CN-122028412-A - Semiconductor device with a semiconductor layer having a plurality of semiconductor layers

Abstract

A semiconductor device may include a substrate, a bit line extending in a direction perpendicular to the substrate, a plurality of semiconductor patterns having first ends connected to the bit line and extending in a first direction, a first electrode having first ends connected to the semiconductor patterns and extending in the first direction, and a support portion fixing second ends of the first electrode, wherein the second ends of the first electrode are located within the support portion.

Inventors

• Pu Zhengmin
• Jin Fanzong
• Ding Jiongshuo

Assignees

• 三星电子株式会社

Dates

Publication Date

20260512

Application Date

20250526

Priority Date

20241101

Claims (20)

1. 1. A semiconductor device, comprising: A substrate; A bit line extending in a direction perpendicular to the substrate; A plurality of semiconductor patterns having first ends connected to the bit lines and extending in a first direction; A first electrode having a first end connected to the semiconductor pattern and extending in the first direction, and A support portion fixing a second end portion of the first electrode, Wherein the second end of the first electrode is located within the support portion.
2. 2. The semiconductor device of claim 1, further comprising: a dielectric layer surrounding the first electrode, and And a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer, and the second electrode form a capacitor.
3. 3. The semiconductor device of claim 1, wherein a thickness of the support portion along the first direction is 50 a to 200 a.
4. 4. The semiconductor device according to claim 1, wherein a width of a region of the support portion in the direction perpendicular to the substrate overlapping the first electrode along the first direction is wider than a width of a region of the support portion in the direction perpendicular to the substrate not overlapping the first electrode along the first direction.
5. 5. The semiconductor device of claim 1, wherein: the support portion comprises silicon nitride, silicon oxide, silicon carbide, metal nitride, metal oxide and/or metal carbide, and The metal in the metal nitride, the metal oxide and/or the metal carbide is Ti, ta, hf, zr and/or Sr.
6. 6. The semiconductor device according to claim 1, wherein the support portion extends in the direction perpendicular to the substrate.
7. 7. The semiconductor device according to claim 6, wherein the support portion includes a plurality of support portions disposed to be spaced apart in a second direction intersecting the first direction.
8. 8. The semiconductor device of claim 1, wherein a recess is located in an interior of the first electrode.
9. 9. The semiconductor device according to claim 8, wherein the recess is covered by the support portion.
10. 10. The semiconductor device according to claim 1, wherein the first electrode has a columnar shape extending along the first direction.
11. 11. The semiconductor device according to claim 1, wherein the first electrode includes a vertical portion extending in the direction perpendicular to the substrate and a pair of horizontal portions extending from the vertical portion in the first direction parallel to the substrate.
12. 12. A semiconductor device, comprising: A substrate; a bit line extending in a third direction perpendicular to the substrate; a plurality of semiconductor patterns having first ends connected to the bit lines and extending in a first direction intersecting the third direction; a support portion extending in the third direction, and A plurality of first electrodes extending in the first direction, having first ends connected to respective semiconductor patterns of the plurality of semiconductor patterns and second ends located within the support portion.
13. 13. The semiconductor device of claim 12, wherein a thickness of the support portion along the first direction is 50 a to 200 a.
14. 14. The semiconductor device of claim 12, wherein: a width of a region of the support portion in the third direction overlapping the first electrode along the first direction is wider than a width of a region of the support portion in the third direction not overlapping the first electrode along the first direction.
15. 15. The semiconductor device of claim 12, wherein: the support portion comprises silicon nitride, silicon oxide, silicon carbide, metal nitride, metal oxide and/or metal carbide, and The metal in the metal nitride, the metal oxide and/or the metal carbide is Ti, ta, hf, zr and/or Sr.
16. 16. The semiconductor device according to claim 12, wherein the support portion includes a plurality of support portions provided so as to be spaced apart in a second direction intersecting both the first direction and the third direction.
17. 17. A semiconductor device, comprising: A substrate; a bit line extending in a third direction perpendicular to the substrate; a plurality of semiconductor patterns having first ends connected to the bit lines and extending in a first direction parallel to the substrate; a capacitor connected to the semiconductor pattern, and A support portion extending in the third direction, Wherein the capacitor comprises: A first electrode including a vertical portion extending in the third direction and a pair of horizontal portions extending from the vertical portion in the first direction; a dielectric layer surrounding the first electrode, and A second electrode on the dielectric layer, Wherein the ends of the pair of horizontal portions of the first electrode are located within the support portion.
18. 18. The semiconductor device of claim 17, wherein a thickness of the support portion along the first direction is 50 a to 200 a.
19. 19. The semiconductor device according to claim 17, wherein a width along the first direction of a region of the support portion overlapping the first electrode in the third direction is wider than a width along the first direction of a region of the support portion not overlapping the first electrode in the third direction.
20. 20. The semiconductor device of claim 17, wherein: the support portion comprises silicon nitride, silicon oxide, silicon carbide, metal nitride, metal oxide and/or metal carbide, and The metal in the metal nitride, the metal oxide and/or the metal carbide is Ti, ta, hf, zr and/or Sr.

