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CN-122026807-A - Method and device for detecting functional damage of battery based on semiconductor multi-junction spectral response characteristics

CN122026807ACN 122026807 ACN122026807 ACN 122026807ACN-122026807-A

Abstract

The invention belongs to the technical field of photoelectric detection, and relates to a method and a device for detecting functional damage of a battery based on semiconductor multi-junction spectral response characteristics. The detection method comprises the steps of selecting a detection light source and a detection filter with applicable wavelengths based on the spectral response range of each junction cell in the semiconductor cell, obtaining applicable detection light sources with different wavelengths by using a simulated solar light source and a multi-wavelength filter device, and exciting the multi-junction solar cell and each junction cell to detect the performance of each junction cell in the cell. By measuring the working characteristics of the multi-junction solar cell before and after the action of external factors, the functional damage detection of the multi-junction solar cell is realized.

Inventors

  • YE JIFEI
  • GUO WEI
  • CHANG HAO
  • YU CHENGHAO
  • LI SAI

Assignees

  • 中国人民解放军军事航天部队航天工程大学

Dates

Publication Date
20260512
Application Date
20251222

Claims (10)

  1. 1. The method for detecting the functional damage of the battery based on the multi-junction spectral response characteristic of the semiconductor is characterized by comprising the following steps of: Simulating the solar light source to emit divergent light beams, and performing beam shaping treatment on the divergent light beams to obtain parallel light beams; the parallel light beams pass through the optical filter along the horizontal direction, and excite the multi-junction solar cells and each junction cell through the detection light source; Measuring the photoelectric characteristics of the excited multi-junction solar cells and the junction cells to form a database of the working characteristics of the multi-junction solar cells and the junction cells; and analyzing the working performance and the functional damage of the multi-junction solar cells and the junction solar cells based on the measurement result.
  2. 2. The method for detecting the functional damage of the battery based on the multi-junction spectral response characteristics of the semiconductor according to claim 1, wherein the optical filters are optical filters with different wavelengths, and the transmission detection light source is a detection light source transmitting different wavelengths.
  3. 3. The method for detecting the functional damage of the cell based on the multi-junction spectral response characteristics of the semiconductor according to claim 2, wherein the transmittance of the optical filter to the light beam with the corresponding wavelength in the parallel light beam is greater than or equal to 50%.
  4. 4. The method for detecting the functional damage of the cell based on the multi-junction spectral response characteristics of the semiconductor according to claim 1, wherein the multi-junction solar cell is a three-junction gallium arsenide cell and/or a three-junction gallium arsenide cell after being influenced by external factors.
  5. 5. The method for detecting the functional damage of the cell based on the multi-junction spectral response characteristic of the semiconductor according to claim 4, wherein the internal structure of the multi-junction solar cell and the material properties of each junction cell are obtained according to the type of the multi-junction solar cell, and the spectral response range of each junction cell is obtained based on the material properties of each junction cell.
  6. 6. The method for detecting the functional damage of the battery based on the multi-junction spectral response characteristics of the semiconductor according to claim 4, wherein the wavelength of the detection light source corresponding to each junction cell is determined according to the spectral response range of each junction cell.
  7. 7. The device for detecting the functional damage of the battery based on the multi-junction spectral response characteristic of the semiconductor is characterized by comprising an analog solar light source (1), a beam shaping device (2), a multi-wavelength light filtering device (3) and a multi-junction solar battery (4); The beam shaping device (2) comprises a plurality of convex lenses and a flat convex mirror; the multi-wavelength light filtering device (3) comprises a lens frame and a plurality of light filters with different transmission wavelengths; The multi-junction solar cell (4) comprises an antireflection film DAR layer structure (41), a top cell GaInP layer structure (42), a middle cell GaAs layer structure (43) and a bottom cell Ge layer structure (44).
  8. 8. The device for detecting the functional damage of the cell based on the multi-junction spectral response characteristics of the semiconductor according to claim 7, wherein during measurement, the simulated solar light source (1) emits a divergent light beam, the divergent light beam passes through the beam shaping device (2) to obtain a parallel light beam, the parallel light beam reaches the multi-wavelength filtering device (3) along the horizontal direction, and after passing through different wavelength filters, the multi-junction solar cell and each junction cell are excited by the detection light source with different wavelengths, and the different wavelengths are determined according to the spectral response ranges of each junction cell.
  9. 9. The device for detecting the functional damage of the battery based on the multi-junction spectrum response characteristic of the semiconductor is characterized in that the simulated solar light source (1) can be adjusted in front-back, up-down, left-right and pitching and can be locked after being adjusted, and the multi-wavelength filtering device (3) can be adjusted and can be locked after being adjusted.
  10. 10. The device for detecting the functional damage of the cell based on the multi-junction spectral response characteristics of the semiconductor according to claim 8, wherein the positions of the simulated solar light source (1) and the beam shaping device (2) are determined by the positions and the sizes of the multi-junction solar cells (4), and the positions and the parameters of the multi-wavelength filtering device (3) are determined by the spectral response ranges of the junction cells.

