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CN-122028294-A - High-heat-dissipation substrate and processing method thereof

CN122028294ACN 122028294 ACN122028294 ACN 122028294ACN-122028294-A

Abstract

The invention discloses a high-heat-dissipation substrate and a processing method thereof, wherein a circuit pattern A of an operation plate is provided with a heat dissipation block, a copper foil build-up layer A is laminated on the operation plate, a laser is arranged on the surface of the copper foil build-up layer A, a caulking groove with the heat dissipation block as a groove bottom is formed by opening, a seed layer is deposited on the whole plate, a plating-resistant photosensitive dry film with a notch is covered on the seed layer, the notch completely falls into the caulking groove, a copper column A is obtained by hole filling and electroplating the notch, a gap between the copper column A and the inner wall of the caulking groove is electroplated to form a copper column B filled with the gap, a heat dissipation structure embryonic form formed by the copper column B, the copper column A and the seed layer adjacent to the copper column A is obtained, the whole plate is electroplated to obtain a heat dissipation structure A and the copper foil build-up layer B which are connected in a flush manner, and the circuit pattern B is electrically communicated with the circuit pattern A through the heat dissipation structure A is obtained by performing circuit manufacturing on the copper foil build-up layer B. The processing method is reasonable and simple, is easy to operate and implement, and the obtained substrate is high in reliability and good in heat dissipation effect, and meets the high-density packaging requirement.

Inventors

  • ZONG XINRU
  • YANG FEI
  • ZHANG HAI
  • MA HONGWEI

Assignees

  • 江苏普诺威电子股份有限公司

Dates

Publication Date
20260512
Application Date
20260203

Claims (10)

  1. 1. A processing method of a high-heat-dissipation substrate is characterized by comprising the following processing steps: s1, providing an operation board with a circuit pattern A on the surface layer, wherein the circuit pattern A is provided with a heat dissipation block (10) which plays roles in conduction and heat dissipation; S2, laminating an insulating layer (20) and a copper foil layer A (21) on the surface layer of the operation plate, and then laser burning grooves to process caulking grooves (3) which are opened on the surface of the copper foil layer A (21) and at least partially form groove bottoms of the radiating blocks (10); s3, depositing a seed layer (4) on the whole plate, and coating a plating-resistant photosensitive dry film (5) with a notch (50) on the seed layer (4) through a dry film pattern transfer process, wherein the notch (50) completely falls into the range of the caulking groove (3); S4, performing hole filling electroplating on the notch (50) to obtain a copper column A (6), and then removing the film; S5, hole filling electroplating is carried out on a gap between the copper column A (6) and the inner wall of the caulking groove (3) to form a copper column B (7) filled in the gap, so as to obtain a heat dissipation structure embryonic form which is formed by the copper column B (7), the copper column A (6) and the seed layer (4) adjacent to the copper column A and the copper column A, and then whole plate electroplating is carried out to thicken the heat dissipation structure embryonic form and the copper foil build-up layer A (21) simultaneously to obtain a heat dissipation structure A and a copper foil build-up layer B (8) which are connected in a flush manner; s6, carrying out circuit manufacture on the copper foil build-up layer B (8) to obtain a circuit pattern B (80), wherein the circuit pattern B (80) is electrically communicated with the circuit pattern A through the heat dissipation structure A.
  2. 2. The method of claim 1, wherein in S3, a distance between the inner wall of the notch (50) and the inner wall of the embedded groove (3) is 60-120 μm, and a distance between the center of the notch (50) and the inner wall of the embedded groove (3) is not less than 140 μm.
  3. 3. The method according to claim 1, wherein in the step S3, the seed layer (4) having a thickness of 2.5-6 μm is processed by at least one of PVD, CVD and flash plating.
  4. 4. The method for processing a high heat dissipating substrate as set forth in claim 1, wherein in S4, the copper pillar A (6) formed by the via-fill plating is higher than the surface of the copper foil build-up layer A (21) and the difference in height between the two is controlled to be within + -7 μm; After the plating-resistant photosensitive dry film (5) is removed, the copper pillar A (6) is also subjected to size correction so that the height difference between the surface of the copper pillar A (6) and the surface of the copper foil build-up layer A (21) is controlled within 3 mu m.
  5. 5. The method of claim 1, wherein in S4 and S5, the machining parameters of the hole-filling plating are that the concentration of monovalent chloride ions in the plating solution is 30-50 ppm, the concentration of cupric ions is 10-13 g/L, the concentration of sulfuric acid is 195-220 g/L, the temperature of the plating solution is 22-25 ℃, the cathode current density is 5-10 ASD, and the plating efficiency is 2-3 μm/min.
  6. 6. The method for processing a high heat dissipation substrate according to claim 1, wherein in the step S5, the processing parameters of the whole plate electroplating are that the monovalent chloride ion concentration in the electroplating solution is 30-50 ppm, the divalent copper ion concentration is 10-13 g/L, the sulfuric acid concentration is 195-220 g/L, the temperature of the electroplating solution is 22-25 ℃, the cathode current density is not more than 1.2ASD, and the electroplating efficiency is gradually decreased from top to bottom, so that the copper thickness uniformity of the heat dissipation structure A and the copper foil build-up layer B (8) is controlled within +/-3 μm.
  7. 7. The method for processing a high heat dissipation substrate according to claim 1, wherein in the step S2, a CO 2 laser is used for laser groove burning, and the processing parameters of the CO 2 laser are that the laser energy is 2-6 mJ, the pulse width is 4-6 mu S, and the number of laser shots is 1-5.
  8. 8. The method of manufacturing a high heat dissipating substrate as set forth in claim 1, wherein in S6, the copper foil build-up B (8) is routed by any one of a subtractive process, an MSAP process and an SAP process.
  9. 9. The method for manufacturing a high heat dissipation substrate according to claim 1, further comprising: s7, determining the property of the circuit pattern B (80), and if the circuit pattern B (80) is an inner layer circuit, performing the following steps S8-S9, and if the circuit pattern B (80) is an outer layer circuit, performing the following step S9; S8, laminating at least one circuit layer A above the layer where the circuit pattern B (80) is located, wherein one circuit layer A located at the outermost side is an outer circuit layer, the circuit pattern B (80) is electrically communicated with the adjacent circuit layers A through a heat dissipation structure B, and/or any two adjacent circuit layers A are electrically communicated through a heat dissipation structure C, and the processing method of the heat dissipation structure B and/or the processing method of the heat dissipation structure C are the same as the processing method of the heat dissipation structure A; and S9, sequentially performing conventional outer layer anti-welding, surface treatment, molding, finished product electrical measurement and finished product inspection processes to obtain the high-heat-dissipation substrate.
  10. 10. A high heat dissipation substrate manufactured by the method for manufacturing a high heat dissipation substrate according to any one of claims 1 to 9.

