CN-122026896-A - Inverter based on carbon nanotube transistor and electronic device

Abstract

The invention provides an inverter based on a carbon nanotube transistor and an electronic device, which relate to the technical field of circuits. In addition, the PMOS and the NMOS in the inverter are both in common gate structures as gate areas, so that the area of the inverter can be greatly reduced, and the integration level of the inverter is increased.

Inventors

• YU YANG
• YUAN YUANDONG
• CHEN YONGQIANG
• GONG XUEMIN
• NI PING

Assignees

• 北京大学重庆碳基集成电路研究院

Dates

Publication Date

20260512

Application Date

20251204

Claims (10)

1. 1. An inverter based on a carbon nanotube transistor is characterized by comprising a network carbon nanotube, a common gate structure, a PMOS source region and a PMOS drain region, and an NMOS source region and an NMOS drain region; The network carbon nanotube comprises a first carbon nanotube area and a second carbon nanotube area which are arranged at intervals along a first direction, and a third carbon nanotube area and a fourth carbon nanotube area which are arranged at intervals along a second direction, wherein a source area and a drain area of the PMOS are respectively arranged on the first carbon nanotube area and the second carbon nanotube area; the common gate structure is isolated from the network carbon nanotube and is used for being used as gate areas of the PMOS and the NMOS to be connected with input voltage; The source region of the PMOS is connected with positive power supply voltage, and the source region of the NMOS is grounded; The drain region of the PMOS is connected with the drain region of the NMOS and is used for providing output voltage.
2. 2. The carbon nanotube transistor-based inverter of claim 1, wherein the network carbon nanotubes further comprise a central region between the first carbon nanotube region, the second carbon nanotube region, the third carbon nanotube region, and the fourth carbon nanotube region; the central area is provided with a channel; The PMOS and the NMOS share the channel; the channel is used for connecting the source region and the drain region of the PMOS and connecting the source region and the drain region of the NMOS.
3. 3. The carbon nanotube transistor-based inverter of claim 1, further comprising an insulating layer and a substrate; the network carbon nano tube is arranged on the substrate, and the insulating layer is positioned between the common grid structure and the network carbon nano tube; Or the common grid structure is arranged on the substrate, and the insulating layer is positioned between the common grid structure and the network carbon nano tube.
4. 4. The carbon nanotube transistor-based inverter of claim 1, wherein the PMOS source and drain regions are implemented by first and second contact layers fabricated on the first and second carbon nanotube regions, respectively.
5. 5. The carbon nanotube transistor-based inverter of claim 4, wherein the material of the first contact layer and the second contact layer are both materials that cause the carbon nanotube transistor to exhibit P-type polarity.
6. 6. The carbon nanotube transistor-based inverter of claim 4, wherein the source and drain regions of the NMOS are implemented by a third contact layer and a fourth contact layer fabricated on the third and fourth carbon nanotube regions, respectively.
7. 7. The carbon nanotube transistor-based inverter of claim 6, wherein the material of the third contact layer and the fourth contact layer are both materials that render the carbon nanotube transistor N-type polar.
8. 8. The carbon nanotube transistor-based inverter of claim 6, wherein the polarity of the NMOS is adjusted by work functions of the first contact layer and the second contact layer; The polarity of the PMOS is regulated by the work functions of the third contact layer and the fourth contact layer.
9. 9. The carbon nanotube transistor-based inverter of any one of claims 1-8, wherein the first direction is perpendicular to the second direction.
10. 10. An electronic device comprising a carbon nanotube transistor-based inverter as claimed in any one of claims 1-9.

Description

Inverter based on carbon nanotube transistor and electronic device Technical Field The present invention relates to the field of circuit technologies, and in particular, to an inverter based on a carbon nanotube transistor and an electronic device. Background As shown in fig. 1, the complementary metal Oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) inverter includes a P-channel metal-Oxide-semiconductor field effect transistor (P-CHANNEL METAL-Oxide-Semiconductor Field-Effect Transistor, PMOS) and an N-channel metal-Oxide-semiconductor field effect transistor (N-CHANNEL METAL-Oxide-Semiconductor Field-Effect Transistor, NMOS), both the gate (G) of the PMOS and the gate (G) of the NMOS are connected to the input voltage Vin, the source (S) of the PMOS is connected to the power supply VDD, the source ground line of the NMOS, the drain (D) of the PMOS is connected to the drain of the NMOS and the output voltage Vout is obtained. The CMOS inverter has a simple structure. The output voltage Vout is 1 when the input voltage Vin is 0, and the output voltage Vout is 0 when the input voltage Vin is 1. By combining the characteristics of NMOS and PMOS, the low-power consumption application of the CMOS inverter can be realized. The existing CMOS inverter adopts silicon-based COMS technology, namely PMOS and NMOS are built on a silicon substrate, and the core logic is to integrate more devices in the same chip area by reducing the size of a transistor, so that the performance is improved and the power consumption is reduced. However, limited by physical limits, in the prior process of silicon-based cmos, quantum tunneling is aggravated, current is easily leaked out of control, and performance gain due to the reduction of the size of silicon-based cmos is gradually decreased. Moreover, advanced process chips have a power density exceeding 100W/cm 2, and dense silicon-based COMS results in difficulty in rapid dissipation of heat, which may affect chip stability. In addition, the preparation process of the silicon-based COMS is complex, the yield is difficult to control, and the realization cost is high. Disclosure of Invention The invention provides an inverter based on a carbon nanotube transistor and an electronic device, which are used for solving the defects in the related art. The invention provides an inverter based on a carbon nanotube transistor, which comprises a network carbon nanotube, a common gate structure, a PMOS source region and a PMOS drain region, and an NMOS source region and an NMOS drain region; The network carbon nanotube comprises a first carbon nanotube area and a second carbon nanotube area which are arranged at intervals along a first direction, and a third carbon nanotube area and a fourth carbon nanotube area which are arranged at intervals along a second direction, wherein a source area and a drain area of the PMOS are respectively arranged on the first carbon nanotube area and the second carbon nanotube area; the common gate structure is isolated from the network carbon nanotube and is used for being used as gate areas of the PMOS and the NMOS to be connected with input voltage; The source region of the PMOS is connected with positive power supply voltage, and the source region of the NMOS is grounded; The drain region of the PMOS is connected with the drain region of the NMOS and is used for providing output voltage. According to the inverter based on the carbon nanotube transistor provided by the invention, the network carbon nanotube further comprises a central area positioned among the first carbon nanotube area, the second carbon nanotube area, the third carbon nanotube area and the fourth carbon nanotube area; the central area is provided with a channel; The PMOS and the NMOS share the channel; the channel is used for connecting the source region and the drain region of the PMOS and connecting the source region and the drain region of the NMOS. The invention provides an inverter based on a carbon nano tube transistor, which also comprises an insulating layer and a substrate; the network carbon nano tube is arranged on the substrate, and the insulating layer is positioned between the common grid structure and the network carbon nano tube; Or the common grid structure is arranged on the substrate, and the insulating layer is positioned between the common grid structure and the network carbon nano tube. According to the inverter based on the carbon nanotube transistor, the source region and the drain region of the PMOS are respectively realized through the first contact layer and the second contact layer which are respectively prepared on the first carbon nanotube region and the second carbon nanotube region. According to the inverter based on the carbon nanotube transistor, the first contact layer and the second contact layer are both made of a material enabling the carbon nanotube transistor to present P-type polarity. According to the inverter based on the carbon