Description

Semiconductor device with a semiconductor layer having a plurality of semiconductor layers Technical Field The present disclosure relates to semiconductor devices. Background There is a need for techniques to increase the integration density of semiconductor devices. In the case of a conventional two-dimensional semiconductor device, since the integration density can be mainly determined by the area occupied by the unit memory cell, the degree of integration density achieved can be affected by the technique for forming the fine pattern. However, the very high cost of equipment and techniques for forming finer and finer patterns has become prohibitive. Accordingly, a three-dimensional semiconductor memory device having memory cells arranged in three dimensions has been proposed. Disclosure of Invention The present disclosure provides a semiconductor device with improved integration and improved structural stability. A semiconductor device may include a substrate, a bit line extending in a direction perpendicular to the substrate, a plurality of semiconductor patterns having first ends connected to the bit line and extending in a first direction, a first electrode having first ends connected to the semiconductor patterns and extending in the first direction, and a support portion fixing second ends of the first electrode, wherein the second ends of the first electrode are located within the support portion. A semiconductor device may include a substrate, a bit line extending in a third direction perpendicular to the substrate, a plurality of semiconductor patterns having first ends connected to the bit line and extending in a first direction intersecting the third direction, a support portion extending in the third direction, and a plurality of first electrodes extending in the first direction and having first ends connected to respective ones of the plurality of semiconductor patterns and second ends located within the support portion. A semiconductor device may include a substrate, a bit line extending in a third direction perpendicular to the substrate, a plurality of semiconductor patterns having first ends connected to the bit line and extending in a first direction parallel to the substrate, a capacitor connected to the semiconductor patterns, and a support portion disposed to extend in the third direction, wherein the capacitor may include a first electrode including a vertical portion extending in the third direction and a pair of horizontal portions extending from the vertical portion in the first direction, a dielectric layer surrounding the first electrode, and a second electrode on the dielectric layer, wherein ends of the pair of horizontal portions of the first electrode are located within the support portion. A method for manufacturing a semiconductor device may include preparing a substrate, and bit lines and a plurality of semiconductor patterns on the substrate, wherein the bit lines extend in a direction perpendicular to the substrate, the plurality of semiconductor patterns have first ends connected to the bit lines and extend in a first direction, forming a plurality of first electrodes using a molding, the plurality of first electrodes having first ends connected to respective semiconductor patterns of the plurality of semiconductor patterns, exposing second ends of the plurality of first electrodes by etching a portion of the molding, forming a support portion such that the second ends of the plurality of first electrodes are located within the support portion, and removing the molding. Forming the plurality of first electrodes may be performed using Atomic Layer Deposition (ALD). After formation, the thickness of the support portion along the first direction may be 50 a to 200 a. The support portion may comprise silicon nitride, silicon oxide, silicon carbide, metal nitride, metal oxide and/or metal carbide, the metal in the metal nitride, metal oxide and/or metal carbide being Ti, ta, hf, zr and/or Sr. Forming the support portion may include forming a plurality of support portions disposed to be spaced apart in a second direction intersecting the first direction. The method may further include forming a plurality of dielectric layers surrounding respective ones of the plurality of first electrodes and forming a plurality of second electrodes on the plurality of dielectric layers. After formation, the support portion may extend in a direction perpendicular to the substrate. According to the embodiments, a semiconductor device having improved integration and improved structural stability may be provided. Drawings Fig. 1 schematically illustrates a cross section of a semiconductor device according to an embodiment. Fig. 2 and 3 are enlarged views of the area indicated as a in fig. 1. Fig. 4 is a section taken along line I-I' of fig. 3. Fig. 5 is a section taken along line II-II' of fig. 4. Fig. 6 is a section taken along line III-III' of fig. 3. Fig. 7 shows the same cross section as fig