CN-122026836-A - Three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and construction method

CN122026836ACN 122026836 ACN122026836 ACN 122026836ACN-122026836-A

Abstract

The invention discloses a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a construction method thereof, and relates to the technical field of single-chip microwave integrated circuits of power amplifiers, wherein the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation comprises a first circuit layer, an adapter plate circuit and a second circuit layer, and the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider and a balanced power amplifier unit; the second circuit layer comprises a control power amplifier unit and an ultra-wideband phase-shifting attenuation unit. The invention simultaneously adjusts the amplitude and the phase of the radio frequency signal through the ultra-wideband phase-shifting attenuation unit to realize the expansion of adjustable dimension, and carries out active load modulation on the source impedance and the load impedance of the balanced power amplification unit through the unequal power divider to realize double-path cooperative modulation. The invention adopts a three-dimensional structure, so that the overall size of the amplifier is obviously miniaturized.

Inventors

WANG GUANGNIAN
TAO HONGQI
Guo Runnan
CHEN YAN

Assignees

中国电子科技集团公司第五十五研究所

Dates

Publication Date: 20260512
Application Date: 20260413

Claims (10)

1. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation is characterized by comprising a first circuit layer, a second circuit layer and an adapter plate circuit; the method comprises the steps of receiving radio frequency signals by a first circuit layer, distributing partial radio frequency signals to a second circuit layer through an adapter plate circuit based on a preset proportion, carrying out balanced amplification on the rest radio frequency signals which are not distributed, adjusting the amplitude and the phase of the distributed radio frequency signals by the second circuit layer, amplifying the adjusted radio frequency signals, further transmitting the amplified radio frequency signals to the first circuit layer through the adapter plate circuit, combining the amplified radio frequency signals and the radio frequency signals amplified by the second circuit layer by the first circuit layer, and outputting the combined radio frequency signals.
2. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 1, wherein the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider and a balanced power amplifier unit, and the second circuit layer comprises a control power amplifier unit and an ultra-wideband phase-shifting attenuation unit; When the three-dimensional connection structure is formed based on the first circuit layer, the adapter plate circuit and the second circuit layer which are applied in a stacking mode from bottom to top, the input end of the first ultra-wideband coupler forms the input end of the three-dimensional connection structure, the first input end of the second ultra-wideband coupler is connected with the first output end of the first ultra-wideband coupler, the first input end of the adapter plate circuit is connected with the second output end of the first ultra-wideband coupler, the first ultra-wideband coupler receives radio frequency signals and distributes the radio frequency signals to the first input end of the second ultra-wideband coupler and the first input end of the adapter plate circuit according to a preset proportion, the second ultra-wideband coupler receives the radio frequency signals distributed by the first ultra-wideband coupler and distributes the received radio frequency signals to the balance power amplification unit, and the adapter plate circuit receives the radio frequency signals distributed by the first ultra-wideband coupler and distributes the received radio frequency signals to the ultra-wideband phase-shifting attenuation unit; The balance power amplification unit receives the radio frequency signals distributed by the second ultra-wideband coupler, realizes balance amplification of the radio frequency signals, and outputs the radio frequency signals to the third ultra-wideband coupler; The input end of the control power amplification unit is connected with the output end of the ultra-wideband phase-shifting attenuation unit, and the ultra-wideband phase-shifting attenuation unit adjusts and updates the amplitude and the phase of the received radio frequency signal and outputs the radio frequency signal to the control power amplification unit; The input end of the unequal power divider is connected with the second output end of the adapter plate circuit, the second input end of the second ultra-wideband coupler is connected with the first output end of the unequal power divider, and the third input end of the third ultra-wideband coupler is connected with the second output end of the unequal power divider; and the output end of the third ultra-wideband coupler forms the output end of the three-dimensional connecting structure.
3. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 2, wherein the ultra-wideband phase-shift attenuation unit comprises an ultra-wideband five-bit phase shifter and an ultra-wideband four-bit attenuator; The input end of the ultra-wideband five-bit phase shifter is the input end of the ultra-wideband phase-shifting attenuation unit, the output end of the ultra-wideband five-bit phase shifter is connected with the input end of the ultra-wideband four-bit attenuator, and the output end of the ultra-wideband four-bit attenuator is the output end of the ultra-wideband phase-shifting attenuation unit.
4. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 2, wherein the balanced power amplification unit comprises two sub power amplification units with the same structure, the input ends of the two sub power amplification units are respectively connected with the two output ends of the second ultra-wideband coupler, and the two sub power amplification units receive the radio frequency signals distributed by the second ultra-wideband coupler to realize balanced amplification of the radio frequency signals.
5. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 2, wherein the balanced power amplifying unit comprises a first resistor R 1 to a fourteenth resistor R 14 , a first microstrip line TL 1 to a twenty-sixth microstrip line TL 26 , a first capacitor C 1 to an eighteenth capacitor C 18 , a first high electron mobility transistor HEMT 1 to a fourth high electron mobility transistor HEMT 4 ; One end of the first resistor R 1 is used as a first input end of a balanced power amplification unit, the other end of the first resistor R 1 is respectively connected with one ends of a second resistor R 2 and a third resistor R 3 , the other end of the second resistor R 2 is grounded, the other end of the third resistor R 3 is respectively connected with one ends of a first microstrip line TL 1 and a first capacitor C 1 , the other end of the first microstrip line TL 1 is grounded, the other end of the first capacitor C 1 is respectively connected with one ends of a second capacitor C 2 and a second microstrip line TL 2 , the other end of the second capacitor C 2 is grounded, the other end of the second microstrip line TL 2 is respectively connected with one ends of a third capacitor C 3 and a third microstrip line TL 3 , the other end of the third capacitor C 3 is grounded, and the other end of the third microstrip line TL 3 is respectively connected with a fourth capacitor C 4 , A fourth resistor R 4 , One end of a fifth resistor R 5 is connected; the other end of the fourth resistor R 4 is connected with one end of the fourth microstrip line TL 4 , the other end of the fourth microstrip line TL 4 is connected with one end of a fifth capacitor C 4 , the other end of the fifth capacitor C 4 is grounded, the other end of the fifth resistor R 4 is connected with the other end of the fourth capacitor C 4 and one end of the fifth microstrip line TL 4 respectively, the other end of the fifth microstrip line TL 4 is connected with the sixth microstrip line TL 4 and one end of the seventh microstrip line TL 4 respectively, the other end of the sixth microstrip line TL 4 is connected with one end of the sixth resistor R 4 and the gate of a first high electron mobility transistor 4 respectively, the other end of the seventh microstrip line TL 4 is connected with the other end of the sixth resistor R 4 and the gate of the first high electron mobility transistor 4 respectively, the other end of the seventh microstrip line TL 4 is connected with the other end of the fourth capacitor C 4 and the gate of the second high electron mobility transistor 4 respectively, the source electrode of the first high electron mobility transistor TL 2 is grounded, the source electrode of the second high electron mobility transistor 4 is grounded, the source electrode of the first high electron mobility transistor TL 2 is connected with the first microstrip line TL 4 and the other end of the eighth microstrip line 4 and the eighth microstrip line 4 , the other end of the first high electron mobility transistor 4 is connected with the other end of the eighth microstrip line 4 and the other end of the eighth microstrip line 4 are connected with the other end of the eighth microstrip line 4 and the other end of the eighth microstrip line 4 One end of the eleventh microstrip line TL 11 is connected with one end of the sixth capacitor C 6 , the other end of the sixth capacitor C 6 is grounded, the twelfth microstrip line TL 12 The other end of the thirteenth microstrip line TL 13 is respectively connected with one ends of an eighth capacitor C 8 and a ninth capacitor C 9 , the other end of the eighth capacitor C 8 is grounded, and the other end of the ninth capacitor C 9 is used as a first output end of a balanced power amplification unit; one end of the eighth resistor R 8 is used as a second input