive electrode (103) and the negative electrode (105) are L-shaped, and two corners, far away from the laser bar (2), of the positioning block (104) are abutted against the corners of the positive electrode (103) and the negative electrode (105).
  6. 6. The semiconductor stacked laser as claimed in claim 5, wherein a first set screw (108) and a second set screw (109) are further provided between the positive electrode (103) and the negative electrode (105), the first set screw (108) passing through the positioning block (104), the second set screw (109) passing through the stacked laser bars (2).
  7. 7. The semiconductor stacked array laser of claim 6, wherein the stacked array (1) further comprises a positive electrode fixing block (101) and a negative electrode fixing block (107), the positive electrode fixing block (101) is located on one side, facing away from the positioning block (104), of the positive electrode (103), a positive electrode insulating sheet (102) is further arranged between the positive electrode fixing block (101) and the positive electrode (103), the negative electrode fixing block (107) is located on one side, facing away from the positioning block (104), of the negative electrode (105), a negative electrode insulating sheet (106) is further arranged between the negative electrode fixing block (107) and the negative electrode (105), and two ends of the first fixing screw (108) and the second fixing screw (109) are respectively connected with the positive electrode fixing block (101) and the negative electrode fixing block (107).
  8. 8. The semiconductor stacked array laser of claim 7, wherein a fixing hole (203) is formed in the middle of the heat sink (201), the second fixing screw (109) penetrates through the fixing hole (203), positioning holes (202) are formed in two sides of the heat sink (201) in the width direction of the heat sink (201), positioning columns (110) are arranged in the positioning holes (202) in the same position on the plurality of heat sinks (201) in a common mode, and two ends of the positioning columns (110) are inserted into the positive electrode fixing block (101) and the negative electrode fixing block (107) respectively.
  9. 9. A method of laser generation of a semiconductor stacked laser as claimed in any one of claims 1 to 8, comprising the steps of: The pumping source emits laser, the laser irradiates on an inclined surface (2061) of the reflector (206) after being shaped by the fast axis collimating lens (205), and then the laser passes through the reflector (206) and is emitted from a vertical surface (2062) to realize output; In the process, a small amount of laser light is reflected by the inclined plane (2061) to enter the VBG grating (207), the VBG grating (207) reflects laser light with a specific wavelength and absorbs laser light with other wavelengths, and the reflected laser light irradiates on the inclined plane (2061) and is reflected back to the laser chip (204); The laser chip (204) receives the laser light with the wavelength and adjusts the pumping source so that the pumping source can accurately output the laser light with the wavelength.
  10. 10. A method of assembling a semiconductor stacked laser as claimed in claim 8, comprising the steps of: S1, placing an anode insulating sheet (102) above an anode fixed block (101), then placing a positioning block (104) on the anode insulating sheet (102), sequentially stacking a negative electrode (105), a negative electrode insulating sheet (106) and a negative electrode fixed block (107), aligning installation hole sites of all parts, and then screwing a first fixing screw (108) through the parts and on the anode fixed block (101) to complete the assembly of a basic frame of the stacked array (1); S2, inserting two ends of a positioning column (110) into corresponding connecting hole sites of a positive electrode (103) and a negative electrode (105), wherein a plurality of laser bars (2) are sequentially stacked, the rear end of each laser bar (2) is abutted against the side surface of a positioning block (104), and the positioning column (110) passes through a positioning hole (202) of the laser bar (2) to ensure that the total stacking thickness of the laser bars (2) is consistent with the thickness of the positioning block (104); S3, a second fixing screw (109) penetrates through a negative electrode fixing block (107), a negative electrode insulating sheet (106), a negative electrode (105), a fixing hole (203) of the laser bar (2), a positive electrode (103) and a positive electrode insulating sheet (102), and is finally screwed on the positive electrode fixing block (101), and meanwhile an insulating sleeve is sleeved between the second fixing screw (109) and the fixing hole (203), so that the laser bar (2) and the stacked array (1) are fixed; S4, inserting fixing protrusions (2081) of the lens fixing base (208) into fixing grooves (211) on two sides of the front end of the heat sink (201), smearing UV curing glue at the connecting gaps of the fixing protrusions (2081) and the fixing grooves (211), and completing assembly of the lens fixing base (208) and the heat sink (201) after the glue is cured; S5, installing the reflector (206) in the lens fixing seat (208), adjusting the reflector (206) to enable a slope (2061) with a 45-degree inclination angle to face the fast axis collimating lens (205), ensuring the accurate beam reflection path, and fixing the reflector (206) on the lens fixing seat (208) by using UV glue; S6, placing the VBG grating (207) on a VBG fixing platform (2083) of a lens fixing seat (208), adjusting the position to enable the VBG grating (207) to be opposite to a laser chip (204) in a reflecting direction through an inclined plane (2061) of a reflecting mirror (206), fixing the VBG grating (207) by adopting 3410UV curing adhesive, and then adhering a protective cover (210) above the VBG grating (207); S7, embedding the protective glass (209) into a glass fixing frame (2082) at the front end of the lens fixing seat (208), ensuring that the protective glass (209) is parallel to a vertical surface (2062) of the reflector (206), and completing the integral assembly of the laser bar (2); S8, inserting the assembled stacked array (1) from one side of the protective shell (3), aligning the mounting holes through the nested structure, and fixing the stacked array (1) and the protective shell (3) to complete the whole assembly of the semiconductor stacked array laser.