Description

Method and device for detecting functional damage of battery based on semiconductor multi-junction spectral response characteristics Technical Field The invention relates to the technical field of photoelectric detection, in particular to a method and a device for detecting functional damage of a battery based on multi-junction spectral response characteristics of a semiconductor. Background In recent years, the space missions of deep space exploration, high-flux satellites and the like rapidly develop towards the directions of complicacy and high precision, and the requirements on the power density, extreme environment tolerance and long on-orbit service life of a spacecraft energy system are increasingly stringent. The solar battery is used as a core energy supply of the spacecraft, and the performance quality of the solar battery directly determines the execution efficiency and reliability of the aerospace task and becomes a key technical bottleneck for restricting the aerospace task to advance to a higher level. In the technical evolution process of the spacecraft solar cell, the early monocrystalline silicon cell takes the position of a main power supply of a spacecraft mission for a long time by virtue of excellent reliability. But is limited by the single band gap characteristic (band gap width is about 1.1 eV), the absorption and utilization rate of the battery to a space solar spectrum (covering ultraviolet to infrared continuous spectrum) is low, the core requirements of spacecraft load capacity improvement and long on-orbit service life cannot be met, and the energy supply requirements of complex aerospace tasks are difficult to adapt gradually. Gallium arsenide (GaAs) single junction cells have been developed to break through the performance bottlenecks of single crystal silicon cells. The battery has direct band gap characteristics (band gap width is 1.42 eV), not only remarkably improves photoelectric conversion efficiency, but also shows better space radiation resistance, and rapidly becomes a standard energy supply configuration of space equipment such as low-orbit satellites. However, the GaAs single junction battery has weak absorption capability to the infrared light band, and its energy stability and endurance capability are greatly attenuated in low-illuminance and wide-spectrum environments such as deep space exploration, so that it is difficult to match the energy requirement of the deep space exploration task. Along with the innovation of semiconductor materials and battery preparation technology, the three-junction gallium arsenide battery (GaInP/GaAs/Ge) realizes stepped efficient absorption of visible spectrum and infrared spectrum through accurate energy band structural design, thoroughly rewrites the energy architecture of the traditional spacecraft, and is widely applied to various aerospace tasks at present. Compared with a single junction solar cell, the multi-junction solar cell constructs a multi-stage PN junction structure by stacking semiconductor subcells with various band gap widths, can greatly improve the comprehensive utilization rate and photoelectric conversion efficiency of solar spectrum, and is the main technical direction of the solar cell for aerospace at present. From the optical response mechanism, a main stream three-junction gallium arsenide battery (GaInP/GaAs/Ge) is taken as an example, a gradient energy band design is adopted, a top battery close to an incident light source is made of a wide forbidden band material GaInP and is used for specifically absorbing a short wavelength spectrum of 350-700 nm, a middle battery in the middle layer is made of a GaAs material and is used for capturing a visible light to near infrared spectrum of 700-880 nm, and a bottom battery in the bottom layer is made of a Ge material and is used for absorbing a long wavelength spectrum of 880-1750 nm with stronger penetrability. The sectional type spectrum absorption design maximally improves the utilization efficiency of the full-band solar spectrum, and is a core source of the performance advantages of the multi-junction battery. It should be noted that the structure of the semiconductor solar cell is very fragile, and in a complex space environment of an aerospace task, the semiconductor solar cell is susceptible to external factors such as laser irradiation and space high-energy particle bombardment, so that defects, lattice damage and other damage are generated in the cell to different extents, and the working performance of the subcell is further remarkably attenuated. Particularly, the semiconductor materials, band gap widths and structural parameters of all sub-cells in the multi-junction semiconductor cell have obvious differences, so that the damage mechanism and the damage degree of all the sub-cells have obvious heterogeneity under the action of different external factors, and the influence weights of the damage of all the sub-cells on the photoelectric conversion