CN-122028288-A - Remote plasma system and semiconductor device

CN122028288ACN 122028288 ACN122028288 ACN 122028288ACN-122028288-A

Abstract

The invention discloses a remote plasma system and semiconductor equipment, wherein the remote plasma system comprises a microwave generation module, a reaction chamber, a microwave impedance matcher and at least two coaxial lines, the reaction chamber comprises a first coaxial interface, a discharge probe and a vacuum chamber, the microwave generation module is electrically connected with the microwave impedance matcher through the coaxial lines, the microwave impedance matcher is electrically connected with the first coaxial interface of the reaction chamber through the coaxial lines, the discharge probe is electrically connected with the first coaxial interface, the discharge probe is positioned outside the vacuum chamber, and the discharge probe is used for releasing microwave energy to ionize process gas in the vacuum chamber. The invention provides a remote plasma system and a semiconductor device, which have simple structure and convenient use, can improve the installation efficiency, reduce the manufacturing cost, and prolong the service life and the plasma purity.

Inventors

LI SHUYU
GONG ZHIHUAN
LIU HAO
WANG CHAO

Assignees

天津吉兆源科技有限公司

Dates

Publication Date: 20260512
Application Date: 20260324

Claims (10)

1. The remote plasma system is characterized by comprising a microwave generation module, a reaction chamber, a microwave impedance matcher and at least two coaxial lines; The reaction chamber comprises a first coaxial interface, a discharge probe and a vacuum cavity; the microwave generation module is electrically connected with the microwave impedance matcher through the coaxial line, and the microwave impedance matcher is electrically connected with the first coaxial interface of the reaction chamber through the coaxial line; The discharge probe is electrically connected with the first coaxial interface; the discharge probe is located outside the vacuum chamber and is configured to release microwave energy to ionize process gases within the vacuum chamber.
2. The remote plasma system of claim 1, wherein the vacuum chamber comprises a recess, the discharge probe being located within the recess.
3. The remote plasma system of claim 1, wherein the microwave generation module is a solid state microwave source or a magnetron; the output power of the microwave generating module ranges from 0W to 1500W.
4. The remote plasma system of claim 1, wherein the microwave impedance matcher comprises: A shield; The second coaxial interface is used for being electrically connected with the output end of the microwave generation module through a coaxial line, and the third coaxial interface is used for being electrically connected with the reaction chamber through the coaxial line; at least three pin units, each pin unit comprising a drive mechanism and a pin; the microstrip line is arranged in the shielding case, the input end of the microstrip line is electrically connected with the second coaxial interface, and the output end of the microstrip line is electrically connected with the third coaxial interface; And the acquisition control module is used for acquiring the reflected power returned from the reaction chamber and controlling each driving mechanism according to the reflected power so as to control the depth of each pin penetrating into the shielding cover.
5. The remote plasma system of claim 4, wherein the microstrip line has a length ranging from 60mm to 100mm; The width range of the microstrip line is 5 mm-15 mm.
6. The remote plasma system of claim 4, wherein a distance between two adjacent pins is a quarter-wavelength microstrip line.
7. The remote plasma system of claim 4, wherein the shape of the shield comprises a cuboid; the shape of the microstrip line includes a rectangular parallelepiped.
8. The remote plasma system of claim 4, wherein the microwave impedance matcher further comprises at least one support post; The support column is positioned at the bottom of the shielding case; The support column is used for supporting the microstrip line.
9. The remote plasma system of claim 4, wherein the material of the shield comprises aluminum or copper.
10. A semiconductor device comprising the remote plasma system of any of claims 1-9.

Description

Remote plasma system and semiconductor device Technical Field The present invention relates to the field of semiconductor technologies, and in particular, to a remote plasma system and a semiconductor device. Background Plasma discharge is used to generate a gas excitation of reactive gases containing ions, radicals, atoms and molecules. Reactive gases are used in a wide variety of applications, the most representative of which are etching, evaporation, cleaning, polishing, etc. in semiconductor manufacturing processes. A remote plasma system is a system for generating a plasma outside of a process chamber that is supplied to the process chamber in a remote manner. The most representative semiconductor manufacturing process utilizing a remote plasma source system is, for example, a cleaning process for cleaning the interior of a process chamber, but is also used in other semiconductor manufacturing processes. The plasmas generated by the existing remote plasma system contain some impurities, cannot meet the industrial production requirements in the fields of film material deposition, surface treatment and the like, and also have the problems of complex installation, high manufacturing cost and the like. Disclosure of Invention The invention provides a remote plasma system and a semiconductor device, which have simple structure and convenient use, can improve the installation efficiency, reduce the manufacturing cost, and prolong the service life and the plasma purity. According to an aspect of the present invention, there is provided a remote plasma system including a microwave generating module, a reaction chamber, a microwave impedance matcher, and at least two coaxial lines; The reaction chamber comprises a first coaxial interface, a discharge probe and a vacuum cavity; the microwave generation module is electrically connected with the microwave impedance matcher through the coaxial line, and the microwave impedance matcher is electrically connected with the first coaxial interface of the reaction chamber through the coaxial line; The discharge probe is electrically connected with the first coaxial interface; the discharge probe is located outside the vacuum chamber and is configured to release microwave energy to ionize process gases within the vacuum chamber. Optionally, the vacuum cavity includes a recess, and the discharge probe is located in the recess. Optionally, the microwave generating module is a solid-state microwave source or a magnetron; the output power of the microwave generating module ranges from 0W to 1500W. Optionally, the microwave impedance matcher includes: A shield; The second coaxial interface is used for being electrically connected with the output end of the microwave generation module through a coaxial line, and the third coaxial interface is used for being electrically connected with the reaction chamber through the coaxial line; at least three pin units, each pin unit comprising a drive mechanism and a pin; the microstrip line is arranged in the shielding case, the input end of the microstrip line is electrically connected with the second coaxial interface, and the output end of the microstrip line is electrically connected with the third coaxial interface; And the acquisition control module is used for acquiring the reflected power returned from the reaction chamber and controlling each driving mechanism according to the reflected power so as to control the depth of each pin penetrating into the shielding cover. Optionally, the length range of the microstrip line is 60 mm-100 mm; The width range of the microstrip line is 5 mm-15 mm. Optionally, the distance between two adjacent pins is a quarter wavelength microstrip line. Optionally, the shape of the shielding cover comprises a cuboid; the shape of the microstrip line includes a rectangular parallelepiped. Optionally, the microwave impedance matcher further includes at least one support post; The support column is positioned at the bottom of the shielding case; The support column is used for supporting the microstrip line. Optionally, the material of the shielding case includes aluminum or copper. According to another aspect of the present invention, there is provided a semiconductor device comprising the remote plasma system provided by any of the embodiments of the present invention. The embodiment of the invention provides a remote plasma system, wherein a microwave generating module, a microwave impedance matcher and a reaction chamber in the system are electrically connected through coaxial lines in sequence, the structure is simple, the installation is convenient, the installation efficiency is improved, and the manufacturing cost is reduced. In addition, the reaction chamber comprises a discharge probe arranged outside the vacuum chamber, and the process gas is ionized by the discharge probe to generate plasma, so that the microwave utilization rate is improved. According to the embodiment of the invention, the disch