Description

High-heat-dissipation substrate and processing method thereof Technical Field The invention relates to the technical field of PCB (printed circuit board), in particular to a high-heat-dissipation substrate and a processing method thereof. Background Integrated circuits are increasingly moving toward high integration, high density, high heat dissipation, and low power consumption. For the high heat dissipation function module in the organic substrate, the heat dissipation effect is mainly improved by increasing the volume of copper at present, namely, the heat dissipation effect is realized by arranging a Thermal Bar or a Thermal Square between metal layers. Regarding the manufacturing process of the heat dissipation metal strip/block, the following processing methods are mainly adopted at present: the first processing method is to use Via Post technology (advanced packaging technology combining copper pillar technology and coreless carrier board design) to manufacture large-area heat dissipation metal strips/blocks. However, the Via Post process has the core flow of 'manufacturing a seed layer, covering a dry film, electroplating a pattern, covering the dry film for the second time, electroplating a heat dissipation metal strip/block, removing the film, flashing, laminating and grinding', so that the Via Post process has the problems of incomplete film removal, high CAF failure risk and the like during implementation, and causes great hidden trouble to the quality of a substrate. The second processing mode is to manufacture the heat dissipation metal strip/block by adopting a mode of opening first and then electroplating copper plug after the insulating layer is manufactured. However, the width of the opening is limited by electroplating, so that a large opening cannot be formed, and the electroplated copper layer is recessed due to the large opening, so that the heat dissipation effect of the substrate is limited. In view of this, the present invention has been made. Disclosure of Invention In order to overcome the defects, the invention provides the high-heat-dissipation substrate and the processing method thereof, wherein the processing method is reasonable, the process flow is simple, the operation and implementation are easy, the reliability of the obtained substrate is high, the heat dissipation effect is good, and the high-density packaging requirement is well met. The technical scheme adopted for solving the technical problems is that the processing method of the high-heat-dissipation substrate comprises the following processing steps: S1, providing an operation board with a circuit pattern A on the surface layer, wherein the circuit pattern A is provided with a heat dissipation block which plays roles in conducting and heat dissipation; s2, laminating an insulating layer and a copper foil layer A on the surface layer of the operation plate, and then laser burning grooves to process caulking grooves which are opened on the surface of the copper foil layer A and take at least part of the radiating block as groove bottoms; s3, depositing a seed layer on the whole plate, and coating a plating-resistant photosensitive dry film with a notch on the seed layer through a dry film pattern transfer process, wherein the notch completely falls into the range of the caulking groove; s4, performing hole filling electroplating on the notch to obtain a copper column A; S5, hole filling electroplating is carried out on a gap between the copper column A and the inner wall of the caulking groove to form a copper column B which fills the gap, and a heat dissipation structure embryonic form which is formed by the copper column B, the copper column A and the seed layer adjacent to the copper column A and the copper column A is obtained; S6, manufacturing a circuit on the copper foil build-up layer B to obtain a circuit pattern B, wherein the circuit pattern B is electrically communicated with the circuit pattern A through the heat dissipation structure A. As a further improvement of the invention, in the step S3, the distance between the inner wall of the notch and the inner wall of the caulking groove is 60-120 μm, and meanwhile, the distance between the center of the notch and the inner wall of the caulking groove is not less than 140 μm. As a further improvement of the present invention, in the above S3, at least one of a PVD process, a CVD process and a flash plating process is used to process the seed layer having a thickness of 2.5 to 6 μm. As a further improvement of the present invention, in the above S4, the copper pillar a obtained by the hole filling plating is higher than the surface of the copper foil build-up layer a, and the difference in height between the two is controlled within ±7μm; After the plating-resistant photosensitive dry film is removed, the copper pillar A is also subjected to size correction so that the height difference between the surface of the copper pillar A and the surface of the coppe