CN-122028435-A - Resistive random access memory, preparation method thereof and electronic equipment

CN122028435ACN 122028435 ACN122028435 ACN 122028435ACN-122028435-A

Abstract

The present disclosure provides a resistive random access memory, a method of manufacturing the same, and an electronic device, the resistive random access memory including a stacked structure including a first electrode, a resistive layer, an oxygen exchange layer, and a second electrode; the oxygen exchange layer is positioned on the first side of the resistance change layer far away from the first electrode, the oxygen exchange layer comprises a first sub-oxygen exchange layer and a second sub-oxygen exchange layer which are stacked, the second sub-oxygen exchange layer is positioned on the first side of the first sub-oxygen exchange layer far away from the resistance change layer, the oxygen absorption activity of the second sub-oxygen exchange layer is larger than that of the first sub-oxygen exchange layer, and the second electrode is positioned on the first side of the oxygen exchange layer far away from the resistance change layer. The resistive random access memory forms a composite oxygen exchange layer structure through the first sub-oxygen exchange layer and the second sub-oxygen exchange layer, and the influence of interface stability and material chemical activity on the performance of the device is balanced.

Inventors

TANG JIANSHI
LIU KAIMENG
ZHU DIDI
GAO BIN
WU HUAQIANG
QIAN HE

Assignees

清华大学

Dates

Publication Date: 20260512
Application Date: 20260212

Claims (11)

1. A resistive random access memory comprising a stacked structure, wherein the stacked structure comprises: A first electrode; The resistive layer is positioned on the first side of the first electrode; The oxygen exchange layer is positioned on a first side of the resistive layer, which is far away from the first electrode, wherein the oxygen exchange layer comprises a first sub-oxygen exchange layer and a second sub-oxygen exchange layer which are stacked, the second sub-oxygen exchange layer is positioned on the first side of the first sub-oxygen exchange layer, which is far away from the resistive layer, and the oxygen absorption activity of the second sub-oxygen exchange layer is larger than that of the first sub-oxygen exchange layer; and a second electrode positioned on a first side of the oxygen exchange layer away from the resistive layer.
2. The resistive random access memory of claim 1, further comprising: And a passivation layer covering at least part of the side wall of the laminated structure.
3. The resistive random access memory of claim 2 wherein the passivation layer comprises a first passivation layer and a second passivation layer, The second passivation layer covers at least a portion of the sidewalls of the stacked structure, The first passivation layer is positioned on a first side of the second passivation layer away from the laminated structure; The second passivation layer is obtained by oxidizing a sidewall of the oxygen exchange layer covered with the first passivation layer.
4. A resistive random access memory according to claim 3, wherein the second passivation layer comprises at least a first sub-passivation layer and a second sub-passivation layer, The first sub-passivation layer covers sidewalls of the first sub-oxygen exchange layer, The second sub-passivation layer covers the sidewalls of the second sub-oxygen exchange layer, The distance from the first sub-oxygen exchange layer to the first passivation layer is less than the distance from the second sub-oxygen exchange layer to the first passivation layer.
5. The resistive random access memory of any one of claims 1-4, wherein the material of the first sub-oxygen exchange layer comprises any one of a metal, a metal oxide, a partial metallic compound, and a non-metal oxide; the material of the second sub-oxygen exchange layer includes an active metal.
6. An electronic device comprising a resistive switching memory according to any one of claims 1-5.
7. A method for manufacturing a resistive random access memory, comprising forming a stacked structure, wherein the forming the stacked structure comprises: Forming a first electrode; forming a resistive layer on a first side of the first electrode; Forming an oxygen exchange layer on a first side of the resistive layer away from the first electrode, wherein the oxygen exchange layer comprises a first sub-oxygen exchange layer and a second sub-oxygen exchange layer, the second sub-oxygen exchange layer is positioned on the first side of the first sub-oxygen exchange layer away from the resistive layer, and the oxygen absorption activity of the second sub-oxygen exchange layer is greater than that of the first sub-oxygen exchange layer; A second electrode is formed on a first side of the oxygen exchange layer remote from the resistive switching layer.
8. The method of claim 7, further comprising forming a passivation layer after forming the second electrode, wherein the passivation layer covers at least a portion of sidewalls of the stacked structure.
9. The method of manufacturing of claim 8, wherein the forming a passivation layer comprises: forming a first passivation layer on sidewalls of the stacked structure; Performing plasma enhancement treatment on the laminated structure with the first passivation layer formed on the side wall, and oxidizing the side wall of the oxygen exchange layer to form a second passivation layer; Wherein the first passivation layer is located on a first side of the second passivation layer remote from the stacked structure.
10. The method of manufacturing as claimed in claim 9, wherein the second passivation layer includes at least a first sub-passivation layer and a second sub-passivation layer, The first sub-passivation layer covers sidewalls of the first sub-oxygen exchange layer, The second sub-passivation layer covers the sidewalls of the second sub-oxygen exchange layer, The distance from the first sub-oxygen exchange layer to the first passivation layer is less than the distance from the second sub-oxygen exchange layer to the first passivation layer.
11. The method of claim 9, further comprising annealing the stacked structure after forming the second passivation layer.