end of the balanced power amplification unit, the other end of the eighth resistor R 8 is connected with one ends of a ninth resistor R 9 and a tenth resistor R 10 respectively, the other end of the ninth resistor R9 is grounded, the other end of the tenth resistor R 10 is connected with one ends of a fourteenth microstrip line TL 14 and a tenth capacitor C 10 respectively, the other end of the fourteenth microstrip line TL 14 is grounded, the other end of the tenth capacitor C 10 is connected with one ends of an eleventh capacitor C 11 and a fifteenth microstrip line TL 15 respectively, the other end of the eleventh capacitor C 11 is grounded, the other end of the fifteenth microstrip line TL 15 is connected with one ends of a twelfth capacitor C 12 and a sixteenth microstrip line TL 16 respectively, the other end of the twelfth capacitor C 12 is grounded, the other end of the sixteenth microstrip line TL 16 is connected with a thirteenth capacitor C 13 respectively, eleventh resistor R 11 , one end of the twelfth resistor R 12 is connected; the other end of the eleventh resistor R 11 is connected with one end of the seventeenth microstrip line TL 17 ; the other end of the seventeenth microstrip line TL 17 is connected to one end of the fourteenth capacitor C 14 , the other end of the fourteenth capacitor C 14 is grounded, the other end of the twelfth resistor R 12 is connected to the other end of the thirteenth capacitor C 13 and one end of the eighteenth microstrip line TL 18 , the other end of the eighteenth microstrip line TL 18 is connected to one end of the nineteenth microstrip line TL 19 and the twenty-first microstrip line TL 20 , the other end of the nineteenth microstrip line TL 19 is connected to the gate of the thirteenth resistor R 19 and the third high electron mobility transistor HEMT 19 , the other end of the twenty-first microstrip line 19 is connected to the gate of the thirteenth resistor R 19 and the fourth high electron mobility transistor HEMT 19 , the source of the third high electron mobility transistor HEMT 19 is grounded, the drain of the fourth high electron mobility transistor 19 is connected to the drain of the twenty-first microstrip line TL 2 and the twenty-first microstrip line TL 19 , the other end of the twenty-first microstrip line TL 19 is connected to the gate of the twenty-first microstrip line 19 and the twenty-first microstrip line 19 , the other end of the twenty-first microstrip line 19 is connected to the other end of the twenty-first high electron mobility transistor 19 , the source of the thirteenth resistor R 19 is grounded, the source of the thirteenth high electron mobility transistor 19 is grounded, the twenty-high electron mobility transistor is connected to the source of the twenty-third microstrip line 19 is connected to the other end of the thirteenth capacitor, and the twenty-high microstrip line is connected to the other end of the twenty-third microstrip line 23 The other end of the twenty-fourth microstrip line TL 24 is connected with one end of a fifteenth capacitor C 15 , and the other end of the twenty-fourth microstrip line TL 24 is connected with one end of a twenty-fifth microstrip line TL 25 15 The other end of the twenty-fifth microstrip line TL 25 is respectively connected with one end of a sixteenth capacitor C 16 and one end of a twenty-sixth microstrip line TL 26 , the other end of the sixteenth capacitor C 16 is grounded, the other end of the twenty-sixth microstrip line TL 26 is respectively connected with one end of a seventeenth capacitor C 17 and one end of an eighteenth capacitor C 18 , the other end of the seventeenth capacitor C 17 is grounded, and the other end of the eighteenth capacitor C 18 is used as a second output end of the balanced power amplifier unit.
6. The three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation according to claim 2, wherein the control power amplifying unit comprises fifteenth resistors R 15 to eighteenth resistor R 18 , twenty-seventh microstrip lines TL 27 to thirty-second microstrip lines TL 32 , nineteenth capacitors C 19 to twenty-fourth capacitors C 24 , and fifth high electron mobility transistors HEMTs 5 ; one end of the fifteenth resistor R 15 is used as an input end for controlling the power amplifier unit; the other end of the fifteenth resistor R 15 is connected with one end of the sixteenth resistor R 16 and one end of the seventeenth resistor R 17 respectively; the other end of the sixteenth resistor R 16 is grounded, the other end of the seventeenth resistor R 17 is connected with one end of a nineteenth capacitor C 19 , the other end of the nineteenth capacitor C 19 is connected with one end of a twenty seventh microstrip line TL 27 , the other end of the twenty seventh microstrip line TL 27 is respectively connected with one ends of a twenty first capacitor C 27 and an twenty eighth microstrip line TL 27 , the other end of the twenty first capacitor C 27 is grounded, the other end of the twenty eighth