Description

Semiconductor stacked array laser, laser generation method and assembly method thereof Technical Field The invention belongs to the field of lasers, and particularly relates to a semiconductor stacked array laser and a laser generation method thereof. Background The micro-channel semiconductor stacked array laser has the advantages that by means of a unique micro-channel heat dissipation structure, hundreds of watts to kilowatt high-power output is realized, excellent beam quality is maintained, the divergence angle of a fast axis is small, slow-axis light spots are uniform, and the micro-channel semiconductor stacked array laser becomes a core device in the fields of industrial laser processing, medical equipment, high-power laser pumping and the like, and particularly in the pumping application of a gas laser, the micro-channel semiconductor stacked array laser is a key laser device for guaranteeing the efficient operation of a system. However, the gas medium absorption characteristics of gas lasers place stringent demands on the pump light, namely that the absorption peak bandwidth is extremely narrow, the effective absorption region width is typically much smaller than 1nm, and in some high-precision applications, the half-width of the absorption peak is even smaller than 0.2nm. This requires a micro-channel laser as a pump source, which must meet both the two core criteria of "output center wavelength exactly matching absorption peak" and "spectral width narrowing into absorption bandwidth". If the laser device cannot be achieved, the absorption efficiency of the pump light is directly reduced greatly, a large amount of unabsorbed laser energy can be reflected in the resonant cavity of the laser device for multiple times, so that serious energy waste is caused, the temperature in the cavity can be rapidly increased, further, the performance degradation and the working point drift of the core component of the laser device are caused, and even the device can be burnt in extreme cases, so that the stability and the service life of the whole laser system are thoroughly destroyed. The VBG grating (bulk grating) is a key component for realizing wavelength locking, and can reflect only laser with specific wavelength, so as to realize wavelength detection of the laser, reflect the laser with specific wavelength to a detection component, and realize feedback control of the laser so as to unify output wavelengths. However, in the current wavelength locking scheme, such as the mode locking laser provided in patent CN114725773a, after the VBG grating is directly arranged on the collimating mirror, in the scheme, when high-power laser passes through the VBG grating, laser with other wavelengths can be absorbed, the grating absorbs laser energy, so that the temperature of the VBG continuously rises, the wavelength locking performance of the VBG is extremely sensitive to the temperature, the temperature drift can directly cause the deterioration of the wavelength locking effect, even the wavelength is out of lock, in addition, under the action of the high-power laser, the optical characteristic of the VBG grating is easy to change, the wavelength adjustment difficulty is obviously increased, and the gas absorption peak is difficult to be precisely matched. Disclosure of Invention Aiming at the problem that the performance is seriously reduced due to the fact that VBG grating absorbs laser energy to raise the temperature of the VBG grating in the wavelength locking scheme of the traditional micro-channel stacked array laser, the invention provides a semiconductor stacked array laser. In order to solve the problems, the technical scheme includes that the semiconductor stacked array laser comprises a stacked array, a plurality of stacked laser bars are arranged on the side of the stacked array, each laser bar comprises a heat sink, the heat sink is of a ribbon-shaped structure, a laser chip is arranged at the front end of the heat sink, a fast axis collimating lens and a reflecting mirror are sequentially arranged at the output end of the laser chip along the output light path direction of the laser chip, the reflecting mirror comprises an inclined plane and a vertical plane, the inclined plane is obliquely opposite to the output end of the laser chip, a VBG (visual basic group) grating is arranged in front of the inclined plane in an inclined direction, and the VBG grating and the laser chip are arranged in a right opposite mode in the reflecting direction through the inclined plane and are perpendicular to the output light path direction. Through the optical path design of the inclined plane of the reflecting mirror and the VBG grating, most laser passes through the reflecting mirror to be directly output, only a small amount of laser is reflected to be incident on the VBG grating to be used as a detection and adjustment light source, so that the VBG absorption energy is greatly reduced, wavelength lock losing caused