Description

Resistive random access memory, preparation method thereof and electronic equipment Technical Field One or more embodiments of the present disclosure relate to a resistive random access memory, a method of manufacturing the same, and an electronic device. Background The resistive random access memory (RESISTIVE RANDOM ACCESS MEMORY, RRAM) is a nonvolatile memory that records and stores data information based on a change in resistance value, has characteristics of high speed and low power consumption, and can realize a memory function in a small size. The resistive random access memory has good application prospect in the fields of artificial intelligence, neural networks, memories and the like. Disclosure of Invention At least one embodiment of the disclosure provides a resistive random access memory, which comprises a laminated structure, wherein the laminated structure comprises a first electrode, a resistive random access layer positioned on a first side of the first electrode, an oxygen exchange layer positioned on a first side of the resistive random access layer away from the first electrode, wherein the oxygen exchange layer comprises a first sub-oxygen exchange layer and a second sub-oxygen exchange layer which are laminated, the second sub-oxygen exchange layer is positioned on the first side of the first sub-oxygen exchange layer away from the resistive random access layer, the oxygen absorption activity of the second sub-oxygen exchange layer is greater than that of the first sub-oxygen exchange layer, and the second electrode is positioned on the first side of the oxygen exchange layer away from the resistive random access layer. For example, in accordance with at least one embodiment of the present disclosure, the resistive random access memory further includes a passivation layer covering at least a portion of the sidewalls of the stacked structure. For example, in accordance with at least one embodiment of the present disclosure, the passivation layer includes a first passivation layer and a second passivation layer, the second passivation layer covers at least a portion of a sidewall of the stacked structure, the first passivation layer is located on a first side of the second passivation layer remote from the stacked structure, and the second passivation layer is obtained by oxidizing the sidewall of the oxygen exchange layer covered with the first passivation layer. For example, according to at least one embodiment of the present disclosure, the second passivation layer includes at least a first sub-passivation layer covering a sidewall of the first sub-oxygen exchanging layer and a second sub-passivation layer covering a sidewall of the second sub-oxygen exchanging layer, a distance from the first sub-oxygen exchanging layer to the first passivation layer being smaller than a distance from the second sub-oxygen exchanging layer to the first passivation layer. For example, in accordance with at least one embodiment of the present disclosure, the material of the first sub-oxygen exchange layer includes any one of a metal, a metal oxide, a partial metallic compound, and a non-metal oxide, and the material of the second sub-oxygen exchange layer includes an active metal. At least one embodiment of the present disclosure also provides an electronic device, including the resistive random access memory provided by any one embodiment of the present disclosure. The preparation method for preparing the resistive random access memory comprises the steps of forming a laminated structure, forming a resistive random access layer on the first side of the first electrode, forming an oxygen exchange layer on the first side of the resistive random access layer far away from the first electrode, wherein the oxygen exchange layer comprises a first sub-oxygen exchange layer and a second sub-oxygen exchange layer, the second sub-oxygen exchange layer is located on the first side of the first sub-oxygen exchange layer far away from the resistive random access layer, the oxygen absorption activity of the second sub-oxygen exchange layer is larger than that of the first sub-oxygen exchange layer, and forming a second electrode on the first side of the oxygen exchange layer far away from the resistive random access layer. For example, in accordance with at least one embodiment of the present disclosure, a passivation layer is formed after the second electrode is formed, wherein the passivation layer covers at least a portion of the sidewalls of the stacked structure. For example, in accordance with at least one embodiment of the present disclosure, forming a passivation layer includes forming a first passivation layer on a sidewall of a stacked structure, performing a plasma enhanced treatment on the stacked structure with the first passivation layer formed on the sidewall, and oxidizing the sidewall of the oxygen exchange layer to form a second passivation layer, wherein the first passivation layer is located on