microstrip line TL 27 is respectively connected with one end of the eighteenth resistor R 27 and the gate of a fifth high electron mobility transistor 27 , the other end of the eighteenth resistor R 27 is connected with one end of the twenty ninth microstrip line TL 27 , the other end of the twenty ninth microstrip line TL 27 is connected with one end of the twenty first capacitor C 27 , the other end of the twenty first capacitor C 27 is grounded, the source of the fifth high electron mobility transistor 27 is grounded, the fifth high electron mobility transistor TL 27 is respectively connected with the other end of the twenty first capacitor C 27 , the thirty first microstrip line TL 2 is connected with the other end of the thirty first microstrip line 27 , the thirty first end of the thirty first microstrip TL 2 is connected with the thirty first end of the thirty first microstrip line 27 , the thirty first end of the thirty high electron mobility transistor 27 is connected with the other end of the twenty first microstrip One end of the thirty-second microstrip line TL 32 is grounded, the other end of the thirty-second microstrip line TL 32 is connected with one end of a twenty-third capacitor C 23 and one end of a twenty-fourth capacitor C 24 respectively, the other end of the twenty-third capacitor C 23 is grounded, and the twenty-fourth capacitor C 24 The other end of the power amplifier is used as an output end of the control power amplifier unit.
7. A method for constructing a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation is used for constructing the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation as claimed in claim 2, and is characterized in that the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation is applied in a stacked mode from bottom to top based on a first circuit layer, an adapter plate circuit and a second circuit layer, when a three-dimensional connecting structure is formed, the first circuit layer is electrically connected with the lower surface of the adapter plate circuit through metal micro-bumps on the upper surface of the first circuit layer, the adapter plate circuit realizes the electrical connection of the upper surface and the lower surface of the adapter plate circuit through copper through holes penetrating the upper surface and the lower surface of the adapter plate circuit, and the upper surface of the adapter plate circuit is attached to the lower surface of the second circuit layer and is electrically connected with the upper surface of the second circuit layer through wire bonding.
8. The method for constructing a three-dimensional ultra wideband reconfigurable power amplifier based on cooperative modulation according to claim 7, wherein the first circuit layer further comprises a first parasitic compensation network and a second parasitic compensation network, and the second circuit layer further comprises a third parasitic compensation network and a fourth parasitic compensation network; The input end of the first parasitic compensation network is connected with the second output end of the first ultra-wideband coupler, the output end of the parasitic compensation network is connected with the first input end of the adapter plate circuit, the input end of the second parasitic compensation network is connected with the second output end of the adapter plate circuit, the output end of the second parasitic compensation network is connected with the input end of the unequal power divider, the input end of the third parasitic compensation network is connected with the first output end of the adapter plate circuit, the output end of the third parasitic network is connected with the input end of the ultra-wideband phase-shifting attenuation unit, the input end of the fourth parasitic compensation network is connected with the output end of the control power amplification unit, and the output end of the fourth parasitic compensation network is connected with the second input end of the adapter plate circuit.
9. The method for constructing the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation as claimed in claim 7, wherein the metal micro-bumps comprise connection metal micro-bumps and support metal micro-bumps, the connection metal micro-bumps are used for connecting the first circuit layer and copper through holes of the circuit adapter plate to realize transmission of radio frequency signals, and the support metal micro-bumps are used for enabling the first circuit layer and the circuit of the adapter plate to be stably connected.
10. The method for constructing the three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation as claimed in claim 7, wherein the balanced power amplifier unit comprises two sub power amplifier units with the same structure, and a ground hole structure which is transversely arranged is arranged between the two sub power amplifier units, so as to avoid the mutual influence of radio frequency signals between the two sub power amplifier units.

Description

Three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and construction method Technical Field The invention relates to the technical field of power amplifier monolithic microwave integrated circuits, in particular to a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a construction method. Background The ultra-wideband reconfigurable power amplifier is a core front-end device of a modern multifunctional radio frequency system, and has the core value that the comprehensive performance of a plurality of sets of narrow-band and fixed-function power amplifiers can be approximated or even exceeded by using only one set of hardware platform through real-time electric tuning, so that the urgent requirements of modern communication, radar and other systems on multifunctional integration, miniaturization, low power consumption and high adaptability are met. The control power amplifier unit of the existing ultra-wideband power amplifier only carries out active load modulation on the load impedance of the balance power amplifier unit, no special treatment is carried out on the source impedance of the balance power amplifier unit, the source impedance is closely related to indexes such as output power, gain, input standing wave, efficiency and stability, and meanwhile, the circuit unit additionally introduced by the existing ultra-wideband power amplifier for realizing the 'reconfigurable' function can obviously increase the overall size of the amplifier. Therefore, it is needed to construct an ultra-wideband power amplifier that combines two-way co-modulation with three-dimensional integration to improve the output efficiency, impedance matching, gain flatness and overall stability of the ultra-wideband power amplifier, and achieve significant miniaturization. Disclosure of Invention In order to solve the technical problems, the invention provides a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation and a construction method. In order to achieve the above purpose, the invention adopts the following technical scheme: The invention provides a three-dimensional ultra-wideband reconfigurable power amplifier based on cooperative modulation, which comprises a first circuit layer, a second circuit layer and an adapter plate circuit; the radio frequency signals are received by the first circuit layer, partial radio frequency signals are distributed to the second circuit layer through the adapter plate circuit based on a preset proportion, balance amplification is carried out on the rest radio frequency signals which are not distributed, the second circuit layer adjusts the amplitude and the phase of the distributed radio frequency signals, the adjusted radio frequency signals are amplified, the amplified radio frequency signals are further transmitted to the first circuit layer through the adapter plate circuit, and the balanced amplified radio frequency signals and the radio frequency signals amplified by the second circuit layer are combined by the first circuit layer and the combined radio frequency signals are output. Further, the first circuit layer comprises a first ultra-wideband coupler, a second ultra-wideband coupler, a third ultra-wideband coupler, an unequal power divider and a balanced power amplifier unit, and the second circuit layer comprises a control power amplifier unit and an ultra-wideband phase-shifting attenuation unit; When the three-dimensional connection structure is formed based on the first circuit layer, the adapter plate circuit and the second circuit layer which are applied in a stacking mode from bottom to top, the input end of the first ultra-wideband coupler forms the input end of the three-dimensional connection structure, the first input end of the second ultra-wideband coupler is connected with the first output end of the first ultra-wideband coupler, the first input end of the adapter plate circuit is connected with the second output end of the first ultra-wideband coupler, the first ultra-wideband coupler receives radio frequency signals and distributes the radio frequency signals to the first input end of the second ultra-wideband coupler and the first input end of the adapter plate circuit according to a preset proportion, the second ultra-wideband coupler receives the radio frequency signals distributed by the first ultra-wideband coupler and distributes the received radio frequency signals to the balance power amplification unit, and the adapter plate circuit receives the radio frequency signals distributed by the first ultra-wideband coupler and distributes the received radio frequency signals to the ultra-wideband phase-shifting attenuation unit; The balance power amplification unit receives the radio frequency signals distributed by the second ultra-wideband coupler, realizes balance amplification of the radio frequency signals, and outputs the